View source for 17956786. Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Devices, and Storage Devices simplified abstract (Western Digital Technologies, Inc.)

=Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Devices, and Storage Devices=


==Organization Name==

[[:Category:Western Digital Technologies, Inc.|Western Digital Technologies, Inc.]]


[[Category:Western Digital Technologies, Inc.]]

==Inventor(s)==

[[:Category:Susumu Okamura of San Jose CA (US)|Susumu Okamura of San Jose CA (US)]][[Category:Susumu Okamura of San Jose CA (US)]]

[[:Category:Quang Le of San Jose CA (US)|Quang Le of San Jose CA (US)]][[Category:Quang Le of San Jose CA (US)]]

[[:Category:Brian R. York of San Jose CA (US)|Brian R. York of San Jose CA (US)]][[Category:Brian R. York of San Jose CA (US)]]

[[:Category:Cherngye Hwang of San Jose CA (US)|Cherngye Hwang of San Jose CA (US)]][[Category:Cherngye Hwang of San Jose CA (US)]]

[[:Category:Randy G. Simmons of San Jose CA (US)|Randy G. Simmons of San Jose CA (US)]][[Category:Randy G. Simmons of San Jose CA (US)]]

[[:Category:Kuok San Ho of Emerald Hills CA (US)|Kuok San Ho of Emerald Hills CA (US)]][[Category:Kuok San Ho of Emerald Hills CA (US)]]

[[:Category:Hisashi Takano of San Jose CA (US)|Hisashi Takano of San Jose CA (US)]][[Category:Hisashi Takano of San Jose CA (US)]]

==Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Devices, and Storage Devices - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17956786 titled 'Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Devices, and Storage Devices

==Simplified Explanation==

The present disclosure relates to a cobalt-boron (CoB) layer for magnetic recording devices, memory devices, and storage devices, particularly as part of a spin-orbit torque (SOT) device.

* The CoB layer is used in SOT devices, which can be part of sensors, writers, memory devices (such as MRAM), and storage devices (such as HDDs or tape drives).
* The SOT device includes a seed layer, a cap layer, a spin-orbit torque (SOT) layer, a nano layer (NL), and the ferromagnetic CoB layer between the seed layer and the cap layer.

== Potential Applications ==
The technology can be applied in:
* Magnetic recording devices
* Memory devices
* Storage devices

== Problems Solved ==
* Enhanced performance of SOT devices
* Improved data storage capabilities
* Increased efficiency in magnetic recording

== Benefits ==
* Higher data storage density
* Faster data transfer rates
* Improved reliability and durability

== Potential Commercial Applications ==
Optimized for:
* Data centers
* Consumer electronics
* Information technology industry

== Possible Prior Art ==
One possible prior art could be the use of different materials in SOT devices for similar purposes.

=== Unanswered Questions ===

=== How does the CoB layer compare to other materials in terms of performance in SOT devices? ===
The article does not provide a direct comparison with other materials used in SOT devices, leaving room for further research and analysis.

=== Are there any limitations or drawbacks associated with the use of the CoB layer in SOT devices? ===
The article does not mention any potential limitations or drawbacks of using the CoB layer, which could be important factors to consider in practical applications.


==Original Abstract Submitted==

Embodiments of the present disclosure relate to a cobalt-boron (CoB) layer for magnetic recording devices, memory devices, and storage devices. In one or more embodiments, the CoB layer is part of a spin-orbit torque (SOT) device. In one or more embodiments, the SOT device is part of an SOT based sensor, an SOT based writer, a memory device (such as a magnetoresistive random-access memory (MRAM) device), and/or a storage device (such as a hard disk drive (HDD) or a tape drive). In one embodiment, an SOT device includes a seed layer, and a cap layer spaced from the seed layer. The SOT device includes a spin-orbit torque (SOT) layer, and a nano layer (NL) between the seed layer and the cap layer. The SOT device includes a cobalt-boron (CoB) layer between the seed layer and the cap layer, and the CoB layer is ferromagnetic.



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