View source for 17958290. WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS simplified abstract (Intel Corporation)

=WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS=


==Organization Name==

[[:Category:Intel Corporation|Intel Corporation]]


[[Category:Intel Corporation]]

==Inventor(s)==

[[:Category:Leonard P. Guler of Hillsboro OR (US)|Leonard P. Guler of Hillsboro OR (US)]][[Category:Leonard P. Guler of Hillsboro OR (US)]]

[[:Category:Sukru Yemenicioglu of Portland OR (US)|Sukru Yemenicioglu of Portland OR (US)]][[Category:Sukru Yemenicioglu of Portland OR (US)]]

[[:Category:Shengsi Liu of Portland OR (US)|Shengsi Liu of Portland OR (US)]][[Category:Shengsi Liu of Portland OR (US)]]

[[:Category:Shao Ming Koh of Tigard OR (US)|Shao Ming Koh of Tigard OR (US)]][[Category:Shao Ming Koh of Tigard OR (US)]]

[[:Category:Tahir Ghani of Portland OR (US)|Tahir Ghani of Portland OR (US)]][[Category:Tahir Ghani of Portland OR (US)]]

==WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17958290 titled 'WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS

==Simplified Explanation==

Embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for creating a wall within a forkFET transistor structure, where the wall is adjacent to a first stack of nanoribbons on a first side of the wall and a second stack of nanoribbons on a second side of the wall opposite the first side of the wall. In embodiments, the wall extends beyond the top of the first stack of nanoribbons and electrically isolates a first gate metal coupled with the first stack of nanoribbons and a second gate metal coupled with the second stack of nanoribbons from each other. Other embodiments may be described and/or claimed.

* Wall created within a forkFET transistor structure
* Adjacent to first and second stacks of nanoribbons
* Extends beyond the top of the first stack to isolate gate metals
* Enables separate control of nanoribbon stacks

== Potential Applications ==
This technology could be applied in:
* Advanced semiconductor devices
* Nanoelectronics
* High-performance computing

== Problems Solved ==
* Improved control and isolation of nanoribbon stacks
* Enhanced performance of transistor structures
* Increased efficiency in electronic devices

== Benefits ==
* Higher precision in transistor operation
* Enhanced functionality in nanoelectronics
* Potential for faster computing speeds

== Potential Commercial Applications ==
* Semiconductor industry
* Electronics manufacturing
* Research and development in nanotechnology

== Possible Prior Art ==
One possible prior art could be the use of nanoribbons in transistor structures for improved performance and efficiency. However, the specific implementation of a wall within a forkFET transistor structure to isolate gate metals may be a novel aspect of this technology.

== Unanswered Questions ==

=== How does this technology compare to traditional transistor structures? ===
The article does not provide a direct comparison between this technology and traditional transistor structures in terms of performance, efficiency, and scalability.

=== What are the potential challenges in scaling up this technology for mass production? ===
The article does not address the potential challenges or limitations in scaling up this technology for commercial production, such as manufacturing costs, scalability issues, or integration with existing semiconductor processes.


==Original Abstract Submitted==

Embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for techniques for creating a wall within a forkFET transistor structure, where the wall is adjacent to a first stack of nanoribbons on a first side of the wall and a second stack of nanoribbons on a second side of the wall opposite the first side of the wall. In embodiments, the wall extends beyond the top of the first stack of nanoribbons and electrically isolates a first gate metal coupled with the first stack of nanoribbons and a second gate metal coupled with the second stack of nanoribbons from each other. Other embodiments may be described and/or claimed.



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[[Category:H01L29/06]]
[[Category:H01L29/423]]
[[Category:H01L29/78]]