View source for 17894540. UTILIZING LAST SUCCESSFUL READ VOLTAGE LEVEL IN MEMORY ACCESS OPERATIONS simplified abstract (Micron Technology, Inc.)

=UTILIZING LAST SUCCESSFUL READ VOLTAGE LEVEL IN MEMORY ACCESS OPERATIONS=


==Organization Name==

[[:Category:Micron Technology, Inc.|Micron Technology, Inc.]]


[[Category:Micron Technology, Inc.]]

==Inventor(s)==

[[:Category:Kyungjin Kim of San Jose CA (US)|Kyungjin Kim of San Jose CA (US)]][[Category:Kyungjin Kim of San Jose CA (US)]]

==UTILIZING LAST SUCCESSFUL READ VOLTAGE LEVEL IN MEMORY ACCESS OPERATIONS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17894540 titled 'UTILIZING LAST SUCCESSFUL READ VOLTAGE LEVEL IN MEMORY ACCESS OPERATIONS

==Simplified Explanation==

The abstract describes a method for performing read operations on a memory device, involving identifying a block family associated with a memory page, determining a block family-based read voltage level, performing a read operation, determining a new read voltage level through error correction, and associating the new read voltage level with the block family.

* Method for performing read operations on a memory device
* Involves identifying a block family associated with a memory page
* Determines a block family-based read voltage level
* Performs a read operation using the block family-based read voltage level
* Determines a new read voltage level through error correction
* Associates the new read voltage level with the block family

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### Potential Applications
* Data storage devices
* Solid-state drives
* Memory modules

### Problems Solved
* Improving read operation accuracy
* Enhancing error correction capabilities
* Optimizing memory device performance

### Benefits
* Increased reliability of read operations
* Improved data integrity
* Enhanced memory device efficiency


==Original Abstract Submitted==

An example method of performing read operation with respect to a memory device comprises: receiving a request to perform a read operation with respect to a memory page of a memory device; identifying a block family associated with a block comprising the memory page; determining a block family-based read voltage level associated with the block family; performing, using the block family-based read voltage level, a read operation with respect to the memory page; determining, by performing an error correction operation with respect to the memory page, a new read voltage level associated with the block family; and associating, by a last successful read voltage level memory data structure, the new read voltage level as a last the successful read voltage level with the block family.



[[Category:G06F3/06]]