View source for 17725722. Forming Silicon-Containing Material Over Metal Gate To Reduce Loading Between Long Channel And Short Channel Transistors simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

=Forming Silicon-Containing Material Over Metal Gate To Reduce Loading Between Long Channel And Short Channel Transistors=


==Organization Name==

[[:Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.|TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]


[[Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]

==Inventor(s)==

[[:Category:Wei-Cheng Wang of Hsinchu (TW)|Wei-Cheng Wang of Hsinchu (TW)]][[Category:Wei-Cheng Wang of Hsinchu (TW)]]

[[:Category:Shih-Hang Chiu of Taichung City (TW)|Shih-Hang Chiu of Taichung City (TW)]][[Category:Shih-Hang Chiu of Taichung City (TW)]]

[[:Category:Kuan-Ting Liu of Hsinchu City (TW)|Kuan-Ting Liu of Hsinchu City (TW)]][[Category:Kuan-Ting Liu of Hsinchu City (TW)]]

[[:Category:Cheng-Lung Hung of Hsinchu City (TW)|Cheng-Lung Hung of Hsinchu City (TW)]][[Category:Cheng-Lung Hung of Hsinchu City (TW)]]

[[:Category:Chi On Chui of Hsinchu City (TW)|Chi On Chui of Hsinchu City (TW)]][[Category:Chi On Chui of Hsinchu City (TW)]]

==Forming Silicon-Containing Material Over Metal Gate To Reduce Loading Between Long Channel And Short Channel Transistors - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17725722 titled 'Forming Silicon-Containing Material Over Metal Gate To Reduce Loading Between Long Channel And Short Channel Transistors

==Simplified Explanation==

The patent application describes a semiconductor device with a metal gate electrode and various layers on top of it. 

* The device includes an active region, metal gate electrode, conductive layer, silicon-containing layer, and dielectric layer.
* The metal gate electrode is placed over the active region.
* The conductive layer is placed over the metal gate electrode.
* A first portion of the conductive layer has a silicon-containing layer on top of it.
* A second portion of the conductive layer has a dielectric layer on top of it.
* A gate via extends vertically through the silicon-containing layer.
* The gate via is positioned over the metal gate electrode and is electrically connected to it.

Potential applications of this technology:

* Semiconductor manufacturing industry
* Electronics industry
* Integrated circuit design and production

Problems solved by this technology:

* Improved performance and functionality of semiconductor devices
* Enhanced electrical connectivity and integration of different layers
* Efficient use of space within the device structure

Benefits of this technology:

* Increased efficiency and reliability of semiconductor devices
* Enhanced electrical performance and signal transmission
* Compact design and improved integration capabilities


==Original Abstract Submitted==

A semiconductor device includes an active region. A metal gate electrode is disposed over the active region. A conductive layer is disposed over the metal gate electrode. A silicon-containing layer is disposed over a first portion of the conductive layer. A dielectric layer is disposed over a second portion of the conductive layer. A gate via vertically extends through the silicon-containing layer. The gate via is disposed over, and electrically coupled to, the metal gate electrode.



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