View source for 18054348. TRENCH ETCHING PROCESS FOR PHOTORESIST LINE ROUGHNESS IMPROVEMENT simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

=TRENCH ETCHING PROCESS FOR PHOTORESIST LINE ROUGHNESS IMPROVEMENT=


==Organization Name==

[[:Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.|TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]


[[Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]

==Inventor(s)==

[[:Category:Sheng-Lin Hsieh of Hsinchu (TW)|Sheng-Lin Hsieh of Hsinchu (TW)]][[Category:Sheng-Lin Hsieh of Hsinchu (TW)]]

[[:Category:I-Chih Chen of Hsinchu (TW)|I-Chih Chen of Hsinchu (TW)]][[Category:I-Chih Chen of Hsinchu (TW)]]

[[:Category:Ching-Pei Hsieh of Hsinchu (TW)|Ching-Pei Hsieh of Hsinchu (TW)]][[Category:Ching-Pei Hsieh of Hsinchu (TW)]]

[[:Category:Kuan Jung Chen of Hsinchu (TW)|Kuan Jung Chen of Hsinchu (TW)]][[Category:Kuan Jung Chen of Hsinchu (TW)]]

==TRENCH ETCHING PROCESS FOR PHOTORESIST LINE ROUGHNESS IMPROVEMENT - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18054348 titled 'TRENCH ETCHING PROCESS FOR PHOTORESIST LINE ROUGHNESS IMPROVEMENT

==Simplified Explanation==

The patent application describes a method of forming a semiconductor device structure by using a resist structure with an anti-reflective coating (ARC) layer and a photoresist layer. The method involves patterning the photoresist layer to create a trench and then performing a hydrogen plasma treatment to smooth the sidewalls of the trench. The treatment is done at a temperature between 200°C and 600°C. Finally, the ARC layer is patterned using the patterned photoresist layer as an etch mask.

* The method involves forming a resist structure with an ARC layer and a photoresist layer.
* The photoresist layer is patterned to create a trench.
* A hydrogen plasma treatment is performed to smooth the sidewalls of the trench.
* The hydrogen plasma treatment is done at a temperature between 200°C and 600°C.
* The ARC layer is patterned using the patterned photoresist layer as an etch mask.

==Potential Applications==
* Semiconductor device manufacturing
* Integrated circuit fabrication

==Problems Solved==
* Sidewall roughness in trenches during semiconductor device fabrication
* Improving the quality and precision of patterned structures

==Benefits==
* Smoother sidewalls in trenches
* Enhanced precision in patterning
* Improved overall quality of semiconductor device structures


==Original Abstract Submitted==

A method of forming a semiconductor device structure includes forming a resist structure over a substrate, the resist structure includes an anti-reflective coating (ARC) layer and a photoresist layer over the ARC layer. The method further includes patterning the photoresist layer to form a trench therein. The method further includes performing a hydrogen plasma treatment to the patterned photoresist layer, wherein the hydrogen plasma treatment is configured to smooth sidewalls of the trench, and the hydrogen plasma treatment is performed at a temperature ranging from about 200° C. to about 600° C. The method further includes patterning the ARC layer using the patterned photoresist layer as a etch mask.



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