View source for 18060884. SEMICONDUCTOR MEMORY DEVICE INCLUDING CHALCOGENIDE simplified abstract (SK hynix Inc.)

=SEMICONDUCTOR MEMORY DEVICE INCLUDING CHALCOGENIDE=


==Organization Name==

[[:Category:SK hynix Inc.|SK hynix Inc.]]


[[Category:SK hynix Inc.]]

==Inventor(s)==

[[:Category:Jong Ho Lee of Icheon (KR)|Jong Ho Lee of Icheon (KR)]][[Category:Jong Ho Lee of Icheon (KR)]]

[[:Category:Jun Ku Ahn of Icheon (KR)|Jun Ku Ahn of Icheon (KR)]][[Category:Jun Ku Ahn of Icheon (KR)]]

[[:Category:Gwang Sun Jung of Icheon (KR)|Gwang Sun Jung of Icheon (KR)]][[Category:Gwang Sun Jung of Icheon (KR)]]

[[:Category:Uk Hwang of Icheon (KR)|Uk Hwang of Icheon (KR)]][[Category:Uk Hwang of Icheon (KR)]]

==SEMICONDUCTOR MEMORY DEVICE INCLUDING CHALCOGENIDE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18060884 titled 'SEMICONDUCTOR MEMORY DEVICE INCLUDING CHALCOGENIDE

==Simplified Explanation==

'''Abstract:'''
A semiconductor memory device is described that includes a memory cell with a chalcogenide layer composed of three or more components. The memory cell is positioned between a first electrode and a second electrode. The device also includes a peripheral circuit that provides the memory cell with a program pulse, which induces a compositional gradient in the chalcogenide layer.

'''Patent/Innovation Explanation:'''
* The semiconductor memory device includes a memory cell with a chalcogenide layer composed of three or more components.
* The memory cell is positioned between a first electrode and a second electrode.
* A peripheral circuit is included in the device to provide the memory cell with a program pulse.
* The program pulse induces a compositional gradient in the chalcogenide layer.

'''Potential Applications:'''
* This technology can be used in various memory devices, such as non-volatile memory (NVM) devices.
* It can be applied in computer systems, smartphones, tablets, and other electronic devices that require memory storage.

'''Problems Solved:'''
* The technology addresses the need for improved memory devices with enhanced performance and reliability.
* It solves the problem of achieving a compositional gradient in the chalcogenide layer of a memory cell.

'''Benefits of this Technology:'''
* The use of a chalcogenide layer with three or more components improves the performance and reliability of the memory device.
* The induced compositional gradient in the chalcogenide layer enhances the functionality and efficiency of the memory cell.
* The technology enables faster and more efficient data storage and retrieval in electronic devices.


==Original Abstract Submitted==

A semiconductor memory device includes a memory cell interposed between a first electrode and a second electrode, and configured with a chalcogenide layer that includes three or more components, and a peripheral circuit for providing the memory cell with a program pulse inducing a compositional gradient in the chalcogenide layer.



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