View source for 17685942. MEMORY DEVICE INCLUDING VERTICAL STACK STRUCTURE, METHOD OF FABRICATING THE SAME, AND ELECTRONIC DEVICE INCLUDING MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=MEMORY DEVICE INCLUDING VERTICAL STACK STRUCTURE, METHOD OF FABRICATING THE SAME, AND ELECTRONIC DEVICE INCLUDING MEMORY DEVICE=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Yumin Kim of Seoul (KR)|Yumin Kim of Seoul (KR)]][[Category:Yumin Kim of Seoul (KR)]]

[[:Category:Doyoon Kim of Hwaseong-si (KR)|Doyoon Kim of Hwaseong-si (KR)]][[Category:Doyoon Kim of Hwaseong-si (KR)]]

[[:Category:Seyun Kim of Seoul (KR)|Seyun Kim of Seoul (KR)]][[Category:Seyun Kim of Seoul (KR)]]

[[:Category:Hyunjae Song of Hwaseong-si (KR)|Hyunjae Song of Hwaseong-si (KR)]][[Category:Hyunjae Song of Hwaseong-si (KR)]]

[[:Category:Seungyeul Yang of Hwaseong-si (KR)|Seungyeul Yang of Hwaseong-si (KR)]][[Category:Seungyeul Yang of Hwaseong-si (KR)]]

==MEMORY DEVICE INCLUDING VERTICAL STACK STRUCTURE, METHOD OF FABRICATING THE SAME, AND ELECTRONIC DEVICE INCLUDING MEMORY DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17685942 titled 'MEMORY DEVICE INCLUDING VERTICAL STACK STRUCTURE, METHOD OF FABRICATING THE SAME, AND ELECTRONIC DEVICE INCLUDING MEMORY DEVICE

==Simplified Explanation==

The patent application describes a memory device with a vertical stack structure, its manufacturing method, and its application in electronic devices. The memory device includes multiple layers such as an oxygen scavenger layer, a recording material layer, a channel layer, a gate insulating layer, and a gate electrode. The oxygen scavenger layer contains an element that creates oxygen vacancies in the recording material layer.

* The memory device has a vertical stack structure.
* It includes an oxygen scavenger layer that removes oxygen.
* The recording material layer is in direct contact with the oxygen scavenger layer.
* A channel layer is present on top of the recording material layer.
* A gate insulating layer is on top of the channel layer.
* A gate electrode is present on top of the gate insulating layer.
* The oxygen scavenger layer introduces oxygen vacancies in the recording material layer.

Potential applications of this technology:

* Memory devices in electronic devices such as smartphones, tablets, and computers.
* Data storage in various industries including automotive, aerospace, and healthcare.
* High-density memory devices for advanced computing systems.

Problems solved by this technology:

* Oxygen scavenger layer prevents the presence of oxygen, which can degrade the performance of the memory device.
* The introduction of oxygen vacancies in the recording material layer enhances the memory device's functionality and reliability.

Benefits of this technology:

* Improved memory device performance and reliability.
* Increased data storage capacity.
* Compatibility with various electronic devices and industries.


==Original Abstract Submitted==

Disclosed are a memory device including a vertical stack structure, a method of manufacturing the same, and/or an electronic device including the memory device. The memory device including a vertical stack structure includes an oxygen scavenger layer on a base substrate, a recording material layer on the oxygen scavenger layer and in direct contact with the oxygen scavenger layer, a channel layer on the recording material layer, a gate insulating layer on the channel layer, and a gate electrode on the gate insulating layer. The oxygen scavenger layer includes an element that forms oxygen vacancies in the recording material layer and does not include oxygen.



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