SEARCH RESULTS for assignor:"LEE, CHOONGHYUN"

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(X0) 15994745: SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

(A1) 20180286862: SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

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(X0) 15468755: UNIFORM LOW-K INNER SPACER MODULE IN GATE-ALL-AROUND (GAA) TRANSISTORS

(A1) 20180277656: UNIFORM LOW-K INNER SPACER MODULE IN GATE-ALL-AROUND (GAA) TRANSISTORS

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(X0) 15424137: UNIFORM THRESHOLD VOLTAGE FOR NANOSHEET DEVICES

(A1) 20180226484: UNIFORM THRESHOLD VOLTAGE FOR NANOSHEET DEVICES

(B2) 1: UNIFORM THRESHOLD VOLTAGE FOR NANOSHEET DEVICES

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(X0) 15905885: BOTTOM CONTACT RESISTANCE REDUCTION ON VFET

(B1) 1: BOTTOM CONTACT RESISTANCE REDUCTION ON VFET

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(X0) 15279154: SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

(A1) 20180090494: SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

(B2) 1: SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

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(X0) 15958018: SIMPLIFIED GATE STACK PROCESS TO IMPROVE DUAL CHANNEL CMOS PERFORMANCE

(A1) 20180247096: SIMPLIFIED GATE STACK PROCESS TO IMPROVE DUAL CHANNEL CMOS PERFORMANCE

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(X0) 15958021: SIMPLIFIED GATE STACK PROCESS TO IMPROVE DUAL CHANNEL CMOS PERFORMANCE

(A1) 20180247097: SIMPLIFIED GATE STACK PROCESS TO IMPROVE DUAL CHANNEL CMOS PERFORMANCE

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(X0) 15788421: MULTIPLE WORK FUNCTION DEVICE USING GeOx/TiN CAP ON WORK FUNCTION SETTING METAL

(A1) 20180240865: MULTIPLE WORK FUNCTION DEVICE USING GeOx/TiN CAP ON WORK FUNCTION SETTING METAL

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(X0) 15603982: SIMPLIFIED GATE STACK PROCESS TO IMPROVE DUAL CHANNEL CMOS PERFORMANCE

(A1) 20180089479: SIMPLIFIED GATE STACK PROCESS TO IMPROVE DUAL CHANNEL CMOS PERFORMANCE

(B2) 9: SIMPLIFIED GATE STACK PROCESS TO IMPROVE DUAL CHANNEL CMOS PERFORMANCE

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(X0) 15596634: BOTTOM CONTACT RESISTANCE REDUCTION ON VFET

(B1) 9: BOTTOM CONTACT RESISTANCE REDUCTION ON VFET

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(X0) 15416566: SELF-LIMITED INNER SPACER FORMATION FOR GATE-ALL-AROUND FIELD EFFECT TRANSISTORS

(B1) 9: SELF-LIMITED INNER SPACER FORMATION FOR GATE-ALL-AROUND FIELD EFFECT TRANSISTORS

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(X0) 15279148: SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

(A1) 20180090388: SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

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(X0) 15262206: FORMATION OF PURE SILICON OXIDE INTERFACIAL LAYER ON SILICON-GERMANIUM CHANNEL FIELD EFFECT TRANSISTOR DEVICE

(A1) 20180076040: FORMATION OF PURE SILICON OXIDE INTERFACIAL LAYER ON SILICON-GERMANIUM CHANNEL FIELD EFFECT TRANSISTOR DEVICE

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(X0) 15613930: FABRICATION OF SILICON-GERMANIUM FIN STRUCTURE HAVING SILICON-RICH OUTER SURFACE

(A1) 20180026100: FABRICATION OF SILICON-GERMANIUM FIN STRUCTURE HAVING SILICON-RICH OUTER SURFACE

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(X0) 15613977: FABRICATION OF SILICON-GERMANIUM FIN STRUCTURE HAVING SILICON-RICH OUTER SURFACE

(A1) 20180026101: FABRICATION OF SILICON-GERMANIUM FIN STRUCTURE HAVING SILICON-RICH OUTER SURFACE

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(X0) 15198128: VERTICAL CMOS DEVICES WITH COMMON GATE STACKS

(A1) 20180005904: VERTICAL CMOS DEVICES WITH COMMON GATE STACKS