View source for 17545485. MAGNETIC TUNNEL JUNCTION PILLAR FORMATION FOR MRAM DEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

=MAGNETIC TUNNEL JUNCTION PILLAR FORMATION FOR MRAM DEVICE=


==Organization Name==

[[:Category:INTERNATIONAL BUSINESS MACHINES CORPORATION|INTERNATIONAL BUSINESS MACHINES CORPORATION]]


[[Category:INTERNATIONAL BUSINESS MACHINES CORPORATION]]

==Inventor(s)==

[[:Category:Heng Wu of Guilderland NY (US)|Heng Wu of Guilderland NY (US)]][[Category:Heng Wu of Guilderland NY (US)]]

[[:Category:Pouya Hashemi of Purchase NY (US)|Pouya Hashemi of Purchase NY (US)]][[Category:Pouya Hashemi of Purchase NY (US)]]

[[:Category:Ruilong Xie of Niskayuna NY (US)|Ruilong Xie of Niskayuna NY (US)]][[Category:Ruilong Xie of Niskayuna NY (US)]]

[[:Category:Julien Frougier of Albany NY (US)|Julien Frougier of Albany NY (US)]][[Category:Julien Frougier of Albany NY (US)]]

==MAGNETIC TUNNEL JUNCTION PILLAR FORMATION FOR MRAM DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17545485 titled 'MAGNETIC TUNNEL JUNCTION PILLAR FORMATION FOR MRAM DEVICE

==Simplified Explanation==

The abstract describes a method of manufacturing a magnetic random access memory (MRAM) device. Here is a simplified explanation of the patent application:

* The method begins by forming a magnetic tunnel junction (MTJ) stack on a substrate.
* A hardmask layer is then formed on top of the MTJ stack.
* Etch pattern pads are created on the hardmask layer.
* Spacers are formed on the sides of the etch pattern pads, creating first openings that expose the hardmask layer.
* The MTJ stack is patterned using a first etch, utilizing the first openings to form multiple MTJ pillars separated by first vias.
* The first vias are filled with a first dielectric material.
* The spacers are removed from the etch pattern pads, resulting in the formation of second openings between the first dielectric material and the etch pattern pads.
* The multiple MTJ pillars are further patterned using a second etch, utilizing the second openings to form second MTJ pillars separated by second vias.
* The second vias are filled with a second dielectric material, effectively encapsulating the multiple second MTJ pillars.

Potential applications of this technology:

* Magnetic random access memory (MRAM) devices can be used in various electronic devices, such as computers, smartphones, and IoT devices.
* MRAM offers non-volatile memory storage, high-speed read and write operations, and low power consumption, making it suitable for applications that require fast and reliable data storage.

Problems solved by this technology:

* The method provides a reliable and efficient way to manufacture MRAM devices with multiple MTJ pillars.
* The use of spacers and etch pattern pads allows for precise patterning and separation of the MTJ pillars, ensuring proper functionality of the MRAM device.

Benefits of this technology:

* The method enables the production of MRAM devices with high storage density and improved performance.
* The encapsulation of the MTJ pillars with dielectric materials enhances their stability and reliability.
* The manufacturing process is compatible with existing semiconductor fabrication techniques, making it easier to integrate MRAM technology into existing electronic devices.


==Original Abstract Submitted==

A method of manufacturing an MRAM device includes forming an MTJ stack on a substrate, forming a hardmask layer on the MTJ stack, forming etch pattern pads on the hardmask, forming a spacer on the sides of the etch pattern pads to form first openings exposing the hardmask, patterning the MTJ stack by a first etch using the first openings to form a plurality of first MTJ pillars separated by first vias, filling the first vias with a first dielectric, removing the spacers from the etch pattern pads to form a plurality of second openings between the first dielectric and the etch pattern pads, patterning the plurality of first MTJ pillars by a second etch using the second openings to form a plurality of second MTJ pillars separated by second vias and filling the second vias with a second dielectric to encapsulate the plurality of second MTJ pillars.



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