View source for 17942977. READ LEVEL COMPENSATION FOR PARTIALLY PROGRAMMED BLOCKS OF MEMORY DEVICES simplified abstract (Micron Technology, Inc.)

=READ LEVEL COMPENSATION FOR PARTIALLY PROGRAMMED BLOCKS OF MEMORY DEVICES=


==Organization Name==

[[:Category:Micron Technology, Inc.|Micron Technology, Inc.]]


[[Category:Micron Technology, Inc.]]

==Inventor(s)==

[[:Category:Nagendra Prasad Ganesh Rao of Folsom CA (US)|Nagendra Prasad Ganesh Rao of Folsom CA (US)]][[Category:Nagendra Prasad Ganesh Rao of Folsom CA (US)]]

[[:Category:Paing Z. Htet of Union City CA (US)|Paing Z. Htet of Union City CA (US)]][[Category:Paing Z. Htet of Union City CA (US)]]

[[:Category:Sead Zildzic, Jr. of Folsom CA (US)|Sead Zildzic, Jr. of Folsom CA (US)]][[Category:Sead Zildzic, Jr. of Folsom CA (US)]]

[[:Category:Thomas Fiala of Folsom CA (US)|Thomas Fiala of Folsom CA (US)]][[Category:Thomas Fiala of Folsom CA (US)]]

[[:Category:Jian Huang of Union City CA (US)|Jian Huang of Union City CA (US)]][[Category:Jian Huang of Union City CA (US)]]

[[:Category:Zhenming Zhou of San Jose CA (US)|Zhenming Zhou of San Jose CA (US)]][[Category:Zhenming Zhou of San Jose CA (US)]]

==READ LEVEL COMPENSATION FOR PARTIALLY PROGRAMMED BLOCKS OF MEMORY DEVICES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17942977 titled 'READ LEVEL COMPENSATION FOR PARTIALLY PROGRAMMED BLOCKS OF MEMORY DEVICES

==Simplified Explanation==

The patent application describes a system that includes a memory device with blocks made up of wordlines connected to memory cells, and a processing device that performs operations based on the state of these blocks.

* The system can determine a metric reflecting the number of programmed wordlines in a specified block.
* If the block is partially programmed, the system identifies a read voltage offset based on the metric.
* Using the read voltage offset, the system performs a read operation in response to a read request.

== Potential Applications ==
This technology could be applied in the development of more efficient and reliable memory devices for various electronic devices, such as smartphones, computers, and servers.

== Problems Solved ==
This technology helps in efficiently reading data from partially programmed memory blocks, improving the overall performance and reliability of memory devices.

== Benefits ==
The system allows for more accurate and efficient read operations on memory blocks, leading to improved data retrieval and overall system performance.

== Potential Commercial Applications ==
* Enhancing the performance of memory devices in consumer electronics
* Improving the reliability of memory storage in data centers

== Unanswered Questions ==
=== How does this technology impact the power consumption of memory devices? ===
The article does not provide information on the power consumption implications of this technology.

=== Are there any limitations to the size or type of memory blocks that can be used with this system? ===
The article does not address any potential limitations regarding the size or type of memory blocks compatible with this technology.


==Original Abstract Submitted==

A system can include a memory device containing blocks made up of wordlines respectively connected to sets of memory cells, and a processing device, operatively coupled with the memory device to perform operations including responsive to receiving a read request that specifies a block, determining a value of a metric reflective of a number of programmed wordlines of the block. The operations can also include responsive to determining, based on the value of the metric, that the block is in a partially programmed state, identifying a read voltage offset corresponding to the value of the metric, and performing, using the read voltage offset, a read operation responsive to the read request.



[[Category:G11C16/26]]
[[Category:G11C16/08]]
[[Category:G11C16/16]]