SEARCH RESULTS for assignor:"LEI, XINJIAN"

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(X0) 15975199: Volatile Dihydropyrazinly and Dihydropyrazine Metal Complexes

(A1) 20180327900: Volatile Dihydropyrazinly and Dihydropyrazine Metal Complexes

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(X0) 15976028: Methods for Depositing Films with Organoaminodisilane Precursors

(A1) 20180294152: Methods for Depositing Films with Organoaminodisilane Precursors

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(X0) 15764751: METHODS FOR DEPOSITING A CONFORMAL METAL OR METALLOID SILICON NITRIDE FILM

(A1) 20180274097: METHODS FOR DEPOSITING A CONFORMAL METAL OR METALLOID SILICON NITRIDE FILM

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(X0) 15954906: Method and Composition for Providing Pore Sealing Layer on Porous Low Dielectric Constant Films

(A1) 20180277360: Method and Composition for Providing Pore Sealing Layer on Porous Low Dielectric Constant Films

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(X0) 15914968: Formulation for Deposition of Silicon Doped Hafnium Oxide as Ferroelectric Materials

(A1) 20180269057: Formulation for Deposition of Silicon Doped Hafnium Oxide as Ferroelectric Materials

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(X0) 15914962: Formulation for Deposition of Silicon Doped Hafnium Oxide as Ferroelectric Materials

(A1) 20180265967: Formulation for Deposition of Silicon Doped Hafnium Oxide as Ferroelectric Materials

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(X0) 15461999: Organoaminodisilane Precursors and Methods for Depositing Films Comprising Same

(A1) 20170183502: Organoaminodisilane Precursors and Methods for Depositing Films Comprising Same

(B2) 1: Organoaminodisilane Precursors and Methods for Depositing Films Comprising Same

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(X0) 15757805: METHODS FOR DEPOSITING A CONFORMAL METAL OR METALLOID SILICON NITRIDE FILM AND RESULTANT FILMS

(A1) 20180245215: METHODS FOR DEPOSITING A CONFORMAL METAL OR METALLOID SILICON NITRIDE FILM AND RESULTANT FILMS

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(X0) 15884013: Organoamino-Polysiloxanes For Deposition Of Silicon-Containing Films

(A1) 20180223428: Organoamino-Polysiloxanes For Deposition Of Silicon-Containing Films

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(X0) 15883815: Organoamino-Functionalized Linear And Cyclic Oligosiloxanes For Deposition Of Silicon-Containing Films

(A1) 20180223047: Organoamino-Functionalized Linear And Cyclic Oligosiloxanes For Deposition Of Silicon-Containing Films

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(X0) 14329323: VOLATILE DIHYDROPYRAZINLY AND DIHYDROPYRAZINE METAL COMPLEXES

(A1) 20150030782: VOLATILE DIHYDROPYRAZINLY AND DIHYDROPYRAZINE METAL COMPLEXES

(B2) 9: VOLATILE DIHYDROPYRAZINLY AND DIHYDROPYRAZINE METAL COMPLEXES

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(X0) 15459389: Methods for Depositing Films with Organoaminodisilane Precursors

(A1) 20170186605: Methods for Depositing Films with Organoaminodisilane Precursors

(B2) 9: Methods for Depositing Films with Organoaminodisilane Precursors

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(X0) 13902375: ORGANOAMINODISILANE PRECURSORS AND METHODS FOR DEPOSITING FILMS COMPRISING SAME

(A1) 20130319290: ORGANOAMINODISILANE PRECURSORS AND METHODS FOR DEPOSITING FILMS COMPRISING SAME

(B2) 9: ORGANOAMINODISILANE PRECURSORS AND METHODS FOR DEPOSITING FILMS COMPRISING SAME

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(X0) 15698794: Compositions and Methods for the Deposition of Silicon Oxide Films

(A1) 20180127592: Compositions and Methods for the Deposition of Silicon Oxide Films

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(X0) 15848270: Silicon-Based Films and Methods of Forming the Same

(A1) 20180119276: Silicon-Based Films and Methods of Forming the Same

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(X0) 15725122: Carbon Bridged Aminosilane Compounds for High Growth Rate Silicon-Containing Films

(A1) 20180105541: Carbon Bridged Aminosilane Compounds for High Growth Rate Silicon-Containing Films

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(X0) 14732250: ALKYL-ALKOXYSILACYCLIC COMPOUNDS

(A1) 20150364321: ALKYL-ALKOXYSILACYCLIC COMPOUNDS

(B2) 9: ALKYL-ALKOXYSILACYCLIC COMPOUNDS

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(X0) 15681102: Precursors and Flowable CVD Methods for Making Low-K Films to Fill Surface Features

(A1) 20180061636: Precursors and Flowable CVD Methods for Making Low-K Films to Fill Surface Features

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(X0) 14498044: Methods for Depositing Silicon Nitride Films

(A1) 20150099375: Methods for Depositing Silicon Nitride Films

(B2) 9: Methods for Depositing Silicon Nitride Films

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(X0) 15554389: PROCESS FOR DEPOSITING POROUS ORGANOSILICATE GLASS FILMS FOR USE AS RESISTIVE RANDOM ACCESS MEMORY

(A1) 20180047898: PROCESS FOR DEPOSITING POROUS ORGANOSILICATE GLASS FILMS FOR USE AS RESISTIVE RANDOM ACCESS MEMORY