Taiwan semiconductor manufacturing co., ltd. (20240315152). MEMORY DEVICES simplified abstract
Contents
- 1 MEMORY DEVICES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY DEVICES - A simplified explanation of the abstract
- 1.4 Potential Applications
- 1.5 Problems Solved
- 1.6 Benefits
- 1.7 Commercial Applications
- 1.8 Prior Art
- 1.9 Frequently Updated Research
- 1.10 Questions about Memory Device Formation
- 1.11 Original Abstract Submitted
MEMORY DEVICES
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Hung-Li Chiang of Taipei City (TW)
Jer-Fu Wang of Taipei City (TW)
Chao-Ching Cheng of Hsinchu City (TW)
Tzu-Chiang Chen of Hsinchu City (TW)
MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240315152 titled 'MEMORY DEVICES
The method described in the abstract involves forming a memory device by transforming a portion of a conductive plug into a buffer layer, capping the remaining portion of the plug, and then sequentially forming a phase change layer and a top electrode over the buffer layer. A second dielectric layer is then formed to encapsulate the top electrode and the phase change layer, followed by the formation of a second conductive plug in physical contact with the top electrode, and a filamentary bottom electrode within the buffer layer.
- Formation of a memory device with a unique structure involving a buffer layer, phase change layer, and top and bottom electrodes.
- Sequential formation of layers to encapsulate and protect the components of the memory device.
- Utilization of a treating process to transform a conductive plug into a buffer layer, enhancing the device's performance.
- Physical contact between the top electrode and the second conductive plug for efficient data transfer.
- Overall design aimed at improving the functionality and reliability of the memory device.
Potential Applications
The technology described in the patent application could be applied in various electronic devices requiring non-volatile memory, such as smartphones, tablets, and computers. It could also be used in industrial applications where reliable and high-performance memory devices are needed.
Problems Solved
This technology addresses the need for memory devices with improved performance, reliability, and data retention capabilities. By incorporating a unique buffer layer and sequential layer formation, the memory device can operate more efficiently and withstand harsh environmental conditions.
Benefits
The benefits of this technology include enhanced memory device performance, increased data storage capacity, improved reliability, and extended lifespan. The unique design also allows for faster data transfer speeds and lower power consumption.
Commercial Applications
The technology has potential commercial applications in the consumer electronics industry, data storage sector, and industrial automation field. It could be integrated into various products to enhance their memory capabilities and overall performance, leading to increased market competitiveness and customer satisfaction.
Prior Art
Readers interested in exploring prior art related to this technology can start by researching patents and publications in the field of memory devices, phase change materials, and semiconductor manufacturing processes.
Frequently Updated Research
Researchers and industry professionals may find it beneficial to stay updated on advancements in phase change memory technology, materials science, and semiconductor device fabrication techniques to further enhance the performance and applications of similar memory devices.
Questions about Memory Device Formation
How does the transformation of a conductive plug into a buffer layer improve the memory device's performance?
The transformation process enhances the device's reliability and data retention capabilities by providing a protective buffer layer that helps stabilize the phase change layer and electrodes.
What are the potential challenges in forming a memory device with multiple layers and electrodes?
Challenges may include ensuring proper alignment and adhesion between the layers, controlling the thickness and uniformity of each layer, and optimizing the manufacturing process for consistent device performance.
Original Abstract Submitted
a method of forming a memory device includes the following operations. a first conductive plug is formed within a first dielectric layer over a substrate. a treating process is performed to transform a portion of the first conductive plug into a buffer layer, and the buffer layer caps the remaining portion of the first conductive plug. a phase change layer and a top electrode are sequentially formed over the buffer layer. a second dielectric layer is formed to encapsulate the top electrode and the underlying phase change layer. a second conductive plug is formed within the second dielectric layer and in physical contact with the top electrode. a filamentary bottom electrode is formed within the buffer layer.
