Taiwan semiconductor manufacturing company, ltd. (20240324474). RESISTIVE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
Contents
RESISTIVE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Yun-Sheng Chen of Hsinchu (TW)
Jonathan Tsung-Yung Chang of Hsinchu (TW)
Chrong-Jung Lin of Hsinchu (TW)
RESISTIVE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324474 titled 'RESISTIVE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
The abstract of a patent application describes a resistive memory device with a bottom electrode, a top electrode, and a resistance changing element. The top electrode is positioned above and spaced apart from the bottom electrode, with a downward protrusion aligned with the bottom electrode. The resistance changing element covers the side and bottom surfaces of the downward protrusion.
- The resistive memory device includes a unique design with a downward protrusion on the top electrode aligned with the bottom electrode.
- The resistance changing element covers the side and bottom surfaces of the downward protrusion, enhancing the device's performance.
- This design allows for efficient resistance changing in the memory device, improving its overall functionality.
- The device's structure enables precise control over resistance levels, leading to enhanced memory storage capabilities.
- The resistive memory device offers potential advancements in data storage technology, with improved reliability and performance.
Potential Applications: - Data storage devices - Embedded systems - Internet of Things (IoT) devices
Problems Solved: - Enhanced resistance changing capabilities - Improved memory storage efficiency
Benefits: - Increased data storage capacity - Enhanced reliability and performance - Precise control over resistance levels
Commercial Applications: Title: Advanced Resistive Memory Devices for Next-Generation Data Storage This technology could be utilized in various commercial applications such as: - Consumer electronics - Cloud computing servers - Industrial automation systems
Questions about Resistive Memory Devices: 1. How does the unique design of the resistive memory device improve its performance? The unique design with a downward protrusion on the top electrode allows for precise control over resistance levels, enhancing the device's performance. 2. What potential applications could benefit from the use of resistive memory devices? Potential applications include data storage devices, embedded systems, and IoT devices.
Original Abstract Submitted
a resistive memory device includes a bottom electrode, a top electrode and a resistance changing element. the top electrode is disposed above and spaced apart from the bottom electrode, and has a downward protrusion aligned with the bottom electrode. the resistance changing element covers side and bottom surfaces of the downward protrusion.
- Taiwan semiconductor manufacturing company, ltd.
- Yu-Der Chih of Hsinchu (TW)
- Wen-Zhang Lin of Hsinchu (TW)
- Yun-Sheng Chen of Hsinchu (TW)
- Jonathan Tsung-Yung Chang of Hsinchu (TW)
- Chrong-Jung Lin of Hsinchu (TW)
- Ya-Chin King of Hsinchu (TW)
- Cheng-Jun Lin of Hsinchu (TW)
- Wang-Yi Lee of Hsinchu (TW)
- H10N70/00
- H10B63/00
- CPC H10N70/021