Taiwan semiconductor manufacturing company, ltd. (20240120391). SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chun-Yuan Chen of Hsinchu (TW)
Huan-Chieh Su of Changhua (TW)
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120391 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Simplified Explanation
The semiconductor device structure described in the abstract includes a unique configuration of source/drain regions, dielectric material, conductive contacts, and conductive features to improve device performance.
- The structure includes a first source/drain region under a well portion, a second source/drain region adjacent to the first region, and a dielectric material between them.
- A conductive contact is present with a portion under the first source/drain region and another portion adjacent to it, extending into the dielectric material.
- A conductive feature within the dielectric material is electrically connected to the conductive contact and has a top surface that is coplanar with the well portion.
Potential Applications
This technology could be applied in the development of advanced semiconductor devices for various electronic applications, such as mobile devices, computers, and automotive systems.
Problems Solved
This innovation helps in improving the performance and efficiency of semiconductor devices by optimizing the configuration of source/drain regions, conductive contacts, and features within the device structure.
Benefits
The benefits of this technology include enhanced device performance, increased efficiency, and potentially reduced power consumption in semiconductor devices.
Potential Commercial Applications
The commercial applications of this technology could be in the semiconductor industry for manufacturing high-performance electronic devices with improved functionality and reliability.
Possible Prior Art
One possible prior art could be the use of similar configurations of source/drain regions, dielectric materials, and conductive features in semiconductor device structures for enhancing device performance.
Unanswered Questions
How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor device structures to evaluate the performance and efficiency improvements offered by the described technology.
What are the specific manufacturing processes involved in forming the semiconductor device structure described in the patent application?
The article does not detail the specific manufacturing processes or techniques used to fabricate the semiconductor device structure outlined in the patent application.
Original Abstract Submitted
embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. the structure includes a first source/drain region disposed under a well portion, a second source/drain region disposed adjacent the first source/drain region, a dielectric material disposed between the first and second source/drain regions, and a conductive contact having a first portion disposed under the first source/drain region and a second portion disposed adjacent the first source/drain region. the second portion is disposed in the dielectric material. the structure further includes a conductive feature disposed in the dielectric material, and the conductive feature is electrically connected to the conductive contact. the conductive feature has a top surface that is substantially coplanar with a top surface of the well portion.
