View source for Taiwan semiconductor manufacturing company, ltd. (20240381793). OXYGEN AFFINITY LAYER TO IMPROVE RRAM CELL PERFORMANCE simplified abstract

=OXYGEN AFFINITY LAYER TO IMPROVE RRAM CELL PERFORMANCE=


==Organization Name==

[[:Category:taiwan semiconductor manufacturing company, ltd.|taiwan semiconductor manufacturing company, ltd.]]


[[Category:taiwan semiconductor manufacturing company, ltd.]]

==Inventor(s)==

[[:Category:Fa-Shen Jiang of Taoyuan City (TW)|Fa-Shen Jiang of Taoyuan City (TW)]][[Category:Fa-Shen Jiang of Taoyuan City (TW)]]

[[:Category:Hai-Dang Trinh of Hsinchu (TW)|Hai-Dang Trinh of Hsinchu (TW)]][[Category:Hai-Dang Trinh of Hsinchu (TW)]]

[[:Category:Cheng-Yuan Tsai of Chu-Pei City (TW)|Cheng-Yuan Tsai of Chu-Pei City (TW)]][[Category:Cheng-Yuan Tsai of Chu-Pei City (TW)]]

[[:Category:Chung-Yi Yu of Hsin-Chu (TW)|Chung-Yi Yu of Hsin-Chu (TW)]][[Category:Chung-Yi Yu of Hsin-Chu (TW)]]

==OXYGEN AFFINITY LAYER TO IMPROVE RRAM CELL PERFORMANCE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240381793 titled 'OXYGEN AFFINITY LAYER TO IMPROVE RRAM CELL PERFORMANCE

The integrated chip described in the patent application includes a bottom electrode, a top electrode, a capping structure, and a switching structure.

* The bottom electrode is positioned over a substrate.
* The top electrode is located above the bottom electrode.
* The capping structure, situated between the top electrode and the bottom electrode, consists of a diffusion barrier layer stacked with a metal layer.
* The switching structure, positioned between the bottom electrode and the capping structure, comprises a dielectric layer and a first oxygen affinity layer.
* The first oxygen affinity layer has a lower Gibbs free energy than the dielectric layer, with a difference of less than -100 kJ/mol.

Potential Applications:
- Memory devices
- Semiconductor devices
- Integrated circuits

Problems Solved:
- Enhancing performance of integrated chips
- Improving reliability of memory devices

Benefits:
- Increased efficiency
- Enhanced durability
- Improved functionality

Commercial Applications:
Title: Advanced Integrated Chips for Memory Devices
This technology can be utilized in the production of high-performance memory devices, leading to improved data storage capabilities and faster processing speeds. The market implications include increased demand for advanced semiconductor components in various industries such as consumer electronics, telecommunications, and automotive.

Questions about the technology:
1. How does the capping structure contribute to the overall performance of the integrated chip?
The capping structure, consisting of a diffusion barrier layer and a metal layer, helps to protect the underlying layers and improve the reliability of the chip.
2. What are the potential challenges in implementing the switching structure with different Gibbs free energies in practical applications?
The main challenge lies in optimizing the materials and manufacturing processes to ensure consistent performance and reliability in real-world scenarios.


==Original Abstract Submitted==

various embodiments of the present disclosure are directed towards an integrated chip including a bottom electrode over a substrate. a top electrode overlies the bottom electrode. a capping structure is disposed between the top electrode and the bottom electrode. the capping structure comprises a diffusion barrier layer vertically stacked with a metal layer. a switching structure is disposed between the bottom electrode and the capping structure. the switching structure comprises a dielectric layer on the bottom electrode and a first oxygen affinity layer on the dielectric layer. a first gibbs free energy of the first oxygen affinity layer is less than a second gibbs free energy of the dielectric layer. a first difference between the first gibbs free energy and the second gibbs free energy is less than −100 kj/mol.



[[Category:H10N70/20]]
[[Category:H10B63/00]]
[[Category:H10N70/00]]
[[Category:CPC_H10N70/24]]