View source for 17457588. INTEGRATED INPUT OUTPUT AND LOGIC DEVICE FOR NANOSHEET TECHNOLOGY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

=INTEGRATED INPUT OUTPUT AND LOGIC DEVICE FOR NANOSHEET TECHNOLOGY=


==Organization Name==

[[:Category:INTERNATIONAL BUSINESS MACHINES CORPORATION|INTERNATIONAL BUSINESS MACHINES CORPORATION]]


[[Category:INTERNATIONAL BUSINESS MACHINES CORPORATION]]

==Inventor(s)==

[[:Category:Maruf Amin Bhuiyan of Albany NY (US)|Maruf Amin Bhuiyan of Albany NY (US)]][[Category:Maruf Amin Bhuiyan of Albany NY (US)]]

[[:Category:Ardasheir Rahman of Schenectady NY (US)|Ardasheir Rahman of Schenectady NY (US)]][[Category:Ardasheir Rahman of Schenectady NY (US)]]

[[:Category:Kevin W. Brew of Niskayuna NY (US)|Kevin W. Brew of Niskayuna NY (US)]][[Category:Kevin W. Brew of Niskayuna NY (US)]]

[[:Category:Carl Radens of LaGrangeville NY (US)|Carl Radens of LaGrangeville NY (US)]][[Category:Carl Radens of LaGrangeville NY (US)]]

==INTEGRATED INPUT OUTPUT AND LOGIC DEVICE FOR NANOSHEET TECHNOLOGY - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17457588 titled 'INTEGRATED INPUT OUTPUT AND LOGIC DEVICE FOR NANOSHEET TECHNOLOGY

==Simplified Explanation==

The patent application describes integrated input/output and logic devices for nanosheet technology and methods of fabrication for these devices. The devices use different types of transistors, such as Extended Gate (EG) Field Effect Transistors (FET) for input/output devices and Suspended Gate (SG) FETs for logic devices. By co-locating SG and EG devices on a single die, the fabricator can ensure alignment between the nanosheets used in the devices, improving consistency in device characteristics and reducing overall space requirements.

* Integrated input/output and logic devices for nanosheet technology
* Different types of transistors used for input/output and logic devices
* EG FETs used for input/output devices
* SG FETs used for logic devices
* Co-locating SG and EG devices on a single die
* Assures alignment between nanosheets used in the devices
* Improves consistency in device characteristics on a single die
* Reduces overall space requirements for hardware used by input/output and logic devices

==Potential Applications==
* Nanosheet technology in integrated circuits
* Electronic devices requiring integrated input/output and logic functionality

==Problems Solved==
* Inconsistency in device characteristics on a single die
* Space limitations for input/output and logic devices in nanosheet technology

==Benefits==
* Improved consistency in device characteristics
* Reduced space requirements for hardware


==Original Abstract Submitted==

Embodiments described herein provide for integrated input/output and logic devices for nanosheet technology and methods of fabrication for the devices. The types of transistors used for input/output devices and logic devices may differ such that, for example, input/output devices may use EG (Extended Gate) Field Effect Transistors (FET) while logic devices may use Suspended Gate (SG) FETs. Co-locating SG and EG devices on a single die provides for a fabricator to assure alignment between the nanosheets used in the SG and EG devices (improving consistency in the device characteristics on a single die) and reduce overall space requirements for the hardware used by input/output and logic devices.



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