View source for 17876036. METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH MATERIAL IN MONOCRYSTALLINE PHASE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

=METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH MATERIAL IN MONOCRYSTALLINE PHASE=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Co., Ltd.|Taiwan Semiconductor Manufacturing Co., Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Co., Ltd.]]

==Inventor(s)==

[[:Category:Kai-Fang Cheng of Hsinchu (TW)|Kai-Fang Cheng of Hsinchu (TW)]][[Category:Kai-Fang Cheng of Hsinchu (TW)]]

[[:Category:Hsiao-Kang Chang of Hsinchu (TW)|Hsiao-Kang Chang of Hsinchu (TW)]][[Category:Hsiao-Kang Chang of Hsinchu (TW)]]

==METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH MATERIAL IN MONOCRYSTALLINE PHASE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17876036 titled 'METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH MATERIAL IN MONOCRYSTALLINE PHASE

==Simplified Explanation==

The patent application describes a method for manufacturing a semiconductor structure. Here is a simplified explanation of the abstract:

* A dielectric layer is formed on a base structure.
* A trench is created in the dielectric layer to expose the base structure.
* A metal contact is formed in the trench.
* Multiple atomic layer deposition (ALD) cycles are performed to create a series of atomic layers that cover the dielectric layer and the metal contact. These atomic layers act as an etch stop layer.
* Each ALD cycle involves forming one atomic layer and treating it to convert it into a monocrystalline phase at a temperature below 425°C.

Potential applications of this technology:

* Manufacturing of semiconductor devices, such as integrated circuits and transistors.
* Fabrication of high-performance electronic components that require precise control over the etching process.

Problems solved by this technology:

* Provides an effective etch stop layer to protect the underlying structures during the manufacturing process.
* Enables the formation of monocrystalline atomic layers at relatively low temperatures, reducing the risk of damage to the semiconductor structure.

Benefits of this technology:

* Improved manufacturing efficiency and yield by preventing damage during etching.
* Enhanced performance and reliability of semiconductor devices due to the precise control over the etching process.
* Lower production costs by reducing the need for high-temperature processing.


==Original Abstract Submitted==

A method for manufacturing a semiconductor structure includes: forming a dielectric layer on a base structure; forming a trench in the dielectric layer to expose the base structure; forming a metal contact in the trench; and performing a plurality of first atomic layer deposition (ALD) cycles to form a plurality of first atomic layers which cover the dielectric layer and the metal contact and which serve as an etch stop layer. Each of the first ALD cycles includes: forming a corresponding one of the first atomic layers; and performing a treatment to convert the corresponding first atomic layer into monocrystalline phase at a temperature not greater than 425° C.



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