View source for 18094597. FIELD-EFFECT TRANSISTOR STRUCTURE INCLUDING PASSIVE DEVICE AND BACK SIDE POWER DISTRIBUTION NETWORK (BSPDN) simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=FIELD-EFFECT TRANSISTOR STRUCTURE INCLUDING PASSIVE DEVICE AND BACK SIDE POWER DISTRIBUTION NETWORK (BSPDN)=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Jaehong Lee of Latham NY (US)|Jaehong Lee of Latham NY (US)]][[Category:Jaehong Lee of Latham NY (US)]]

[[:Category:Seungchan Yun of Waterford NY (US)|Seungchan Yun of Waterford NY (US)]][[Category:Seungchan Yun of Waterford NY (US)]]

[[:Category:Sooyoung Park of Clifton Park NY (US)|Sooyoung Park of Clifton Park NY (US)]][[Category:Sooyoung Park of Clifton Park NY (US)]]

[[:Category:Kang-ill Seo of Springfield VA (US)|Kang-ill Seo of Springfield VA (US)]][[Category:Kang-ill Seo of Springfield VA (US)]]

==FIELD-EFFECT TRANSISTOR STRUCTURE INCLUDING PASSIVE DEVICE AND BACK SIDE POWER DISTRIBUTION NETWORK (BSPDN) - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18094597 titled 'FIELD-EFFECT TRANSISTOR STRUCTURE INCLUDING PASSIVE DEVICE AND BACK SIDE POWER DISTRIBUTION NETWORK (BSPDN)

==Simplified Explanation==

The patent application describes a field-effect transistor structure that includes various doped regions on a substrate, forming a sequentially connected passive device. 

* The structure includes a substrate with at least one doped region, a doped region on one side, and another doped region on the other side of the first doped region.
* There is a channel structure on one side of the substrate, including a doped region on the second doped region.
* On the other side of the channel structure, there is another channel structure including a doped region on the third doped region in the substrate.
* The doped regions (4, 2, 1, 3, and 5) are connected in sequence to form the passive device.

Potential applications of this technology:

* Integrated circuits
* Electronics manufacturing
* Semiconductor devices

Problems solved by this technology:

* Improved performance and functionality of field-effect transistors
* Enhanced integration of passive devices in semiconductor structures

Benefits of this technology:

* Increased efficiency and reliability of electronic devices
* Simplified manufacturing processes
* Enhanced functionality and performance of integrated circuits.


==Original Abstract Submitted==

Provided is field-effect transistor structure including: a substrate including therein at least one 1doped region, a 2doped region on one side of the 1doped region, and a 3doped region on another side of the 1doped region; a 1channel structure including therein a 4doped region on the 2doped region in the substrate; and a 2channel structure, at a side of the 1channel structure, including therein a 5doped region on the 3doped region in the substrate, wherein the 4, 2, 1, 3and 5doped regions form a sequentially connected passive device.



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