Taiwan semiconductor manufacturing co., ltd. (20240161798). SIGNAL GENERATOR FOR CONTROLLING TIMING OF SIGNAL IN MEMORY DEVICE simplified abstract

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SIGNAL GENERATOR FOR CONTROLLING TIMING OF SIGNAL IN MEMORY DEVICE

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Xiu-Li Yang of Shanghai City (CN)

He-Zhou Wan of Shanghai City (CN)

Mu-Yang Ye of Nanjing City (CN)

Lu-Ping Kong of Nanjing City (CN)

Ming-Hung Chang of Tainan City (TW)

SIGNAL GENERATOR FOR CONTROLLING TIMING OF SIGNAL IN MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240161798 titled 'SIGNAL GENERATOR FOR CONTROLLING TIMING OF SIGNAL IN MEMORY DEVICE

Simplified Explanation

The abstract describes a patent application for a device that includes a memory array, bit line pairs, word lines, a modulation circuit, and a control signal generator. The control signal generator is configured to produce a control signal that switches to a first voltage level for a specific time duration in reference to the tracking length of the tracking wiring, for controlling the modulation circuit.

  • Memory array with bit cells arranged in rows and columns
  • Bit line pairs connected to columns of bit cells
  • Word lines connected to rows of bit cells
  • Modulation circuit coupled with at least one bit line pair
  • Control signal generator with tracking wiring positively correlated with depth distance of word lines
  • Control signal generator produces control signal switching to first voltage level for specific time duration

Potential Applications

This technology could be applied in:

  • Memory devices
  • Data storage systems
  • Integrated circuits

Problems Solved

This technology helps in:

  • Efficient modulation of memory cells
  • Precise control of voltage levels
  • Enhanced performance of memory arrays

Benefits

The benefits of this technology include:

  • Improved data storage capabilities
  • Higher speed and efficiency in memory operations
  • Enhanced reliability and durability of memory devices

Potential Commercial Applications

The potential commercial applications of this technology could be in:

  • Semiconductor industry
  • Electronics manufacturing
  • Memory chip production

Possible Prior Art

One possible prior art for this technology could be:

  • Modulation circuits in memory devices

What is the specific design of the modulation circuit in this device?

The specific design of the modulation circuit includes a connection with at least one bit line pair and the ability to modulate the voltage levels of the connected bit line pair.

How does the tracking wiring in the control signal generator positively correlate with the depth distance of the word lines?

The tracking wiring in the control signal generator is designed to have a length that is directly proportional to the depth distance of the word lines, ensuring accurate control signals for the modulation circuit based on the specific depth of the word lines.


Original Abstract Submitted

a device includes a memory array, bit line pairs, word lines, a modulation circuit and a control signal generator. the memory array has bit cells arranged in rows and columns. each bit line pair is connected to a respective column of bit cells. each word line is connected to a respective row of bit cells. the modulation circuit is coupled with at least one bit line pair. the control signal generator is coupled with the modulation circuit. the control signal generator includes a tracking wiring with a tracking length positively correlated with a depth distance of the word lines. the control signal generator is configured to produce a control signal, switching to a first voltage level for a first time duration in reference with the tracking length, for controlling the modulation circuit. a method of controlling aforesaid device is also disclosed.