View source for 17838551. SEMICONDUCTOR DEVICES HAVING IMPROVED ELECTRICAL INTERCONNECT STRUCTURES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=SEMICONDUCTOR DEVICES HAVING IMPROVED ELECTRICAL INTERCONNECT STRUCTURES=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Panjae Park of Seoul (KR)|Panjae Park of Seoul (KR)]][[Category:Panjae Park of Seoul (KR)]]

[[:Category:Subin Choi of Suwon-si (KR)|Subin Choi of Suwon-si (KR)]][[Category:Subin Choi of Suwon-si (KR)]]

[[:Category:Chulhong Park of Seongnam-si (KR)|Chulhong Park of Seongnam-si (KR)]][[Category:Chulhong Park of Seongnam-si (KR)]]

==SEMICONDUCTOR DEVICES HAVING IMPROVED ELECTRICAL INTERCONNECT STRUCTURES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17838551 titled 'SEMICONDUCTOR DEVICES HAVING IMPROVED ELECTRICAL INTERCONNECT STRUCTURES

==Simplified Explanation==

The patent application describes a semiconductor device with a specific structure and layout of components. Here is a simplified explanation of the abstract:

* The semiconductor device has an active region on a substrate, a gate electrode, a contact structure, and vias.
* The active region extends in one direction on the substrate.
* The gate electrode intersects the active region and extends in a perpendicular direction.
* The contact structure is located on one side of the gate electrode and extends in the same perpendicular direction.
* A first via is connected to the contact structure and has a longer length in the perpendicular direction than in the other direction.
* A plurality of first metal interconnections are provided on the first via, extending in the same direction as the active region.
* A second via is connected to the first metal interconnections and has a longer length in the perpendicular direction than in the other direction.

Potential applications of this technology:

* Semiconductor devices with improved performance and functionality.
* Integrated circuits with optimized layout and connectivity.
* Electronics for various industries such as consumer electronics, telecommunications, and automotive.

Problems solved by this technology:

* Efficient routing of electrical signals in a semiconductor device.
* Reduction of signal interference and noise.
* Enhanced integration and miniaturization of electronic components.

Benefits of this technology:

* Improved performance and reliability of semiconductor devices.
* Enhanced functionality and connectivity.
* Higher efficiency and reduced power consumption.
* Cost-effective manufacturing processes.


==Original Abstract Submitted==

A semiconductor device includes an active region extending on a substrate in a first direction, a gate electrode intersecting the active region and extending in a second direction, perpendicular to the first direction, a contact structure disposed on the active region on one side of the gate electrode and extending in the second direction, and a first via disposed on the contact structure to be connected to the contact structure and has a shape in which a length in the second direction is greater than a length in the first direction. A plurality of first metal interconnections are provided, which extend in the first direction on the first via, and are connected to the first via. A second via is provided, which is disposed on the plurality of first metal interconnections to be connected to the plurality of first metal interconnections and has a shape in which a length in the second direction is greater than a length in the first direction.



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