View source for Sk hynix inc. (20240341206). SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract

=SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME=


==Organization Name==

[[:Category:sk hynix inc.|sk hynix inc.]]


[[Category:sk hynix inc.]]

==Inventor(s)==

[[:Category:Tae Jung Ha of Icheon-si (KR)|Tae Jung Ha of Icheon-si (KR)]][[Category:Tae Jung Ha of Icheon-si (KR)]]

==SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240341206 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

'''Simplified Explanation:'''
The patent application describes semiconductor devices with memory cells that have a resistive layer, a selector layer, and a memory layer for data storage.

* The memory cells consist of a resistive layer with specific resistance, a selector layer for threshold switching, and a memory layer for data storage.
* The resistive layer has a lower portion and an upper portion, with the upper portion wider than the lower portion.
* The selector layer controls the conductive states based on applied voltage relative to a threshold voltage.
* The memory layer stores data in the semiconductor device.

'''Key Features and Innovation:'''
* Memory cells with resistive, selector, and memory layers.
* Different conductive states controlled by the selector layer.
* Data storage capability in the memory layer.

'''Potential Applications:'''
* Memory storage devices.
* Computing systems.
* Data processing applications.

'''Problems Solved:'''
* Efficient data storage.
* Controlled conductive states.
* Improved memory cell performance.

'''Benefits:'''
* Enhanced data storage capacity.
* Reliable data processing.
* Efficient memory cell operation.

'''Commercial Applications:'''
Potential commercial applications include:
* Memory chips for electronic devices.
* Data storage solutions for servers.
* Computing systems requiring high-speed data processing.

'''Prior Art:'''
Readers can explore prior art related to resistive memory cells, selector layers, and memory storage devices in semiconductor technology.

'''Frequently Updated Research:'''
Stay updated on advancements in resistive memory technology, selector layer innovations, and data storage solutions in semiconductor devices.

'''Questions about Semiconductor Devices:'''
1. What are the key components of a memory cell in a semiconductor device?
2. How does the selector layer control conductive states in memory cells?


==Original Abstract Submitted==

semiconductor devices and fabrication methods of semiconductor devices are disclosed. in an embodiment, a semiconductor device may include a plurality of memory cells, and each of the plurality of memory cells may include: a resistive layer including a material having a specific resistance and including a lower portion and an upper portion disposed over the lower portion, wherein a width of the lower portion is smaller than a width of an uppermost surface of the upper portion; a selector layer disposed over the resistive layer and structured to perform a threshold switching by exhibiting different electrically conductive states in response to an applied voltage relative to a threshold voltage; and a memory layer disposed over the selector layer and structured to store data.



[[Category:H10N70/00]]
[[Category:H10B63/00]]
[[Category:CPC_H10N70/826]]