View source for 17816257. SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

=SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Co., Ltd.|Taiwan Semiconductor Manufacturing Co., Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Co., Ltd.]]

==Inventor(s)==

[[:Category:Y.W. Huang of Tainan City (TW)|Y.W. Huang of Tainan City (TW)]][[Category:Y.W. Huang of Tainan City (TW)]]

[[:Category:Chen-Hsien Lin of Tainan City (TW)|Chen-Hsien Lin of Tainan City (TW)]][[Category:Chen-Hsien Lin of Tainan City (TW)]]

[[:Category:U-Ting Chen of Wanluan Township (TW)|U-Ting Chen of Wanluan Township (TW)]][[Category:U-Ting Chen of Wanluan Township (TW)]]

[[:Category:Shu-Ting Tsai of Kaohsiung City (TW)|Shu-Ting Tsai of Kaohsiung City (TW)]][[Category:Shu-Ting Tsai of Kaohsiung City (TW)]]

[[:Category:Tzu-Hsuan Hsu of Kaohsiung City (TW)|Tzu-Hsuan Hsu of Kaohsiung City (TW)]][[Category:Tzu-Hsuan Hsu of Kaohsiung City (TW)]]

==SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17816257 titled 'SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING

==Simplified Explanation==

The patent application describes techniques for improving the performance of a backside illumination image sensor by forming a biased backside deep trench isolation and grid structure. The techniques involve creating an array of backside deep trench isolation structures and a biasing-pad that connects to the array through the grid structure. This configuration helps reduce electrical cross-talk and oblique light cross-talk between the photodiodes of the image sensor, leading to improved performance.

* The patent application proposes forming an array of backside deep trench isolation structures and a biasing-pad that connects to the array through a grid structure.
* This configuration aims to reduce electrical cross-talk and oblique light cross-talk between the photodiodes of the backside illumination image sensor.
* The techniques may help improve the performance of the image sensor by suppressing dark current, reducing the number of white pixels, and minimizing cross-talk within the sensor.

== Potential Applications ==
* Backside illumination image sensors used in digital cameras, smartphones, and other imaging devices.
* Image sensors used in medical imaging equipment, surveillance cameras, and automotive cameras.

== Problems Solved ==
* Electrical cross-talk between photodiodes in a backside illumination image sensor.
* Oblique light cross-talk between photodiodes in a backside illumination image sensor.
* Dark current within a backside illumination image sensor.
* Presence of white pixels in the output of a backside illumination image sensor.
* Cross-talk within a backside illumination image sensor.

== Benefits ==
* Improved performance and image quality of backside illumination image sensors.
* Reduction in electrical and oblique light cross-talk, leading to clearer and more accurate images.
* Suppression of dark current, resulting in better signal-to-noise ratio.
* Decreased occurrence of white pixels in the output, enhancing image fidelity.
* Minimized cross-talk within the image sensor, improving overall image resolution and clarity.


==Original Abstract Submitted==

Some implementations described herein provide for techniques to form a biased backside deep trench isolation and grid structure for a backside illumination image sensor. The techniques include forming an array of backside deep trench isolation structures and a biasing-pad that electrically connects to the array of metal-filled backside deep trench isolation structures through the grid structure. The array of backside deep trench isolation structures, the grid structure, and the biasing-pad structure may reduce a likelihood of electrical cross-talk and/or oblique light cross-talk between the photodiodes of the backside illumination image sensor. In this way, a performance of the backside illumination image sensor may be improved. Such improvements may include a suppression of a dark current within the backside illumination image sensor, a reduction in a number of white pixels, and a reduction in cross-talk within the backside illumination image sensor.



[[Category:H01L27/146]]