View source for 17993473. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SK hynix Inc.)

=SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME=


==Organization Name==

[[:Category:SK hynix Inc.|SK hynix Inc.]]


[[Category:SK hynix Inc.]]

==Inventor(s)==

[[:Category:Dong Soo Kim of Gyeonggi-do (KR)|Dong Soo Kim of Gyeonggi-do (KR)]][[Category:Dong Soo Kim of Gyeonggi-do (KR)]]

[[:Category:Mun Gi Sim of Gyeonggi-do (KR)|Mun Gi Sim of Gyeonggi-do (KR)]][[Category:Mun Gi Sim of Gyeonggi-do (KR)]]

==SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17993473 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

==Simplified Explanation==

The present invention relates to a semiconductor device and a method of fabricating the same. The device includes a substrate with a trench, a gate dielectric layer formed along the sidewall and bottom surface of the trench, a lower gate electrode made of a first metal nitride with a first grain size, an upper gate electrode partially filling the trench and made of a second metal nitride with a second grain size larger than the first grain size, and a capping layer filling the remaining portion of the trench.

* The semiconductor device includes a trench structure with improved electrical characteristics.
* The gate dielectric layer enhances the performance of the device.
* The lower gate electrode made of a first metal nitride provides stability and conductivity.
* The upper gate electrode made of a second metal nitride with a larger grain size improves the device's performance.
* The capping layer fills the remaining trench space, providing protection and stability to the device.

==Potential Applications==
This technology can be applied in various semiconductor devices, including but not limited to:
* Integrated circuits (ICs)
* Transistors
* Memory devices
* Microprocessors

==Problems Solved==
The semiconductor device and fabrication method address the following issues:
* Improving electrical characteristics of the device
* Enhancing stability and conductivity of the gate electrodes
* Optimizing performance by utilizing different metal nitrides with varying grain sizes
* Providing protection and stability to the device through the capping layer

==Benefits==
The use of this technology offers several advantages:
* Improved electrical characteristics of the semiconductor device
* Enhanced stability and conductivity of the gate electrodes
* Better performance due to the utilization of different metal nitrides with varying grain sizes
* Increased protection and stability provided by the capping layer


==Original Abstract Submitted==

Embodiments of the present invention provides a semiconductor device with improved electrical characteristics and a method of fabricating the same. A semiconductor device according to an embodiment of the present invention comprises: a substrate including a trench; a gate dielectric layer formed along a sidewall surface and a bottom surface of the trench; a lower gate electrode filling a lower portion of the trench over the gate dielectric layer and formed of a first metal nitride, the first metal nitride having a first grain size; an upper gate electrode partially filling the trench over the lower gate electrode, including a low work function control element, and formed of a second metal nitride, the second metal nitride having a second grain size bigger than the first grain size; and a capping layer gap-filling the remainder of the trench over the upper gate electrode.



[[Category:H01L27/108]]