View source for 17836781. SEMICONDUCTOR DEVICE INCLUDING METAL SURROUNDING VIA CONTACT AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

=SEMICONDUCTOR DEVICE INCLUDING METAL SURROUNDING VIA CONTACT AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Co., Ltd.|Taiwan Semiconductor Manufacturing Co., Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Co., Ltd.]]

==Inventor(s)==

[[:Category:Shuen-Shin Liang of Hsinchu (TW)|Shuen-Shin Liang of Hsinchu (TW)]][[Category:Shuen-Shin Liang of Hsinchu (TW)]]

[[:Category:Chia-Hung Chu of Hsinchu (TW)|Chia-Hung Chu of Hsinchu (TW)]][[Category:Chia-Hung Chu of Hsinchu (TW)]]

[[:Category:Po-Chin Chang of Hsinchu (TW)|Po-Chin Chang of Hsinchu (TW)]][[Category:Po-Chin Chang of Hsinchu (TW)]]

[[:Category:Hsu-Kai Chang of Hsinchu (TW)|Hsu-Kai Chang of Hsinchu (TW)]][[Category:Hsu-Kai Chang of Hsinchu (TW)]]

[[:Category:Kuan-Kan Hu of Hsinchu (TW)|Kuan-Kan Hu of Hsinchu (TW)]][[Category:Kuan-Kan Hu of Hsinchu (TW)]]

[[:Category:Ken-Yu Chang of Hsinchu (TW)|Ken-Yu Chang of Hsinchu (TW)]][[Category:Ken-Yu Chang of Hsinchu (TW)]]

[[:Category:Hung-Yi Huang of Hsinchu (TW)|Hung-Yi Huang of Hsinchu (TW)]][[Category:Hung-Yi Huang of Hsinchu (TW)]]

[[:Category:Harry Chien of Hsinchu (TW)|Harry Chien of Hsinchu (TW)]][[Category:Harry Chien of Hsinchu (TW)]]

[[:Category:Wei-Yip Loh of Hsinchu (TW)|Wei-Yip Loh of Hsinchu (TW)]][[Category:Wei-Yip Loh of Hsinchu (TW)]]

[[:Category:Chun-I Tsai of Hsinchu (TW)|Chun-I Tsai of Hsinchu (TW)]][[Category:Chun-I Tsai of Hsinchu (TW)]]

[[:Category:Hong-Mao Lee of Hsinchu (TW)|Hong-Mao Lee of Hsinchu (TW)]][[Category:Hong-Mao Lee of Hsinchu (TW)]]

[[:Category:Sung-Li Wang of Hsinchu (TW)|Sung-Li Wang of Hsinchu (TW)]][[Category:Sung-Li Wang of Hsinchu (TW)]]

[[:Category:Pinyen Lin of Hsinchu (TW)|Pinyen Lin of Hsinchu (TW)]][[Category:Pinyen Lin of Hsinchu (TW)]]

[[:Category:Chuan-Hui Shen of Hsinchu (TW)|Chuan-Hui Shen of Hsinchu (TW)]][[Category:Chuan-Hui Shen of Hsinchu (TW)]]

==SEMICONDUCTOR DEVICE INCLUDING METAL SURROUNDING VIA CONTACT AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17836781 titled 'SEMICONDUCTOR DEVICE INCLUDING METAL SURROUNDING VIA CONTACT AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

==Simplified Explanation==

The abstract describes a semiconductor device that includes various layers and structures for improved performance and connectivity. Here is a simplified explanation of the abstract:

* The semiconductor device consists of a substrate, which serves as the foundation.
* A source/drain region is embedded in the substrate, providing electrical connections.
* A silicide structure is placed on top of the source/drain region, enhancing conductivity.
* A first dielectric layer is added over the substrate, providing insulation.
* A conductive contact is inserted into the first dielectric layer, positioned above the silicide structure.
* A second dielectric layer is applied over the first dielectric layer, providing additional insulation.
* A via contact is placed in the second dielectric layer, connecting to the conductive contact.
* A first metal surrounds the via contact, further enhancing connectivity.

Potential applications of this technology:

* Integrated circuits: The semiconductor device can be used in the production of integrated circuits, enabling improved performance and connectivity.
* Microprocessors: The technology can be implemented in microprocessors, enhancing their functionality and efficiency.
* Memory devices: The semiconductor device can be utilized in memory devices, improving their speed and reliability.

Problems solved by this technology:

* Enhanced conductivity: The addition of the silicide structure improves the conductivity of the source/drain region, leading to better electrical connections.
* Improved insulation: The use of multiple dielectric layers provides better insulation between different components, reducing the risk of electrical interference.

Benefits of this technology:

* Increased performance: The improved conductivity and insulation result in enhanced performance of the semiconductor device.
* Better connectivity: The various layers and structures enable more efficient and reliable electrical connections.
* Higher efficiency: The technology allows for more efficient use of electrical energy, leading to improved overall efficiency of the device.


==Original Abstract Submitted==

A semiconductor device includes a substrate, a source/drain region disposed in the substrate, a silicide structure disposed on the source/drain region, a first dielectric layer disposed over the substrate, a conductive contact disposed in the first dielectric layer and over the silicide structure, a second dielectric layer disposed over the first dielectric layer, a via contact disposed in the second dielectric layer and connected to the conductive contact, and a first metal surrounding the via contact.



[[Category:H01L23/522]]
[[Category:H01L23/532]]
[[Category:H01L21/768]]