View source for 17534629. Reliability Macros for Contact Over Active Gate Layout Designs simplified abstract (International Business Machines Corporation)

=Reliability Macros for Contact Over Active Gate Layout Designs=


==Organization Name==

[[:Category:International Business Machines Corporation|International Business Machines Corporation]]


[[Category:International Business Machines Corporation]]

==Inventor(s)==

[[:Category:Huimei Zhou of Albany NY (US)|Huimei Zhou of Albany NY (US)]][[Category:Huimei Zhou of Albany NY (US)]]

[[:Category:Ruilong Xie of Niskayuna NY (US)|Ruilong Xie of Niskayuna NY (US)]][[Category:Ruilong Xie of Niskayuna NY (US)]]

[[:Category:Miaomiao Wang of Albany NY (US)|Miaomiao Wang of Albany NY (US)]][[Category:Miaomiao Wang of Albany NY (US)]]

==Reliability Macros for Contact Over Active Gate Layout Designs - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17534629 titled 'Reliability Macros for Contact Over Active Gate Layout Designs

==Simplified Explanation==

The abstract describes a patent application for reliability test macros for contact over active gate (COAG) layout designs. These macros include gate-shaped dielectric structures, source/drain regions, source/drain contacts, a dielectric fill material, and gate contacts. The dielectric fill material is present between the gate contacts and the source/drain contacts.

* Gate-shaped dielectric structures are placed over the active area of a substrate.
* Source/drain regions are located on opposite sides of the gate-shaped dielectric structures.
* Source/drain contacts are in direct contact with the source/drain regions.
* A dielectric fill material is placed on the source/drain contacts.
* Gate contacts are present over the gate-shaped dielectric structures in the active area.
* The dielectric fill material is present between the gate contacts and the source/drain contacts.

Potential applications of this technology:
* Testing the reliability of COAG layout designs in semiconductor devices.

Problems solved by this technology:
* Ensuring the reliability of COAG layout designs by providing a test macro specifically designed for this purpose.

Benefits of this technology:
* Allows for more accurate and efficient testing of COAG layout designs.
* Helps identify any potential reliability issues in COAG layout designs.
* Enables the improvement and optimization of COAG layout designs for better performance and reliability.


==Original Abstract Submitted==

Reliability test macros for contact over active gate (COAG) layout designs are provided. In one aspect, a COAG layout design reliability test macro includes: gate-shaped dielectric structures disposed over an active area of a substrate; source/drain regions present on opposite sides of the gate-shaped dielectric structures; source/drain contacts in direct contact with the source/drain regions; a dielectric fill material disposed on the source/drain contacts; and gate contacts present over, and in direct contact with, the gate-shaped dielectric structures in the active area, wherein the dielectric fill material is present in between the gate contacts and the source/drain contacts. Methods of forming and using the present COAG layout design reliability test macros are also provided.



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