View source for 17898184. APPARATUS INCLUDING ADJUSTED WELLS AND METHODS OF MANUFACTURING THE SAME simplified abstract (Micron Technology, Inc.)

=APPARATUS INCLUDING ADJUSTED WELLS AND METHODS OF MANUFACTURING THE SAME=


==Organization Name==

[[:Category:Micron Technology, Inc.|Micron Technology, Inc.]]


[[Category:Micron Technology, Inc.]]

==Inventor(s)==

[[:Category:Michael A. Smith of Boise ID (US)|Michael A. Smith of Boise ID (US)]][[Category:Michael A. Smith of Boise ID (US)]]

==APPARATUS INCLUDING ADJUSTED WELLS AND METHODS OF MANUFACTURING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17898184 titled 'APPARATUS INCLUDING ADJUSTED WELLS AND METHODS OF MANUFACTURING THE SAME

==Simplified Explanation==

The patent application describes semiconductor devices with an adjusted bottom/deep well embedded in a semiconductor substrate, where the adjusted bottom/deep well has specific characteristics due to being formed using a temporary masked layer.

* Adjusted bottom/deep well embedded in a semiconductor substrate
* Characteristics of the adjusted bottom/deep well result from being formed using a temporary masked layer

== Potential Applications ==
* Semiconductor manufacturing
* Integrated circuits
* Electronic devices

== Problems Solved ==
* Enhanced performance of semiconductor devices
* Improved efficiency in semiconductor manufacturing
* Increased reliability of integrated circuits

== Benefits ==
* Customization of semiconductor device characteristics
* Greater control over semiconductor manufacturing process
* Enhanced functionality of electronic devices


==Original Abstract Submitted==

Semiconductor devices including an adjusted bottom/deep well embedded in a semiconductor substrate. The adjusted bottom/deep well having one or more characteristics resulting from being formed using or through a temporary masked layer.



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[[Category:H01L21/8238]]
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