View source for 17884113. MANAGING COMPENSATION FOR CELL-TO-CELL COUPLING AND LATERAL MIGRATION IN MEMORY DEVICES BASED ON A SENSITIVITY METRIC simplified abstract (Micron Technology, Inc.)

=MANAGING COMPENSATION FOR CELL-TO-CELL COUPLING AND LATERAL MIGRATION IN MEMORY DEVICES BASED ON A SENSITIVITY METRIC=


==Organization Name==

[[:Category:Micron Technology, Inc.|Micron Technology, Inc.]]


[[Category:Micron Technology, Inc.]]

==Inventor(s)==

[[:Category:Mustafa N. Kaynak of San Diego CA (US)|Mustafa N. Kaynak of San Diego CA (US)]][[Category:Mustafa N. Kaynak of San Diego CA (US)]]

[[:Category:Patrick R. Khayat of San Diego CA (US)|Patrick R. Khayat of San Diego CA (US)]][[Category:Patrick R. Khayat of San Diego CA (US)]]

[[:Category:Sivagnanam Parthasarathy of Carlsbad CA (US)|Sivagnanam Parthasarathy of Carlsbad CA (US)]][[Category:Sivagnanam Parthasarathy of Carlsbad CA (US)]]

==MANAGING COMPENSATION FOR CELL-TO-CELL COUPLING AND LATERAL MIGRATION IN MEMORY DEVICES BASED ON A SENSITIVITY METRIC - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17884113 titled 'MANAGING COMPENSATION FOR CELL-TO-CELL COUPLING AND LATERAL MIGRATION IN MEMORY DEVICES BASED ON A SENSITIVITY METRIC

==Simplified Explanation==

- Determining sensitivity of threshold voltage of memory cells to changes in adjacent memory cells
- Associating wordlines with specific sensitivity metrics
- Performing compensatory operations on specified memory cells
- Improving memory cell performance and reliability

== Potential Applications ==
- Memory devices
- Semiconductor manufacturing
- Computer hardware

== Problems Solved ==
- Sensitivity of memory cells to changes in adjacent cells
- Performance degradation of memory cells
- Reliability issues in memory devices

== Benefits ==
- Improved memory cell performance
- Enhanced reliability of memory devices
- Better overall functionality of semiconductor devices


==Original Abstract Submitted==

Embodiments disclosed can include determining, for a wordline of the plurality of wordlines, a respective value of a sensitivity metric that reflects a sensitivity of a threshold voltage of a memory cell associated with the wordline to a change in a threshold voltage of an adjacent memory cell. Embodiments can also include determining, for the wordline, that the respective value of the sensitivity metric satisfies a threshold criterion. Embodiments can further include responsive to determining that the respective value of the sensitivity metric satisfies the threshold criterion, associating the wordline with a first wordline group, wherein the first wordline group comprises one or more wordlines, and wherein each wordline of the one or more wordlines is associated with a respective value of the sensitivity metric that satisfies the threshold criterion. Embodiments can include performing, on a specified memory cell connected to the wordline associated with the first wordline group, a compensatory operation.



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