Taiwan semiconductor manufacturing company, ltd. (20240112987). SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing memory device fabrication techniques in terms of cost-effectiveness?
- 1.11 What specific memory device applications could benefit the most from this technology?
- 1.12 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Fu-Ting Sung of Yangmei City (TW)
SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240112987 titled 'SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING
Simplified Explanation
The cell structure of a memory device includes an upper electrode structure separated from a metal line above the cell structure by one or more layers, including an isolation layer. The cell structure can be patterned using a metal line below it as an etch-stop layer, which may reduce the overall height of the memory structure and improve performance and reliability by reducing the likelihood of shorting between the metal line and the upper electrode structure.
- Upper electrode structure separated from metal line by layers including isolation layer
- Cell structure patterned using metal line below as etch-stop layer
- Reduces overall height of memory structure
- Improves performance and reliability by reducing likelihood of shorting
Potential Applications
This technology could be applied in various memory devices, such as DRAM, flash memory, and non-volatile memory, to enhance their performance and reliability.
Problems Solved
This technology addresses the issue of shorting between the metal line and upper electrode structure in memory devices, which can improve their overall performance and reliability.
Benefits
The benefits of this technology include reduced height of memory structures, improved performance, and increased reliability by minimizing the risk of shorting between components.
Potential Commercial Applications
This technology could be valuable in the semiconductor industry for manufacturing memory devices with enhanced performance and reliability, potentially leading to more efficient and reliable electronic devices.
Possible Prior Art
One possible prior art could be the use of silicon carbide layers as etch-stop layers in memory device fabrication processes to prevent shorting between components.
Unanswered Questions
How does this technology compare to existing memory device fabrication techniques in terms of cost-effectiveness?
Answer: The article does not provide information on the cost-effectiveness of this technology compared to existing techniques.
What specific memory device applications could benefit the most from this technology?
Answer: The article does not specify which types of memory devices could benefit the most from this technology.
Original Abstract Submitted
a cell structure of a memory device includes an upper electrode structure separated from a metal line above the cell structure by a combination of one or more layers including an isolation layer. the cell structure may be patterned using a metal line below the cell structure as an etch-stop layer. relative to other techniques that include patterning the cell structure using a silicon carbide layer located over the metal line below the cell structure as an etch-stop layer, the techniques described herein may reduce an overall height of the memory structure. additionally, or alternatively, the techniques may maintain or increase an isolation distance between the metal line above the cell structure and the upper electrode structure. in this way, a likelihood of shorting between the metal line above the cell structure and the upper electrode structure is reduced to improve a performance and/or a reliability of the memory device.