View source for 17963031. SEMICONDUCTOR STRUCTURE WITH CONDUCTIVE SPACER IN SHALLOW TRENCH ISOLATION REGION simplified abstract (International Business Machines Corporation)

=SEMICONDUCTOR STRUCTURE WITH CONDUCTIVE SPACER IN SHALLOW TRENCH ISOLATION REGION=


==Organization Name==

[[:Category:International Business Machines Corporation|International Business Machines Corporation]]


[[Category:International Business Machines Corporation]]

==Inventor(s)==

[[:Category:Koichi Motoyama of Clifton Park NY (US)|Koichi Motoyama of Clifton Park NY (US)]][[Category:Koichi Motoyama of Clifton Park NY (US)]]

[[:Category:Ruilong Xie of Niskayuna NY (US)|Ruilong Xie of Niskayuna NY (US)]][[Category:Ruilong Xie of Niskayuna NY (US)]]

[[:Category:Kisik Choi of Watervliet NY (US)|Kisik Choi of Watervliet NY (US)]][[Category:Kisik Choi of Watervliet NY (US)]]

[[:Category:Chih-Chao Yang of Glenmont NY (US)|Chih-Chao Yang of Glenmont NY (US)]][[Category:Chih-Chao Yang of Glenmont NY (US)]]

==SEMICONDUCTOR STRUCTURE WITH CONDUCTIVE SPACER IN SHALLOW TRENCH ISOLATION REGION - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17963031 titled 'SEMICONDUCTOR STRUCTURE WITH CONDUCTIVE SPACER IN SHALLOW TRENCH ISOLATION REGION

==Simplified Explanation==

The semiconductor structure described in the patent application includes a shallow trench isolation region within a semiconductor substrate, along with a conductive spacer within the shallow trench isolation region.

* The semiconductor structure features a shallow trench isolation region that helps isolate different components on the semiconductor substrate.
* A conductive spacer is placed within the shallow trench isolation region to provide additional functionality or connectivity within the semiconductor structure.

== Potential Applications ==
The technology described in this patent application could be applied in:
* Integrated circuits
* Semiconductor devices

== Problems Solved ==
This technology helps address the following issues:
* Isolation of components on a semiconductor substrate
* Enhancing connectivity within semiconductor structures

== Benefits ==
The benefits of this technology include:
* Improved performance of semiconductor devices
* Enhanced functionality of integrated circuits

== Potential Commercial Applications ==
This technology could be utilized in various commercial applications such as:
* Consumer electronics
* Telecommunications industry

== Possible Prior Art ==
One possible prior art for this technology could be the use of shallow trench isolation regions in semiconductor structures for isolation purposes.

== Unanswered Questions ==
=== How does the conductive spacer enhance the functionality of the semiconductor structure? ===
The conductive spacer could potentially provide additional connectivity between components within the semiconductor structure, but the specific details of this enhancement are not provided in the abstract.

=== What specific semiconductor devices could benefit most from this technology? ===
While the abstract mentions semiconductor structures in general, it would be helpful to know which specific types of semiconductor devices could see the most significant improvements from implementing this technology.


==Original Abstract Submitted==

A semiconductor structure includes a shallow trench isolation region disposed within a semiconductor substrate, and a conductive spacer disposed within the shallow trench isolation region.



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