View source for 17876920. Thin-Film Transistors For Detecting Miniature Targets simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

=Thin-Film Transistors For Detecting Miniature Targets=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Co., Ltd.|Taiwan Semiconductor Manufacturing Co., Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Co., Ltd.]]

==Inventor(s)==

[[:Category:Wei Lee of Hsinchu City (TW)|Wei Lee of Hsinchu City (TW)]][[Category:Wei Lee of Hsinchu City (TW)]]

[[:Category:Chung-Liang Cheng of Changhua County (TW)|Chung-Liang Cheng of Changhua County (TW)]][[Category:Chung-Liang Cheng of Changhua County (TW)]]

[[:Category:Pei-Wen Liu of Hsinchu City (TW)|Pei-Wen Liu of Hsinchu City (TW)]][[Category:Pei-Wen Liu of Hsinchu City (TW)]]

[[:Category:Ke-Wei Su of Hsinchu County (TW)|Ke-Wei Su of Hsinchu County (TW)]][[Category:Ke-Wei Su of Hsinchu County (TW)]]

[[:Category:Kuan-Lun Cheng of Hsin-Chu (TW)|Kuan-Lun Cheng of Hsin-Chu (TW)]][[Category:Kuan-Lun Cheng of Hsin-Chu (TW)]]

==Thin-Film Transistors For Detecting Miniature Targets - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17876920 titled 'Thin-Film Transistors For Detecting Miniature Targets

==Simplified Explanation==

The abstract describes a patent application for an interconnect structure that is placed over a semiconductor substrate. The structure consists of multiple interconnect layers and includes two thin-film transistors (TFTs) that extend vertically through some of the interconnect layers. An opening is created between the two TFTs within the interconnect structure, and a sensing film is placed on the bottom and side surfaces of the opening.

* The interconnect structure is placed over a semiconductor substrate.
* It includes multiple interconnect layers.
* Two thin-film transistors (TFTs) are vertically extended through some of the interconnect layers.
* An opening is formed between the two TFTs within the interconnect structure.
* A sensing film is applied to the bottom and side surfaces of the opening.

Potential Applications:
* This technology can be used in the manufacturing of electronic devices such as integrated circuits and microprocessors.
* It can improve the performance and functionality of these devices by providing a more efficient interconnect structure.

Problems Solved:
* The interconnect structure solves the problem of efficiently connecting different components within a semiconductor substrate.
* It allows for the vertical extension of thin-film transistors, enabling better integration and connectivity.

Benefits:
* The interconnect structure improves the overall performance and functionality of electronic devices.
* It enhances the efficiency of interconnectivity between components within a semiconductor substrate.
* The use of thin-film transistors and sensing films provides more accurate and reliable sensing capabilities.




==Original Abstract Submitted==

An interconnect structure is disposed over a semiconductor substrate. The interconnect structure includes a plurality of interconnect layers. A first thin-film transistor (TFT) and a second TFT disposed over the semiconductor substrate. The first TFT and the second TFT each vertically extend through at least a subset of the interconnect layers. An opening is formed in the interconnect structure. The opening is disposed between the first TFT and the second TFT. A sensing film is disposed over a bottom surface and side surfaces of the opening.



[[Category:H01L29/786]]
[[Category:H01L27/12]]
[[Category:H01L29/66]]
[[Category:G01N33/543]]