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• Nanoelectronics Patent Application Trends 2024
  == Nanoelectronics Patent Application Filing Activity == == Nanoelectronics patent applications in 2024 == ...
  4 KB (412 words) - 16:06, 17 July 2024

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• Nanoelectronics Patent Application Trends 2024
  == Nanoelectronics Patent Application Filing Activity == == Nanoelectronics patent applications in 2024 == ...
  4 KB (412 words) - 16:06, 17 July 2024
• 18554168. SEMICONDUCTOR DEVICE AND METHODS FOR FABRICATING AND OPERATING THE DEVICE simplified abstract (Microsoft Technology Licensing, LLC)
  * Nanoelectronics ===Nanoelectronics Innovation for Enhanced Device Performance=== ...
  5 KB (628 words) - 16:27, 6 July 2024
• 18418678. Gate Structures in Transistors and Method of Forming Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
  === What are the potential implications of this technology in the field of nanoelectronics? === ...the patent application could have significant implications in the field of nanoelectronics by enabling the development of more efficient and high-performance electron ...
  5 KB (643 words) - 07:12, 24 May 2024
• 18510402. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBON CHANNEL STRUCTURES simplified abstract (Intel Corporation)
  * Nanoelectronics * Increased functionality of nanoelectronics ...
  4 KB (575 words) - 16:28, 17 March 2024
• Intel corporation (20240355682). EXTENSION OF NANOCOMB TRANSISTOR ARRANGEMENTS TO IMPLEMENT GATE ALL AROUND simplified abstract
  2. Nanoelectronics ...ogy may explore research papers, patents, and publications in the field of nanoelectronics, semiconductor devices, and transistor architectures. ...
  4 KB (567 words) - 05:50, 25 October 2024
• Intel corporation (20240222376). TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN CHANNEL DIMENSIONS simplified abstract
  - Nanoelectronics - Nanoelectronics industry ...
  4 KB (615 words) - 05:39, 4 July 2024
• 18091714. TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN CHANNEL DIMENSIONS simplified abstract (Intel Corporation)
  * Nanoelectronics * Nanoelectronics manufacturing ...
  4 KB (615 words) - 06:36, 6 July 2024
• International business machines corporation (20240232674). ISOLATED BOTTOM CORNER GATES FOR SPIN-QUBITS IN A FIN simplified abstract
  - Nanoelectronics ...pdated on advancements in semiconductor technology, quantum computing, and nanoelectronics to see how this innovation progresses. ...
  3 KB (516 words) - 07:12, 11 July 2024
• 18513028. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CHANNEL STRUCTURES USING SELECTIVE BOTTOM-UP APPROACH simplified abstract (Intel Corporation)
  The technology can be applied in advanced semiconductor devices, nanoelectronics, and integrated circuits. * Improving the efficiency of nanoelectronics ...
  4 KB (456 words) - 16:28, 17 March 2024
• Intel corporation (20240347618). SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH IMPROVED CAP simplified abstract
  - Nanoelectronics ...implications include increased demand for high-performance electronics and nanoelectronics. ...
  4 KB (588 words) - 00:36, 18 October 2024
• Taiwan semiconductor manufacturing company, ltd. (20240379800). NANO TRANSISTORS WITH SOURCE/DRAIN HAVING SIDE CONTACTS TO 2-D MATERIAL simplified abstract
  - Nanoelectronics Ongoing research in the field of nanoelectronics and semiconductor materials could provide valuable insights into the furthe ...
  4 KB (542 words) - 01:49, 25 November 2024
• Micron technology, inc. (20240224825). LOW RESISTANCE CROSSPOINT ARCHITECTURE simplified abstract
  - Nanoelectronics ...be utilized in the production of memory devices, integrated circuits, and nanoelectronics, leading to improved performance and efficiency in various electronic appli ...
  4 KB (605 words) - 17:37, 4 July 2024
• 18366864. SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
  * Nanoelectronics: The ability to create fins with different materials and widths can be util ...y can be applied to various fields, including semiconductor manufacturing, nanoelectronics, and energy storage, providing versatility in its potential applications. ...
  4 KB (635 words) - 12:40, 14 December 2023
• 18462534. STACKED MULTI-GATE DEVICE WITH BARRIER LAYERS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
  - Nanoelectronics ...iency of semiconductor devices. Stay updated on the latest advancements in nanoelectronics and semiconductor technology. ...
  4 KB (568 words) - 02:13, 1 October 2024
• Intel corporation (20240290788). METAL GATE FABRICATION FOR NANORIBBON-BASED TRANSISTORS simplified abstract
  - Nanoelectronics ...conductor industry. The method could be valuable for companies involved in nanoelectronics, IC fabrication, and semiconductor research. ...
  5 KB (687 words) - 07:37, 29 August 2024
• 18186227. FLEXIBLE SELF-ALIGNED POWER VIA SHAPE WITH GATE CUT FIRST simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
  - Nanoelectronics research ...onal transistor designs, making it a promising advancement in the field of nanoelectronics. ...
  4 KB (620 words) - 02:05, 1 October 2024
• Taiwan semiconductor manufacturing company, ltd. (20240105813). Tuning Threshold Voltage in Field-Effect Transistors simplified abstract
  * Nanoelectronics * Increasing functionality of nanoelectronics ...
  4 KB (595 words) - 04:51, 11 April 2024
• International business machines corporation (20240222448). MIDDLE OF THE LINE ARCHITECTURE WITH SUBTRACTIVE SOURCE/DRAIN CONTACT simplified abstract
  - Nanoelectronics research - Enhanced functionality in nanoelectronics ...
  5 KB (640 words) - 16:53, 4 July 2024
• 18401780. Ion Implantation For Nano-FET simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
  * Nanoelectronics * Research and development of nanoelectronics ...
  4 KB (513 words) - 06:21, 8 May 2024
• 17958290. WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS simplified abstract (Intel Corporation)
  * Nanoelectronics * Enhanced functionality in nanoelectronics ...
  4 KB (625 words) - 07:34, 12 April 2024