SELF-SELECTING MEMORY DEVICE HAVING POLARITY DEPENDENT THRESHOLD VOLTAGE SHIFT CHARACTERISTICS AND MEMORY APPARATUS INCLUDING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Kiyeon Yang of Suwon-si (KR)

Donggeon Gu of Hwaseong-si (KR)

Bonwon Koo of Suwon-si (KR)

Jeonghee Park of Hwaseong-si (KR)

Hajun Sung of Suwon-si (KR)

Dongho Ahn of Hwaseong-si (KR)

Zhe Wu of Hwaseong-si (KR)

Changseung Lee of Suwon-si (KR)

Minwoo Choi of Suwon-si (KR)

SELF-SELECTING MEMORY DEVICE HAVING POLARITY DEPENDENT THRESHOLD VOLTAGE SHIFT CHARACTERISTICS AND MEMORY APPARATUS INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240324246 titled 'SELF-SELECTING MEMORY DEVICE HAVING POLARITY DEPENDENT THRESHOLD VOLTAGE SHIFT CHARACTERISTICS AND MEMORY APPARATUS INCLUDING THE SAME

The abstract describes a patent application for a self-selecting memory device with polarity-dependent threshold voltage shift characteristics and a memory apparatus incorporating this device. The memory device consists of a first electrode, a second electrode facing the first electrode, and a memory layer with ovonic threshold switching characteristics between them. The threshold voltage of the memory layer changes based on the density of active traps within the layer, with the change dependent on the polarity and intensity of the bias voltage applied. The element composition distribution within the memory layer remains constant as the threshold voltage changes.

Memory device with self-selecting properties
Polarity-dependent threshold voltage shift characteristics
Memory layer with ovonic threshold switching characteristics
Threshold voltage changes based on density of active traps
Element composition distribution remains constant

Potential Applications

The technology can be applied in various memory storage devices, such as non-volatile memory in electronic devices, data storage systems, and computing applications.

Problems Solved

The technology addresses the need for efficient and reliable memory devices with self-selecting properties that can adapt to changing threshold voltages based on bias voltage polarity and intensity.

Benefits

- Improved memory device performance - Enhanced reliability and efficiency - Adaptability to changing threshold voltages - Potential for increased data storage capacity

Commercial Applications

Title: Self-Selecting Memory Device for Enhanced Data Storage The technology can be commercialized in the semiconductor industry for the development of advanced memory storage solutions, catering to the growing demand for high-performance data storage devices in various electronic applications.

Prior Art

Prior art related to this technology can be found in research papers and patents focusing on memory devices with threshold switching characteristics and self-selecting properties.

Frequently Updated Research

Researchers are continuously exploring new materials and structures to enhance the performance and efficiency of memory devices with self-selecting properties, leading to advancements in data storage technology.

Questions about Self-Selecting Memory Device

How does the threshold voltage shift in response to changes in bias voltage polarity and intensity?

The threshold voltage of the memory layer changes as the density of active traps within the layer is altered by the applied bias voltage, with the shift dependent on both the polarity and intensity of the voltage.

What are the key benefits of using a memory device with self-selecting properties?

The main benefits include improved performance, reliability, and adaptability of the memory device, leading to enhanced data storage capabilities and efficiency.

Original Abstract Submitted

provided are a self-selecting memory device having polarity dependent threshold voltage shift characteristics and/or a memory apparatus including the self-selecting memory device. the memory device includes a first electrode, a second electrode apart from and facing the first electrode, and a memory layer between the first electrode and the second electrode. the memory layer has ovonic threshold switching characteristics and is configured to have a threshold voltage of the memory layer be changed as a density of active traps in the memory layer is changed, the threshold voltage changing according to the polarity and the intensity of a bias voltage applied to the memory layer. furthermore, an element composition distribution is configured to be maintained constant in the memory layer in response to the threshold voltage of the memory layer changing.