Taiwan semiconductor manufacturing company, ltd. (20240381797). MEMORY DEVICE STRUCTURE FOR REDUCING THERMAL CROSSTALK simplified abstract
Contents
MEMORY DEVICE STRUCTURE FOR REDUCING THERMAL CROSSTALK
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Huan-Chieh Chen of Taichung (TW)
MEMORY DEVICE STRUCTURE FOR REDUCING THERMAL CROSSTALK - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240381797 titled 'MEMORY DEVICE STRUCTURE FOR REDUCING THERMAL CROSSTALK
The present disclosure pertains to an integrated chip with a first memory cell on top of a substrate, including a first data storage layer. A second memory cell is positioned adjacent to the first memory cell, with a dielectric layer laterally separating them. An air gap within the dielectric layer is laterally spaced between the first and second memory cells.
- The integrated chip features a unique design with a first memory cell and a second memory cell positioned closely together but separated by a dielectric layer with an air gap.
- The first memory cell includes a first data storage layer, contributing to the chip's storage capabilities.
- The air gap within the dielectric layer enhances the performance and efficiency of the integrated chip by providing insulation and reducing interference between the memory cells.
- This innovative design allows for compact yet efficient memory storage solutions in electronic devices.
- The integration of the air gap within the dielectric layer sets this chip apart from traditional memory cell configurations.
Potential Applications: - This technology can be applied in various electronic devices requiring memory storage, such as smartphones, tablets, and computers. - It can also be utilized in data centers and servers for high-performance computing applications.
Problems Solved: - The integrated chip addresses the need for efficient memory storage solutions in compact electronic devices. - The design with the air gap within the dielectric layer helps reduce interference and improve overall performance.
Benefits: - Enhanced memory storage capabilities in a compact design. - Improved performance and efficiency due to the innovative air gap feature. - Versatile applications in a wide range of electronic devices.
Commercial Applications: - The integrated chip can be commercialized for use in consumer electronics, data centers, and other computing applications. - It offers a competitive advantage in the market by providing efficient memory storage solutions with enhanced performance.
Questions about the technology: 1. How does the air gap within the dielectric layer contribute to the performance of the integrated chip? 2. What sets this integrated chip design apart from traditional memory cell configurations?
Original Abstract Submitted
the present disclosure is directed towards an integrated chip including a first memory cell overlying a substrate. the first memory cell comprises a first data storage layer. a second memory cell is adjacent to the first memory cell. a dielectric layer is disposed laterally between the first memory cell and the second memory cell. an air gap is disposed within the dielectric layer. the air gap is spaced laterally between the first memory cell and the second memory cell.
