View source for 17569057. STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH EPITAXIAL STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

=STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH EPITAXIAL STRUCTURES=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Co., Ltd.|Taiwan Semiconductor Manufacturing Co., Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Co., Ltd.]]

==Inventor(s)==

[[:Category:Ka-Hing Fung of Zhudong Township (TW)|Ka-Hing Fung of Zhudong Township (TW)]][[Category:Ka-Hing Fung of Zhudong Township (TW)]]

==STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH EPITAXIAL STRUCTURES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17569057 titled 'STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH EPITAXIAL STRUCTURES

==Simplified Explanation==

The patent application describes a semiconductor device structure and a method for forming it. The structure includes a stack of channel structures over a semiconductor substrate, a gate stack wrapped around the channel structures, a source/drain epitaxial structure adjacent to the channel structures, multiple inner spacers between the gate stack and the source/drain epitaxial structure, and multiple epitaxial structures separating the inner spacers from the source/drain epitaxial structure.

* The semiconductor device structure includes a stack of channel structures, a gate stack, a source/drain epitaxial structure, inner spacers, and epitaxial structures.
* The channel structures are placed over a semiconductor substrate.
* The gate stack wraps around the channel structures.
* The source/drain epitaxial structure is located adjacent to the channel structures.
* Multiple inner spacers are positioned between the gate stack and the source/drain epitaxial structure.
* Multiple epitaxial structures separate the inner spacers from the source/drain epitaxial structure.

== Potential Applications ==
* This semiconductor device structure and method can be used in various electronic devices that require high-performance and efficient semiconductor components.
* It can be applied in the manufacturing of advanced integrated circuits, such as microprocessors, memory chips, and other semiconductor devices.

== Problems Solved ==
* The described structure and method provide improved performance and efficiency in semiconductor devices.
* The use of multiple inner spacers and epitaxial structures helps to optimize the device's functionality and reliability.
* The structure allows for better control of the electrical properties and characteristics of the semiconductor device.

== Benefits ==
* The semiconductor device structure offers enhanced performance and efficiency compared to existing designs.
* The method for forming the structure provides a reliable and cost-effective manufacturing process.
* The use of inner spacers and epitaxial structures improves the overall functionality and reliability of the semiconductor device.


==Original Abstract Submitted==

A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a stack of channel structures over a semiconductor substrate and a gate stack wrapped around the channel structures. The semiconductor device structure also includes a source/drain epitaxial structure adjacent to the channel structures and multiple inner spacers. Each of the inner spacers is between the gate stack and the source/drain epitaxial structure. The semiconductor device structure further includes multiple epitaxial structures separating the inner spacers from the source/drain epitaxial structure.



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