View source for 17551463. NANOSHEET DEVICE WITH T-SHAPED DUAL INNER SPACER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

=NANOSHEET DEVICE WITH T-SHAPED DUAL INNER SPACER=


==Organization Name==

[[:Category:INTERNATIONAL BUSINESS MACHINES CORPORATION|INTERNATIONAL BUSINESS MACHINES CORPORATION]]


[[Category:INTERNATIONAL BUSINESS MACHINES CORPORATION]]

==Inventor(s)==

[[:Category:Pouya Hashemi of Purchase NY (US)|Pouya Hashemi of Purchase NY (US)]][[Category:Pouya Hashemi of Purchase NY (US)]]

[[:Category:Alexander Reznicek of Troy NY (US)|Alexander Reznicek of Troy NY (US)]][[Category:Alexander Reznicek of Troy NY (US)]]

[[:Category:Takashi Ando of Eastchester NY (US)|Takashi Ando of Eastchester NY (US)]][[Category:Takashi Ando of Eastchester NY (US)]]

[[:Category:Ruilong Xie of Niskayuna NY (US)|Ruilong Xie of Niskayuna NY (US)]][[Category:Ruilong Xie of Niskayuna NY (US)]]

==NANOSHEET DEVICE WITH T-SHAPED DUAL INNER SPACER - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17551463 titled 'NANOSHEET DEVICE WITH T-SHAPED DUAL INNER SPACER

==Simplified Explanation==

The abstract describes a field effect device that includes a semiconductor nanosheet segment, a T-shaped inner spacer, a gate dielectric layer, a first work function material plug, and a second work function material layer.

* The field effect device consists of a semiconductor nanosheet segment placed on top of a substrate.
* A T-shaped inner spacer is present on the semiconductor nanosheet segment.
* A gate dielectric layer is applied on the semiconductor nanosheet segment.
* A first work function material plug is placed on the gate dielectric layer.
* A second work function material layer is added on top of the first work function material plug and the center portion of the gate dielectric layer.
* The second work function material layer is made of a different material than the first work function material plug.

==Potential Applications==
* This field effect device can be used in various electronic devices, such as transistors and integrated circuits.
* It can be utilized in the development of advanced semiconductor technologies.

==Problems Solved==
* The field effect device addresses the need for improved performance and functionality in electronic devices.
* It solves the problem of achieving different work function materials in a single device.

==Benefits==
* The use of a T-shaped inner spacer enhances the performance and efficiency of the field effect device.
* The combination of different work function materials allows for better control and customization of device characteristics.
* The technology enables the development of more advanced and versatile electronic devices.


==Original Abstract Submitted==

A field effect device is provided. The field effect device includes a semiconductor nanosheet segment above a substrate, and a T-shaped inner spacer on the semiconductor nanosheet segment. The field effect device further includes a gate dielectric layer on the semiconductor nanosheet segment, and a first work function material plug on the gate dielectric layer. The field effect device further includes a second work function material layer on the first work function material plug and a center portion of the gate dielectric layer, wherein the second work function material layer is a different work function material from the first work function material plug.



[[Category:H01L29/66]]
[[Category:H01L29/06]]
[[Category:H01L29/423]]
[[Category:H01L27/088]]
[[Category:H01L21/02]]
[[Category:H01L21/8234]]