View source for 18089691. SUBSTRATE PROCESSING APPARATUS, SIGNAL SOURCE DEVICE, METHOD OF PROCESSING MATERIAL LAYER, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=SUBSTRATE PROCESSING APPARATUS, SIGNAL SOURCE DEVICE, METHOD OF PROCESSING MATERIAL LAYER, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Sung-gil Kang of Hwaseong-si (KR)|Sung-gil Kang of Hwaseong-si (KR)]][[Category:Sung-gil Kang of Hwaseong-si (KR)]]

[[:Category:Min-seop Park of Hwaseong-si (KR)|Min-seop Park of Hwaseong-si (KR)]][[Category:Min-seop Park of Hwaseong-si (KR)]]

[[:Category:Gon-jun Kim of Suwon-si (KR)|Gon-jun Kim of Suwon-si (KR)]][[Category:Gon-jun Kim of Suwon-si (KR)]]

[[:Category:Jae-jik Baek of Seongnam-si (KR)|Jae-jik Baek of Seongnam-si (KR)]][[Category:Jae-jik Baek of Seongnam-si (KR)]]

[[:Category:Jae-jin Shin of Seoul (KR)|Jae-jin Shin of Seoul (KR)]][[Category:Jae-jin Shin of Seoul (KR)]]

[[:Category:In-hye Jeong of Changnyeong-gun (KR)|In-hye Jeong of Changnyeong-gun (KR)]][[Category:In-hye Jeong of Changnyeong-gun (KR)]]

==SUBSTRATE PROCESSING APPARATUS, SIGNAL SOURCE DEVICE, METHOD OF PROCESSING MATERIAL LAYER, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18089691 titled 'SUBSTRATE PROCESSING APPARATUS, SIGNAL SOURCE DEVICE, METHOD OF PROCESSING MATERIAL LAYER, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE

==Simplified Explanation==

The patent application describes a substrate processing apparatus that is used to obtain a smooth etched surface for a crystalline material layer without the risk of device damage by RDC (residual damage caused by plasma etching).

* The substrate processing apparatus includes a processing chamber, a susceptor, and two plasma generators.
* The susceptor is located in the processing chamber and is designed to support a substrate.
* The first plasma generator is positioned on one side of the processing chamber.
* The second plasma generator is positioned on the other side of the processing chamber and is configured to generate plasma by simultaneously supplying a sinusoidal wave signal and a non-sinusoidal wave signal to the susceptor.

Potential applications of this technology:

* Semiconductor manufacturing: This substrate processing apparatus can be used in the production of semiconductor devices, where a smooth etched surface is crucial for device performance.
* Optoelectronics: The technology can also be applied in the manufacturing of optoelectronic devices, such as LEDs and solar cells, to achieve high-quality surface finishes.

Problems solved by this technology:

* Smooth etched surface: The apparatus and method described in the patent application address the challenge of obtaining a smooth etched surface for crystalline material layers, which is important for the functionality and performance of various electronic and optoelectronic devices.
* Device damage prevention: By using a combination of sinusoidal and non-sinusoidal wave signals, the risk of device damage caused by residual damage from plasma etching is minimized.

Benefits of this technology:

* Improved device performance: The smooth etched surface achieved with this technology can enhance the performance of semiconductor and optoelectronic devices.
* Reduced device failure: By minimizing the risk of device damage during the etching process, the technology helps to reduce the likelihood of device failure and increase overall device reliability.


==Original Abstract Submitted==

A substrate processing apparatus includes a processing chamber; a susceptor provided in the processing chamber, wherein the susceptor is configured to support a substrate; a first plasma generator disposed on one side of the processing chamber; and a second plasma generator disposed on another side of the processing chamber, wherein the second plasma generator is configured to generate plasma by simultaneously supplying a sinusoidal wave signal and a non-sinusoidal wave signal to the susceptor. By using a substrate processing apparatus, a signal source device, and a method of processing a material layer according to the inventive concept, a smooth etched surface may be obtained for a crystalline material layer without a risk of device damage by RDC.



[[Category:H01J37/32]]
[[Category:H01L21/67]]
[[Category:H01L21/3213]]
[[Category:H01L21/311]]
[[Category:H01L21/02]]