View source for 18093932. CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERTICAL FIELD EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation)

=CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERTICAL FIELD EFFECT TRANSISTOR=


==Organization Name==

[[:Category:International Business Machines Corporation|International Business Machines Corporation]]


[[Category:International Business Machines Corporation]]

==Inventor(s)==

[[:Category:Heng Wu of Santa Clara CA (US)|Heng Wu of Santa Clara CA (US)]][[Category:Heng Wu of Santa Clara CA (US)]]

[[:Category:Ruilong Xie of Niskayuna NY (US)|Ruilong Xie of Niskayuna NY (US)]][[Category:Ruilong Xie of Niskayuna NY (US)]]

[[:Category:Su Chen Fan of Cohoes NY (US)|Su Chen Fan of Cohoes NY (US)]][[Category:Su Chen Fan of Cohoes NY (US)]]

[[:Category:Jay William Strane of Warwick NY (US)|Jay William Strane of Warwick NY (US)]][[Category:Jay William Strane of Warwick NY (US)]]

[[:Category:Hemanth Jagannathan of Niskayuna NY (US)|Hemanth Jagannathan of Niskayuna NY (US)]][[Category:Hemanth Jagannathan of Niskayuna NY (US)]]

==CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERTICAL FIELD EFFECT TRANSISTOR - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18093932 titled 'CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERTICAL FIELD EFFECT TRANSISTOR

==Simplified Explanation==

The abstract describes a method for fabricating highly doped top source/drains in field effect transistors (FETs) with minimal lithography and etching processes. This method allows for the formation of FETs with increased functionality and reduced scaling.

* The method involves forming a p-type FET region and an n-type FET region in a semiconductor substrate.
* The process flow used in this method enables the fabrication of highly doped top source/drains.
* The method minimizes the need for lithography and etching processes, reducing the complexity and cost of fabrication.
* The resulting FETs have increased functionality, meaning they can perform more complex tasks.
* The method also allows for reduced scaling, which means the FETs can be made smaller while still maintaining their performance.

== Potential Applications ==
This technology can have various applications in the field of semiconductor devices and integrated circuits. Some potential applications include:

* Microprocessors and CPUs: The highly doped top source/drains can enhance the performance and functionality of these key components in computing devices.
* Memory devices: The increased functionality of the FETs can improve the speed and capacity of memory devices such as RAM and flash memory.
* Communication devices: The reduced scaling capability can be beneficial for the fabrication of smaller and more efficient transistors used in wireless communication devices.

== Problems Solved ==
The method described in the patent application solves several problems in the fabrication of FETs:

* Complex lithography and etching processes: By minimizing the need for these processes, the method simplifies the fabrication process and reduces manufacturing costs.
* Limited functionality: The highly doped top source/drains enable FETs to perform more complex tasks, enhancing their functionality.
* Scaling limitations: The method allows for reduced scaling, meaning FETs can be made smaller without sacrificing performance.

== Benefits ==
The use of this method offers several benefits:

* Cost reduction: By minimizing the need for complex lithography and etching processes, the fabrication process becomes more cost-effective.
* Improved functionality: The highly doped top source/drains enable FETs to perform more complex tasks, expanding their range of applications.
* Size reduction: The ability to scale down FETs while maintaining performance allows for the creation of smaller and more efficient semiconductor devices.


==Original Abstract Submitted==

A method includes forming a p-type field effect transistor region and an n-type field effect transistor region into a semiconductor substrate. The method implements a process flow to fabricate highly doped top source/drains with minimal lithography and etching processes. The method permits the formation of VFETs with increased functionality and reduced scaling.



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