View source for 17521083. Single Process Double Gate and Variable Threshold Voltage MOSFET simplified abstract (International Business Machines Corporation)

=Single Process Double Gate and Variable Threshold Voltage MOSFET=


==Organization Name==

[[:Category:International Business Machines Corporation|International Business Machines Corporation]]


[[Category:International Business Machines Corporation]]

==Inventor(s)==

[[:Category:Sung Dae Suk of Watervliet NY (US)|Sung Dae Suk of Watervliet NY (US)]][[Category:Sung Dae Suk of Watervliet NY (US)]]

[[:Category:Devendra K. Sadana of Pleasantville NY (US)|Devendra K. Sadana of Pleasantville NY (US)]][[Category:Devendra K. Sadana of Pleasantville NY (US)]]

[[:Category:Tze-Chiang Chen of Yorktown Heights NY (US)|Tze-Chiang Chen of Yorktown Heights NY (US)]][[Category:Tze-Chiang Chen of Yorktown Heights NY (US)]]

==Single Process Double Gate and Variable Threshold Voltage MOSFET - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17521083 titled 'Single Process Double Gate and Variable Threshold Voltage MOSFET

==Simplified Explanation==

The abstract describes a patent application for a new type of MOSFET device that includes double gate/gate-all-around and variable threshold voltage features. The device is fabricated using a single backside process.

* The MOSFET device includes a channel between source/drain regions.
* It has at least one first gate on the front side of the device, with gate spacers offsetting the source/drain regions from the first gate.
* It also has at least one second gate on the backside of the device, directly opposite the first gate.
* The device can have at least one gate contact in direct contact with both the first and second gates.
* The patent application also provides a method for forming the MOSFET device.

== Potential Applications ==
* This technology can be used in the fabrication of advanced semiconductor devices.
* It can be applied in the development of high-performance integrated circuits.
* The MOSFET device can be used in various electronic devices, such as smartphones, tablets, and computers.

== Problems Solved ==
* The invention solves the problem of limited performance and scalability of conventional MOSFET devices.
* It addresses the need for improved control over the threshold voltage of the device.
* The technology solves the challenge of fabricating double gate/gate-all-around MOSFET devices using a single backside process.

== Benefits ==
* The double gate/gate-all-around design provides enhanced control over the device's electrical characteristics.
* The variable threshold voltage feature allows for better optimization of power consumption and performance.
* The single backside process simplifies the fabrication process and reduces manufacturing costs.


==Original Abstract Submitted==

Double gate/gate-all-around and variable threshold voltage MOSFET devices and techniques for fabrication thereof in a single backside process are provided. In one aspect, a MOSFET device includes: a channel in between source/drain regions; at least one first gate disposed on a first side of the channel at a frontside of the MOSFET device; gate spacers offsetting the source/drain regions from the at least one first gate; and at least one second gate disposed on a second side of the channel directly opposite the at least one first gate at a backside of the MOSFET device. At least one gate contact can be present in direct contact with the at least one first gate and the at least one second gate. A method of forming a MOSFET device is also provided.



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