View source for 17897784. CROSS-TEMPERATURE COMPENSATION BASED ON MEDIA ENDURANCE IN MEMORY DEVICES simplified abstract (Micron Technology, Inc.)

=CROSS-TEMPERATURE COMPENSATION BASED ON MEDIA ENDURANCE IN MEMORY DEVICES=


==Organization Name==

[[:Category:Micron Technology, Inc.|Micron Technology, Inc.]]


[[Category:Micron Technology, Inc.]]

==Inventor(s)==

[[:Category:Hyungseok Kim of Santa Clara CA (US)|Hyungseok Kim of Santa Clara CA (US)]][[Category:Hyungseok Kim of Santa Clara CA (US)]]

[[:Category:Vamsi Pavan Rayaprolu of Santa Clara CA (US)|Vamsi Pavan Rayaprolu of Santa Clara CA (US)]][[Category:Vamsi Pavan Rayaprolu of Santa Clara CA (US)]]

[[:Category:Sampath K. Ratnam of San Jose CA (US)|Sampath K. Ratnam of San Jose CA (US)]][[Category:Sampath K. Ratnam of San Jose CA (US)]]

==CROSS-TEMPERATURE COMPENSATION BASED ON MEDIA ENDURANCE IN MEMORY DEVICES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17897784 titled 'CROSS-TEMPERATURE COMPENSATION BASED ON MEDIA ENDURANCE IN MEMORY DEVICES

==Simplified Explanation==

The abstract describes a method for performing a read operation on a set of memory cells in a memory device by adjusting the bitline voltage based on various parameters.

* Receiving a read request for a set of memory cells
* Determining the media endurance metric and programming temperature of the memory cells
* Determining the current operating temperature of the memory device
* Calculating a voltage adjustment value based on the above metrics
* Adjusting the bitline voltage with the calculated adjustment value
* Performing the read operation with the adjusted bitline voltage

== Potential Applications ==
* Memory devices in electronic devices
* Data storage systems
* Solid-state drives

== Problems Solved ==
* Extending the lifespan of memory cells
* Improving read operation efficiency
* Enhancing overall performance of memory devices

== Benefits ==
* Increased reliability of memory devices
* Improved data retention
* Enhanced memory cell endurance
* Optimal performance under varying temperatures


==Original Abstract Submitted==

An example method of performing read operation comprises: receiving a read request with respect to a set of memory cells of a memory device; determining a value of a media endurance metric of the set of memory cells; determining a programing temperature associated with the set of memory cells; determining a current operating temperature of the memory device; determining a voltage adjustment value based on the value of the media endurance metric, the programming temperature, and the current operating temperature; adjusting, by the voltage adjustment value, a bitline voltage applied to a bitline associated with the set of memory cells; and performing, using the adjusted bitline voltage, a read operation with respect to the set of memory cells.



[[Category:G06F3/06]]