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Category:Ande Kitamura of Portland OR (US)
Pages in category "Ande Kitamura of Portland OR (US)"
The following 16 pages are in this category, out of 16 total.
1
- 17849207. MICROELECTRONIC DIE WITH TWO DIMENSIONAL (2D) COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICES IN AN INTERCONNECT STACK THEREOF simplified abstract (Intel Corporation)
- 17852016. 2D LAYERED GATE OXIDE simplified abstract (Intel Corporation)
- 18091192. TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DICHALCOGENIDE LAYERS OUTSIDE OF THE CHANNEL REGION simplified abstract (Intel Corporation)
- 18091201. BEOL CONTACT METALS FOR 2D TRANSISTORS simplified abstract (Intel Corporation)
- 18091206. SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS simplified abstract (Intel Corporation)
- 18091209. TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GROWTH IN SUPERLATTICE WITH NITRIDES simplified abstract (Intel Corporation)
- 18091211. 2D NANORIBBONS UTILIZING SILICON SCAFFOLDING simplified abstract (Intel Corporation)
- 18091279. PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL SYNTHESIS simplified abstract (Intel Corporation)
- 18092152. TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL SUPPORTS simplified abstract (Intel Corporation)
I
- Intel corporation (20240222113). PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL SYNTHESIS simplified abstract
- Intel corporation (20240222428). SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS simplified abstract
- Intel corporation (20240222461). BEOL CONTACT METALS FOR 2D TRANSISTORS simplified abstract
- Intel corporation (20240222482). TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DICHALCOGENIDE LAYERS OUTSIDE OF THE CHANNEL REGION simplified abstract
- Intel corporation (20240222483). 2D NANORIBBONS UTILIZING SILICON SCAFFOLDING simplified abstract
- Intel corporation (20240222484). TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL SUPPORTS simplified abstract
- Intel corporation (20240222485). TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GROWTH IN SUPERLATTICE WITH NITRIDES simplified abstract