View source for 17550724. SEMICONDUCTOR STRUCTURES WITH WRAP-AROUND CONTACT STRUCTURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

=SEMICONDUCTOR STRUCTURES WITH WRAP-AROUND CONTACT STRUCTURE=


==Organization Name==

[[:Category:INTERNATIONAL BUSINESS MACHINES CORPORATION|INTERNATIONAL BUSINESS MACHINES CORPORATION]]


[[Category:INTERNATIONAL BUSINESS MACHINES CORPORATION]]

==Inventor(s)==

[[:Category:Ruilong Xie of Niskayuna NY (US)|Ruilong Xie of Niskayuna NY (US)]][[Category:Ruilong Xie of Niskayuna NY (US)]]

[[:Category:Jingyun Zhang of Albany NY (US)|Jingyun Zhang of Albany NY (US)]][[Category:Jingyun Zhang of Albany NY (US)]]

[[:Category:Reinaldo Vega of Mahopac NY (US)|Reinaldo Vega of Mahopac NY (US)]][[Category:Reinaldo Vega of Mahopac NY (US)]]

[[:Category:Alexander Reznicek of Troy NY (US)|Alexander Reznicek of Troy NY (US)]][[Category:Alexander Reznicek of Troy NY (US)]]

==SEMICONDUCTOR STRUCTURES WITH WRAP-AROUND CONTACT STRUCTURE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17550724 titled 'SEMICONDUCTOR STRUCTURES WITH WRAP-AROUND CONTACT STRUCTURE

==Simplified Explanation==

The abstract describes a semiconductor structure with a recessed portion in the source/drain region and a metal contact with two portions. The first portion of the metal contact has a smaller width than the second portion, and at least a part of the second portion is placed in the recessed portion of the source/drain region.

* The semiconductor structure includes a source/drain region with a recessed portion.
* A metal contact is present in the structure, consisting of a first portion and a second portion.
* The first portion of the metal contact has a smaller width than the second portion.
* The second portion of the metal contact, with a greater width, is placed in the recessed portion of the source/drain region.

== Potential Applications ==
* This semiconductor structure can be used in various electronic devices that utilize semiconductors, such as integrated circuits, transistors, and microprocessors.
* It can be applied in the manufacturing of high-performance electronic devices that require efficient electrical connections.

== Problems Solved ==
* The recessed portion in the source/drain region allows for better integration and contact between the metal contact and the semiconductor structure.
* The different widths of the metal contact portions enable improved electrical conductivity and performance.

== Benefits ==
* The recessed portion enhances the electrical connection between the metal contact and the source/drain region, leading to improved device performance.
* The varying widths of the metal contact portions allow for more efficient current flow and reduced resistance.
* This semiconductor structure can contribute to the development of faster and more reliable electronic devices.


==Original Abstract Submitted==

A semiconductor structure includes a source/drain region having a recessed portion. The semiconductor structure further includes a metal contact having a first portion and a second portion. The first portion of the metal contact has a first width and the second portion of the metal contact has a second width greater than the first width. At least a portion of the second portion of the metal contact is disposed in the recessed portion of the source/drain region.



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