Taiwan semiconductor manufacturing company, ltd. (20240237357). NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE simplified abstract

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NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Jheng-Hong Jiang of Hsinchu City (TW)

Cheung Cheng of Hsinchu City (TW)

Chia-Wei Liu of Zhubei City (TW)

NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240237357 titled 'NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE

The memory device described in the patent application consists of various materials and conductors arranged in a specific configuration to store and retrieve data efficiently.

  • The device includes a first conductor running parallel to a first axis, with selector materials and variable resistive materials positioned along the sidewall of the conductor.
  • A second conductor runs parallel to a second axis perpendicular to the first axis, completing the circuit for data storage and retrieval.
  • The arrangement of the materials along different axes allows for precise control and manipulation of data within the memory device.
  • This innovative design enhances the performance and efficiency of the memory device, making it a valuable technology in the field of data storage.

Potential Applications: This technology can be applied in various electronic devices such as computers, smartphones, and servers to improve memory storage capabilities. It can also be used in data centers and cloud computing systems to enhance data processing and retrieval speeds.

Problems Solved: The technology addresses the need for faster and more efficient memory devices in the ever-evolving digital landscape. It solves the problem of limited storage capacity and slow data access in traditional memory devices.

Benefits: Improved data storage and retrieval speeds Enhanced memory capacity Increased efficiency in electronic devices

Commercial Applications: Title: Advanced Memory Devices for Enhanced Data Storage This technology can be commercialized by memory device manufacturers to create high-performance products for consumer electronics and data centers. It has the potential to revolutionize the data storage industry by offering faster and more reliable memory solutions.

Prior Art: Researchers can explore prior patents related to memory devices, semiconductor materials, and data storage technologies to understand the evolution of this field.

Frequently Updated Research: Stay updated on advancements in semiconductor materials, nanotechnology, and data storage systems to enhance the performance of memory devices.

Questions about Memory Devices: 1. How does the configuration of materials along different axes improve data storage efficiency? 2. What are the potential challenges in implementing this technology in commercial memory devices?


Original Abstract Submitted

a memory device includes: a first conductor extending in parallel with a first axis; a first selector material comprising a first portion that extends along a first sidewall of the first conductor; a second selector material comprising a first portion that extends along the first sidewall of the first conductor; a first variable resistive material comprising a portion that extends along the first sidewall of the first conductor; and a second conductor extending in parallel with a second axis substantially perpendicular to the first axis, wherein the first portion of the first selector material, the first potion of the second selector material, and the portion of the first variable resistive material are arranged along a first direction in parallel with a third axis substantially perpendicular to the first axis and second axis.