View source for 17835175. MICRO-ELECTROMECHANICAL SYSTEMS (MEMS) DEVICE WITH OUTGAS LAYER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

=MICRO-ELECTROMECHANICAL SYSTEMS (MEMS) DEVICE WITH OUTGAS LAYER=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Co., Ltd.|Taiwan Semiconductor Manufacturing Co., Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Co., Ltd.]]

==Inventor(s)==

[[:Category:Fan Hu of Taipei City (TW)|Fan Hu of Taipei City (TW)]][[Category:Fan Hu of Taipei City (TW)]]

[[:Category:Wen-Chuan Tai of Hsinchu City (TW)|Wen-Chuan Tai of Hsinchu City (TW)]][[Category:Wen-Chuan Tai of Hsinchu City (TW)]]

[[:Category:Li-Chun Peng of Hsin-Chu City (TW)|Li-Chun Peng of Hsin-Chu City (TW)]][[Category:Li-Chun Peng of Hsin-Chu City (TW)]]

[[:Category:Hsiang-Fu Chen of Zhubei City (TW)|Hsiang-Fu Chen of Zhubei City (TW)]][[Category:Hsiang-Fu Chen of Zhubei City (TW)]]

[[:Category:Ching-Kai Shen of Zhubei City (TW)|Ching-Kai Shen of Zhubei City (TW)]][[Category:Ching-Kai Shen of Zhubei City (TW)]]

[[:Category:Hung-Wei Liang of New Taipei City (TW)|Hung-Wei Liang of New Taipei City (TW)]][[Category:Hung-Wei Liang of New Taipei City (TW)]]

[[:Category:Jung-Kuo Tu of Hsinchu City (TW)|Jung-Kuo Tu of Hsinchu City (TW)]][[Category:Jung-Kuo Tu of Hsinchu City (TW)]]

==MICRO-ELECTROMECHANICAL SYSTEMS (MEMS) DEVICE WITH OUTGAS LAYER - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17835175 titled 'MICRO-ELECTROMECHANICAL SYSTEMS (MEMS) DEVICE WITH OUTGAS LAYER

==Simplified Explanation==

The present disclosure describes an integrated chip that includes a semiconductor device substrate and multiple semiconductor devices arranged on it. The chip also includes a micro-electromechanical system (MEMS) layer, which has two moveable masses. A capping layer covers the MEMS layer, with one surface directly over each moveable mass. An outgas layer is present on the surface over the first moveable mass, creating a cavity for it, while the surface over the second moveable mass creates a separate cavity for it.

* Integrated chip with semiconductor devices and a MEMS layer
* MEMS layer includes two moveable masses
* Capping layer covers the MEMS layer
* Outgas layer creates a cavity for the first moveable mass
* Separate cavity is created for the second moveable mass

Potential applications of this technology:
* Micro-electromechanical systems (MEMS) devices
* Sensors and actuators
* Microfluidics and lab-on-a-chip systems

Problems solved by this technology:
* Integration of semiconductor devices and MEMS devices on a single chip
* Providing separate cavities for multiple moveable masses

Benefits of this technology:
* Compact design with integrated functionality
* Improved performance and reliability of MEMS devices
* Cost-effective manufacturing process


==Original Abstract Submitted==

The present disclosure relates to an integrated chip including a semiconductor device substrate and a plurality of semiconductor devices arranged along the semiconductor device substrate. A micro-electromechanical system (MEMS) layer overlies the semiconductor device substrate. The MEMS layer includes a first moveable mass and a second moveable mass. A capping layer overlies the MEMS layer. The capping layer has a first lower surface directly over the first moveable mass and a second lower surface directly over the second moveable mass. An outgas layer is on the first lower surface and directly between the first pair of sidewalls. A lower surface of the outgas layer delimits a first cavity in which the first moveable mass is arranged. The second lower surface of the capping layer delimits a second cavity in which the second moveable mass is arranged.



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