View source for 17850475. CPP-AGNOSTIC SOURCE-DRAIN CONTACT FORMATION FOR GATE-ALL-AROUND DEVICES WITH DIELECTRIC ISOLATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

=CPP-AGNOSTIC SOURCE-DRAIN CONTACT FORMATION FOR GATE-ALL-AROUND DEVICES WITH DIELECTRIC ISOLATION=


==Organization Name==

[[:Category:INTERNATIONAL BUSINESS MACHINES CORPORATION|INTERNATIONAL BUSINESS MACHINES CORPORATION]]


[[Category:INTERNATIONAL BUSINESS MACHINES CORPORATION]]

==Inventor(s)==

[[:Category:Julien Frougier of Albany NY (US)|Julien Frougier of Albany NY (US)]][[Category:Julien Frougier of Albany NY (US)]]

[[:Category:Ruilong Xie of Niskayuna NY (US)|Ruilong Xie of Niskayuna NY (US)]][[Category:Ruilong Xie of Niskayuna NY (US)]]

[[:Category:Kangguo Cheng of Schenectady NY (US)|Kangguo Cheng of Schenectady NY (US)]][[Category:Kangguo Cheng of Schenectady NY (US)]]

[[:Category:CHANRO Park of CLIFTON PARK NY (US)|CHANRO Park of CLIFTON PARK NY (US)]][[Category:CHANRO Park of CLIFTON PARK NY (US)]]

[[:Category:Oleg Gluschenkov of Tannersville NY (US)|Oleg Gluschenkov of Tannersville NY (US)]][[Category:Oleg Gluschenkov of Tannersville NY (US)]]

==CPP-AGNOSTIC SOURCE-DRAIN CONTACT FORMATION FOR GATE-ALL-AROUND DEVICES WITH DIELECTRIC ISOLATION - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17850475 titled 'CPP-AGNOSTIC SOURCE-DRAIN CONTACT FORMATION FOR GATE-ALL-AROUND DEVICES WITH DIELECTRIC ISOLATION

==Simplified Explanation==

The patent application describes a semiconductor structure that includes a source/drain (S/D) epitaxial growth formed over a bottom dielectric isolation region. It also includes at least one first semiconductor layer within the S/D region and at least one second semiconductor layer partially within a gate region. The second semiconductor layer extends into a spacer region to connect with the S/D epitaxial growth. The structure has different gate-to-gate spaces in different regions.

* The semiconductor structure includes S/D epitaxial growth over a dielectric isolation region.
* It has first and second semiconductor layers within the S/D and gate regions.
* The second semiconductor layer extends into a spacer region to connect with the S/D epitaxial growth.
* The structure has different gate-to-gate spaces in different regions.

== Potential Applications ==
This technology can be applied in various semiconductor devices and integrated circuits, including but not limited to:
* Microprocessors
* Memory devices
* Power amplifiers
* Sensors

== Problems Solved ==
The semiconductor structure addresses the following problems:
* Ensuring proper connection between the second semiconductor layer and the S/D epitaxial growth.
* Managing gate-to-gate spacing in different regions to optimize device performance.
* Providing a reliable and efficient structure for semiconductor devices.

== Benefits ==
The benefits of this technology include:
* Improved connectivity between different semiconductor layers.
* Enhanced device performance through optimized gate-to-gate spacing.
* Reliable and efficient structure for semiconductor devices.
* Potential for improved functionality and integration in various applications.


==Original Abstract Submitted==

A semiconductor structure is presented including source/drain (S/D) epitaxial growth formed over a bottom dielectric isolation region, at least one first semiconductor layer disposed within the S/D epitaxial growth in a S/D region and at least one second semiconductor layer disposed partially within a gate region. The at least one second semiconductor layer extends from the gate region into a spacer region to enable a connection to the S/D epitaxial growth. The semiconductor structure further includes a first region with adjacent devices exhibiting a first Contacted gate Poly Pitch (CPP) defining a first gate-to-gate space and a second region with adjacent devices exhibiting a second CPP defining a second gate-to-gate space, where adjacent devices exhibiting the first CPP have a smaller gate-to-gate canyon than the adjacent devices exhibiting the second CPP such that the second gate-to-gate space is greater than the first gate-to-gate space.



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