View source for 17875975. SEMICONDUCTOR DEVICE STRUCTURE WITH NANOSTRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

=SEMICONDUCTOR DEVICE STRUCTURE WITH NANOSTRUCTURE AND METHOD FOR FORMING THE SAME=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Co., Ltd.|Taiwan Semiconductor Manufacturing Co., Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Co., Ltd.]]

==Inventor(s)==

[[:Category:Chih-Ching Wang of Kinmen County (TW)|Chih-Ching Wang of Kinmen County (TW)]][[Category:Chih-Ching Wang of Kinmen County (TW)]]

[[:Category:Chung-I Yang of Hsinchu City (TW)|Chung-I Yang of Hsinchu City (TW)]][[Category:Chung-I Yang of Hsinchu City (TW)]]

[[:Category:Wei-Yang Lee of Taipei City (TW)|Wei-Yang Lee of Taipei City (TW)]][[Category:Wei-Yang Lee of Taipei City (TW)]]

[[:Category:Wen-Hsing Hsieh of Hsinchu City (TW)|Wen-Hsing Hsieh of Hsinchu City (TW)]][[Category:Wen-Hsing Hsieh of Hsinchu City (TW)]]

==SEMICONDUCTOR DEVICE STRUCTURE WITH NANOSTRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17875975 titled 'SEMICONDUCTOR DEVICE STRUCTURE WITH NANOSTRUCTURE AND METHOD FOR FORMING THE SAME

==Simplified Explanation==

The abstract describes a method for forming a semiconductor device structure. The method involves several steps such as providing a substrate, forming a nanostructure stack over the substrate, and forming a gate stack over the nanostructure stack and the substrate. The method also includes removing the first nanostructure to create a gap, forming a spacer layer in the gap, and partially removing the nanostructure stack to create a trench. Finally, a source/drain structure is formed in the trench.

* The method involves providing a substrate and forming a nanostructure stack over it.
* A gate stack is formed over the nanostructure stack and the substrate.
* The first nanostructure is removed to create a gap between the substrate and the second nanostructure.
* A first spacer layer is formed in the gap, and a gate spacer is formed over the sidewall of the gate stack.
* The nanostructure stack is partially removed to create a trench in the areas not covered by the gate stack and gate spacer.
* A source/drain structure is formed in the trench and over the first spacer layer.

Potential applications of this technology:
* This method can be used in the fabrication of semiconductor devices, such as transistors, integrated circuits, and memory devices.
* It can be applied in the manufacturing of advanced electronic devices with improved performance and functionality.

Problems solved by this technology:
* The method provides a way to form a semiconductor device structure with precise control over the dimensions and placement of the nanostructures and gate stack.
* It allows for the formation of a source/drain structure in the trench, which enhances the performance and efficiency of the semiconductor device.

Benefits of this technology:
* The method enables the fabrication of semiconductor devices with improved performance, such as faster switching speeds and lower power consumption.
* It offers a more efficient and reliable process for creating nanostructures and gate stacks in semiconductor devices.
* The precise control over the dimensions and placement of the nanostructures allows for better integration and miniaturization of electronic components.


==Original Abstract Submitted==

A method for forming a semiconductor device structure is provided. The method includes providing a substrate. The method includes forming a nanostructure stack over the substrate. The method includes forming a gate stack over the nanostructure stack and the substrate. The method includes removing the first nanostructure forming a first gap between the substrate and the second nanostructure. The method includes forming a first spacer layer in the first gap and a gate spacer over a sidewall of the gate stack. The method includes partially removing the nanostructure stack, which is not covered by the gate stack and the gate spacer, to form a first trench in the nanostructure stack. The method includes forming a source/drain structure in the first trench and over the first spacer layer.



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