Taiwan semiconductor manufacturing company, ltd. (20240381786). MAGNETIC TUNNEL JUNCTION DEVICES simplified abstract
Contents
MAGNETIC TUNNEL JUNCTION DEVICES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
An-Shen Chang of Jubei City (TW)
Han-Ting Tsai of Kaoshiung (TW)
MAGNETIC TUNNEL JUNCTION DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240381786 titled 'MAGNETIC TUNNEL JUNCTION DEVICES
The abstract describes a device that includes a magnetoresistive random access memory (MRAM) array with MRAM cells arranged in rows and columns. Specifically, a first column of the columns includes first bottom electrodes, first magnetic tunnel junction (MTJ) stacks, first shared electrodes, second bottom electrodes, second MTJ stacks, second shared electrodes, and a bit line connected to the first and second shared electrodes.
- MRAM array with MRAM cells arranged in rows and columns
- First column includes first bottom electrodes, first MTJ stacks, and first shared electrodes
- Second column includes second bottom electrodes, second MTJ stacks, and second shared electrodes
- Bit line connected to the first and second shared electrodes
Potential Applications: - Data storage in electronic devices - High-speed computing applications - Embedded systems in IoT devices
Problems Solved: - Faster data access and storage - Reduced power consumption - Increased reliability and durability of memory storage
Benefits: - Improved performance in electronic devices - Enhanced data security - Energy-efficient memory storage
Commercial Applications: Title: "Next-Generation MRAM Technology for Enhanced Data Storage" This technology can be used in smartphones, laptops, servers, and other electronic devices to improve data storage and processing speed, leading to better user experience and increased efficiency in various industries.
Questions about MRAM Technology: 1. How does MRAM technology compare to traditional RAM in terms of performance and energy efficiency? MRAM technology offers faster performance and lower power consumption compared to traditional RAM, making it ideal for applications requiring high-speed data access and storage. 2. What are the potential challenges in implementing MRAM technology on a larger scale in commercial products? Implementing MRAM technology on a larger scale in commercial products may face challenges related to cost, compatibility with existing systems, and manufacturing processes.
Original Abstract Submitted
in an embodiment, a device includes: a magnetoresistive random access memory (mram) array including mram cells arranged in rows and columns, where a first column of the columns includes: first bottom electrodes arranged along the first column; first magnetic tunnel junction (mtj) stacks over the first bottom electrodes; a first shared electrode over each of the first mtj stacks; second bottom electrodes arranged along the first column; second mtj stacks over the second bottom electrodes; a second shared electrode over each of the second mtj stacks; and a bit line electrically connected to the first shared electrode and the second shared electrode.
