View source for 17585942. METHODS AND SYSTEMS FOR INTEGRATED CIRCUIT PHOTOMASK PATTERNING simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

=METHODS AND SYSTEMS FOR INTEGRATED CIRCUIT PHOTOMASK PATTERNING=


==Organization Name==

[[:Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.|TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]


[[Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]

==Inventor(s)==

[[:Category:Wei-Hao Huang of Taichung (TW)|Wei-Hao Huang of Taichung (TW)]][[Category:Wei-Hao Huang of Taichung (TW)]]

[[:Category:Chun Ting Lee of Hsinchu (TW)|Chun Ting Lee of Hsinchu (TW)]][[Category:Chun Ting Lee of Hsinchu (TW)]]

[[:Category:Cheng-Tse Lai of Hsinchu (TW)|Cheng-Tse Lai of Hsinchu (TW)]][[Category:Cheng-Tse Lai of Hsinchu (TW)]]

==METHODS AND SYSTEMS FOR INTEGRATED CIRCUIT PHOTOMASK PATTERNING - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17585942 titled 'METHODS AND SYSTEMS FOR INTEGRATED CIRCUIT PHOTOMASK PATTERNING

==Simplified Explanation==

The patent application describes methods and systems for patterning photomasks used in integrated circuit (IC) manufacturing. The methods involve inserting a dummy region in the IC design layout, which is separated from the active region by a certain distance. Various operations are performed on the layout to reduce the distance between the active and dummy regions. Then, a dummy region size reduction is performed to increase the distance to a value greater than the minimum feature size to be patterned by a photolithography tool. Finally, a photomask is formed using the modified IC design layout.

* The method involves inserting a dummy region in an IC design layout.
* The dummy region is initially separated from the active region by a certain distance.
* Various operations are performed on the layout to reduce the distance between the active and dummy regions.
* A dummy region size reduction is performed to increase the distance to a value greater than the minimum feature size to be patterned.
* A photomask is formed using the modified IC design layout.

== Potential Applications ==
* This technology can be applied in the manufacturing of integrated circuits.
* It can be used to improve the accuracy and precision of photomask patterning.

== Problems Solved ==
* The technology solves the problem of reducing the distance between active and dummy regions in IC design layouts.
* It addresses the challenge of increasing the distance between active and dummy regions to meet the requirements of photolithography tools.

== Benefits ==
* The method allows for more precise and accurate patterning of photomasks.
* It improves the overall quality and performance of integrated circuits.
* The technology can potentially reduce manufacturing defects and improve yield rates.


==Original Abstract Submitted==

Methods and systems for IC photomask patterning are described. In some embodiments, a method includes inserting a dummy region in an IC design layout, the IC design layout includes an active region, and the active region and the dummy region is separated by a first distance. The method further includes performing one or more operations on the IC design layout, and the active region and the dummy region is separated by a second distance substantially less than the first distance. The method further includes performing a dummy region size reduction on the IC design layout to increase the second distance to a third distance substantially greater than the second distance, and the third distance is substantially greater than a minimum feature size to be patterned by a photolithography tool. The method further includes forming a photomask using the IC design layout.



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