Samsung Electronics Co., Ltd. patent applications on July 4th, 2024
Patent Applications by Samsung Electronics Co., Ltd. on July 4th, 2024
Samsung Electronics Co., Ltd.: 234 patent applications
Samsung Electronics Co., Ltd. has applied for patents in the areas of H01L25/065 (15), H01L23/00 (14), H10B43/27 (13), H01L29/423 (11), H10B41/27 (10) H10B43/27 (4), H04N19/593 (4), H01L25/0657 (3), H10B12/315 (3), G06F3/0655 (3)
With keywords such as: device, layer, including, based, semiconductor, configured, image, data, structure, and memory in patent application abstracts.
Patent Applications by Samsung Electronics Co., Ltd.
Inventor(s): Najeong HAN of Suwon-si (KR) for samsung electronics co., ltd., Sanga Kim of Suwon-si (KR) for samsung electronics co., ltd., Yongjun Kim of Suwon-si (KR) for samsung electronics co., ltd., Namjin Cho of Suwon-si (KR) for samsung electronics co., ltd., Woogyung Cho of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A47J36/32, A23L5/10, H04L12/28
CPC Code(s): A47J36/321
Abstract: an electronic apparatus includes: a communication interface configured to perform a communication connection with an external device; a memory storing instructions; and a processor connected to the memory and configured to execute the instructions. the at least one instruction includes instructions to: receive a signal requesting a first cooking operation of a first cooking device for cooking food from a user terminal device while a food cooking image is provided to the user terminal device, in response to receiving the signal requesting the first cooking operation, identify whether a user has the first cooking device based on a list of cooking devices that the user has, and in response to identifying that the user does not have the first cooking device, transmit to the external device a signal for performing a second cooking operation that is capable of replacing the first cooking operation of the first cooking device.
20240215777. CLEANER_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Nokhaeng LEE of Suwon-si (KR) for samsung electronics co., ltd., Jeawon LEE of Suwon-si (KR) for samsung electronics co., ltd., Jeonghoon KANG of Suwon-si (KR) for samsung electronics co., ltd., Hooijoong KIM of Suwon-si (KR) for samsung electronics co., ltd., Hwagyu SONG of Suwon-si (KR) for samsung electronics co., ltd., Sungcheol LEE of Suwon-si (KR) for samsung electronics co., ltd., Jinho LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A47L5/28, A47L9/00, A47L9/12
CPC Code(s): A47L5/28
Abstract: provided is a cleaner including: a main body; and a fan motor configured to generate a suction force inside the main body, wherein the fan motor includes: a motor configured to generate a rotational force; an impeller rotatable by the motor; and a diffuser configured to guide air discharged from the impeller, and wherein the main body includes: a body including a reduction part configured to reduce a maximum flow rate while maintaining an average flow rate of air discharged from the diffuser, and a body outlet configured to guide the air passed through the reduction part; and a filter with at least a portion disposed across the body outlet to filter out rubbish from the air discharged from the body outlet.
Inventor(s): Jinhan KIM of Suwon-si (KR) for samsung electronics co., ltd., Kyonghyong KIM of Suwon-si (KR) for samsung electronics co., ltd., Jongil KIM of Suwon-si (KR) for samsung electronics co., ltd., Dukho DO of Suwon-si (KR) for samsung electronics co., ltd., Sungjin KIM of Suwon-si (KR) for samsung electronics co., ltd., Changhoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Junsik KIM of Goyang-si (KR) for samsung electronics co., ltd., Kieok KIM of Goyang-si (KR) for samsung electronics co., ltd.
IPC Code(s): A47L15/42, H04N9/31
CPC Code(s): A47L15/4293
Abstract: disclosed herein is a home appliance comprising a front panel and a display apparatus disposed to a rear of a rear side of the front panel. the display apparatus includes an image generator including a light source configured to generate a light; a lens configured to condense the light generated by the light source; and a display device configured to generate an image thereon from the condensed light, and to transmit at least a portion of the condensed light so that the image is projected downward from the image generator to a surface outside of the home appliance; and an adjustor including a lens configured to move relative to the image generator to adjust a size of an image projected downward from the image generator to the surface.
Inventor(s): Hong Soon RHEE of Suwon-si (KR) for samsung electronics co., ltd., Sang Kyu KIM of Suwon-si (KR) for samsung electronics co., ltd., So Young LEE of Suwon-si (KR) for samsung electronics co., ltd., Bok Soon KWON of Suwon-si (KR) for samsung electronics co., ltd., Sungho KIM of Suwon-si (KR) for samsung electronics co., ltd., Ho Taik LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A61B5/01, A61B5/00, G01K13/20
CPC Code(s): A61B5/01
Abstract: an electronic device for estimating human body microclimate temperature is provided. the electronic device may include: a main body; a first temperature sensor configured to measure a first temperature and a second temperature sensor configured to measure a second temperature, the first and second temperature sensors being disposed at different positions in the main body; and a processor, which while the main body is worn on a body part of a user or is carried by the user, is configured to estimate human body microclimate temperature of the user based on a difference between the first temperature and the second temperature.
Inventor(s): Taehyeon KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Donguk KWAK of Gyeonggi-do (KR) for samsung electronics co., ltd., Daehyeong LIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Daeung JEONG of Gyeonggi-do (KR) for samsung electronics co., ltd., Jeongmin PARK of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): A61B5/0225, A61B5/00, A61B5/024
CPC Code(s): A61B5/02255
Abstract: an electronic device and a method for controlling the electronic device are provided. the electronic device includes a motion sensor and optical sensors. each of the optical sensors includes a light emitter and a light receiver. the optical sensors are separately driven to determine a respective signal characteristic of each of the optical sensors. a current state of an object to be measured is determined, based on at least one signal received through the motion sensor or the optical sensors. a light emitter of at least one of the optical sensors is driven, based on the respective signal characteristics of the optical sensors according to the current state of the object to be measured. based on the respective signal characteristics of the optical sensors, a light signal sensed through a light receiver of at least one of the optical sensors is selected and received.
Inventor(s): Jiwoong HWANG of Suwon-si (KR) for samsung electronics co., ltd., Seungjoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Hoon HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A63B21/00, A63B24/00, A63B71/06
CPC Code(s): A63B21/00069
Abstract: an electronic device is provided. the electronic device includes an actuator related to a joint of a user of the electronic device, at least one sensor, memory storing one or more computer programs, and one or more processors operatively coupled to the actuator, the at least one sensor, and the memory, wherein the one or more computer programs include computer-executable instructions that, when executed by the one or more processors, cause the electronic device to adjust the strength of the rotary motion of the joint to a first strength indicated by information related to the user, use the at least one sensor to identify data representing the rotary motion of the joint after adjusting the strength of the rotary motion to the first strength, and, based on the identified data, adjust the strength of the rotary motion from the first strength to a second strength different from the first strength at least based on identifying that the rotary motion has stopped for a designated duration.
20240216858. AIR PURIFIER_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jaiyoung CHUNG of Suwon-si (KR) for samsung electronics co., ltd., Dongwook KIM of Suwon-si (KR) for samsung electronics co., ltd., Joonseon JEONG of Suwon-si (KR) for samsung electronics co., ltd., Jinkyu KANG of Suwon-si (KR) for samsung electronics co., ltd., Dongjin LEE of Suwon-si (KR) for samsung electronics co., ltd., Jaehee CHANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): B01D53/32, B01D45/08, B01D47/06, B01D50/40, B03C3/01, B03C3/08, B03C3/09, B03C3/47, B03C3/49
CPC Code(s): B01D53/323
Abstract: an air purifier includes an air inlet through which contaminated air is introduced, a plasma reaction unit connected in fluid communication with the air inlet and including a predetermined discharge region generating discharge plasma, and a dust collector that is connected in fluid communication with the plasma reaction unit and collects and removes contaminants from first purified air discharged from the plasma reaction unit.
20240217014. SOLDER PRINTING APPARATUS_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Seongchan HAN of Suwon-si (KR) for samsung electronics co., ltd., Sangmyung LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): B23K3/06, B23K3/08, H05K3/12
CPC Code(s): B23K3/0638
Abstract: a solder printing apparatus including a printed circuit board feeding unit configured to sequentially feed a plurality of printed circuit boards, a solder paste printing unit configured to locate a solder mask on each of the printed circuit boards fed by the printed circuit board feeding unit and print solder paste on each of the printed circuit boards through an opening of the solder mask, a solder mask cleaning unit configured to clean residual solder from the solder mask after the solder paste is printed by the solder paste printing unit, and a control unit configured to control the solder paste printing unit and the solder mask cleaning unit, wherein the control unit is further configured to differently set a printing parameter of the solder paste printing unit for each of the printed circuit boards according to a cleaning cycle count set for the solder mask may be provided.
Inventor(s): Donghoon Kwon of Suwon-si (KR) for samsung electronics co., ltd., Chungki Min of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): B24B37/26
CPC Code(s): B24B37/26
Abstract: the present disclosure relates to a chemical mechanical polishing apparatus and a method of replacing a polishing pad using the same. the chemical mechanical polishing apparatus includes: a polishing table; a polishing pad attachment feature on a surface of the polishing table; a polishing pad supply area outside the polishing table; and a polishing pad carrier configured to move a polishing pad from the polishing pad supply area to the polishing pad attachment feature, wherein the polishing pad attachment feature includes a magnetic feature and/or an adsorption feature to attach the polishing pad to the polishing table.
Inventor(s): WONKEUN CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): B24B37/32, B24B37/04, B24B37/26, H01L21/306
CPC Code(s): B24B37/32
Abstract: the present disclosure relates to a chemical mechanical polishing apparatus and a method of controlling the same, and the chemical mechanical polishing apparatus includes: a polishing pad having a hollow shape and including a plurality of first grooves disposed at an edge of the polishing pad and arranged in a circumferential direction; a substrate support positioned below the polishing pad and including an edge portion that adjoins the plurality of first grooves, the substrate support being configured to mount a wafer; and a slurry supplier positioned above the wafer and configured to supply slurry to the wafer.
Inventor(s): Junggap KUK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): B25J11/00, B25J9/16
CPC Code(s): B25J11/0005
Abstract: a robot is provided. the robot includes at least one sensor, a driver, memory storing one or more computer programs, and one or more processors operatively coupled with the at least one sensor, the driver, and the memory, wherein the one or more computer programs include computer-executable instructions that, when executed by the one or more processors, cause the robot to detect the occurrence of an event through the at least one sensor, identify an interaction corresponding to the event, identify user context, identify an interaction parameter based on history information stored in the memory, the interaction, and the user context, control the driver to perform the interaction based on the identified interaction parameter, obtain information on a user's response according to the performed interaction, and update the history information based on information on the identified interaction parameter and the response.
Inventor(s): Sungwoo HWANG of Suwon-si (KR) for samsung electronics co., ltd., Yong Wook KIM of Yongin-si (KR) for samsung electronics co., ltd., Soo Kyung KWON of Suwon-si (KR) for samsung electronics co., ltd., Seon-Yeong KIM of Suwon-si (KR) for samsung electronics co., ltd., Ji-Yeong KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): C09K11/88, C01G9/00, C09K11/56, B82Y20/00, B82Y30/00, B82Y40/00
CPC Code(s): C09K11/883
Abstract: a cadmium free quantum dot including a core that includes a first semiconductor nanocrystal including zinc, tellurium, and selenium, and a semiconductor nanocrystal shell that is disposed on the core and includes a zinc chalcogenide, wherein the quantum dot further includes magnesium and the mole ratio of te:se is greater than or equal to about 0.1:1 in the quantum dot; a production method thereof; and an electronic device including the same.
Inventor(s): DAESUNG CHUNG of Pohang-si (KR) for samsung electronics co., ltd., HAYOUNG JEON of Suwon-si (KR) for samsung electronics co., ltd., JI HOON CHA of Suwon-si (KR) for samsung electronics co., ltd., MINGYU JAE of Pohang-si (KR) for samsung electronics co., ltd., KYUNGHYUN KIM of Suwon-si (KR) for samsung electronics co., ltd., SUNGHOON YOO of Pohang-si (KR) for samsung electronics co., ltd.
IPC Code(s): C11D3/37, C11D3/20, C11D3/43, C11D11/00
CPC Code(s): C11D3/3746
Abstract: a semiconductor cleaning composition includes: a hydrophobic polymer, an organic acid; and a solvent, wherein the hydrophobic polymer includes a first allotrope and a second allotrope, wherein the first allotrope is nonpolar, wherein the second allotrope is polar, and wherein the second allotrope is about 5% to about 20% of the hydrophobic polymer.
Inventor(s): DONG-GU KIM of Suwon-si (KR) for samsung electronics co., ltd., GIDUCK KWEON of Suwon-si (KR) for samsung electronics co., ltd., IN-YOUNG KIM of Suwon-si (KR) for samsung electronics co., ltd., DONGHYUN JANG of Suwon-si (KR) for samsung electronics co., ltd., SUNG-WOO JEON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): C23C16/455, C23C16/458, H01L21/768
CPC Code(s): C23C16/45557
Abstract: disclosed are substrate degassing methods and semiconductor fabrication methods using the same. the substrate degassing method comprises operating a vacuum pump associated with a process chamber to remove gas from the process chamber, preparing a substrate in the process chamber, blocking introduction of gas into the process chamber, and repeatedly opening and closing a pump valve at least two times. the pump valve inhibits the vacuum pump from removing gas from the process chamber when closed and permits the vacuum pump to remove gas from the process chamber when opened. the step of closing the pump valve is performed for a first time period. the step of opening the pump valve is performed for a second time period. the first time period is greater than the second time period.
20240218561. THIN-FILM DEPOSITION APPARATUS_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Janghwi Lee of Suwon-si (KR) for samsung electronics co., ltd., Yeontae Kim of Suwon-si (KR) for samsung electronics co., ltd., Junbum Park of Suwon-si (KR) for samsung electronics co., ltd., Hunyong Park of Suwon-si (KR) for samsung electronics co., ltd., Suhwan Park of Suwon-si (KR) for samsung electronics co., ltd., Sangwoo Bae of Suwon-si (KR) for samsung electronics co., ltd., Motoshi Sakai of Suwon-si (KR) for samsung electronics co., ltd., Wondon Joo of Suwon-si (KR) for samsung electronics co., ltd., Jaeho Jin of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): C30B25/16, C30B25/12
CPC Code(s): C30B25/16
Abstract: a thin-film deposition apparatus includes: a housing; a chamber located within the housing and providing an internal space; a platform disposed within the chamber and configured to support a substrate; a reflector disposed within the housing and disposed outside the chamber; a light source disposed between opposing walls of the reflector and configured to radiate light onto the substrate; a light receiver disposed within the housing, spaced apart from the light source with a portion of the reflector therebetween, and having a hole through which light emitted from the substrate is introduced; an optical cable connected to the light receiver and extending to the outside of the housing; and a sensor disposed outside the housing, connected to the optical cable, and configured to measure a temperature of the substrate by analyzing light transmitted from the optical cable.
Inventor(s): Kanghyun LEE of Suwon-si (KR) for samsung electronics co., ltd., Byoungyull YANG of Suwon-si (KR) for samsung electronics co., ltd., Youngjin CHO of Suwon-si (KR) for samsung electronics co., ltd., Sanggyu JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): D06F33/42, B01D29/11, B01D29/56, B01D29/60, B01D29/64, B01D35/147, B01D61/14, B01D61/18, B01D61/22, D06F33/43, D06F33/47, D06F39/08, D06F39/10, D06F103/16, D06F103/18, D06F103/42, D06F103/44, D06F105/08, D06F105/58
CPC Code(s): D06F33/42
Abstract: a washing machine including a tub disposed inside a main body, a drainage pump configured to cause the received water inside the tub to flow to an outside of the washing machine through a drainage passage, a first filter, arrangeable along the drainage passage, to filter out foreign matter equal to or greater than predetermined size from the water, and a second filter, arrangeable along the drainage passage, to filter out foreign matter smaller than the predetermined size from the water. the drainage passage includes a first connecting hose to guide the water to flow from the tub to the first filter, a second connecting hose to guide the water to flow from the first filter to the second filter, and a drainage hose to guide the water to be discharged from the second filter to the outside of the washing machine.
Inventor(s): Giseok SUNG of Suwon-si (KR) for samsung electronics co., ltd., Sanghoon EUM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): F16M11/10, G03B21/14
CPC Code(s): F16M11/10
Abstract: an angle controlling apparatus includes: an electronic device; a housing including upper housing and lower housings; a bracket inside the housing; a first motor inside the housing and configured to generate power for rotating the bracket; a first one-way transmission member connecting the bracket and the first motor to transmit the power generated by the first motor to the bracket, and prevent a force acting on the bracket from being transmitted to the first motor; a second motor inside the housing and configured to generate power for rotating the lower housing in left and right directions; and a second one-way transmission member connecting the lower housing and the second motor to transmit the power generated by the second motor to the lower housing to allow the lower housing to rotate, and prevent a force acting on the lower housing from being transmitted to the second motor.
Inventor(s): Jeongkyo OH of Suwon-si (KR) for samsung electronics co., ltd., Minji KIM of Suwon-si (KR) for samsung electronics co., ltd., Sewon KIM of Suwon-si (KR) for samsung electronics co., ltd., Hakjae LEE of Suwon-si (KR) for samsung electronics co., ltd., Jaeyoun CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): F24F1/42
CPC Code(s): F24F1/42
Abstract: a spraying device, for spraying water onto an outdoor device of an air conditioner, including a water tank to store water, a first water level sensor to detect the water at a first water level, a second water level sensor to detect the water at a second water level, a nozzle to spray the water onto the outdoor device, and at least one processor configured to perform control to: with the stored water not being sprayed: start spraying the water onto the outdoor device, based on the water being detected at the first water level by the first water level sensor and the water being detected at the second water level by the second water level sensor, and with the stored water being sprayed: stop spraying the water onto the outdoor device, based on the water not being detected at the second water level by the second water level sensor.
20240219096. REFRIGERATOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Sihoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Jongeun KIM of Suwon-si (KR) for samsung electronics co., ltd., Myoungjin JANG of Suwon-si (KR) for samsung electronics co., ltd., Jinhong YU of Suwon-si (KR) for samsung electronics co., ltd., Jisick HWANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): F25D17/04, F25D25/02
CPC Code(s): F25D17/045
Abstract: provided is a refrigerator including: a storage compartment; a cold air outlet configured to supply cold air to the storage compartment; and a shelf disposed within the storage compartment, the shelf including: a cold air communication hole formed at a position corresponding to the cold air outlet; a shelf body including a support wall; a shelf base below the shelf body and coupled to the shelf body, the shelf base including a bottom wall covering the support wall and forming a gap between the bottom wall and the support wall; and a cold air control lever between the bottom wall and the support wall and supported by the bottom wall, the cold air control lever being configured to open and close the cold air communication hole.
20240219098. REFRIGERATOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Youngmin YOU of Suwon-si (KR) for samsung electronics co., ltd., Jinyoung SONG of Suwon-si (KR) for samsung electronics co., ltd., Byungkwan YANG of Suwon-si (KR) for samsung electronics co., ltd., Jaehyun LEE of Suwon-si (KR) for samsung electronics co., ltd., Jongwoo HAN of Suwon (KR) for samsung electronics co., ltd.
IPC Code(s): F25D17/06, F25D17/08
CPC Code(s): F25D17/065
Abstract: a refrigerator includes an inner case forming a storage compartment, a duct in the storage compartment, the duct including: a duct body, and a first coupling portion on a front side of the duct body, and a partition detachably mountable in front of the duct and dividing the storage compartment into a refrigerating compartment and a freezing compartment, the partition including: a partition body, a second coupling portion on a rear surface of the partition body and couplable to the first coupling portion, a partition hole in the partition body, and a partition insulator within the partition body and including an exposed portion exposed through the partition hole, wherein the partition insulator is configured so that when the partition is mounted in front of the duct and the second coupling portion is coupled to the first coupling portion, the exposed portion is in close contact with the duct body.
20240219104. REFRIGERATOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Suhyeong LIM of Suwon-si (KR) for samsung electronics co., ltd., Seongwoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Jaejin LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): F25D23/02, E05F15/619
CPC Code(s): F25D23/028
Abstract: a refrigerator includes a main body having a storage compartment, and a door rotatably coupled to the main body to open or close the storage compartment. the refrigerator includes a slider provided on the main body, and is configured to movable in a front-rear direction to open or close the door, the slider including a contact part. the refrigerator includes a magnetic force part installed to to the rear surface of the door so that the door is configured to be opened or closed by the slider while the magnetic force part is magnetically attached to the contact part. at least one of the contact part and a part of the magnetic force part is configured to be rotatable so that while the attachment of the magnetic force part and the contact part is maintained.
20240219105. REFRIGERATOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Sungdeuk PARK of Suwon-si (KR) for samsung electronics co., ltd., Youngmin KWON of Suwon-si (KR) for samsung electronics co., ltd., Jeongman NAM of Suwon-si (KR) for samsung electronics co., ltd., Seongwoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Seungho YOON of Suwon-si (KR) for samsung electronics co., ltd., Hojun JEONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): F25D23/02, A47B96/20, A47L15/42
CPC Code(s): F25D23/028
Abstract: provided is a refrigerator including a main body including a storeroom, a door body arranged to open or close the storeroom, a decoration panel coupled to a front side of the door body, and a holder mounted on the front side of the door body to be coupled to the decoration panel. the door body includes a rear case defining a rear side of the door body, and a main case defining front and sides of the door body. the main case includes a front part defining the front side of the door body and having an installation groove in which to install the holder, side parts defining sides of the door body, and a rear coupler coupled to the rear case. the main case is formed by bending a single metal board.
Inventor(s): Jinmyoung KIM of Suwon-si (KR) for samsung electronics co., ltd., Byonggwon SONG of Suwon-si (KR) for samsung electronics co., ltd., Jangwoo YOU of Suwon-si (KR) for samsung electronics co., ltd., Duhyun LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01J5/20
CPC Code(s): G01J5/20
Abstract: a thermal imaging pixel, including a variable resistor array; and a pixel readout circuit configured to read electrical signals corresponding to a composite resistance of the variable resistor array, wherein the variable resistor array includes a plurality of variable resistor subarrays electrically connected in series, wherein each variable resistor subarray of the plurality of variable resistor subarrays includes a plurality of variable resistor cells electrically connected in parallel, and wherein each variable resistor cell of the plurality of variable resistor cells has a resistance which changes according to temperature.
Inventor(s): Hyeong Seok JANG of Suwon-si (KR) for samsung electronics co., ltd., Won Jong JUNG of Suwon-si (KR) for samsung electronics co., ltd., Jin Ha KIM of Suwon-si (KR) for samsung electronics co., ltd., Kak NAMKOONG of Suwon-si (KR) for samsung electronics co., ltd., Hyung Jun YOUN of Suwon-si (KR) for samsung electronics co., ltd., Jae Hong LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01N15/02
CPC Code(s): G01N15/0205
Abstract: provided is an apparatus configured to detect fine particles, including a fine particle trap including a plurality of through holes that are configured to trap the fine particles, a measurer including a light source configured to emit light to the plurality of through holes, and a detector configured to detect light scattered, reflected, or transmitted through the plurality of through holes and measure a spectrum, and a processor configured to estimate a number of the fine particles trapped in the plurality of through holes based on of the measured spectrum, wherein the plurality of through holes have a diameter equal to or less than 10 �m.
Inventor(s): Min Ho Rim of Suwon-si (KR) for samsung electronics co., ltd., Young Hoon Sohn of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01N21/95, H01L21/66
CPC Code(s): G01N21/9501
Abstract: a method for manufacturing a semiconductor device includes generating light, modulating power of the light to generate power-modulated light, acquiring an image signal of a measurement target using the power-modulated light, filtering the image signal to separate a real signal and a false signal, analyzing the measurement target using the real signal, and performing a semiconductor process on the measurement target based analyzing the measurement target using the real signal, wherein filtering the image signal includes classifying a first component of the image signal that is dependent on power of the power-modulated light as the real signal, and classifying a second component of the image signal that is independent of the power of the power-modulated light as the false signal.
Inventor(s): Jangwoon Sung of Suwon-si (KR) for samsung electronics co., ltd., Lei Tian of Boston MA (US) for samsung electronics co., ltd., Hao Wang of Boston MA (US) for samsung electronics co., ltd., Jiabei Zhu of Boston MA (US) for samsung electronics co., ltd., Myungjun Lee of Suwon-si (KR) for samsung electronics co., ltd., Wookrae Kim of Suwon-si (KR) for samsung electronics co., ltd., Seungbeom Park of Suwon-si (KR) for samsung electronics co., ltd., Junho Shin of Suwon-si (KR) for samsung electronics co., ltd., Hojun Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01N21/95, G01N21/88, G01N21/956
CPC Code(s): G01N21/9501
Abstract: a substrate inspection apparatus includes a light irradiator including an objective lens and a plurality of optical fibers. the objective lens is configured to irradiate light to an illumination area on a semiconductor substrate having a plurality of circuit pattern layers, the plurality of optical fibers are adjacent a periphery of the objective lens and are configured to irradiate the light to a peripheral area adjacent the illumination area. a light generator is configured to generate the light. the light generator is configured to change an irradiation angle of the light to selectively irradiate the light to one or more of the objective lens and the plurality of optical fibers. a light analyzer is configured to obtain images of the circuit pattern layers from the light reflected from the illumination area and the peripheral area. the light analyzer is configured to model each of the circuit pattern layers of the semiconductor substrate to obtain image models and to measure an overlay between the circuit pattern layers through the images and the image models.
Inventor(s): Hankyu LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01S7/4865, G01S7/484, G01S7/4861, G01S17/10
CPC Code(s): G01S7/4866
Abstract: the present disclosure provides methods and apparatuses for performing light detection and ranging (lidar). in some embodiments, a device includes a light transmitter configured to radiate, to an object, light comprising a transmission signal, a light receiver configured to receive light reflected from the object, an integrator configured to obtain, by integrating a reception signal obtained from the received light, an analog signal corresponding to a convolution result between the reception signal and the transmission signal, and a processor configured to measure, by a time-of-flight (tof) method, a distance from the device to the object, based on the analog signal.
Inventor(s): Sehee Han of Suwon-si (KR) for samsung electronics co., ltd., Seongah Jeong of Suwon-si (KR) for samsung electronics co., ltd., Kangjin Yoon of Suwon-si (KR) for samsung electronics co., ltd., Haeyoung Jun of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01S13/02, G01S5/02, G01S13/76, H04B1/7163, H04W4/029, H04W12/104, H04W12/122, H04W12/64
CPC Code(s): G01S13/0209
Abstract: provided is a secure ranging method capable of blocking access of a malicious user by preventing an attack by the malicious user when ranging is performed using an ultra-wideband (uwb). also, provided is a method of increasing accuracy of ranging. a method of operating an electronic device for performing ranging by using a uwb in a wireless communication system includes: transmitting and receiving at least one frame for ranging, to and from at least one other electronic device; obtaining a first ranging value and a second ranging value, based on the at least one frame; and performing integrity checking, based on a result of comparing the first ranging value with the second ranging value.
Inventor(s): AKIO MISAKA of Suwon-si (KR) for samsung electronics co., ltd., NOYOUNG CHUNG of Suwon-si (KR) for samsung electronics co., ltd., SEOKYUN JEONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F1/24, G03F1/54, H01L21/027, H01L21/311, H01L21/768
CPC Code(s): G03F1/24
Abstract: an extreme ultraviolet (euv) reflective mask including: a mask substrate, a reflection layer on the mask substrate, and an absorption layer on the reflection layer, wherein the absorption layer includes a main pattern and non-diffraction patterns the main pattern, the non-diffraction patterns form a honeycomb shape, a pitch between the non-diffraction patterns is less than a diffraction limit, and the main pattern is isolated from the non-diffraction patterns.
20240219826. METHOD OF REMOVING DEFECT OF MASK_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Yoonki HWANG of Suwon-si (KR) for samsung electronics co., ltd., Sanghyeon LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F1/72, G01Q30/04, G01Q40/02, G01Q60/38, G06T7/00
CPC Code(s): G03F1/72
Abstract: a method of removing a defect of a mask may include generating a probe profile, the probe profile including characteristics of a probe of an atomic force microscope (afm); generating a design-based reference image of a defect area by applying the probe profile to a design image of the defect area of the mask including a location of the defect; obtaining an afm image of the defect area by scanning the defect area of the mask using the probe of the afm; recognizing the defect as a recognized defect by comparing the afm image of the defect area with the design-based reference image; and removing the recognized defect using the probe of the afm.
Inventor(s): SEUNGHAK PARK of Suwon-si (KR) for samsung electronics co., ltd., Jinsun Kim of Suwon-si (KR) for samsung electronics co., ltd., Jeongjin Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F7/00, H01L21/66
CPC Code(s): G03F7/70633
Abstract: an overlay measurement method includes providing a device structure including a substrate, a lower stack on the substrate and an upper stack on the lower stack, measuring a first overlay including critical dimension (cd) information of the device structure, measuring a second overlay including tilt information of the device structure, and calculating a compensation overlay by combining the first overlay and the second overlay, wherein the device structure has a first structure penetrating a portion of at least one of the lower stack or the upper stack in a vertical direction perpendicular to an upper surface of the substrate, and a second structure penetrating a portion of the lower stack and a portion of the upper stack in the vertical direction.
Inventor(s): Sanghwan LEE of Suwon-si (KR) for samsung electronics co., ltd., Dohyung KIM of Suwon-si (KR) for samsung electronics co., ltd., Jinhong PARK of Suwon-si (KR) for samsung electronics co., ltd., Hachul SHIN of Suwon-si (KR) for samsung electronics co., ltd., Seongchul HONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F7/00, G03F1/42
CPC Code(s): G03F7/7085
Abstract: a mask stage, including a body, a support on a lower surface of the body including an attachable extreme ultraviolet mask, a fiducial mark on the lower surface of the body and spaced apart from the support, and a sensor area including a plurality of measurement sensors configured to measure an energy of a portion of extreme ultraviolet light incident on the body, wherein the sensor area is on the lower surface of the body and is spaced apart from the support in a scan direction of the extreme ultraviolet light, and the plurality of measurement sensors are spaced apart from one another in a direction perpendicular to the scan direction.
Inventor(s): Jaeyoung JUNG of Suwon-si (KR) for samsung electronics co., ltd., Heungryong OH of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G05D1/247, A47L9/00, A47L9/28, A47L11/40, G01S17/931, G05D1/661, G05D105/10
CPC Code(s): G05D1/247
Abstract: provided is a method of controlling a robot cleaner. the method of controlling the robot cleaner includes initiating a homing operation of moving the robot cleaner to a charger, detecting, by an ultra-wideband (uwb) antenna of the robot cleaner, a plurality of uwb signals output from a plurality of uwb antennas included in the charger, identifying position information of the charger and position information of the robot cleaner based on the detected plurality of uwb signals, and controlling the robot cleaner to move to the charger based on the identified position information of the charger and the identified position information of the robot cleaner.
Inventor(s): Jaehyouk Choi of Daejeon (KR) for samsung electronics co., ltd., Yuhwan Shin of Daejeon (KR) for samsung electronics co., ltd., Juyeop Kim of Daejeon (KR) for samsung electronics co., ltd., Yongwoo Jo of Daejeon (KR) for samsung electronics co., ltd.
IPC Code(s): G06F1/08
CPC Code(s): G06F1/08
Abstract: a clock generator includes a phase controller configured to generate phase control information in response to comparing a phase of an input clock signal against a phase of a division clock signal, and an oscillator configured to generate a plurality of oscillation signals at an equivalent output frequency but different phases, in response to the phase control information and duty control information. a duty cycle converter is provided, which is configured to generate a plurality of output clock signals at the output frequency by adjusting duty cycles of the plurality of oscillation signals, such that the plurality of output clock signals have duty cycles smaller than the duty cycles of the plurality of oscillation signals. a clock divider is provided, which is configured to generate the division clock signal by dividing the output frequency of one of the plurality of output clock signals, such that the division clock signal has a division frequency smaller than the output frequency. a duty cycle calibrator is provided, which is configured to generate the duty control information for adjusting a duty cycle difference of the plurality of output clock signals, in response to detecting duty cycle differences between the plurality of output clock signals.
20240219965. ELECTRONIC DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Wanjae JU of Suwon-si (KR) for samsung electronics co., ltd., Seunghak LEE of Suwon-si (KR) for samsung electronics co., ltd., Chanho PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F1/16, G06F1/18, G09G3/3208, H01Q1/24, H04M1/72403, H04W12/72
CPC Code(s): G06F1/165
Abstract: various embodiments relate to an electronic device. the electronic device may include: a housing including a first surface facing a first direction and a second surface facing a second direction opposite the first direction; a first display viewable through the first surface; a battery disposed between the first display and the second surface; a second display having a size smaller than a size of the first display and viewable through a partial area of the second surface; a short-distance wireless communication antenna disposed at a lower end of the second display and configured to transmit/receive a short-distance wireless communication signal through the partial area of the second surface and the second display; and a shield disposed at a lower end of the short-distance wireless communication antenna and configured to block transmission/reception of the short-distance wireless communication signal through the first surface.
Inventor(s): Young deok KIM of San Jose CA (US) for samsung electronics co., ltd., Pyeongwoo LEE of Sunnyvale CA (US) for samsung electronics co., ltd., Sumanth JANNYAVULA VENKATA of Fremont CA (US) for samsung electronics co., ltd.
IPC Code(s): G06F1/3234, G01R21/133, G06F1/26, G06F1/3206, G06F1/324
CPC Code(s): G06F1/3268
Abstract: inventive aspects include a device including storage media. the device includes a pmu, and a controller communicatively coupled to the pmu. the pmu determines that an operating power of the device exceeds a threshold, and transmits a signal to the controller to trigger a power reduction operation. the controller throttles one or more operations until the operating power goes below the threshold. some embodiments include a method for controlling performance of a storage device. the method includes measuring, by a pmu, a power consumption associated with a storage device. the method includes determining, by the pmu, whether the power consumption is greater than a threshold. in response, the method may include setting a performance throttle. the method may include determining, by the pmu, whether the power consumption is less than the threshold. in response, the method may include releasing the performance throttle.
Inventor(s): Jongchul CHOI of Suwon-si (KR) for samsung electronics co., ltd., Bonkon Koo of Suwon-si (KR) for samsung electronics co., ltd., Sanghyun Yi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/01, G02B27/01, G06V40/19
CPC Code(s): G06F3/013
Abstract: a head mounted display (hmd) apparatus may include: a display; an optical lens adjacent to a first side of the display; at least one light source configured to emit light; and at least one eye-tracking sensor adjacent to a second side of the display and configured to obtain gaze information about a user by receiving reflected light that is the light emitted from the at least one light source and reflected off eyes of the user. the display may include a second display region corresponding to a position of the at least one eye-tracking sensor, and a first display region other than the second display region. a number of pixels per unit area of the first display region may be greater than a number of pixels per unit area of the second display region.
Inventor(s): Dohyeon PARK of Suwon-si (KR) for samsung electronics co., ltd., Dongeun SHIN of Suwon-si (KR) for samsung electronics co., ltd., Jinhyuk LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
CPC Code(s): G06F3/0604
Abstract: a method of operating a storage device including a plurality of nonvolatile memory devices and a storage controller, including: generating a parity chunk by performing a redundant array of independent disks (raid) encoding on a plurality of data chunks; storing a data stripe including the plurality of data chunks and the parity chunk in a plurality of memory blocks included in the plurality of nonvolatile memory devices; and performing a direct read operation or an indirect read operation based on an operating state of the storage device such that in the direct read operation a target data chunk is directly read from the plurality of nonvolatile memory devices, and in the indirect read operation the target data chunk is generated by performing a raid decoding.
Inventor(s): Hong-Jun Jin of Suwon-si (KR) for samsung electronics co., ltd., Wonyoung Choi of Suwon-si (KR) for samsung electronics co., ltd., Chungman Kim of Suwon-si (KR) for samsung electronics co., ltd., Youngseok Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
CPC Code(s): G06F3/0611
Abstract: a memory device according to an embodiment includes a memory cell array; a timing circuit configured to generate a first clock signal and a second clock signal, the second clock signal having a frequency that is i-times the frequency of the first clock signal; a command decoder configured to receive on-the-fly (otf) data including a plurality of otf bits; a receiver configured to receive input data, configured to sample the input data based on the first clock signal, and configured to generate a first signal based on the sampled input data; a deserializer configured to generate a first deserialized signal from the first signal based on the second clock signal; a data pattern generator configured to generate a pattern signal based on the first deserialized signal and the otf data based on the second clock signal; and a decoder configured to transmit the pattern signal to the memory cell array, where i is a natural number greater than or equal to 2.
Inventor(s): Ilgu HONG of Santa Clara CA (US) for samsung electronics co., ltd., Changho CHOI of San Jose CA (US) for samsung electronics co., ltd., Yang Seok KI of Palo Alto CA (US) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
CPC Code(s): G06F3/0631
Abstract: a method includes receiving, at a controller of a computational storage (cs) device, a request to allocate computational storage to an application of a host device. the request includes a resource set id associated with the application. the method further includes identifying a memory range within a memory region of the cs device. the method further includes storing, in a data structure associated with the resource set id, an association between a memory range identifier (id) of the memory range, the memory region, and an offset within the memory region. the method further includes sending the memory range id to the host device.
20240220143. METHOD FOR MANAGING VIRTUAL ZONE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Seungjun YANG of Suwon-si (KR) for samsung electronics co., ltd., Nam Wook KANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
CPC Code(s): G06F3/064
Abstract: a storage device includes a non-volatile memory including a plurality of blocks, and a storage controller configured to divide the plurality of blocks into a plurality of zones, determine a first zone of the plurality of zones corresponding to a logical address received from a host, based on a value of the logical address, map the logical address to a physical address corresponding to a first block in the first zone, and replace at least one of the logical address or the first block with a logical address or a block of a second zone of the plurality of zones. the second zone is different from the first zone.
20240220149. SEMICONDUCTOR MEMORY DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Kiheung Kim of Suwon-si (KR) for samsung electronics co., ltd., Taeyoung Oh of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
CPC Code(s): G06F3/0655
Abstract: a semiconductor memory device includes a memory cell array and a column access circuit. the memory cell array includes a plurality of sub-array blocks and each of the sub-array blocks includes volatile memory cells. the column access circuit receives a plurality of data units, each of which includes normal data and meta data having a ratio of k:, which is associated with managing the normal data, allocates p column selection lines associated with transferring the data units to the bit-lines to a plurality of normal data and a plurality of meta data in the data units with the ratio of k:, and stores a sub unit of a first normal data among the plurality of normal data and a sub unit of a first meta data in a first region and a second region of a first sub-array block of the plurality of sub-array blocks, respectively.
Inventor(s): Heeseok Eun of Suwon-si (KR) for samsung electronics co., ltd., Seunghan Lee of Suwon-si (KR) for samsung electronics co., ltd., Jinwook Lee of Suwon-si (KR) for samsung electronics co., ltd., Soo-Young Ji of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
CPC Code(s): G06F3/0655
Abstract: in a storage system, a first computational storage device may be configured to store first data used to execute a program, and a second computational storage device may be configured to store second data used to execute the program. the second computational storage device may be configured to receive the program offloaded from the host device, bring the first data from the first computational storage device, and execute the program using a plurality of data including the first data and the second data.
Inventor(s): Jong Won LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
CPC Code(s): G06F3/0655
Abstract: computational storage device and method for operating the device are provided. the method for operating the device comprises receiving, by a storage controller, a first computing namespace setting instruction from a first host device, receiving, by the storage controller, a second computing namespace setting instruction from a second host device, receiving, by the storage controller, a first program from the first host device, receiving, by the storage controller, a second program from the second host device, receiving, by the storage controller, a fused execution command processing, by a first accelerator, the first computation, storing, by the storage controller, a first computation result obtained by processing the first computation in a buffer memory, providing, by the storage controller, data stored in the buffer memory to a second accelerator different from the first accelerator and processing, by the second accelerator, the second computation on the data provided from the buffer memory.
Inventor(s): Junho KIM of Suwon-si (KR) for samsung electronics co., ltd., Jea-Young KWON of Suwon-si (KR) for samsung electronics co., ltd., Jaesub KIM of Suwon-si (KR) for samsung electronics co., ltd., Yangwoo ROH of Suwon-si (KR) for samsung electronics co., ltd., Hongmoon WANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
CPC Code(s): G06F3/0656
Abstract: a storage device includes a nonvolatile memory device including a plurality of zones, each of the plurality of zones including a plurality of logical addresses, and a storage controller configured to control the nonvolatile memory, the storage controller including at least one buffer directly accessible by a host device, the buffer including at least one random write area and a write pointer, the write pointer configured to store a position indicating a starting logical address of the random write area, and the buffer configured to write data into the random write area based on the position of the write pointer in response to the buffer receiving the write data from the host device.
Inventor(s): Jinkyu YU of Suwon-si (KR) for samsung electronics co., ltd., Seokbeom KIM of Suwon-si (KR) for samsung electronics co., ltd., Inki LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/14
CPC Code(s): G06F3/1446
Abstract: an electronic device including a processor to obtain a first captured image of a display device outputting a first image; obtain proportion information of the display device based on size information of an area corresponding to the first image in the first captured image; obtain layout information of display modules of the display device based on the proportion information ; allocate, based on the layout information, location information to areas respectively corresponding to the display modules in the first captured image; transmit, to the display device, a second image in which a first display module outputs an image different from those of remaining display modules; identify an area in which the different image is displayed in a second captured image of the display device outputting the second image; obtain location information corresponding to the identified area as location information of the first display module.
Inventor(s): Youngchan WOO of Suwon-si (KR) for samsung electronics co., ltd., Donghee KANG of Suwon-si (KR) for samsung electronics co., ltd., Choonkyoung MOON of Suwon-si (KR) for samsung electronics co., ltd., Christian PARK of Suwon-si (KR) for samsung electronics co., ltd., Joayoung LEE of Suwon-si (KR) for samsung electronics co., ltd., Jiwon JEON of Suwon-si (KR) for samsung electronics co., ltd., Hoon HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/14, G06F3/01, G06T11/00, G06V20/20, G06F3/0482
CPC Code(s): G06F3/1454
Abstract: a method and a device capable of supporting various display methods using an electronic device and/or glasses-type wearable electronic device (e.g., ar glasses) in an augmented reality (ar) are provided. an ar providing device for ar services includes a display and a processor. the processor is configured to provide content through an ar screen, detect a specified external object through the ar screen while providing the content, determine a display mode for providing the content, based on detection of the specified external object, control to display the content through a display of the specified external object, based on the determined display mode, and perform control to display the content through a virtual display area associated with the specified external object on the ar screen, based on the determined display mode.
Inventor(s): Jeongseop KIM of Suwon-si (KR) for samsung electronics co., ltd., Minsung JUNG of Suwon-si (KR) for samsung electronics co., ltd., Dongjae LIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/16, G10L15/22, G10L15/26
CPC Code(s): G06F3/167
Abstract: an electronic device and a method of controlling the electronic device are provided. the electronic device includes a microphone, a display, memory, and a processor configured to obtain, based on a user voice being received through the microphone while a first user interface (ui) screen is being displayed, text information corresponding to the user voice by inputting the user voice, obtain first information including information on a command and information on an execution target of the command included in the text information, obtain second information including information on functions corresponding to the plurality of objects and information on texts included in the plurality of objects, identify whether a target object corresponding to the user voice is present from among the plurality of objects, and control the display to display a second ui screen corresponding to the target object for performing an operation corresponding to the command.
Inventor(s): Yongha PARK of Seongnam-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F9/30, G06F9/34, G06F9/38, G06F13/16
CPC Code(s): G06F9/3004
Abstract: an interconnect device may include one or more hardware-implemented modules configured to: receive a command from a processing core; perform, based on the received command, an operation including either one or both of an accumulation operation on sets of data stored in a memory and an aggregation operation on results processed by the processing core; and provide a result of the performing of the operation.
Inventor(s): Matthew Shaun BRYSON of Los Gatos CA (US) for samsung electronics co., ltd., Oscar P. PINTO of San Jose CA (US) for samsung electronics co., ltd., Vishwanath MARAM of San Jose CA (US) for samsung electronics co., ltd., Seyed Mehdi BOSTANDOOST NIK of Sunnyvale CA (US) for samsung electronics co., ltd., Sainathan LOGANATHAN of Milpitas CA (US) for samsung electronics co., ltd., Wenjie LIU of San Jose CA (US) for samsung electronics co., ltd.
IPC Code(s): G06F9/38, G06F9/30
CPC Code(s): G06F9/3836
Abstract: a method may include receiving, by at least one processing circuit, an input representation of a computational workflow, wherein the input representation may include at least one instruction in an input format, and generating, by the at least one processing circuit, based on the input representation, an intermediary format representation of the computational workflow, wherein the intermediary format representation may include at least one intermediary format instruction for a computational device. the at least one intermediary format instruction may include an instruction to perform, by the computational device, at least one of a load operation, a store operation, or a computational operation. the generating the intermediary format representation may include generating the intermediary format representation based on an arrangement of the computational workflow.
Inventor(s): Fengtao XIE of Xi’an (CN) for samsung electronics co., ltd., Huiru DENG of Xi’an (CN) for samsung electronics co., ltd., Lu WEI of Xi’an (CN) for samsung electronics co., ltd., Biao XING of Xi’an (CN) for samsung electronics co., ltd.
IPC Code(s): G06F9/54
CPC Code(s): G06F9/542
Abstract: a method and apparatus for adjusting a checkpoint are provided. the method includes monitoring calls of an application program interface (api) that are called when an accelerator device executes an application, and by the monitoring, checking an api execution logic and a current api execution cycle of the application with respect to the accelerator device; and determining a next checkpoint according to a checkpoint adjustment strategy that determines the next checkpoint based on the api execution logic and based on the current api execution cycle of the application, wherein the checkpoint adjustment strategy corresponds to at least one api execution logic among plural api execution logics.
Inventor(s): Taewook HEO of Suwon-si (KR) for samsung electronics co., ltd., Suckhyun NAM of Suwon-si (KR) for samsung electronics co., ltd., Ho-Jin CHUN of Suwon-si (KR) for samsung electronics co., ltd., Minha KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F11/14
CPC Code(s): G06F11/1479
Abstract: some example embodiments provide a storage device including a non-volatile memory; a microcontroller unit configured to monitor statuses of constituent elements of the storage device and output an abnormality signal based on the constituent elements not being in a normal status; and a storage controller configured to perform a first check and a second check different from the first check on a first firmware code stored in the microcontroller unit in response to the abnormality signal and perform recovery by using a second firmware code stored in the non-volatile memory based on at least one of the first check and the second check having failed.
Inventor(s): Wonik SEO of Suwon-si (KR) for samsung electronics co., ltd., Dong-uk RYU of Suwon-si (KR) for samsung electronics co., ltd., Sungduk CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F12/08, G06N3/0455, G06N3/084
CPC Code(s): G06F12/08
Abstract: a method and apparatus for managing a unified virtual memory (uvm) are provided. the uvm is backed by a main processor memory and a coprocessor memory, and the method includes: checking properties of data blocks of the uvm used to execute a deep learning model; based on a first of the data blocks storing weight data of the deep learning model, storing the first data block in the main processor memory among the main processor memory and the coprocessor memory; and performing an operation of the deep learning model based on the first data block using a coprocessor while directly loading at least a portion of the first data block from the main processor memory into a cache memory of the coprocessor without migration of the first data block from the main processor memory to the coprocessor memory.
Inventor(s): Jinwoong LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F12/0891
CPC Code(s): G06F12/0891
Abstract: a storage device, an operation method thereof, and an electronic device are disclosed. a storage device includes a main memory comprising a first segment that is not masked and a second segment that is masked, a cache memory configured to store some metadata stored in the main memory, and a memory controller configured to map a physical address of the second segment to a physical address of the first segment in a remap table for dirty metadata to be stored in the second segment in response to a cache miss occurring.
Inventor(s): SEUNG-HO LEE of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): G06F21/62, G06F21/33
CPC Code(s): G06F21/6245
Abstract: a storage device includes: a nonvolatile memory storing data of a first user; and a storage controller configured to receive an access request from a second user to access the data of the first user, obtain access approval for accessing the data from the first user in response to the access request, generate a token granting access authority to the second user for accessing the data using an embedded certificate authority (eca) upon obtaining the access approval, and send the token to the second user.
Inventor(s): Hanju LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F21/79, G06F21/60, G06F21/74
CPC Code(s): G06F21/79
Abstract: a storage device includes a non-volatile memory, and a storage controller configured to read a non-encrypted command from a memory outside the storage device. the storage controller is also configured to transmit encrypted data to the non-volatile memory or the memory based on the non-encrypted command, and transmit a non-encrypted completion to the memory. the non-encrypted completion indicates a result of executing the non-encrypted command.
Inventor(s): Yangwoo Heo of Suwon-si (KR) for samsung electronics co., ltd., Majd Kuteifan of Suwon-si (KR) for samsung electronics co., ltd., Mindy Lee of Suwon-si (KR) for samsung electronics co., ltd., SOOYONG LEE of Suwon-si (KR) for samsung electronics co., ltd., JEEYONG LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F30/392
CPC Code(s): G06F30/392
Abstract: provided is a process model generating method including: obtaining a target layout for a process of a semiconductor device and a plurality of sublayers representing a substructure of the semiconductor device; determining a lateral feature and a vertical feature of the target layout; and generating a correction model for the target layout based on the lateral feature and the vertical feature.
Inventor(s): Taehyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyunjoong KIM of Suwon-si (KR) for samsung electronics co., ltd., Jichull JEONG of Suwon-si (KR) for samsung electronics co., ltd., Euihyun CHEON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F30/392, G06N20/00
CPC Code(s): G06F30/392
Abstract: disclosed is a method and system for designing a circuit. the method of designing a circuit based on reinforcement learning may include obtaining a state variable of the reinforcement learning, obtaining output data by performing a simulation based on the state variable, calculating a reward variable of the reinforcement learning based on the output data, obtaining an action variable from an agent based on the state variable and the reward variable, training the agent based on the state variable, the reward variable, and the action variable, and updating the state variable based on the action variable, wherein the calculating of the reward variable includes estimating a variation of the circuit based on the state variable, and calculating the reward variable based on the estimated variation.
20240220761. MEMORY CARD_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Youngwoo Park of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06K19/077, G06K19/06
CPC Code(s): G06K19/07747
Abstract: a memory card includes a case including a first case portion and a second case portion that is coupled to the first case portion, an integrated circuit package located in the case, and a marking layer located in the case, wherein the second case portion includes a through-hole, wherein the marking layer is exposed to an outside through the through-hole.
Inventor(s): Arun CHAUHAN of Bangalore (IN) for samsung electronics co., ltd., Utsav TIWARI of Bangalore (IN) for samsung electronics co., ltd., Vikram Nelvoy RAJENDIRAN of Bangalore (IN) for samsung electronics co., ltd., Payal ANAND of Bangalore (IN) for samsung electronics co., ltd., Hitesh KUMAR of Bangalore (IN) for samsung electronics co., ltd., Rohit SAXENA of Bengaluru (IN) for samsung electronics co., ltd.
IPC Code(s): G06N3/0495
CPC Code(s): G06N3/0495
Abstract: a method for mixed precision quantization of an artificial intelligence (ai) model by an electronic device is included. the method includes performing, by the electronic device, perturbation in weights of each layer of a plurality of layers of the ai model for a pre-defined number of times, determining, by the electronic device, a change in an output of each layer of a plurality of layers of the ai model based on a perturbation in weights of each layer of the plurality of layers, determining, by the electronic device, a sensitivity metric for each layer of the plurality of layers of the ai model as a measure of the change in the output of each layer, assigning, by the electronic device, a bit-precision to each layer of the plurality of layers of the ai model based on the determined sensitivity metric, and performing, by the electronic device, the mixed precision quantization of the ai model using the bit-precision assigned to each layer of the plurality of layers of the ai model.
20240220786. NEURAL NETWORK ACCELERATOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Sungju RYU of Busan (KR) for samsung electronics co., ltd., Hyungjun KIM of Pohang-si (KR) for samsung electronics co., ltd., Jae-Joon KIM of Pohang-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06N3/063, G06F7/485, G06F7/523
CPC Code(s): G06N3/063
Abstract: disclosed is a neural network accelerator including a first bit operator generating a first multiplication result by performing multiplication on first feature 5 bits of input feature data and first weight bits of weight data, a second bit operator generating a second multiplication result by performing multiplication on second feature bits of the input feature data and second weight bits of the weight data, an adder generating an addition result by performing addition based on the first multiplication result and the second multiplication result, a shifter shifting a number 10 of digits of the addition result depending on a shift value to generate a shifted addition result and an accumulator generating output feature data based on the shifted addition result.
Inventor(s): Taejeoung KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06N3/098
CPC Code(s): G06N3/098
Abstract: an electronic apparatus, including: a communication interface; a memory configured to store at least one instruction; and at least one processor configured to: receive information regarding a global neural network model and information regarding evaluation data from a server using the communication interface; obtain a data set for training the global neural network model; train the global neural network model based on the data set; evaluate the trained global neural network model by inputting the evaluation data to the trained global neural network model; and determine whether to transmit information regarding the trained global neural network model to the server based on a result of the evaluating.
Inventor(s): Hongjun JANG of Suwon-si (KR) for samsung electronics co., ltd., Eunkyu OH of Suwon-si (KR) for samsung electronics co., ltd., Minsoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Taehun KIM of Suwon-si (KR) for samsung electronics co., ltd., Yunhu JI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06Q30/0211, G06Q30/0207
CPC Code(s): G06Q30/0211
Abstract: a method by which an electronic device provides a service to a user, includes: obtaining data related to at least one of the user, a plurality of products, or one or more marketing activities; identifying the user's purchase intention based on the data; identifying at least one product combination comprising two or more products from among the plurality of products and a discount rate of the at least one product combination by applying the identified user's purchase intention and the data to an artificial intelligence (ai) model; and displaying, on a display of the electronic device, the at least one product combination and the discount rate.
Inventor(s): Hanwoong JUNG of Suwon-si (KR) for samsung electronics co., ltd., Soonhoi HA of Seoul (KR) for samsung electronics co., ltd., Donghyun KANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T3/40
CPC Code(s): G06T3/4046
Abstract: neural network operation apparatus and method are provided. the neural network operation apparatus includes: one or more processors; and memory storing instructions configured to cause the one or more processors to: generate an upsampled tensor by copying pixels, of a unit of data, based on a scale factor for upsampling; and generate, based on the scale factor, a neural network operation result by performing a pooling operation on the upsampled tensor.
20240221119. Image-Filtering Interface_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Megan Rowe of Sunnyvale CA (US) for samsung electronics co., ltd., Ye Zhao of Sunnyvale CA (US) for samsung electronics co., ltd., Kushal Kardam Vyas of Santa Clara CA (US) for samsung electronics co., ltd., Jihee Kim of Mountain View CA (US) for samsung electronics co., ltd., Imran Mohammed of San Jose CA (US) for samsung electronics co., ltd., Thomas Brenner of Sunnyvale CA (US) for samsung electronics co., ltd., Hanna Fuhrmann of San Francisco CA (US) for samsung electronics co., ltd., Sajid Sadi of San Jose CA (US) for samsung electronics co., ltd.
IPC Code(s): G06T5/20, G06F3/0482, G06T5/40, G06T7/90, G06V10/74
CPC Code(s): G06T5/20
Abstract: in one embodiment, a method includes accessing an initial image and applying each image filter from a set of one or more n image filters to the initial image to create n filtered images. the method further includes generating a similarity metric for each pair of images in a set of images comprising the initial image and the n filtered images and determining, based on the similarity metrics, a placement of each image in the set of images within an image-filter space. the method further includes generating, based on the image-filter space, a selectable image-filter interface; and providing the selectable image-filter interface for display, wherein each selectable region of the selectable image-filter interface is associated with a particular filtering of the initial image.
Inventor(s): Nguyen Thang Long Le of Garland TX (US) for samsung electronics co., ltd., Tyler Luu of Richardson TX (US) for samsung electronics co., ltd., Hamid R. Sheikh of Allen TX (US) for samsung electronics co., ltd.
IPC Code(s): G06T5/00, G06T3/00, G06T5/50
CPC Code(s): G06T5/002
Abstract: a method includes generating alignment maps for a first image frame having a first exposure level and a second image frame having a second exposure level different than the first exposure level. the method also includes generating, for the second image frame and a third image frame having a third exposure level different than the first and second exposure levels, shadow maps, saturation maps, and multi-exposure (me) motion maps based on the alignment maps. the method further includes determining, based on the shadow maps, saturation maps, and me motion maps, whether to perform machine learning-based denoising and, if so, on which image frame(s) to perform the machine learning-based denoising. in addition, the method includes updating at least one saturation map and at least one me motion map for at least one of the second and third image frames depending on the image frame(s) on which the denoising is to be performed.
Inventor(s): Moonhee KIM of Suwon-si (KR) for samsung electronics co., ltd., Bongjoe Kim of Suwon-si (KR) for samsung electronics co., ltd., Sanghun Kim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T5/70, G06T5/50, G06T5/60, G06T7/00, G06T7/13, G06V10/44, G06V10/77
CPC Code(s): G06T5/70
Abstract: the present disclosure relates to an image processing method and device for removing perceptible noise from an image. the disclosed image processing method includes: obtaining a noise-removed image from an image; obtaining removed noise from a difference between the image and the noise-removed image; obtaining a statistical feature of the noise-removed image and a statistical feature of the noise; determining a noise feature regarding whether noise of a pixel is perceptible noise or a perceptible detail, based on the statistical feature of the noise-removed image and the statistical feature of the noise; and performing a process of removing the perceptible noise from the image based on the noise feature of the pixel.
Inventor(s): Tingting Zhao of Irvine CA (US) for samsung electronics co., ltd., Chang Su of Foothill Ranch CA (US) for samsung electronics co., ltd., Chenguang Liu of Tustin CA (US) for samsung electronics co., ltd.
IPC Code(s): G06T5/00
CPC Code(s): G06T5/009
Abstract: one embodiment provides a computer-implemented method that includes employing a de-banding process based on image statistics in a dynamic range conversion system, including high dynamic range (hdr) to standard dynamic range (sdr) tone mapping (tm) process or sdr-to-hdr inverse tone mapping (itm) process. a computing device performs the de-banding process in post-processing during a determination of one or more initial itm explicit polynomial curve coefficients. one or more parameters of a weighing function of the one or more initial itm explicit curve coefficients are utilized as one or more controlling knots for balancing a de-banding effect and preserving local detail.
Inventor(s): Jeong Yong Shin of Suwon-si (KR) for samsung electronics co., ltd., Sangmin Kim of Suwon-si (KR) for samsung electronics co., ltd., Jintae Jang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T7/00, G06T11/20, G06T17/00
CPC Code(s): G06T7/0002
Abstract: disclosed is a virtual image quality assessment system that includes an electronic device configured to receive simulation condition data based on a user input, perform an optical simulation based on the simulation condition data, perform a sensor simulation based on the simulation condition data and a result of the optical simulation, and generate raw image data based on a result of the sensor simulation.
Inventor(s): Solae LEE of Suwon-si (KR) for samsung electronics co., ltd., Seungin PARK of Suwon-si (KR) for samsung electronics co., ltd., Hyeongseok SON of Suwon-si (KR) for samsung electronics co., ltd., Byung In YOO of Suwon-si (KR) for samsung electronics co., ltd., Sangil JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T7/149
CPC Code(s): G06T7/149
Abstract: an apparatus with image segmentation includes: one or more processors configured to: obtain a second image based on a first segmentation label corresponding to a first image; generate a composite image by composing an image of an object corresponding to an object class of the first image among objects comprised by the second image with the first image; and train an image segmentation model based on the composite image, the first image, and the second image.
Inventor(s): Ju Hwan SONG of Suwon-si (KR) for samsung electronics co., ltd., Changbeom PARK of Suwon-si (KR) for samsung electronics co., ltd., Byung In YOO of Suwon-si (KR) for samsung electronics co., ltd., Dongwook LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T7/246, G06T3/40, H04N23/60
CPC Code(s): G06T7/248
Abstract: a processor-implemented method with target object tracking includes: setting a search area for a target object included in an input image based on a position of a first target box in a template image; selecting a network path from a plurality of network paths of a neural network model according to a resizing ratio of a size of another image that is input to the neural network model to a size of the search area; and tracking the target object by estimating a position of a second target box corresponding to the target object in the input image according to the selected network path.
Inventor(s): Doil KWON of Suwon-si (KR) for samsung electronics co., ltd., Sangsoon LIM of Seoul (KR) for samsung electronics co., ltd., Hansin KOH of Suwon-si (KR) for samsung electronics co., ltd., Sheungmin OH of Goyang-si (KR) for samsung electronics co., ltd., Seulbi SHIN of Osan-si (KR) for samsung electronics co., ltd., Seoyeoung HONG of Incheon (KR) for samsung electronics co., ltd.
IPC Code(s): G06T7/73, G06T17/00, G06V10/44
CPC Code(s): G06T7/73
Abstract: an electronic device for providing content in a virtual space obtaining an image is provided. the electronic device includes a user, obtain, from the image, first position information indicating the positions of a plurality of feature points indicating a specific part of the user's body, check whether a posture of the user included in the image corresponds to a preset response pose, based on the first position information, and determine the content to be provided in the virtual space, based on whether the user's posture corresponds to the preset response pose.
Inventor(s): Sangil JUNG of Suwon-si (KR) for samsung electronics co., ltd., Jiho CHOI of Suwon-si (KR) for samsung electronics co., ltd., Seungin PARK of Suwon-si (KR) for samsung electronics co., ltd., Hyeongseok SON of Suwon-si (KR) for samsung electronics co., ltd., Byung In YOO of Suwon-si (KR) for samsung electronics co., ltd., Solae LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T7/73
CPC Code(s): G06T7/73
Abstract: a processor-implemented method with pose estimation includes: receiving an image, instance queries for object identification, and joint queries for joint identification; generating first heat maps associated with objects and second heat maps associated with joints in parallel based on the image, the instance queries, and the joint queries; and estimating respective joint information of a plurality of objects included in the image by combining the first heat maps and the second heat maps.
Inventor(s): Hyungjun LIM of Suwon-si (KR) for samsung electronics co., ltd., Taegyoung AHN of Suwon-si (KR) for samsung electronics co., ltd., Youngsu MOON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T11/00, G06T5/20, H04N7/015
CPC Code(s): G06T11/001
Abstract: disclosed is an image processing apparatus and a method of operating the same. the image processing apparatus includes: a memory storing information on at least one random patch; and at least one processor configured to: obtain correlations between a pixel block included in an input image and each of a plurality of random patches obtained from the information on the at least one random patch, obtain weights respectively for the plurality of random patches on a basis of the obtained correlations and apply the weights respectively to the plurality of random patches, and obtain an output image by applying, to the pixel block, the plurality of random patches to which the weights are respectively applied.
Inventor(s): Hyun Jae Kang of Mountain View CA (US) for samsung electronics co., ltd., Siddarth Ravichandran of Santa Clara CA (US) for samsung electronics co., ltd., Ondrej Texler of San Jose CA (US) for samsung electronics co., ltd., Dimitar Petkov Dinev of Sunnyvale CA (US) for samsung electronics co., ltd., Anthony Sylvain Jean-Yves Liot of San Jose CA (US) for samsung electronics co., ltd., Sajid Sadi of San Jose CA (US) for samsung electronics co., ltd.
IPC Code(s): G06T11/60, G06T13/40, G06T13/80
CPC Code(s): G06T11/60
Abstract: image-to-image translations using 1d inputs includes concatenating multiple 1d vectors forming a concatenated 1d vector. the multiplicity of 1d vectors includes 1d vectors of at least two different modalities. an encoded 1d vector is generated by encoding the concatenated 1d vector. an encoded 2d array of features is generated by reshaping an arrangement of features of the encoded 1d feature vector. an image of a virtual human is generated by decoding the encoded 2d array.
Inventor(s): Dimitar Petkov Dinev of Sunnyvale CA (US) for samsung electronics co., ltd., Ondrej Texler of San Jose CA (US) for samsung electronics co., ltd., Siddarth Ravichandran of Santa Clara CA (US) for samsung electronics co., ltd., Janvi Chetan Palan of Santa Clara CA (US) for samsung electronics co., ltd., Hyun Jae Kang of Mountain View CA (US) for samsung electronics co., ltd., Ankur Gupta of San Jose CA (US) for samsung electronics co., ltd., Anil Unnikrishnan of Dublin CA (US) for samsung electronics co., ltd., Anthony Sylvain Jean-Yves Liot of San Jose CA (US) for samsung electronics co., ltd., Sajid Sadi of San Jose CA (US) for samsung electronics co., ltd.
IPC Code(s): G06T13/40, G06T13/20, G06T19/20, G06V40/16, G06V40/20
CPC Code(s): G06T13/40
Abstract: synthesizing speech and movement of a virtual human includes capturing supplemental data generated by a transducer. the supplemental data specifies one or more attributes of a user. the capturing is performed in substantially real-time with the user providing input to a conversational platform. a behavior determiner generates behavioral data based on the supplemental data and an audio response generated by the conversational platform in response to the input to the conversation platform. based on the behavioral data and the audio response, a rendering network generates a video rendering of a virtual human engaging in a conversation with the user, the video rendering synchronized with the audio response.
Inventor(s): Ping WEI of Xi’an (CN) for samsung electronics co., ltd., Changkai LI of Xi’an (CN) for samsung electronics co., ltd., Ruijie ZHANG of Xi’an (CN) for samsung electronics co., ltd., Yuxin WANG of Xi’an (CN) for samsung electronics co., ltd., Huan LI of Xi’an (CN) for samsung electronics co., ltd., Han XU of Xi’an (CN) for samsung electronics co., ltd., Ran YANG of Xi’an (CN) for samsung electronics co., ltd., Yuanyuan ZHANG of Xi’an (CN) for samsung electronics co., ltd.
IPC Code(s): G06V10/764
CPC Code(s): G06V10/764
Abstract: a processor-implemented method including extracting initial feature maps from respective images extracted from a video, wherein the extracting of the initial features maps is performed using a transformer, generating a target feature map by fusing the initial feature maps using a feature fusion network including one or more layers, and identifying an object in the video based on the target feature map.
Inventor(s): Kookyeon LEE of Suwon-si (KR) for samsung electronics co., ltd., Sangbeom NAM of Suwon-si (KR) for samsung electronics co., ltd., Jaemyeon LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06V20/20, G06T7/00, G06T7/11, G06T7/73, G06V10/40
CPC Code(s): G06V20/20
Abstract: an electronic device includes a camera, a communication circuit, memory storing one or more computer programs, and at least one processor. the one or more computer programs include computer-executable instructions that, when executed by the one or more processors, cause the electronic device to obtain information on a second image comprising a plurality of visual objects and changed from a first image, transmit, to a server, the information on the second image, receive information on a three-dimensional (3d) model for a space comprising the plurality of external objects and information on a reference image, obtain a third image by removing, from the second image, at least one visual object among the plurality of visual objects, identify at least one feature point based on a comparison between the reference image and the third image, identify a pose of a virtual camera, and identify content superimposed on the first image.
Inventor(s): Yiwen YANG of Guangzhou (CN) for samsung electronics co., ltd., Jianxing Liang of Guangzhou (CN) for samsung electronics co., ltd., Jie Zhang of Guangzhou (CN) for samsung electronics co., ltd., Cheng Chen of Guangzhou (CN) for samsung electronics co., ltd., Meng Wang of Guangzhou (CN) for samsung electronics co., ltd., Yingjie Liang of Guangzhou (CN) for samsung electronics co., ltd., Wangqi Li of Guangzhou (CN) for samsung electronics co., ltd.
IPC Code(s): G06V30/24, G06V30/14, G06V30/148, G06V30/19, G06V30/30
CPC Code(s): G06V30/24
Abstract: a picture processing method performed by an electronic device, includes: acquiring a target picture; performing region type detection and character recognition on the target picture by combining a target type detection technology and an optical character recognition technology, determining a target region to be occluded from the target picture based on a result of the region type detection and a result of the character recognition, and occluding the target region in the target picture.
Inventor(s): Jaewoong LEE of Suwon-si (KR) for samsung electronics co., ltd., Yoongoo NAM of Suwon-si (KR) for samsung electronics co., ltd., Kiseung HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G07C5/08, G06F1/3231
CPC Code(s): G07C5/0866
Abstract: an electronic device and operation method thereof for controlling a black box mounted in a vehicle are provided. the electronic device includes determining an operating mode of the black box to be a sleep mode in a state that an engine of the vehicle is turned off, transmitting, by using an ultra-wideband (uwb) communication module, a uwb signal to an object located in a vicinity of the vehicle and receiving a uwb signal from the object, identifying, based on the received uwb signal, whether the object is a device of a driver of the vehicle, and determining, based on a result of the identifying, whether to switch the operating mode of the black box from the sleep mode to an activation mode.
Inventor(s): Youngrog KIM of Suwon-si (KR) for samsung electronics co., ltd., Kibeom KIM of Suwon-si (KR) for samsung electronics co., ltd., Junwoo CHOI of Suwon-si (KR) for samsung electronics co., ltd., Myunghoon KWAK of Suwon-si (KR) for samsung electronics co., ltd., Jookwan LEE of Suwon-si (KR) for samsung electronics co., ltd., Jihea PARK of Suwon-si (KR) for samsung electronics co., ltd., Yangwook KIM of Suwon-si (KR) for samsung electronics co., ltd., Junghyeob LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G09G3/00, G01K13/00, G06F3/01, G06F3/04845, G06F3/0488, G06F3/16
CPC Code(s): G09G3/035
Abstract: disclosed is an electronic device comprising: a sensor configured to measure a temperature of the electronic device; a flexible display wherein an area of the flexible display visible to the outside can be changed; a memory storing executable instructions; and at least one processor, comprising processing circuitry configured to access the memory and execute the instructions, wherein at least one processor, individually and/or collectively, is configured to: identify a first input for changing the size of the visible area of the flexible display, identify the temperature of the electronic device via the sensor based on the identification of the first input, and identify change conditions of the size of the flexible display based on the identified temperature.
Inventor(s): Chansik BOK of Suwon-si (KR) for samsung electronics co., ltd., Jihun PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G10L15/00, G10L13/08, G10L15/04, G10L15/22, G10L15/26
CPC Code(s): G10L15/005
Abstract: an electronic apparatus including a memory configured to store first voice recognition information related to a first language and second voice recognition information related to a second language, and a processor to obtain a first text corresponding to a user voice that is received on the basis of first voice recognition information, based on an entity name being included in the user voice according to the obtained first text, identify a segment in the user voice in which the entity name is included. the processor is to obtain a second text corresponding to the identified segment of the user voice on the basis of the second voice recognition information, and obtain control information corresponding to the user voice on the basis of the first text and the second text.
Inventor(s): Pascal M. Brunet of Pasadena CA (US) for samsung electronics co., ltd.
IPC Code(s): G10L21/038
CPC Code(s): G10L21/038
Abstract: one embodiment provides a computer-implemented method that includes accessing an artificial intelligence model trained for a filterbank based on a control gain of the filterbank and a resulting frequency response gain. based on a target frequency response gain inputted into the trained artificial intelligence model, a control gain is applicable to a filter in the filterbank is outputted. the target frequency response gain is obtained at a center frequency of the filter in the filterbank.
Inventor(s): Jiyoung KANG of Suwon-si (KR) for samsung electronics co., ltd., Sojin KIM of Suwon-si (KR) for samsung electronics co., ltd., Kyunghwa SEO of Suwon-si (KR) for samsung electronics co., ltd., Yeongjune CHOI of Suwon-si (KR) for samsung electronics co., ltd., Sunho KIM of Suwon-si (KR) for samsung electronics co., ltd., Jisu KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11B27/34, G06F3/04842, G06F3/04845, G11B27/034
CPC Code(s): G11B27/34
Abstract: an electronic device is provided. the electronic device includes a display, memory storing one or more computer programs, and one or more processors communicatively coupled to the display and the memory. the one or more computer programs include computer-executable instructions that, when executed by the one or more processors, cause the electronic device to receive a request for changing content acquired based on a shooting input, in response to receiving the request, identify whether the contents are synchronized based on metadata of the content while in a first state of having identified that the contents are synchronized, display a first screen comprising a visual object for receiving a first time section to be used to segment all of the synchronized contents in the display, and while in a second state different from the first state, display a second screen for receiving a second time section to be used to divide any one of the contents in the display, independently to the visual object.
Inventor(s): Youngwoo PARK of Suwon-si (KR) for samsung electronics co., ltd., Tongsung KIM of Suwon-si (KR) for samsung electronics co., ltd., Youngmin KIM of Suwon-si (KR) for samsung electronics co., ltd., Seungjin PARK of Suwon-si (KR) for samsung electronics co., ltd., Seunghoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Chaekang LIM of Suwon-si (KR) for samsung electronics co., ltd., Youngchul CHO of Suwon-si (KR) for samsung electronics co., ltd., Youngdon CHOI of Suwon-si (KR) for samsung electronics co., ltd., Junghwan CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C7/10, H03F3/45, H03K5/24, H03M1/06
CPC Code(s): G11C7/1048
Abstract: a data converter including an autozeroing circuit including a plurality of gain circuits having a first amplification circuit and a first capacitor connected to the first amplification circuit, the first amplification circuit performing a switch feedthrough offset cancellation operation of storing an offset voltage of the autozeroing circuit in the capacitor through a switch, a comparator circuit including a first input terminal and a second input terminal, the comparator circuit comparing a first input terminal voltage level of the first input terminal with a second input terminal voltage level of the second input terminal, a first switch unit connected between the autozeroing circuit and the comparator circuit, the first switch disconnecting the autozeroing circuit from the comparator circuit during the switch feedthrough offset cancellation operation of the autozeroing circuit, and a second switch unit connected between a first input signal line and a second input signal line.
Inventor(s): Jongmin BANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C7/10
CPC Code(s): G11C7/1048
Abstract: provided is a memory device including a temperature to code (t2c) converter configured to obtain temperature data, to obtain specification voltage data, to determine a calibration code corresponding to the obtained temperature and specification voltage data, and configured to transmit information about the determined calibration code to a code generator, the code generator configured to transmit the generated calibration code to a pull-down/up set circuit, the pull-down/up set circuit configured to determine opening and closing of a plurality of transistors to correspond to the calibration code received from the code generator, and configured to form a pull-down/up impedance, and a comparator configured to compare a magnitude of a first input voltage and the impedance of an on-die termination (odt) circuit with a magnitude of a second input voltage and configured to transmit a calibration code change signal to the code generator based on a result of the voltage comparison.
Inventor(s): Bumsoo LEE of Suwon-si (KR) for samsung electronics co., ltd., Youngtaek CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C7/22
CPC Code(s): G11C7/22
Abstract: provided are a zq calibration circuit and a zq calibration method. the zq calibration circuit includes: a first calibration circuit; and a second calibration circuit sharing a first zq voltage with the first calibration circuit, wherein the first zq voltage is generated from a zq pad connected to an external resistor. the first calibration circuit includes: a first comparator; a second comparator; a first pull-up counter; a first pull-up driver; and a first switch electrically interconnecting the first pull-up counter. the second calibration circuit includes: a third comparator; a fourth comparator; a second pull-up counter; a second pull-up driver; and a second switch connected to the second pull-up counter and turned on based on a second logic level of the clock signal to electrically interconnect the second pull-up counter and the second pull-up driver.
Inventor(s): Ho-Youn KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C11/406, G11C7/10
CPC Code(s): G11C11/40615
Abstract: a row hammer control method and a memory device are provided. the memory device monitors the row hammer address(es) having the number of accesses equal to or more than a predetermined number of times or having a higher number of accesses as compared with other access addresses during the first row hammer monitoring time frame and malicious row hammer address(es) accessed at random sampling time points during the second row hammer monitoring time frame and being the same as the row hammer address(es), notifies a memory controller of the malicious row hammer address(es) when the number of malicious row hammer addresses exceeds a threshold value, and causes a target refresh a memory cell row physically adjacent to a memory cell row corresponding to the malicious row hammer address(es) to be performed.
Inventor(s): Soo Bong CHANG of Incheon (KR) for samsung electronics co., ltd., Young-Il LIM of Suwon-si (KR) for samsung electronics co., ltd., Bok-Yeon WON of Namyangju-si (KR) for samsung electronics co., ltd., Seok Jae LEE of Gwangmyeong-si (KR) for samsung electronics co., ltd., Dong Geon KIM of Suwon-si (KR) for samsung electronics co., ltd., Myeong Sik RYU of Anyang-si (KR) for samsung electronics co., ltd., In Seok BAEK of Suwon-si (KR) for samsung electronics co., ltd., Kyoung Min KIM of Namyangju-si (KR) for samsung electronics co., ltd., Sang Wook PARK of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C11/4091, G11C11/4094
CPC Code(s): G11C11/4091
Abstract: a bitline sense amplifier including: an amplifier which is connected between a first sensing bitline and a second sensing bitline, and detects and amplifies a voltage difference between a first bitline and a second bitline in response to a first control signal and a second control signal; and an equalizer which is connected between a first supply line through which the first control signal is supplied and a second supply line through which the second control signal is supplied, and pre-charges the first bitline and the second bitline with a precharge voltage in response to an equalizing control signal, wherein the equalizer includes an equalizing enable transistor in which a source terminal is connected to the first supply line and performs equalizing in response to the equalizing control signal.
Inventor(s): Hyun Seo of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C11/4096, G11C11/4074, G11C11/408
CPC Code(s): G11C11/4096
Abstract: disclosed is a flash memory including first to third memory cells connected to a cell string, a first selection line configured to select the cell string, a second selection line configured to select a connection with a common source line, a first word line connected to the first memory cell and positioned adjacent to the first or second selection line, a second word line connected to the second memory cell and adjacent to the first word line, and a third word line connected to the third memory cell and positioned between the second word line and the first or second selection line. wherein during a read operation, a first recovery voltage is applied to unselected word lines when the selected word line is the second word line, and a second recovery voltage is applied to the unselected word lines when the selected word line is not the second word line.
Inventor(s): Seyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Kyunghun Kim of Suwon-si (KR) for samsung electronics co., ltd., Sunho Kim of Suwon-si (KR) for samsung electronics co., ltd., Hyungyung Kim of Suwon-si (KR) for samsung electronics co., ltd., Seungyeul Yang of Suwon-si (KR) for samsung electronics co., ltd., Gukhyon Yon of Suwon-si (KR) for samsung electronics co., ltd., Minhyun Lee of Suwon-si (KR) for samsung electronics co., ltd., Joonsuk Lee of Suwon-si (KR) for samsung electronics co., ltd., Seokhoon Choi of Suwon-si (KR) for samsung electronics co., ltd., Hoseok Heo of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C16/04, H01L29/16, H01L29/18, H10B43/10, H10B43/27, H10B43/35
CPC Code(s): G11C16/0483
Abstract: provided is a nonvolatile memory device. the nonvolatile memory device includes: a channel layer; a plurality of gate electrodes and a plurality of insulating layers being spaced apart from the channel layer and being alternately arranged; a charge trap layer between the channel layer and a gate electrode, and a charge tunneling layer between the channel layer and the charge trap layer.
Inventor(s): Hoseok HEO of Suwon-si (KR) for samsung electronics co., ltd., Hyungyung KIM of Suwon-si (KR) for samsung electronics co., ltd., Seungdam HYUN of Suwon-si (KR) for samsung electronics co., ltd., Kyunghun KIM of Suwon-si (KR) for samsung electronics co., ltd., Seungyeul YANG of Suwon-si (KR) for samsung electronics co., ltd., Gukhyon YON of Suwon-si (KR) for samsung electronics co., ltd., Minhyun LEE of Suwon-si (KR) for samsung electronics co., ltd., Seokhoon CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C16/04, H10B43/27
CPC Code(s): G11C16/0483
Abstract: a vertical non-volatile memory device and an electronic apparatus including the vertical non-volatile memory device are provided. the vertical non-volatile memory device includes a pillar, a channel layer surrounding a side surface of the pillar, a charge tunneling layer surrounding a side surface of the channel layer, a charge trap layer surrounding a side surface of the charge tunneling layer and including an amorphous oxynitride, a charge blocking layer surrounding a side surface of the charge trap layer, and a plurality of separation layers and a plurality of gate electrodes surrounding a side surface of the charge blocking layer and alternately arranged along the side surface of the charge blocking layer.
Inventor(s): Yohan Lee of Suwon-si (KR) for samsung electronics co., ltd., Jaeduk Yu of Suwon-si (KR) for samsung electronics co., ltd., Sangsoo Park of Suwon-si (KR) for samsung electronics co., ltd., Jonghoon Park of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C16/08, G11C16/04, G11C16/10, G11C16/12
CPC Code(s): G11C16/08
Abstract: a method of operating a memory device, the method includes applying a pass voltage to a plurality of word lines during a word line setup period, applying an on-voltage to an unselected ground select line at a first time point during the word line setup period, increasing a voltage of the plurality of word lines by applying a pre-charge voltage to the common source line at a second time point during the word line setup period, applying an off-voltage to the unselected ground select line at a third time point during the word line setup period, and applying a ground voltage to the common source line at a fourth time point during the word line setup period.
Inventor(s): Minji CHO of Suwon-si (KR) for samsung electronics co., ltd., Jisang LEE of Suwon-si (KR) for samsung electronics co., ltd., Sehwan PARK of Suwon-si (KR) for samsung electronics co., ltd., Jinyoung KIM of Suwon-si (KR) for samsung electronics co., ltd., Joonsuc JANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C16/26, G11C16/04, G11C16/08
CPC Code(s): G11C16/26
Abstract: disclosed is a method of operating a memory device including a memory cell array. the memory cell array includes a plurality of memory cells and a plurality of word lines connected to the plurality of memory cells. the method includes performing an additional read operation on the plurality of memory cells by adjusting a voltage level applied to a selected word line wlconnected to memory cells to be additionally read for improvements in memory cell sensing characteristics and a voltage level applied to a plurality of unselected word lines wl, and performing a main read operation on the plurality of memory cells by adjusting a voltage level applied to at least one first word line among the plurality of unselected word lines wlto be different from a voltage level applied to the at least one first word line in the additional read operation.
Inventor(s): Jaeduk YU of Suwon-si (KR) for samsung electronics co., ltd., Jonghoon PARK of Suwon-si (KR) for samsung electronics co., ltd., Yohan LEE of Suwon-si (KR) for samsung electronics co., ltd., Sangsoo PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C16/26, G11C16/04, G11C16/08
CPC Code(s): G11C16/26
Abstract: provided is an operating method of a nonvolatile memory device. the operating method includes receiving a read command, increasing a voltage applied to a plurality of unselected ground selection lines from an off voltage to an on voltage during a word line setup period, applying a first voltage to a first selected ground selection line corresponding to a first process characteristic, until a first time in the word line setup period, applying a second voltage to the first selected ground selection line after the first time in the word line setup period, applying the first voltage to a second selected ground selection line corresponding to a second process characteristic, until a second time earlier than the first time in the word line setup period, and applying the second voltage to the second selected ground selection line after the second time in the word line setup period.
Inventor(s): Chihyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Junehong PARK of Suwon-si (KR) for samsung electronics co., ltd., Jayang YOON of Suwon-si (KR) for samsung electronics co., ltd., Chiweon YOON of Suwon-si (KR) for samsung electronics co., ltd., Hyeongdo CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C16/34, G11C16/10, G11C16/26, G11C16/30
CPC Code(s): G11C16/3427
Abstract: in a method of operating a memory device, a first operation is performed on a memory block by applying first driving voltages to a plurality of wordlines. after the first operation is completed, a first recovery operation in which the first driving voltages applied to the plurality of wordlines are discharged is performed. after the first recovery operation is completed, a second operation is performed on the memory block by applying second driving voltages to the plurality of wordlines. in the first recovery operation, first charges among a plurality of charges stored by the first driving voltages are stored in a charge recycling memory block connected to at least one charge recycling wordline. in the second operation, the second driving voltages are applied to the plurality of wordlines using the first charges stored in the charge recycling memory block.
Inventor(s): Jongcheol Kim of Suwon-si (KR) for samsung electronics co., ltd., Taeyoung Oh of Suwon-si (KR) for samsung electronics co., ltd., Hyongryol Hwang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C29/00
CPC Code(s): G11C29/76
Abstract: a semiconductor memory device includes a plurality of memory cells partitioned into a plurality of row blocks that are each associated with at least one respective row block identity bit within a portion of a row address. a row decoder is provided, which includes a repair controller having a plurality of fuse boxes therein that correspond to respective ones of the plurality of row blocks and include a first fuse box configured to store a first defective address. the repair controller is configured to: (i) activate a first redundancy word-line, which replaces a first defective word-line designated by the first defective address, in response to comparing a first access address with the first defective address output from the first fuse box, during a first mode, and (ii) activate a second redundancy word-line, which replaces a first edge word-line designated by the first access address, in response to comparing the first access address with a first reset address output from the first fuse box, during a second mode.
Inventor(s): Hyogil KIM of Suwon-si (KR) for samsung electronics co., ltd., Intaek OH of Suwon-si (KR) for samsung electronics co., ltd., Sung YOO of Suwon-si (KR) for samsung electronics co., ltd., Donghyun LEE of Suwon-si (KR) for samsung electronics co., ltd., Sunmin LEE of Suwon-si (KR) for samsung electronics co., ltd., Sunghwan CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G16H40/60, G16H20/70
CPC Code(s): G16H40/60
Abstract: an electronic device includes a display, at least one sensor, memory storing one or more computer programs and one or more processors communicatively coupled to the display, the at least one sensor and the memory. the one or more computer programs include computer-executable instructions that, when executed by the one or more processors, cause the electronic device to display a first visual object for guiding a first activity identified based on first data obtained from the electronic device in a first designated time interval, superimposed on a screen including time information in a second designated time interval, and, after displaying the first visual object in the second designated time interval, display a second visual object for guiding a second activity distinct from the first activity, identified based on second data obtained in a third designated time interval including the second designated time interval, superimposed on the screen.
Inventor(s): Kang In KIM of Suwon-si (KR) for samsung electronics co., ltd., Si Nyeon KIM of Suwon-si (KR) for samsung electronics co., ltd., Jiho PARK of Suwon-si (KR) for samsung electronics co., ltd., Youngwoo SON of Suwon-si (KR) for samsung electronics co., ltd., Ji-Eun LEE of Suwon-si (KR) for samsung electronics co., ltd., Young-Seung CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/033, H01L21/308, H01L21/311, H01L29/423, H01L29/66
CPC Code(s): H01L21/0337
Abstract: a method of fabricating a semiconductor device may include forming an active pattern on a substrate, sequentially forming on the substrate a base mask, a first mask layer, a first capping layer, a second mask layer, a second capping layer, a third mask layer, a third capping layer, a fourth mask layer, and a fourth capping layer, forming first spacers, forming second spacers, forming third spacers, and using the third spacers as a mask to pattern the first mask layer and the first capping layer. forming the third spacers may include forming a spacer layer to completely fill a space between the sidewalls of patterns of the patterned second mask layer.
Inventor(s): Minseock CHANG of Suwon-si (KR) for samsung electronics co., ltd., Kunho KWAK of Suwon-si (KR) for samsung electronics co., ltd., Kibong ROH of Suwon-si (KR) for samsung electronics co., ltd., Sangyong LEE of Suwon-si (KR) for samsung electronics co., ltd., Jinyoung LEE of Suwon-si (KR) for samsung electronics co., ltd., Kyungjin LIM of Suwon-si (KR) for samsung electronics co., ltd., Jaehong KWON of Suwon-si (KR) for samsung electronics co., ltd., Inki HONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/67, B65B11/58, B65B51/00, B65B57/00
CPC Code(s): H01L21/67
Abstract: a method of transporting a semiconductor is provided and includes: providing an accommodation container accommodating a wafer and including nitrogen gas to a packaging chamber; performing, in the packaging chamber, a first packaging on the accommodation container by packaging the accommodation container with vinyl; performing a second packaging on the accommodation container, on which the first packaging has been performed, by packaging the accommodation container with a logistics bag; transporting the accommodation container to a standby chamber and standing by the accommodation container in the standby chamber; and transporting the accommodation container that was in standby in the standby chamber by using a transporter in the transport chamber. a temperature of the standby chamber, in which the accommodation container is in standby, is maintained in a range of 18� c. to 23.5� c., and a humidity of the standby chamber is maintained in a range of 0% to 45%.
Inventor(s): Gooyoung Kim of Suwon-si (KR) for samsung electronics co., ltd., Youngseon Moon of Suwon-si (KR) for samsung electronics co., ltd., Myoungho Son of Suwon-si (KR) for samsung electronics co., ltd., Jueun Hwang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/66, G01R31/28, H01L21/67
CPC Code(s): H01L22/12
Abstract: a device for sorting semiconductor chips with potential failure risk includes a memory and a processor that generates a test result map and a distance map from an inspection result of a wafer, calculates a potential failure risk value of a target semiconductor chip that is determined as an inspection pass, based on the test result map and the distance map, and sorts the target semiconductor chip with potential failure risk based on the potential failure risk value.
Inventor(s): Inbeom YIM of Suwon-si (KR) for samsung electronics co., ltd., Jeongjin LEE of Suwon-si (KR) for samsung electronics co., ltd., Seungyoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Chan HWANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/66, G03F1/70, H01L21/027, H01L21/3213
CPC Code(s): H01L22/20
Abstract: the method including forming a first photoresist (pr) pattern by exposing first field areas of a first pr layer, forming a second pr pattern by exposing first top field areas and first bottom field areas of a second pr layer, measuring a first top intra-field overlay for the first top field areas and a first bottom intra-field overlay for the first bottom field areas, and determining a top intra-field correction parameter and a bottom intra-field correction parameter based on the first top intra-field overlay and the first bottom intra-field overlay, respectively, may be provided.
Inventor(s): Sangwon Park of Suwon-si (KR) for samsung electronics co., ltd., Seunghak Park of Suwon-si (KR) for samsung electronics co., ltd., Byeonghwan Son of Suwon-si (KR) for samsung electronics co., ltd., Ayeong Cha of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/66, G01B11/06, H01L21/67
CPC Code(s): H01L22/26
Abstract: a method of manufacturing a device includes forming a first layer on a first substrate, the first layer for measuring a thickness thereof; irradiating the first layer with first light having a first wavelength that passes into the first layer; sensing first reflected light reflected from a bottom surface of the first layer; irradiating the first layer with second light having a second wavelength shorter than the first wavelength that reflects from the first layer; sensing second reflected light reflected from an upper surface of the first layer; obtaining first data corresponding to a first positional coordinate in a vertical direction of the bottom surface of the first layer from the first reflected light; obtaining second data corresponding to a second positional coordinate in the vertical direction of the upper surface of the first layer from the second reflected light; and obtaining skew data representing a thickness of the first layer using the first and second data.
Inventor(s): Chulhee JEON of Suwon-si (KR) for samsung electronics co., ltd., Sungho PARK of Suwon-si (KR) for samsung electronics co., ltd., Younggu KANG of Suwon-si (KR) for samsung electronics co., ltd., Inho LIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/66, G01R31/28, H01L23/58
CPC Code(s): H01L22/34
Abstract: a semiconductor device includes a semiconductor die, a chip guard ring, a first crack detection structure, a second crack detection structure and a detection controller. the semiconductor die includes a central region in which a semiconductor integrated circuit is arranged and an external region surrounding the central region. the semiconductor device may accelerate a progress of a crack occurring around the first crack detection structure by applying a first power and a second power having a voltage level difference to the first crack detection structure and the second crack detection structure, respectively, in a first phase, may apply a test input signal to the first crack detection structure in a second phase and may determine whether a progressive crack occurs in the central region based on whether a test output signal responding to the test input signal is detected in the second crack detection structure, in the second phase.
Inventor(s): Sunjae KIM of Seoul (KR) for samsung electronics co., ltd., Eunsil KANG of Suwon-si (KR) for samsung electronics co., ltd., Daehyun KIM of Seoul (KR) for samsung electronics co., ltd., Sunkyoung SEO of Cheonan-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/31, H01L23/00, H01L23/29, H01L23/498, H01L25/065, H01L25/18, H01L21/56
CPC Code(s): H01L23/3192
Abstract: a semiconductor package includes a first semiconductor chip on a wiring structure, a plurality of internal terminals between the wiring structure and the first semiconductor chip; a high thermal conductivity layer is between the wiring structure and the first semiconductor chip; and an encapsulator on the high thermal conductivity layer and contacting the second semiconductor chip. sidewalls of at least the wiring structure and the encapsulator are substantially coplanar.
Inventor(s): Hyunsoo CHUNG of Suwon-si (KR) for samsung electronics co., ltd., Dae-Woo KIM of Suwon-si (KR) for samsung electronics co., ltd., Young Lyong KIM of Suwon-si (KR) for samsung electronics co., ltd., Inhyo HWANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/48, H01L21/48, H01L23/29, H01L23/538
CPC Code(s): H01L23/481
Abstract: a semiconductor package according to at least one embodiment may include: a first chiplet and a second chiplet disposed side by side with each other, wherein each of the first chiplet and the second comprises a substrate including an active side and a back side opposite to the active side; a back side power distribution network (bspdn) in the back side of the substrate; and a third chiplet electrically coupling the first chiplet and the second chiplet to each other above the first chiplet and the second chiplet; and a fourth chiplet and a fifth chiplet disposed side by side with the third chiplet.
20240222241. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Ji Hyun LEE of Suwon-si (KR) for samsung electronics co., ltd., Han Sung RYU of Suwon-si (KR) for samsung electronics co., ltd., Jun Ho LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L23/538, H01L25/10
CPC Code(s): H01L23/49816
Abstract: a semiconductor package includes a first substrate. solder balls are disposed on a lower surface of the first substrate. a first semiconductor chip is on an upper surface of the first substrate. the solder balls include a first ball disposed in a first direction from a center of the first substrate and spaced apart from the center by a first distance. a second ball is disposed in a third direction from the center between the first and second directions and is spaced apart from the center by a second distance less than or equal to the first distance. a first pitch between the first ball and a first adjacent ball disposed immediately to an outer side in the first direction is less than a second pitch between the first ball and a second adjacent ball disposed immediately adjacent to an inner side in the first direction.
20240222244. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): JONGYOUN KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L23/00, H01L25/10
CPC Code(s): H01L23/49822
Abstract: a semiconductor package includes a first redistribution layer, a first semiconductor chip on the first redistribution layer, a mold layer covering a side surface of the first semiconductor chip and a top surface of the first redistribution layer and having an upper surface coplanar with an upper surface of the first semiconductor chip, a metal layer on the first semiconductor chip and the mold layer to be in contact with upper surfaces of the mold layer and the first semiconductor chip, and a second redistribution layer on the metal layer.
Inventor(s): JIYOUNG LEE of Suwon-si (KR) for samsung electronics co., ltd., JUNHYEONG PARK of Suwon-si (KR) for samsung electronics co., ltd., JIHYE SHIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L21/48, H01L23/00, H01L25/065, H01L25/10, H01L25/18
CPC Code(s): H01L23/49838
Abstract: disclosed are semiconductor packages and their fabrication methods. the semiconductor package comprises a first structure that includes a conductive pattern, a second structure spaced apart from the first structure, a pillar structure between the first structure and the second structure and electrically connecting the first structure to the second structure, and a semiconductor chip between the first structure and the second structure. the pillar structure includes an inner pillar on the conductive pattern and an outer pillar that surrounds the inner pillar. the outer pillar is in contact with a sidewall and a top surface of the inner pillar.
Inventor(s): Byoungil LEE of Suwon-si (KR) for samsung electronics co., ltd., Seungbeom KO of Suwon-si (KR) for samsung electronics co., ltd., Jongyoon CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/522, G11C16/04, H01L23/528, H01L25/065, H10B41/10, H10B41/27, H10B41/35, H10B43/10, H10B43/27, H10B43/35, H10B80/00
CPC Code(s): H01L23/5226
Abstract: a semiconductor device comprising: a stack structure on a substrate including gate electrodes and insulating layers alternately stacked; a first through via extending through the stack structure; and a second through via spaced apart from the first through via, wherein the second through via extends through the stack structure, wherein the second through via is electrically connected to a first gate electrode that is farthest one among the gate electrodes from the substrate in the vertical direction, wherein a gate pad is on and contacts the first gate electrode, and the first through via includes: a vertical pattern; first and second protrusions that protrude from the vertical pattern, wherein the first protrusion overlaps a portion of the first gate electrode in the horizontal direction; and the second protrusion overlaps a second gate electrode in the horizontal direction, wherein the second gate electrode is spaced apart from the second through via.
20240222273. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): HYUN SOO CHUNG of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., DAE-WOO KIM of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., WON-YOUNG KIM of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/528, H01L23/00, H01L23/31, H01L23/48, H01L23/522, H01L25/065, H10B80/00
CPC Code(s): H01L23/528
Abstract: a semiconductor package is provided. the semiconductor package comprises a first semiconductor chip including the first signal wiring structure disposed in an upper surface thereof, and a first power wiring structure disposed in a lower surface thereof, a second semiconductor chip disposed on the first signal wiring structure and including a second signal wiring structure, a second power wiring structure disposed on the second semiconductor chip and a first power connection pillar connecting the first power wiring structure and the second power wiring structure to each other.
Inventor(s): Sangsoo LEE of Suwon-si (KR) for samsung electronics co., ltd., Hyung Joon KIM of Suwon-si (KR) for samsung electronics co., ltd., Eunhyun KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/528, H01L23/522, H01L25/065, H10B41/10, H10B41/27, H10B41/35, H10B41/40, H10B43/10, H10B43/27, H10B43/35, H10B43/40, H10B80/00
CPC Code(s): H01L23/5283
Abstract: non-volatile memory devices, methods for fabricating the same, and/or electronic systems including the same may be provided. a non-volatile memory device may include a substrate, a gate electrode layer, an electrode pad, a channel structure, a vertical through contact, and a separation insulation pattern.
Inventor(s): MyungDo CHO of Suwon-si (KR) for samsung electronics co., ltd., Youngchan KO of Suwon-si (KR) for samsung electronics co., ltd., Gyeongho KIM of Suwon-si (KR) for samsung electronics co., ltd., Byung Ho KIM of Suwon-si (KR) for samsung electronics co., ltd., Yongkoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Jeongho LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/538, H01L21/48, H01L21/56, H01L23/00, H01L23/31, H01L23/498, H01L25/065
CPC Code(s): H01L23/5381
Abstract: a semiconductor package may include: a first redistribution layer structure; a bridge structure on the first redistribution layer structure; a plurality of conductive pillars on the first redistribution layer structure and side by side with the bridge structure; an encapsulant molding the bridge structure and the plurality of conductive pillars on the first redistribution layer structure; a second redistribution layer structure on the encapsulant, wherein a region of the second redistribution layer structure on the bridge structure is defined as a first region and a region other than the first region is defined as a second region; and a plurality of bonding pads at the first region. a vertical thickness of the first region may be smaller than a vertical thickness of the second region.
Inventor(s): Bongju Cho of Suwon-si (KR) for samsung electronics co., ltd., Jingu Kim of Suwon-si (KR) for samsung electronics co., ltd., Yieok Kwon of Suwon-si (KR) for samsung electronics co., ltd., Wooyoung Kim of Suwon-si (KR) for samsung electronics co., ltd., Gongje Lee of Suwon-si (KR) for samsung electronics co., ltd., Sangkyu Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/538, H01L23/00, H01L23/10
CPC Code(s): H01L23/5386
Abstract: semiconductor package includes lower redistribution layer providing first redistribution wirings and having first region and second region surrounding the first region, semiconductor chip disposed on the first region and electrically connected to the first redistribution wirings, sealing member covering the semiconductor chip on the lower redistribution layer, plurality of vertical conductive structures penetrating the sealing member on the second region and electrically connected to the first redistribution wirings, upper redistribution layer disposed on the sealing member and having second redistribution wirings electrically connected to the plurality of vertical conductive structures and plurality of bonding pads. the vertical conductive structures are bonded to the bonding pad and extend vertically from the plurality of bonding pads. the vertical conductive structure includes first to third conductive pillar portions sequentially stacked. the first conductive pillar portion has first length and the third conductive pillar portion has third length greater than the first length.
Inventor(s): Hwan Young CHOI of Suwon-si (KR) for samsung electronics co., ltd., Seok Hyun Lee of Suwon-si (KR) for samsung electronics co., ltd., Cheol Kim of Suwon-si (KR) for samsung electronics co., ltd., Seok Geun Ahn of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00, H01L23/48, H01L23/522
CPC Code(s): H01L24/08
Abstract: a semiconductor package comprises a first semiconductor chip and a second semiconductor chip. the first semiconductor chip includes a first substrate, a first semiconductor device layer disposed on the first substrate, a first chip wiring layer disposed on the first semiconductor device layer, and a first bonding pad directly connected to the first chip wiring layer and that includes a first dishing formed thereon. the second semiconductor chip includes a second substrate, a first through-via that penetrates through the second substrate, and a second bonding pad directly connected to the first through-via and that includes a second dishing formed thereon. the first semiconductor chip and the second semiconductor chip are bonded to each other and the first bonding pad and the second bonding pad face each other, and a gold bonding layer fills the first dishing of the first bonding pad and the second dishing of the second bonding pad.
Inventor(s): Daehyun KIM of Suwon-si (KR) for samsung electronics co., ltd., KUNSIL LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00, H01L23/498
CPC Code(s): H01L24/14
Abstract: disclosed are semiconductor packages and their fabrication methods. the semiconductor package comprises a first substrate having first pads on a first surface of the first substrate, a second substrate on the first substrate and having a plurality of second pads on a second surface of the second substrate, and connection terminals between the first substrate and the second substrate and correspondingly coupling the first pad to the second pads. each of the connection terminals has a first major axis and a first minor axis that are parallel to the first surface of the first substrate and are orthogonal to each other. when viewed in a plan view, the first minor axis of each of the connection terminals is directed toward a center of the first substrate.
20240222309. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Okgyeong Park of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00, H01L23/31, H01L23/498
CPC Code(s): H01L24/29
Abstract: the inventive concept provides a semiconductor package including a substrate including a passivation layer, a semiconductor chip mounted on the substrate, an underfill material layer between the semiconductor chip and the substrate, and a dam structure on the substrate and surrounding the semiconductor chip, wherein a lower portion of the dam structure is in contact with the passivation layer and is formed of a material that is the same as a material forming the passivation layer, and an upper surface of the dam structure includes a first segment at a first vertical level and a second segment at a second vertical level, wherein the second vertical level is different from the first vertical level.
Inventor(s): Hyunjun NOH of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L23/00, H01L23/31, H01L23/498
CPC Code(s): H01L25/0652
Abstract: a semiconductor package includes a package substrate, first and second spacer chips attached to an upper surface of the package substrate and spaced apart from each other, a first semiconductor chip mounted on the upper surface of the package substrate and disposed between the first and second spacer chips, a plurality of second semiconductor chips sequentially stacked on the first and second spacer chips by adhesive films to cover the first semiconductor chip, and a sealing member on the package substrate and covering the first and second spacer chips, the first semiconductor chip, and the plurality of second semiconductor chips. at least a portion of the first spacer chip protrudes from one side of a lowermost second semiconductor chip among the plurality of second semiconductor chips, and the first spacer chip includes a groove at an upper surface of the protruded portion.
20240222330. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Youngjun YOON of Suwon-si (KR) for samsung electronics co., ltd., Yunseok CHOI of Suwon-si (KR) for samsung electronics co., ltd., Jongpa HONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L23/00
CPC Code(s): H01L25/0657
Abstract: a semiconductor package includes a first semiconductor chip including first front connection pads on a first front surface, first rear connection pads and dummy pads on a first rear surface, and through-electrodes. the package includes a second semiconductor chip including second front connection pads and test pads on a second front surface, and a protective layer including openings exposing at least a portion of the second front connection pads and the test pads. the package includes bump structures electrically connecting the first rear connection pads and the second front connection pads, and an adhesive film surrounding at least a portion of each of the first rear connection pads, the dummy pads, and the bump structures. the dummy pads overlap the test pads in a direction perpendicular to the first rear surface, and a height of the dummy pads is greater than a height of the first rear connection pads.
Inventor(s): JIN-WOO PARK of Suwon-si (KR) for samsung electronics co., ltd., UN-BYOUNG KANG of Suwon-si (KR) for samsung electronics co., ltd., CHUNGSUN LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L23/00
CPC Code(s): H01L25/0657
Abstract: a semiconductor package includes a buffer chip configured to include a first dummy region and a second dummy region and to include first pads on rear surfaces of substrates of the first and second dummy regions; and a first core chip stacked at an upper portion of the buffer to include a bump coupled to the first pad and positioned on an entire surface of the substrate, wherein the first pad is positioned in a line shape having a length including at least two bumps.
Inventor(s): Myung Kee Chung of Hwaseong-si (KR) for samsung electronics co., ltd., Hyun Soo Chung of Hwaseong-si (KR) for samsung electronics co., ltd., Tae Won Yoo of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L25/00
CPC Code(s): H01L25/0657
Abstract: a semiconductor package including a first semiconductor chip, a second semiconductor chip disposed on the first semiconductor chip, and a third semiconductor chip disposed on the second semiconductor chip. a first pad is disposed on a top surface of the second semiconductor chip, and includes a first portion and a second portion protruding in a vertical direction from the first portion. a width of the first portion in a first horizontal direction is greater than a width of the second portion in the first horizontal direction. a second pad is disposed on a bottom surface of the third semiconductor chip facing the top surface of the second semiconductor chip, and a solder ball is disposed as surrounding a sidewall of the second portion of the first pad between the first pad and the second pad.
20240222348. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Seunggeol RYU of Suwon-si (KR) for samsung electronics co., ltd., TAEHWAN KIM of Suwon-si (KR) for samsung electronics co., ltd., SHLE-GE LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/18, H01L23/00, H01L23/31, H01L23/538, H01L25/065, H10B80/00
CPC Code(s): H01L25/18
Abstract: a semiconductor package may include a first package including a first substrate, a first semiconductor chip mounted on the first substrate, and a second substrate on the first semiconductor chip, the first package having a center region, a first edge region surrounding the center region, and a second edge region surrounding the first edge region in a plan view, dummy balls disposed on the center region and the second edge region of the first package, connection terminals disposed on the first edge region of the first package, and a second package including a third substrate disposed on the dummy balls and the connection terminals and a second semiconductor chip mounted on the third substrate. the dummy balls may be in contact with the second substrate and may be spaced apart from the third substrate, and the connection terminals may be coupled to the second and third substrates.
Inventor(s): Kyoungil DO of Suwon-si (KR) for samsung electronics co., ltd., Jinwoo Jung of Suwon-si (KR) for samsung electronics co., ltd., Jooyoung Song of Suwon-si (KR) for samsung electronics co., ltd., Chanhee Jeon of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/02, H01L29/74
CPC Code(s): H01L27/0248
Abstract: provided is a device including a first clamp circuit electrically connected between a first node and a second node, and a second clamp circuit electrically connected between the second node and a third node, wherein the first clamp circuit includes a first silicon controlled rectifier (scr) including a first region of a first conductivity type electrically connected to the first node, a second region of a second conductivity type, a third region of the first conductivity type, and a fourth region of the second conductivity type electrically connected to the second node, and a first gate electrode disposed over a channel region including a junction of the second region and the third region between the first region and the fourth region.
Inventor(s): Kyoungil Do of Suwon-si (KR) for samsung electronics co., ltd., Jinwoo Jung of Suwon-si (KR) for samsung electronics co., ltd., Jooyoung Song of Suwon-si (KR) for samsung electronics co., ltd., Mijin Lee of Suwon-si (KR) for samsung electronics co., ltd., Chanhee Jeon of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/02, H02H9/04
CPC Code(s): H01L27/0262
Abstract: a device, including a first silicon controlled rectifier comprising a first anode connected to a first node, a first cathode connected to a pad, and a first gate; a second silicon controlled rectifier comprising a second anode connected to the pad, a second cathode connected to a second node, and a second gate; and a back diode forwardly connected from the second node to the first gate.
Inventor(s): Young Gwon KIM of SUWON-SI (KR) for samsung electronics co., ltd., Myung Gil KANG of SUWON-SI (KR) for samsung electronics co., ltd., Soo Jin JEONG of SUWON-SI (KR) for samsung electronics co., ltd., Dong Won KIM of SUWON-SI (KR) for samsung electronics co., ltd., Beom Jin PARK of SUWON-SI (KR) for samsung electronics co., ltd., Hong Seon YANG of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/092, H01L21/285, H01L21/8238, H01L29/06, H01L29/08, H01L29/40, H01L29/417, H01L29/423, H01L29/66, H01L29/775
CPC Code(s): H01L27/092
Abstract: a semiconductor device includes a substrate that includes a first region and a second region, a first active pattern on the first region, a first gate structure that intersects the first active pattern, a first epitaxial pattern connected to the first active pattern and includes n-type impurities, a first source/drain contact that penetrates an upper surface of the first epitaxial pattern and is connected to the first epitaxial pattern, a second active pattern on the second region, a second gate structure that intersects the second active pattern, a second epitaxial pattern connected to the second active pattern and includes p-type impurities, and a second source/drain contact that penetrates an upper surface of the second epitaxial pattern and is connected to the second epitaxial pattern. a lower surface of the first source/drain contact is lower than a lower surface of the second source/drain contact.
20240222399. IMAGE SENSOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Ingyu Baek of Suwon-si (KR) for samsung electronics co., ltd., Kwansik Kim of Suwon-si (KR) for samsung electronics co., ltd., Jungsan Kim of Suwon-si (KR) for samsung electronics co., ltd., Taemin KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
CPC Code(s): H01L27/14603
Abstract: an image sensor may include a substrate including pixels, a first transistor and a second transistor disposed on the substrate and spaced apart from each other, a first interlayer insulating layer covering the first transistor and the second transistor, a first lower electrode disposed in the first interlayer insulating layer and connected to an end portion of the first transistor, a first dielectric layer on the first lower electrode, a first upper electrode on the first dielectric layer, a second interlayer insulating layer covering the first upper electrode and the first interlayer insulating layer, and a first pillar provided to penetrate the second and first interlayer insulating layers and connected to an end portion of the second transistor.
20240222401. SEMICONDUCTOR DEVICE, IMAGE SENSOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Je-Hyung Ryu of Suwon-si (KR) for samsung electronics co., ltd., Hajin Lim of Suwon-si (KR) for samsung electronics co., ltd., Taeksoo Jeon of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146, H01L29/423
CPC Code(s): H01L27/14614
Abstract: a semiconductor device and an image sensor are disclosed. the semiconductor device includes: a gate pattern disposed on a substrate; a first interlayer insulating layer on a sidewall of the gate pattern; a second interlayer insulating layer on the gate pattern and the first interlayer insulating layer; and a first contact plug passing through the second interlayer insulating layer and the first interlayer insulating layer and being in contact with the substrate, where the first contact plug comprises a first contact part in the first interlayer insulating layer and a second contact part in the second interlayer insulating layer, a density of the first interlayer insulating layer is smaller than a density of the second interlayer insulating layer, the first contact part of the first contact plug has a first width, and the second contact part of the first contact plug has a second width smaller than the first width.
Inventor(s): Kyungho Lee of Suwon-si (KR) for samsung electronics co., ltd., Hyuk An of Seoul (KR) for samsung electronics co., ltd., Hyuk Soon Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
CPC Code(s): H01L27/14629
Abstract: an image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. an electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., n-type). at least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. a semiconductor floating diffusion (fd) region (e.g., n-type region) is provided within the semiconductor region.
20240222408. IMAGE SENSOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jonghyeon NOH of Suwon-si (KR) for samsung electronics co., ltd., Seunghwi YOO of Suwon-si (KR) for samsung electronics co., ltd., Kooktae KIM of Suwon-si (KR) for samsung electronics co., ltd., Jingyun KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
CPC Code(s): H01L27/1463
Abstract: an image sensor may include a substrate; a unit pixel region including a photoelectric conversion region; a pixel isolation trench defining the unit pixel region, and extending in a first and a second horizontal direction; and a pixel isolation structure in the pixel isolation trench, wherein the pixel isolation structure includes a dielectric layer on an inner wall of the pixel isolation trench; a first semiconductor pattern on the dielectric layer and including a first dopant; a first insulating layer on a first portion of the first semiconductor pattern overlapping the photoelectric conversion region; a second semiconductor pattern on a second portion of the first semiconductor pattern not overlapping with the photoelectric conversion region, wherein the photoelectric conversion region includes a doped region on an outer wall of the pixel isolation structure, and the doped region includes the first dopant.
Inventor(s): Bongjin SON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
CPC Code(s): H01L27/14636
Abstract: a semiconductor package includes a silicon substrate having a first surface and a second surface opposite to the first surface, the silicon substrate including an active layer on the first surface, the active layer having a through opening area and a circuit pattern area surrounding the through opening area and in which circuit patterns are provided. a through electrode penetrates the silicon substrate and has a first end portion that is exposed at the first surface of the silicon substrate on the through opening area. a redistribution wiring layer is on the first surface of the silicon substrate and includes a landing pad and redistribution wires. the landing pad is electrically connected to the first end portion of the through electrode, and the redistribution wires are electrically connected to the landing pad and the circuit patterns.
20240222421. METAL-INSULATOR-METAL CAPACITOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jihyung KIM of Suwon-si (KR) for samsung electronics co., ltd., Jeonghoon Ahn of Suwon-si (KR) for samsung electronics co., ltd., Jaehee Oh of Suwon-si (KR) for samsung electronics co., ltd., Shaofeng Ding of Suwon-si (KR) for samsung electronics co., ltd., Wonji Park of Suwon-si (KR) for samsung electronics co., ltd., Jegwan Hwang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01G4/30, H01L23/522
CPC Code(s): H01L28/65
Abstract: a metal-insulator-metal capacitor includes a first electrode disposed in a first region of an upper surface of a substrate, a second electrode covering the first electrode and extending to a second region surrounding an outer periphery of the first region, a third electrode covering the second electrode and extending to a third region surrounding an outer periphery of the second region, a first dielectric layer disposed between the first electrode and the second electrode to cover an upper surface and a side surface of the first electrode and extending to the second region, and a second dielectric layer disposed between the second electrode and the third electrode to cover an upper surface and a side surface of the second electrode and extending to the third region and in contact with the first dielectric layer.
Inventor(s): Joungeun YOO of Suwon-si (KR) for samsung electronics co., ltd., Duseop YOON of Suwon-si (KR) for samsung electronics co., ltd., Kyung-Eun BYUN of Suwon-si (KR) for samsung electronics co., ltd., Minsu SEOL of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/06, H01L29/417, H01L29/786
CPC Code(s): H01L29/0673
Abstract: a semiconductor device may include a two-dimensional (2d) material layer having semiconductor characteristics, and a source electrode, a drain electrode, and a gate electrode spaced apart from one another on the 2d material layer. at least one of the source electrode and the drain electrode may be in contact with the 2d material layer and may include an alloy layer that may be amorphous.
20240222450. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Eui Bok LEE of Suwon-si (KR) for samsung electronics co., ltd., Moon Kyun SONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/417, H01L23/48, H01L29/06, H01L29/08, H01L29/423, H01L29/775, H01L29/786
CPC Code(s): H01L29/41733
Abstract: a semiconductor device includes a fin-shaped pattern, a field insulating film covering a sidewall of the fin-shaped pattern, a source/drain pattern disposed on an upper surface of the fin-shaped pattern, a source/drain etch stop film extending along an upper surface of the field insulating film and a sidewall of the source/drain pattern, a source/drain contact connected to the source/drain pattern, a buried conductive pattern penetrating through a substrate and connected to the source/drain contact, a portion of the buried conductive pattern being disposed within the field insulating film, and a rear wiring line connected to the buried conductive pattern. the field insulating film includes a first field filling film and a first field stop film. the first field stop film is disposed between the first field filling film and the substrate. the first field stop film includes a material having etch selectivity with respect to the first field filling film.
20240222451. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Wandon Kim of Suwon-si (KR) for samsung electronics co., ltd., Jaeseoung Park of Suwon-si (KR) for samsung electronics co., ltd., Hyunwoo Kim of Suwon-si (KR) for samsung electronics co., ltd., Hyunbae Lee of Suwon-si (KR) for samsung electronics co., ltd., Jeonghyuk Yim of Suwon-si (KR) for samsung electronics co., ltd., Hyoseok Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/417, H01L29/06, H01L29/423, H01L29/775, H01L29/786
CPC Code(s): H01L29/41733
Abstract: a semiconductor device includes an active region extending in a first direction, a gate structure extending in a second direction, a source/drain region on the active region, a first contact structure connected to the source/drain region, and a second contact structure connected to the first contact structure. the second contact structure includes a first layer including a first grain and a second layer including second grains on the first layer. within the first layer, a maximum vertical distance between a lowermost end of the first grain and an uppermost end of the first grain is equal to a vertical distance between a lowermost end of the first layer and an uppermost end of the first layer. a size of the first grain is greater than a size of each of the second grains. a width of the first layer is greater than a width of the first contact structure.
20240222453. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Eui Bok LEE of Suwon-si (KR) for samsung electronics co., ltd., Rak Hwan KIM of Suwon-si (KR) for samsung electronics co., ltd., Jong Min BAEK of Suwon-si (KR) for samsung electronics co., ltd., Moon Kyun SONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/417, H01L23/528, H01L29/06, H01L29/423, H01L29/45, H01L29/775
CPC Code(s): H01L29/41766
Abstract: a semiconductor device includes an interlayer insulating film including a first surface and a second surface opposite to the first surface in a first direction; a source/drain pattern provided in the interlayer insulating film; a channel pattern adjacent to the source/drain pattern in a second direction and contacting the source/drain pattern; a front wiring provided on the first surface of the interlayer insulating film; a back wiring provided on the second surface of the interlayer insulating film; and a first connecting via contact and a second connecting via contact which are provided between the source/drain pattern and the back wiring and connected to the source/drain pattern.
Inventor(s): Jieun YUN of Suwon-si (KR) for samsung electronics co., ltd., Sunhye HWANG of Suwon-si (KR) for samsung electronics co., ltd., Gyeom KIM of Suwon-si (KR) for samsung electronics co., ltd., Ji Young PARK of Suwon-si (KR) for samsung electronics co., ltd., Sangmoon LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/66, H01L21/02, H01L29/06, H01L29/08, H01L29/161, H01L29/423, H01L29/775
CPC Code(s): H01L29/66439
Abstract: a method of manufacturing an integrated circuit device, the method including forming a structure on a substrate, a semiconductor film and an insulating film being exposed in the structure, and selectively forming a silicon germanium layer only on the semiconductor film by using a process gas, the process gas including a disilane compound having at least two chlorine atoms, a germanium element-containing gas, and hydrogen gas.
Inventor(s): Se Woung OH of Suwon-si (KR) for samsung electronics co., ltd., Hyung Dong KIM of Suwon-si (KR) for samsung electronics co., ltd., Sang Mo KOO of Suwon-si (KR) for samsung electronics co., ltd., Han Sung KIM of Suwon-si (KR) for samsung electronics co., ltd., Young Dae CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/66, H01L29/06, H01L29/40, H01L29/417, H01L29/423, H01L29/775, H01L29/786
CPC Code(s): H01L29/66439
Abstract: a method for fabricating a semiconductor device includes forming an active pattern on a substrate, forming sacrificial and semiconductor layers alternately stacked on the active pattern, forming a dummy gate and first source/drain trench on one side of the dummy gate by etching the stacked structure, forming a second source/drain trench on the active pattern by etching a sidewall of the sacrificial layer exposed to the first source/drain trench, forming a first inner spacer material layer along sidewall and bottom surfaces of the second source/drain trench, forming a second inner spacer material layer by anisotropic etching a first inner spacer material layer, and forming a third source/drain trench on the active pattern by isotropic etching.
Inventor(s): Jeeeun YANG of Suwon-si (KR) for samsung electronics co., ltd., Yongsung KIM of Suwon-si (KR) for samsung electronics co., ltd., Sangwook KIM of Suwon-si (KR) for samsung electronics co., ltd., Kwanghee LEE of Suwon-si (KR) for samsung electronics co., ltd., Moonil JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/786, H01L29/423, H10B10/00
CPC Code(s): H01L29/7869
Abstract: provided are a semiconductor device including an oxide semiconductor layer and an electronic device including the semiconductor device. the semiconductor device includes a substrate, a first electrode provided on the substrate, a second electrode provided on the first electrode, an oxide semiconductor layer provided between the first electrode and the second electrode, a gate electrode provided in a thickness direction of the oxide semiconductor layer, and a gate insulating layer provided between the oxide semiconductor layer and the gate electrode, wherein a measurement density relative to a theoretical density of the oxide semiconductor layer is about 90% or more. the oxide semiconductor layer of the semiconductor device may have a more uniform and improved film density, and may improve the reliability of the device due to the improved film density.
Inventor(s): Minsu SEOL of Suwon-si (KR) for samsung electronics co., ltd., Eunkyu LEE of Suwon-si (KR) for samsung electronics co., ltd., Junyoung KWON of Suwon-si (KR) for samsung electronics co., ltd., Kyung-Eun BYUN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/786, H01L29/06, H01L29/66, H01L29/78
CPC Code(s): H01L29/78696
Abstract: provided are a field effect transistor, a method of manufacturing the field effect transistor, and an electronic device and an electronic apparatus each including the field effect transistor. the field effect transistor includes a channel layer disposed on a substrate, a high-k gate insulating layer disposed on the channel layer, a first composite electrode layer connected to a first side of the channel layer, a second composite electrode layer connected to a second side of the channel layer, and a gate electrode layer disposed on the gate insulating layer. at least one of the first and second composite electrode layers includes a contact resistance reducing layer in contact with the channel layer and a conductive layer in contact with the contact resistance reducing layer. the conductive layer is spaced apart from the channel layer.
20240222550. SEMICONDUCTOR LIGHT EMITTING DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jungsung Kim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L33/10, H01L33/30, H01L33/52
CPC Code(s): H01L33/10
Abstract: a semiconductor light emitting device, including a light emitting structure comprising a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type which is different from the first conductivity type, and an active layer between the first semiconductor layer and the second semiconductor layer and configured to emit light having a wavelength in a range of about 620 nm to about 750 nm; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer; a capping layer on a top surface of the light emitting structure and having a first refractive index in a range of about 2.05 to about 2.58; and an encapsulation layer on the capping layer and on the light emitting structure, and having a second refractive index which is less than the first refractive index.
Inventor(s): Sungjin Lim of Suwon-si (KR) for samsung electronics co., ltd., Hwiyeol Park of Suwon-si (KR) for samsung electronics co., ltd., Jonghoon Ka of Suwon-si (KR) for samsung electronics co., ltd., Taeyoung Kim of Suwon-si (KR) for samsung electronics co., ltd., Heungchan Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01M4/62, H01M4/131, H01M4/1391, H01M4/36, H01M4/525, H01M10/052, H01M10/0562
CPC Code(s): H01M4/62
Abstract: a cathode including a cathode active material layer including a composite cathode active material particle including a core, and a coating layer disposed on at least a portion of the core, wherein the core includes a lithium transition metal oxide, and the coating layer includes a first solid electrolyte, wherein the first solid electrolyte is a halogen-containing oxide solid electrolyte, and a matrix comprising a second solid electrolyte, wherein the second solid electrolyte is a halogen-free oxide solid electrolyte, and wherein the composite cathode active material particle is disposed in the second solid electrolyte, and wherein the first solid electrolyte and the second solid electrolyte each comprise silicon and boron.
Inventor(s): Heungchan Lee of Suwon-si (KR) for samsung electronics co., ltd., Taeyoung Kim of Suwon-si (KR) for samsung electronics co., ltd., Jonghoon Ka of Suwon-si (KR) for samsung electronics co., ltd., Jeongkuk Shon of Suwon-si (KR) for samsung electronics co., ltd., Sungjin Lim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01M10/0562, H01M4/75, H01M10/6551, H01M10/6555, H01M50/434
CPC Code(s): H01M10/0562
Abstract: a multilayer ceramic battery including a cell stack including a plurality of unit cells, a first external current collector layer disposed on a first side surface of the cell stack, a second external current collector layer disposed on a second side surface of the cell stack, a case surrounding the cell stack, the first external current collector layer, and second external current collector, and a heat dissipation layer configured to dissipate heat generated from the cell stack to the outside, wherein the heat dissipation layer is disposed in a region surrounded by the case.
Inventor(s): Ryounghee Kim of Uiwang-si (KR) for samsung electronics co., ltd., Gabin Yoon of Seoul (KR) for samsung electronics co., ltd., Jusik Kim of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01M10/0562, H01M10/0525
CPC Code(s): H01M10/0562
Abstract: provided are an oxide including a compound represented by formula 1, a method of preparing the same, a solid electrolyte including the oxide, and an electrochemical device including the oxide:
Inventor(s): Ryounghee Kim of Uiwang-si (KR) for samsung electronics co., ltd., Gabin Yoon of Seoul (KR) for samsung electronics co., ltd., Jusik Kim of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01M10/0562, H01M10/0525
CPC Code(s): H01M10/0562
Abstract:
20240222735. LITHIUM BATTERY_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jusik Kim of Suwon-si (KR) for samsung electronics co., ltd., Jirae Kim of Suwon-si (KR) for samsung electronics co., ltd., Junhyeong Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01M10/615, H01M4/66, H05B3/14, H05B3/18
CPC Code(s): H01M10/615
Abstract: provided is a lithium battery including a plurality of unit cells; and one or more current collecting members, wherein each of the plurality of unit cells includes a first electrode active material layer, a second electrode active material layer, and an electrolyte layer disposed between the first electrode active material layer and the second electrode active material layer, the one or more current collecting members includes a first current collecting member disposed between a first unit cell and a second unit cell adjacent to each other, the first current collecting member includes a first surface in contact with the first unit cell, a second surface facing the first surface and in contact with the second unit cell, a first current collector, and a heating element disposed between the first surface and the second surface, wherein the heating element is spaced apart from the first unit cell and the second unit cell.
20240222848. ELECTRONIC DEVICE INCLUDING ANTENNA_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jong Hyuck LEE of Gyeonggi-do (KR) for samsung electronics co., ltd., Hae Yeon KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Se Hyun PARK of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H01Q1/24, H01Q5/321, H01Q5/335, H01Q5/50, H01Q9/42
CPC Code(s): H01Q1/243
Abstract: disclosed is an electronic device. the electronic device according to an embodiment includes an antenna element including at least a portion of a housing of the electronic device and configured to resonate in a first frequency band, a conductive plate electrically connected with the antenna element, positioned within the housing, and configured to resonate in the first frequency band or in a second frequency band higher than the first frequency band, a filter circuit electrically connected with the conductive plate and having a pass band in the second frequency band, and a conductive member electrically connected with the conductive plate through the filter circuit and configured to resonate in the second frequency band. moreover, various embodiment found through the disclosure are possible.
Inventor(s): Dongjun OH of Suwon-si (KR) for samsung electronics co., ltd., Taeik KIM of Suwon-si (KR) for samsung electronics co., ltd., Haeyeon KIM of Suwon-si (KR) for samsung electronics co., ltd., Sehyun PARK of Suwon-si (KR) for samsung electronics co., ltd., Shinho YOON of Suwon-si (KR) for samsung electronics co., ltd., Jonghyuck LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01Q1/24, H01Q5/328, H01Q5/385, H01Q21/28, H04B1/40, H04M1/02
CPC Code(s): H01Q1/243
Abstract: an electronic device according to an embodiment may include a first housing structure, a second housing structure, and a foldable housing structure for connecting the first housing structure and the second housing structure. the first housing structure and the second housing structure may include a front plate for interconnecting front surfaces with a flexible display, a rear plate which is an opposite surface to the front plate, a side member which surrounds a space between the front plate and the rear plate, and includes at least in part a conductive portion and an insulating portion, a communication circuit and at least one switch electrically connected to the communication circuit. other various embodiments are possible.
Inventor(s): Hyunsung GO of Suwon-si (KR) for samsung electronics co., ltd., Myungjin KANG of Suwon-si (KR) for samsung electronics co., ltd., Youngjun PARK of Suwon-si (KR) for samsung electronics co., ltd., Hyungjoon YU of Suwon-si (KR) for samsung electronics co., ltd., Youngkwon LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01Q13/10, H04B17/318
CPC Code(s): H01Q13/103
Abstract: according to an embodiment, an electronic device may include memory storing instructions, a plurality of antennas including a first antenna configured to transmit and receive radio frequency (rf) signals corresponding to a first radio access technology (rat) and a second rat, and a second antenna configured to receive rf signals corresponding to the first rat and the second rat, an rf circuit coupled to the plurality of antennas, and at least one communication processor, comprising processing circuitry, operatively coupled to the memory and the rf circuit. the instructions, when executed by at least one communication processor, individually and/or collectively, may cause the electronic device to: establish a first transmission channel connection based on the first rat and a second transmission channel connection based on the second rat using one of the plurality of antennas, identify whether a voice call based on the first rat is executed, and operate in a first antenna tuning mode, based on an electric field based on the first rat being equal to or greater than a first value, and operate in a second antenna tuning mode, based on the electric field based on the first rat being less than the first value, during execution of the voice call. based on the first antenna tuning mode being switched to the second antenna tuning mode according to a change in the electric field, a parameter associated with antenna sensitivity of the second transmission channel connection based on the second rat may decrease.
Inventor(s): Kyoungil Do of Suwon-si (KR) for samsung electronics co., ltd., Jinwoo Jung of Suwon-si (KR) for samsung electronics co., ltd., Jooyoung Song of Suwon-si (KR) for samsung electronics co., ltd., Mijin Lee of Suwon-si (KR) for samsung electronics co., ltd., Chanhee Jeon of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H02H9/04
CPC Code(s): H02H9/045
Abstract: a device including a first clamp circuit connected between a first node and a second node, wherein the first clamp circuit includes: a symmetric bipolar transistor comprising a control terminal, a first current terminal and a second current terminal, wherein the first current terminal and the second current terminal are symmetrical to each other with respect to the control terminal; a first bipolar transistor electrically connected to the symmetric bipolar transistor and to the first node; and a second bipolar transistor electrically connected to the symmetric bipolar transistor and to the second node.
Inventor(s): Sungyong KIM of Suwon-si (KR) for samsung electronics co., ltd., Kisun LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H02J7/00
CPC Code(s): H02J7/007182
Abstract: an electronic device according to various embodiments may comprise: a plurality of batteries; a charging circuit configured to charge the batteries; a first circuit configured to: the voltage of each battery so as to acquire voltage values of the respective batteries, and transmit one of the acquired voltage values to the charging circuit; and at least one processor, comprising processing circuitry, individually and/or collectively, configured to control the first circuit. at least one processor, individually and/or collectively may be configured to: control the first circuit so that the first circuit transmits, to the charging circuit, a maximum voltage value from among first voltage values of the respective batteries, based on the first voltage values of the respective batteries, acquired by the first circuit, exceeding a first threshold voltage value, determine whether the batteries have been fully charged, select one of the batteries that have not been fully charged based on some of the batteries not being fully charged, and control the first circuit to transmit, to the charging circuit, a second voltage value of the battery selected by the first circuit from among second voltage values of the respective batteries, acquired by the first circuit.
Inventor(s): Jaedeok CHA of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H02J7/06, G06F1/26, H02J7/00, H02M3/07
CPC Code(s): H02J7/06
Abstract: disclosed are a power transfer method and an electronic device for executing the power transfer method. the electronic device includes a battery and a charging circuit which, when external power is input, converts an input voltage of the external power into a charge voltage for charging the battery. the electronic device also includes a first conversion circuit which converts one of the charge voltage and a discharge voltage of the battery into a supply voltage according to a conversion ratio and a second conversion circuit which converts the supply voltage and supplies the same to a load. the electronic device also includes a processor which controls the charge circuit and the first conversion circuit, enables the charge voltage to be input to the first conversion circuit when external power is input, and enables the discharge voltage to be input to the first conversion circuit when external power is not input.
Inventor(s): Sangwook LEE of Suwon-si (KR) for samsung electronics co., ltd., Kyungmin LEE of Suwon-si (KR) for samsung electronics co., ltd., Bohwan CHOI of Suwon-si (KR) for samsung electronics co., ltd., Jinsoo CHOI of Suwon-si (KR) for samsung electronics co., ltd., Sungbum PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H02J50/60, H02J50/12, H02J50/80
CPC Code(s): H02J50/60
Abstract: the disclosure relates to an electronic device and a method for detecting a foreign body, wherein a control circuit of the electronic device may be configured to: supply transmission power to a power transmission circuit; identify, on the basis of a low power wireless communication signal, whether an external device is present in a partial area of the externally exposed surface of the electronic device, which corresponds to a resonant circuit; on the basis of the presence of the external device, apply a high frequency current to the resonant circuit and transmit transmission power generated in the resonant circuit to the external device; obtain analog digital converter samples in a half-wave rectified direct current interval of a direct current link voltage corresponding to a transmission current detected in the power transmission circuit; and detect a foreign body on the basis of the analog digital converter samples.
Inventor(s): Terrance Christopher HUANG of Suwon-si (KR) for samsung electronics co., ltd., Youngjae KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H02J50/80, H02J7/00, H02J50/10, H02J50/40
CPC Code(s): H02J50/80
Abstract: the battery system includes one or more respective battery packs each comprising at least one battery cell; monitoring circuitry; a slave controller; and a first circuit, wherein the first circuit comprises a first wpt system and a first converter circuit; a secondary circuit, wherein the secondary circuit comprises secondary wpt systems corresponding to each of the respective battery packs, with each secondary wpt system being configured to wirelessly transmit and receive power to and from the respective first wpt systems in the one or more respective battery packs and a second converter circuit; and a master controller.
Inventor(s): Jihoon HAN of Suwon-si (KR) for samsung electronics co., ltd., Dongsuk KO of Suwon-si (KR) for samsung electronics co., ltd., Taesang PARK of Suwon-si (KR) for samsung electronics co., ltd., Woong HWANG of Suwon-si (KR) for samsung electronics co., ltd., Younmo KANG of Suwon-si (KR) for samsung electronics co., ltd., Jimin KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H02K1/14, H02K7/14
CPC Code(s): H02K1/14
Abstract: according to an embodiment of the present disclosure, a stator is formable in a band shape or an annular shape, and includes plurality of element stators adjacently arranged, each element stator of the plurality of element stators including a teeth portion and a body portion disposed at one end of the teeth portion. the stator includes a plurality of connecting portions, wherein, for adjacent element stators of the plurality of element stators, a respective connecting portion of the plurality of connecting portions connects a first lateral side of a first body portion of a first element stator of the adjacent element stators and a second lateral side of a second body portion of a second element stator of the adjacent element stators, and a recess is formed at a front end of the first lateral side or a front end of the second lateral side.
Inventor(s): Younggyu Lee of Suwon-si (KR) for samsung electronics co., ltd., TONGSUNG KIM of Suwon-si (KR) for samsung electronics co., ltd., SEUNGJUN BAE of Suwon-si (KR) for samsung electronics co., ltd., SEONKYOO LEE of Suwon-si (KR) for samsung electronics co., ltd., TAESUNG LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H03K19/00, H03K19/017, H03K19/17784
CPC Code(s): H03K19/0005
Abstract: a semiconductor memory device may include an impedance adjustment pad, a dummy pull-down driver and an external resistor connected in parallel between the impedance adjustment pad and a ground, a recursive code generation circuit configured to recursively generate a pull-up code and a pull-down code corresponding to a target resistance by using the external resistor and the dummy pull-down driver as a reference resistance, in an impedance calibration operation of the semiconductor memory device, a code register configured to store the generated pull-up code and the pull-down code, and a calibration control logic circuit configured to control the recursive code generation circuit during a plurality of steps in the impedance calibration operation while adjusting a resistance value of the dummy pull-down driver.
Inventor(s): Hyosung LEE of Suwon-si (KR) for samsung electronics co., ltd., Hyoseok NA of Suwon-si (KR) for samsung electronics co., ltd., Namjun CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04B1/00, H04B1/40
CPC Code(s): H04B1/0064
Abstract: an example electronic device may include a first transmission mixer configured to up-convert transmission signals, a second transmission mixer configured to up-convert signals output by the first transmission mixer, a divider circuit configured to divide signals output by the second transmission mixer, first antenna ports associated with a first antenna structure for performing first frequency band communication based on signals output by the divider circuit, a third transmission mixer configured to up-convert output signals from the divider circuit, and second antenna ports associated with a second antenna structure for performing second frequency band communication based on signals output by the third transmission mixer.
Inventor(s): Peng LIN of Beijing (CN) for samsung electronics co., ltd., Di SU of Beijing (CN) for samsung electronics co., ltd., Chen QIAN of Beijing (CN) for samsung electronics co., ltd.
IPC Code(s): H04B1/10, H04B1/04
CPC Code(s): H04B1/1027
Abstract: the present disclosure provides a method and apparatus for receiving signals in a wireless communication network. the method includes performing a first self-interference cancellation on a time domain baseband signal; performing a sensing-related detection on the time domain baseband signal after the first self-interference cancellation; determining whether to perform a second self-interference cancellation based on a sensing-related detection result; if it is determined to perform the second self-interference cancellation based on the sensing-related detection result, performing at least one second self-interference cancellation on the time domain baseband signal.
Inventor(s): Dasom Park of Suwon-si (KR) for samsung electronics co., ltd., Donghyuk Lim of Suwon-si (KR) for samsung electronics co., ltd., Youngho Choi of Suwon-si (KR) for samsung electronics co., ltd., Kyeongjoon Ko of Suwon-si (KR) for samsung electronics co., ltd., Byoungjoo Yoo of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04B1/16, H03F3/19, H03K3/037, H03K5/24
CPC Code(s): H04B1/16
Abstract: a receiver is provided. the receives includes: a signal detection circuit configured to receive differential signals having a variable data rate, and provide a detection signal based on the differential signals corresponding to a first data pattern of a first frequency, wherein the first data pattern of the first frequency indicates an exit from an electrical idle state; an analog-digital converter circuit configured to generate sample data by sampling the differential signals at a second frequency, and identify whether the sample data corresponds to a second data pattern which indicates normal data; and a control circuit configured to enable the analog-digital converter circuit based on the detection signal, and store the sample data. the first frequency is lower than the second frequency.
Inventor(s): Gilwon Lee of McKinney TX (US) for samsung electronics co., ltd., Md. Saifur Rahman of Plano TX (US) for samsung electronics co., ltd., Eko Onggosanusi of Coppell TX (US) for samsung electronics co., ltd.
IPC Code(s): H04B7/024, H04B7/0456, H04B7/06
CPC Code(s): H04B7/024
Abstract: apparatuses and method for calibration for multiple transmission and reception point (multi-trp) coherent joint transmissions. a method performed by a user equipment (ue) includes receiving configuration information about n downlink (dl) antenna port groups, n uplink (ul) antenna port groups, wherein the n dl antenna port groups are associated with the n ul antenna port groups, respectively and receiving an indicator to trigger m dl antenna port groups, where m≤n. the method further includes measuring a dl reference signal (rs) for the triggered m dl antenna port groups; determining, based on the measured dl rs, an ul precoder for each of m ul antenna port groups respectively associated with the triggered m dl antenna port groups; and transmitting, based on the ul precoder, an ul rs for the m associated ul antenna port groups.
Inventor(s): Zhongfeng ZHANG of Beijing (CN) for samsung electronics co., ltd., Di SU of Beijing (CN) for samsung electronics co., ltd., Peng LIN of Beijing (CN) for samsung electronics co., ltd.
IPC Code(s): H04B17/10, H04B17/309
CPC Code(s): H04B17/102
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. disclosed is a method performed by a first node in a wireless communication system including performing channel estimation on an echo signal of a first signal transmitted by the first node, determining a first filter based on a result of the channel estimation and a distance between the first node and a target, and performing a first filtering process on the result of channel estimation based on the first filter.
Inventor(s): Di SU of Beijing (CN) for samsung electronics co., ltd., Chen QIAN of Beijing (CN) for samsung electronics co., ltd., Peng LIN of Beijing (CN) for samsung electronics co., ltd.
IPC Code(s): H04L5/00, H04B1/713, H04L1/00, H04W72/1273
CPC Code(s): H04L5/0048
Abstract: a method performed by a communication apparatus in a wireless communication system is provided. the method includes determining configuration information on at least one physical signal cluster, and transmitting the at least one physical signal cluster based on the configuration information on the at least one physical signal cluster, wherein the physical signal cluster includes at least one physical signal block, wherein the physical signal block includes n repetitions of a sequence, and wherein the n is an integer greater than or equal to 1.
Inventor(s): Dalin Zhu of Allen TX (US) for samsung electronics co., ltd., Md. Saifur Rahman of Plano TX (US) for samsung electronics co., ltd., Emad Nader Farag of Flanders NJ (US) for samsung electronics co., ltd., Gilwon Lee of McKinney TX (US) for samsung electronics co., ltd., Eko Onggosanusi of Coppell TX (US) for samsung electronics co., ltd.
IPC Code(s): H04L5/00
CPC Code(s): H04L5/0057
Abstract: methods and apparatuses for resource and reporting settings. a method performed by a user equipment (ue) includes receiving first information to enable transmission of an indicator indicating transmission of a beam report and transmitting, based on the first information, the indicator. the method further includes receiving second information related to one or more channel state information reference signal (csi-rs) resources for the beam report; measuring, based on the second information, the one or more csi-rs resources for the beam report; and transmitting the beam report.
Inventor(s): Hyoungjin LIM of Suwon-si (KR) for samsung electronics co., ltd., Seijoon SHIM of Suwon-si (KR) for samsung electronics co., ltd., Jongho OH of Suwon-si (KR) for samsung electronics co., ltd., Hyeri BANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L27/20
CPC Code(s): H04L27/20
Abstract: according to an embodiment, a method performed by a distributed unit (du) may comprise generating, based on a modulation compression scheme, a modulation value corresponding to information bits. the method may comprise generating, based on a shifting operation corresponding to the modulation compression scheme, user plane (u-plane) data corresponding to the modulation value. the method may comprise transmitting, to a radio unit (ru) through a fronthaul interface, a u-plane message comprising the generated u-plane data. in a case of binary phase shift keying (bpsk), the modulation compression scheme may be set to perform the shifting operation based on a designated first equation. in a case of non-bpsk, the modulation compression scheme may be set to perform the shifting operation based on a designated second equation.
Inventor(s): Sukhdeep SINGH of Bangalore (IN) for samsung electronics co., ltd., Joseph Thaliath of Bangalore (IN) for samsung electronics co., ltd., Sandeep Kumar Jaisawal of Bangalore (IN) for samsung electronics co., ltd., Seungil Yoon of Suwon-si (KR) for samsung electronics co., ltd., Ashish Jain of Bangalore (IN) for samsung electronics co., ltd., Avinash Bhat of Bangalore (IN) for samsung electronics co., ltd., Ganesh Kumar Thangavel of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04L41/12, H04L41/14, H04L41/16, H04L41/5009
CPC Code(s): H04L41/12
Abstract: embodiments herein disclose a method and network apparatus for network performance evaluation using ai-based network cloning. the method includes constructing one or more ai-based network clones of one or more network nodes. the one or more ai-based network clones mimics a data pattern and cell behavior of the one or more network nodes. further, the method includes receiving a solution predicted by an ai server to mitigate one or more problems associated with one or more services of the one or more network nodes. further, the method includes evaluating a performance of the one or more ai-based network clones by deploying the solution on the one or more ai-based network clones. further, the method includes sending the solution to the one or more network nodes for deployment or retraining based on the performance of the one or more ai-based network clones.
Inventor(s): Vishnu Vardhan Ratnam of Plano TX (US) for samsung electronics co., ltd., Bilal Sadiq of Plano TX (US) for samsung electronics co., ltd., Hao Chen of Allen TX (US) for samsung electronics co., ltd., Abhishek Sehgal of Frisco TX (US) for samsung electronics co., ltd., Boon Loong Ng of Plano TX (US) for samsung electronics co., ltd., Jianzhong Zhang of Dallas TX (US) for samsung electronics co., ltd.
IPC Code(s): H04L43/0864, H04L25/02, H04L27/26, H04L43/0829
CPC Code(s): H04L43/0864
Abstract: a method includes obtaining wi-fi channel state information (csi) parameters measured at an anchor and a target device from wi-fi frames transmitted between the anchor and the target device, the csi parameters comprising, for each of the anchor and the target device, frame transmission and reception times, a carrier phase of the csi, a crystal offset factor, and a packet detection time error. the method also includes determining a round trip time (rtt) estimate or a relative change in the rtt estimate as a function of the csi parameters. the method further includes estimating a range between the anchor and the target device as a function of the rtt estimate, or estimating a change in the range between the anchor and the target device as a function of the relative change in the rtt estimate.
Inventor(s): Yoonseon HAN of Suwon-si (KR) for samsung electronics co., ltd., Dongmyung KIM of Suwon-si (KR) for samsung electronics co., ltd., Sunghwan KIM of Suwon-si (KR) for samsung electronics co., ltd., Younggyoun MOON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L47/62, H04L47/32
CPC Code(s): H04L47/6205
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. a method performed by a first network entity in a wireless communication system is provided. the method includes receiving, from a second network entity, a first message including information on at least one of a type, a size, or an identifier of an action buffer, which is for creating of the action buffer, receiving, from the second network entity, a second message including the identifier for adding of at least one action to multiple memories assigned to the action buffer created based on the first message, and performing an arbitrary action for an input packet based on an address of memory in which the arbitrary action among the at least one action is stored.
Inventor(s): Raetae KIM of Suwon-si (KR) for samsung electronics co., ltd., Moonjeong KIM of Suwon-si (KR) for samsung electronics co., ltd., Myunghoon KWAK of Suwon-si (KR) for samsung electronics co., ltd., Jookwan LEE of Suwon-si (KR) for samsung electronics co., ltd., Duyeong CHOI of Suwon-si (KR) for samsung electronics co., ltd., Yangwook KIM of Suwon-si (KR) for samsung electronics co., ltd., Junghyeob LEE of Suwon-si (KR) for samsung electronics co., ltd., Changryong HEO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04M1/02
CPC Code(s): H04M1/0235
Abstract: according to various embodiments, an electronic device may comprise: a motor; a flexible display having an externally visible screen area configured to be extended or shrunk by driving the motor; a driving level determination unit comprising circuitry configured to determine a driving level for the motor based on one or more pieces of context information related to the electronic device based on the screen area being requested to be extended or shrunk; and a driving control unit comprising circuitry configured to drive the motor according to the determined driving level.
Inventor(s): Dan P. Gavie of Brooklyn NY (US) for samsung electronics co., ltd., Jamar A. Bromley of Brooklyn NY (US) for samsung electronics co., ltd., Woo Ram Jeon of Allen TX (US) for samsung electronics co., ltd.
IPC Code(s): H04M1/72484, H04M1/72454, H04M1/72469
CPC Code(s): H04M1/72484
Abstract: a method includes detecting a closure of an electronic device that ends a communication session involving a user of the electronic device. the method also includes displaying, on an external display of the electronic device viewable when the electronic device is closed and based on a context associated with at least one of the electronic device or the user, multiple images for selection by the user. in addition, the method includes receiving a selection by the user of at least one of the displayed images and initiating transmission of the at least one selected image to another electronic device associated with another party involved with the communication session.
Inventor(s): Naveen KOLATI of Bangalore (IN) for samsung electronics co., ltd., Kiran Gurudev KAPALE of Bangalore (IN) for samsung electronics co., ltd., Siva Prasad GUNDUR of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04N7/14, H04L51/224, H04L65/65
CPC Code(s): H04N7/147
Abstract: a method, a mission critical (mc) server, and a receiver for managing media communication in an mc system are provided. the method comprises receiving, from a sender, a request and a media stream for transmitting the media stream to one or more receivers. the request indicates a mode of transmission of the media stream. further, the method comprises transmitting a notification message indicating a mode of reception identified based on the mode of transmission, to the one or more receivers for receiving the media stream from the sender. the mode of reception is one from among an emergency mode and a normal mode. thereafter, the method comprises transmitting the media stream to the one or more receivers subsequent to transmission of the notification message, when the mode of reception is the emergency mode.
Inventor(s): Yingen Xiong of Mountain View CA (US) for samsung electronics co., ltd., Christopher A. Peri of Mountain View CA (US) for samsung electronics co., ltd.
IPC Code(s): H04N13/128, G06T19/00
CPC Code(s): H04N13/128
Abstract: a method includes obtaining first and second image frames of a scene. the method also includes providing the first image frame as input to an object segmentation model, where the object segmentation model is trained to generate first object segmentation predictions for objects in the scene and a depth or disparity map based on the first image frame. the method further includes generating second object segmentation predictions for the objects in the scene based on the second image frame. the method also includes determining boundaries of the objects in the scene based on the first and second object segmentation predictions. in addition, the method includes generating a virtual view for presentation on a display of an extended reality (xr) device based on the boundaries of the objects in the scene.
Inventor(s): Yingen Xiong of Mountain View CA (US) for samsung electronics co., ltd., Christopher A. Peri of Mountain View CA (US) for samsung electronics co., ltd.
IPC Code(s): H04N13/344, G06T19/00, H04N13/128, H04N13/239
CPC Code(s): H04N13/344
Abstract: a method includes obtaining images of a scene captured using a stereo pair of imaging sensors of an xr device and depth data associated with the images, where the scene includes multiple objects. the method also includes obtaining volume-based 3d models of the objects. the method further includes, for one or more first objects, performing depth-based reprojection of the one or more 3d models of the one or more first objects to left and right virtual views based on one or more depths of the one or more first objects. the method also includes, for one or more second objects, performing constant-depth reprojection of the one or more 3d models of the one or more second objects to the left and right virtual views based on a specified depth. in addition, the method includes rendering the left and right virtual views for presentation by the xr device.
Inventor(s): Woongil Choi of Suwon-si (KR) for samsung electronics co., ltd., Gahyun Ryu of Suwon-si (KR) for samsung electronics co., ltd., Minsoo Park of Suwon-si (KR) for samsung electronics co., ltd., Minwoo Park of Suwon-si (KR) for samsung electronics co., ltd., Seungsoo Jeong of Suwon-si (KR) for samsung electronics co., ltd., Kwangpyo Choi of Suwon-si (KR) for samsung electronics co., ltd., Kiho Choi of Suwon-si (KR) for samsung electronics co., ltd., Narae Choi of Suwon-si (KR) for samsung electronics co., ltd., Anish Tamse of Suwon-si (KR) for samsung electronics co., ltd., Yinji Piao of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N19/174, H04N19/105, H04N19/119, H04N19/172, H04N19/70
CPC Code(s): H04N19/174
Abstract: provided is a video decoding method including obtaining identification information of a first tile and identification information of a last tile from a bitstream, wherein the first and last tiles are included in a first slice, determining an index difference between the first tile and the last tile, based on a result of comparing the identification information of the first tile with the identification information of the last tile, determining the number of tiles included in the first slice, by using the index difference between the first tile and the last tile, and decoding a plurality of tiles included in the first slice according to an encoding order by using the number of tiles included in the first slice, the identification information of the first tile, and the identification information of the last tile.
Inventor(s): Rong PAN of Xi’an (CN) for samsung electronics co., ltd., Pei YOU of Xi’an (CN) for samsung electronics co., ltd., Ge GAO of Xi’an (CN) for samsung electronics co., ltd.
IPC Code(s): H04N19/176, H04N19/50
CPC Code(s): H04N19/176
Abstract: a processor-implemented method includes determining weights of a plurality of channel blocks comprised in a neural network to encode an image, selecting one or more channel blocks from the plurality of channel blocks to encode the image based on the weights and a compression rate of the image, and generating an encoded image by encoding the image using a sub-neural network comprising channels comprised in the one or more channel blocks.
Inventor(s): Sungho MOON of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): H04N19/59, G06T3/40
CPC Code(s): H04N19/59
Abstract: a video diversification device includes a capture unit configured to capture each image of a video being played; a scaler configured to scale each captured image into an image with a first resolution; and an encoder configured to convert the scaled image into a plurality of encoding sources with different resolutions in a time-sharing manner.
Inventor(s): Narae CHOI of Suwon-si (KR) for samsung electronics co., ltd., Minsoo PARK of Suwon-si (KR) for samsung electronics co., ltd., Minwoo PARK of Suwon-si (KR) for samsung electronics co., ltd., Anish TAMSE of Suwon-si (KR) for samsung electronics co., ltd., Seungsoo JEONG of Suwon-si (KR) for samsung electronics co., ltd., Kiho CHOI of Suwon-si (KR) for samsung electronics co., ltd., Woongil CHOI of Suwon-si (KR) for samsung electronics co., ltd., Yinji PIAO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N19/593, H04N19/11, H04N19/132, H04N19/136, H04N19/176, H04N19/82
CPC Code(s): H04N19/593
Abstract: a video decoding method includes predicting a current block according to an intra prediction mode of the current block, determining whether to apply position dependent intra prediction filtering to the current block according to the intra prediction mode of the current block, when the position dependent intra prediction filtering is applied to the current block, determining at least one of an upper reference sample, a left reference sample, an upper weight, and a left weight for the position dependent intra prediction filtering of a current sample of the current block according to the intra prediction mode of the current block, and applying the position dependent intra prediction filtering to the current sample of the current block according to at least one of the upper reference sample, the left reference sample, the upper weight, and the left weight.
Inventor(s): Narae CHOI of Suwon-si (KR) for samsung electronics co., ltd., Minsoo Park of Suwon-si (KR) for samsung electronics co., ltd., Minwoo Park of Suwon-si (KR) for samsung electronics co., ltd., Anish Tamse of Suwon-si (KR) for samsung electronics co., ltd., Seungsoo Jeong of Suwon-si (KR) for samsung electronics co., ltd., Kiho Choi of Suwon-si (KR) for samsung electronics co., ltd., Woongil Choi of Suwon-si (KR) for samsung electronics co., ltd., Yinji Piao of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N19/593, H04N19/11, H04N19/132, H04N19/136, H04N19/176, H04N19/82
CPC Code(s): H04N19/593
Abstract: a video decoding method includes predicting a current block according to an intra prediction mode of the current block, determining whether to apply position dependent intra prediction filtering to the current block according to the intra prediction mode of the current block, when the position dependent intra prediction filtering is applied to the current block, determining at least one of an upper reference sample, a left reference sample, an upper weight, and a left weight for the position dependent intra prediction filtering of a current sample of the current block according to the intra prediction mode of the current block, and applying the position dependent intra prediction filtering to the current sample of the current block according to at least one of the upper reference sample, the left reference sample, the upper weight, and the left weight.
Inventor(s): Narae CHOI of Suwon-si (KR) for samsung electronics co., ltd., Minsoo PARK of Suwon-si (KR) for samsung electronics co., ltd., Minwoo PARK of Suwon-si (KR) for samsung electronics co., ltd., Anish TAMSE of Suwon-si (KR) for samsung electronics co., ltd., Seungsoo JEONG of Suwon-si (KR) for samsung electronics co., ltd., Kiho CHOI of Suwon-si (KR) for samsung electronics co., ltd., Woongil CHOI of Suwon-si (KR) for samsung electronics co., ltd., Yinji PIAO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N19/593, H04N19/11, H04N19/132, H04N19/136, H04N19/176, H04N19/82
CPC Code(s): H04N19/593
Abstract: a video decoding method includes predicting a current block according to an intra prediction mode of the current block, determining whether to apply position dependent intra prediction filtering to the current block according to the intra prediction mode of the current block, when the position dependent intra prediction filtering is applied to the current block, determining at least one of an upper reference sample, a left reference sample, an upper weight, and a left weight for the position dependent intra prediction filtering of a current sample of the current block according to the intra prediction mode of the current block, and applying the position dependent intra prediction filtering to the current sample of the current block according to at least one of the upper reference sample, the left reference sample, the upper weight, and the left weight.
Inventor(s): Narae CHOI of Suwon-si (KR) for samsung electronics co., ltd., Minsoo Park of Suwon-si (KR) for samsung electronics co., ltd., Minwoo Park of Suwon-si (KR) for samsung electronics co., ltd., Anish Tamse of Suwon-si (KR) for samsung electronics co., ltd., Seungsoo Jeong of Suwon-si (KR) for samsung electronics co., ltd., Kiho Choi of Suwon-si (KR) for samsung electronics co., ltd., Woongil Choi of Suwon-si (KR) for samsung electronics co., ltd., Yinji Piao of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N19/593, H04N19/11, H04N19/132, H04N19/136, H04N19/176, H04N19/82
CPC Code(s): H04N19/593
Abstract: a video decoding method includes predicting a current block according to an intra prediction mode of the current block, determining whether to apply position dependent intra prediction filtering to the current block according to the intra prediction mode of the current block, when the position dependent intra prediction filtering is applied to the current block, determining at least one of an upper reference sample, a left reference sample, an upper weight, and a left weight for the position dependent intra prediction filtering of a current sample of the current block according to the intra prediction mode of the current block, and applying the position dependent intra prediction filtering to the current sample of the current block according to at least one of the upper reference sample, the left reference sample, the upper weight, and the left weight.
Inventor(s): Hyungjin RHO of Suwon-si (KR) for samsung electronics co., ltd., Bongchan Kim of Suwon-si (KR) for samsung electronics co., ltd., Kangseok Byon of Suwon-si (KR) for samsung electronics co., ltd., Hyosang An of Suwon-si (KR) for samsung electronics co., ltd., Jonghun Won of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N23/68, H01F7/08, H01F7/121, H04N23/51, H04N23/54
CPC Code(s): H04N23/687
Abstract: a camera module includes: a camera housing; at least one lens aligned along an optical axis; a first printed circuit board (pcb) including an image sensor disposed on a surface of the first pcb; a carrier member configured to guide the first pcb in a first direction parallel to the optical axis and a second direction crossing the optical axis; and a driving member including: at least one coil; at least one magnet at least partially facing the at least one coil; and a plurality of guide balls, wherein the driving member is configured to move the carrier member in the first direction and the second direction based on rotations of the plurality of guide balls.
Inventor(s): Sehwan KI of Suwon-si (KR) for samsung electronics co., ltd., Younghyun JO of Suwon-si (KR) for samsung electronics co., ltd., Eunhee KANG of Suwon-si (KR) for samsung electronics co., ltd., Hyong Euk LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/46, G06T3/40, H04N9/78, H04N23/69, H04N23/85, H04N25/10
CPC Code(s): H04N25/46
Abstract: a method and apparatus for generating a high-resolution digital zoom image may obtain a raw image captured by an image sensor from the image sensor, obtain an rgb image corresponding to the raw image, separate a luminance component and a chrominance component from the rgb image, extract a first feature of the rgb image, of which color information is enhanced, by applying the chrominance component to a first neural network, extract a second feature of the rgb image, of which texture information is enhanced, by applying the raw image and the luminance component to a second neural network, and generate the high-resolution digital zoom image, which corresponds to the rgb image, by upscaling the color information and the texture information based on the first feature or the second feature.
Inventor(s): Sunghyuk Yim of Suwon-si (KR) for samsung electronics co., ltd., Seongwook Song of Suwon-si (KR) for samsung electronics co., ltd., Jeehong Lee of Suwon-si (KR) for samsung electronics co., ltd., Dongjin Park of Suwon-si (KR) for samsung electronics co., ltd., Wooseok Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/46, H04N25/11, H04N25/704, H04N25/78
CPC Code(s): H04N25/46
Abstract: an image sensor, including a pixel array; a readout circuit configured to generate image data including first image data including phase information regarding a first phase, second image data including phase information regarding a second phase, and full image data including color information; and a signal processing unit including: a front end processing module configured to generate third image data including additional phase information regarding the first phase using the second image data and the full image data, and to generate fourth image data including additional phase information regarding the second phase using the first image data and the full image data and an auto-focusing processing module configured to calculate a phase difference between the first phase and the second phase using the first image data, the second image data, the third image data, and the fourth image data.
Inventor(s): Hyesung KIM of Suwon-si (KR) for samsung electronics co., ltd., Jicheol LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W4/24, H04W8/20, H04W48/18
CPC Code(s): H04W4/24
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. specifically, disclosed is a method and apparatus for efficiently configuring and applying a policy associated with a roaming user equipment (ue) when an edge computing service is provided via a hr session or an lbo session.
Inventor(s): Hongjin CHOI of Suwon-si (KR) for samsung electronics co., ltd., Duckey LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W12/069, H04W12/0431, H04W12/082
CPC Code(s): H04W12/069
Abstract: the disclosure relates to 5g or 6g communication systems to support higher data rates and provide a method and apparatus for an authorization operation. the method comprises: receiving an authentication key and indicator; receiving the authentication key indicator, a first random value, or an indicator; generating a first authentication material based on the first random value and the authentication key; transmitting the generated first authentication material and a second random value; receiving a second authentication material, the second authentication material being generated by the authentication key based on the authentication key indicator and the second authentication material after verifying the first authentication material using the first random value and the authentication key; verifying the second authentication material using the authentication key; authenticating a user after verifying the second authentication material; and transmitting an authorization code, the ue redirected to the authorization function being authenticated by the api invoker.
Inventor(s): Yan Xin of Princeton NJ (US) for samsung electronics co., ltd., Mehmet N. Kurt of New York NY (US) for samsung electronics co., ltd., Samuel Albert of Robbinsville NJ (US) for samsung electronics co., ltd., Russell Ford of San Jose CA (US) for samsung electronics co., ltd., Semih Yagli of Jersey City NJ (US) for samsung electronics co., ltd., Jianzhong Zhang of Dallas TX (US) for samsung electronics co., ltd.
IPC Code(s): H04W16/22, H04W24/02
CPC Code(s): H04W16/22
Abstract: methods and apparatuses for automating configuration management in cellular networks. a method of a ue comprises: training, based on historical samples, a regression model y using samples obtained from a set of parameters, wherein the regression model y comprises a function of a first term x and a second term h; and predicting, based on the regression model y, a target kpi to capture parameter impacts corresponding to the second term h.
Inventor(s): Sangyeob JUNG of Suwon-si (KR) for samsung electronics co., ltd., Seungbeom JEONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W24/10
CPC Code(s): H04W24/10
Abstract: this disclosure relates to 5th generation (5g) or 6th generation (6g) communication systems to support higher data rates. a method performed by a secondary node (sn) in a wireless communication system is provided. the method includes transmitting, to a user equipment (ue), first configuration information associated with a quality of experience (qoe) measurement, wherein the first configuration information includes an indicator indicating whether a segmentation of a report of the qoe measurement on a signaling radio bearer (srb) associated with the report of the qoe measurement to the sn is allowed, and receiving, from the ue, the report of the qoe measurement based on the indicator.
20240224101. USER EQUIPMENT INITIATED REPORTING_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Emad Nader Farag of Flanders NJ (US) for samsung electronics co., ltd., Md. Saifur Rahman of Plano TX (US) for samsung electronics co., ltd., Eko Onggosanusi of Coppell TX (US) for samsung electronics co., ltd., Dalin Zhu of Allen TX (US) for samsung electronics co., ltd., Gilwon Lee of McKinney TX (US) for samsung electronics co., ltd.
IPC Code(s): H04W24/10
CPC Code(s): H04W24/10
Abstract: methods and apparatuses for user equipment (ue) initiated reporting in a wireless communication system. a method of operating a ue includes receiving first information related to resources for a physical uplink shared channel (pusch); receiving second information related to (i) beam measurement resources and (ii) a beam report configuration; and receiving third information related to a condition to transmit a beam report; measuring the beam measurement resources. the method further comprises determining, based on the measurement and the condition, whether to transmit the beam report; in response to determining to transmit the beam report, determining the beam report based on the measurement; and transmitting, via a resource from the resources for the pusch, the beam report. the resource for the pusch is a type 1 configured grant pusch resource.
Inventor(s): Hyunjeong KANG of Suwon-si (KR) for samsung electronics co., ltd., Anil AGIWAL of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W28/02, H04L5/00, H04W4/40, H04W72/23, H04W72/56, H04W76/27, H04W88/06
CPC Code(s): H04W28/0252
Abstract: a communication method of a first sidelink terminal in a wireless communication system is provided. the communication method includes obtaining sidelink radio bearer configuration information, identifying default sidelink radio bearer information in the sidelink radio bearer configuration information, and transmitting data to a base station or a second sidelink terminal based on the default sidelink radio bearer information.
Inventor(s): Weiwei WANG of Beijing (CN) for samsung electronics co., ltd., Hong WANG of Beijing (CN) for samsung electronics co., ltd., Lixiang XU of Beijing (CN) for samsung electronics co., ltd.
IPC Code(s): H04W36/00, H04W36/30
CPC Code(s): H04W36/0061
Abstract: the present disclosure provides a connection reestablishment method, including: receiving a reestablishment message from a second node, the reestablishment message including information related to a configuration of the second node; performing a configuration based on the received reestablishment message; and transmitting a reestablishment complete message to the second node. the present disclosure also provides a context acquisition method, an interface management method, a ue context management method, a ue context acquisition method, a method for triggering ue to reestablish a connection, and various nodes and computer-readable medium that perform the above methods.
Inventor(s): Satya Prakash of Bangalore (IN) for samsung electronics co., ltd., Anoop P V of Bangalore (IN) for samsung electronics co., ltd., Nishant of Bangalore (IN) for samsung electronics co., ltd., Kailash Kumar Jha of Bangalore (IN) for samsung electronics co., ltd., Mohit Kumar of Bangalore (IN) for samsung electronics co., ltd., Abhishek Kaswan of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04W36/00, H04W8/22, H04W36/32
CPC Code(s): H04W36/0069
Abstract: a method for handling network functionalities of a wireless network by a base station. the method may include receiving parameters from a plurality of user equipments (ues) in the wireless network. the method may include identifying a plurality of ue clusters within the cell of the base station based on the parameters. the method may include detecting a network service requirement of a ue cluster in the plurality of ue clusters. the method may include determining whether the ue cluster in the plurality of ue clusters meets a threshold condition based on the parameters. the method may include activating a network functionality for the ue cluster based on the network service requirement of the ue cluster upon determining that the ue cluster in the plurality of ue clusters meets the threshold condition.
Inventor(s): Jicheol LEE of Gyeonggi-do (KR) for samsung electronics co., ltd., Hyesung KIM of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04W36/14, H04W36/00
CPC Code(s): H04W36/142
Abstract: the disclosure relates to a fifth generation (5g) or sixth generation (6g) communication system for supporting a higher data transmission rate. a method performed by a visited-session management function (v-smf) in a visited public land mobile network (vplmn) includes receiving, from an access and mobility management function (amf) in the vplmn, a protocol data unit (pdu) session create request message including an indicator for allowing home-routed session breakout (hr-sbo) and an identifier (id) of the vplmn after an inter-public land mobile network (plmn) handover is performed, transmitting, to a home-smf (h-smf) in a home plmn (hplmn), a pdu session update request message including the id of the vplmn and an hr-sbo request message, and receiving, from the h-smf, a pdu session update response message including an authorization result for the hr-sbo.
Inventor(s): June HWANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W40/22, H04W40/12, H04W76/19, H04W88/08
CPC Code(s): H04W40/22
Abstract: the present disclosure relates to a 5th generation (5g) or pre-5g communication system for supporting a higher data transmission rate than a 4th generation (4g) communication system such as long-term evolution (lte). according to various embodiments of the present disclosure, provided is an operation method of an integrated access and backhaul (iab) node in a wireless communication system, the method comprising the steps of: receiving flow control feedback; determining whether a first link corresponding to a specific routing identifier (id) is unavailable, on the basis of the flow control feedback; if the first link is unavailable, then selecting one entry among at least one entry in a backhaul (bh) routing configuration; selecting an available second link corresponding to the selected entry; and performing routing on the basis of the available second link.
Inventor(s): Varini GUPTA of Bangalore (IN) for samsung electronics co., ltd., Ashok Kumar NAYAK of Bangalore (IN) for samsung electronics co., ltd., Danish Ehsan HASHMI of Bangalore (IN) for samsung electronics co., ltd., Hoyeon LEE of Suwon-si (KR) for samsung electronics co., ltd., Lalith KUMAR of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04W48/18, H04W60/04, H04W60/06
CPC Code(s): H04W48/18
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. methods and systems for handling network slice admission control for user equipment (ue) are provided. the disclosure relates to network slicing and more particularly, to a system and method of ensuring that a communication system is able to accurately enforce quota on the maximum number of ues concurrently registering for a network slice defined by a single network slice selection assistance information (s-nssai). the disclosure describes how the limits of “number of terminals” configured for an s-nssai may be accurately maintained in a network slice admission control function (nsacf), and thus the enforcement may be performed when the limit is really exhausted. the disclosure also describes that a deregistration notification from a unified data management (udm) may act as a trigger for an old mobility management function (amf) to decrement counts in the nsacf as the old amf is no longer serving the ue.
Inventor(s): Lalith KUMAR of Bangalore (IN) for samsung electronics co., ltd., Kailash Kumar JHA of Bangalore (IN) for samsung electronics co., ltd., Samiran BHOWMIK of Bangalore (IN) for samsung electronics co., ltd., Aman AGARWAL of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04W60/04, H04W48/20, H04W60/06, H04W84/04, H04W84/06
CPC Code(s): H04W60/04
Abstract: the present disclosure relates to a pre-5-generation (5g) or 5g communication system to be provided for supporting higher data rates beyond 4-generation (4g) communication system such as long term evolution (lte). a method for handling communication in a wireless network by a user equipment (ue) is provided. the method includes receiving a non-access stratum (nas) message indicating that the ue is not permitted to access a first public land mobile network (plmn) over a satellite communication along with geographical indication or a timer indication from the first plmn. further, the method includes determining a geographical area based on the received geographical indication or a timer value based on the timer indication. further, the method includes starting a timer with the timer value. further, the method includes determining that the ue is not allowed to access the first plmn in the determined geographical area or the expiry of the timer. further, the method includes performing a plmn selection and registration procedure on a second plmn based on the determination.
Inventor(s): Kyungmin PARK of Herndon VA (US) for samsung electronics co., ltd., Esmael Hejazi DINAN of McLean VA (US) for samsung electronics co., ltd.
IPC Code(s): H04W68/02, H04W8/24, H04W68/04, H04W76/11, H04W76/27
CPC Code(s): H04W68/025
Abstract: a first base station receives from a second base station: a cell identifier of a cell of the second base station; and a second radio access network (ran) area identifier of the cell. a packet for a wireless device in a radio resource control (rrc) inactive state is received. a ran paging message is sent to the second base station in response to receiving the packet. the ran paging message is based on a first ran area identifier of the first base station being identical to the second ran area identifier.
Inventor(s): Zhe CHEN of Beijing (CN) for samsung electronics co., ltd., Jingxing FU of Beijing (CN) for samsung electronics co., ltd., Feifei SUN of Beijing (CN) for samsung electronics co., ltd., Bin YU of Beijing (CN) for samsung electronics co., ltd.
IPC Code(s): H04W72/0446, H04W72/232
CPC Code(s): H04W72/0446
Abstract: disclosed is a method performed by a network-controlled repeater (ncr) in a wireless communication system, including obtaining ncr configuration information from a network node, and monitoring or detecting a first downlink control information format according to the ncr configuration information, wherein the first downlink control information format is used to inform a beam indication of an access link for the ncr.
Inventor(s): Jingxing FU of Beijing (CN) for samsung electronics co., ltd., Feifei SUN of Beijing (CN) for samsung electronics co., ltd., Zhe CHEN of Beijing (CN) for samsung electronics co., ltd.
IPC Code(s): H04W72/0453, H04W52/14, H04W72/12, H04W72/232
CPC Code(s): H04W72/0453
Abstract: a method and a device for reception and transmission are provided, wherein a method performed by a user equipment (ue) in a wireless communication network is provided. the method includes determining a frequency domain resource related to a physical uplink shared channel (pusch) transmission based on indication information, and determining a power of the pusch transmission for transmitting pusch based on the frequency domain resource related to the pusch transmission, wherein the frequency domain resource related to the pusch transmission includes a frequency domain resource allocated to the pusch or a frequency domain resource available for the pusch transmission among the frequency domain resource allocated to the pusch.
Inventor(s): Dongyeon KIM of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04W72/12, H04W48/18
CPC Code(s): H04W72/12
Abstract: according to an embodiment of the disclosure, an operating method of an access and management function (amf) device in a wireless communication system may include determining a backhaul network to be used for control plane connection from among available backhaul networks, when receiving a registration request message of a user terminal, transmitting a control signal to a radio access network (ran) device through the determined backhaul network, and selecting a session management function (smf) device based on the determined backhaul network.
Inventor(s): Dalin Zhu of Allen TX (US) for samsung electronics co., ltd., Md. Saifur Rahman of Plano TX (US) for samsung electronics co., ltd., Emad Nader Farag of Flanders NJ (US) for samsung electronics co., ltd., Gilwon Lee of McKinney TX (US) for samsung electronics co., ltd., Eko Onggosanusi of Coppell TX (US) for samsung electronics co., ltd.
IPC Code(s): H04W72/232, H04B7/06, H04L5/00, H04W16/28
CPC Code(s): H04W72/232
Abstract: methods and apparatus for user equipment (ue)-initiated channel state information (csi) measurement and reporting. a method performed by a ue includes transmitting an indicator to request transmission of one or more csi reference signals (rss), receiving a downlink control information (dci) format indicating a value of a csi request field, and identifying a first time window. the method further includes identifying a reception time of the dci format relative to a last symbol for transmission of the indicator, determining, based on the value, a csi resource setting and a csi reporting setting, and measuring, based on the csi resource setting, the one or more csi-rss.
Inventor(s): Cheolkyu SHIN of Gyeonggi-do (KR) for samsung electronics co., ltd., Hyunseok RYU of Gyeonggi-do (KR) for samsung electronics co., ltd., Youngbum KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Jeongho YEO of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04W72/25, H04W72/40
CPC Code(s): H04W72/25
Abstract: the present invention relates to communication technology combining iot technology with a 5g communication system for supporting higher data rates than 4g systems, and a system therefor. the present invention can be applied to intelligent services (for example, smart homes, smart buildings, smart cities, smart cars or connected cars, healthcare, digital education, retail businesses, security and safety-related services, and the like) on the basis of 5g communication technology and iot-related technology. further, the present invention provides a method and device for resource allocation in a wireless communication system through sidelink inter-ue coordination.
Inventor(s): Seungwon KANG of Suwon-si (KR) for samsung electronics co., ltd., Hyoungrok KIM of Suwon-si (KR) for samsung electronics co., ltd., Minyoung LEE of Suwon-si (KR) for samsung electronics co., ltd., Chungkeun LEE of Suwon-si (KR) for samsung electronics co., ltd., Hakyung JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W72/50, H04W72/232, H04W72/30
CPC Code(s): H04W72/50
Abstract: a method performed by a near-real time (rt) radio access network intelligent controller (ric), may comprise: receiving, from an e2 node, an indication message including information on a slice associated with a cell; identifying a size of a resource allocated for the slice based on the information on the slice; and transmitting, to the e2 node, a control message including information on the size of the resource, wherein the information on the slice may comprise collection duration, a sum of data volume during the collection duration, and information on a terminal associated with the slice.
Inventor(s): Dooyoung KIM of Suwon-si (KR) for samsung electronics co., ltd., Keonyoung LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W72/51, H04W60/04, H04W72/21, H04W76/30
CPC Code(s): H04W72/51
Abstract: an electronic device includes a communication circuit, a processor, and memory storing instructions. the instructions, when executed by the processor, cause the electronic device to receive, a user equipment (ue) capability enquiry (uce) message requesting to transfer capability information of the electronic device from a network, transmit a ue capability information (uci) message including the capability information of the electronic device to the network, in response to the uci message, identify whether a message is received from the network within a set time, identify whether the message is a radio resource control (rrc) connection release message indicating to release an rrc connection, and based on identifying that the message is the rrc connection release message, identify that a version number of a technical specification (ts) release operated in the electronic device is different from a version number of a ts release operated in the network.
Inventor(s): Jinsung KIM of Suwon-si (KR) for samsung electronics co., ltd., Sungnam HONG of Suwon-si (KR) for samsung electronics co., ltd., Kiseob HONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W72/541, H04L1/00, H04L5/00, H04W72/232
CPC Code(s): H04W72/541
Abstract: a device of a base station may comprise memory storing instructions; a transceiver; and a processor. the instructions, when executed by the processor, may cause the device to: receive, uplink signals within symbols of a first slot; obtain an interference strength of a symbol that has an index usable for transmission of a sounding reference signal (srs) on a neighbor cell from among the symbols of the first slot; determine, as time resources for uplink data to be transmitted from a user equipment (ue) within a second slot, at least one symbol respectively having at least another index distinct from the index from among symbols of the second slot; and transmit, to the ue, downlink control information indicating the at least one symbol from among the symbols of the second slot as the time resources for the uplink data to be transmitted within the second slot.
Inventor(s): Di SU of Beijing (CN) for samsung electronics co., ltd., Chen QIAN of Beijing (CN) for samsung electronics co., ltd., Peng LIN of Beijing (CN) for samsung electronics co., ltd.
IPC Code(s): H04W74/08
CPC Code(s): H04W74/0808
Abstract: the present disclosure relates to a 5g communication system or a 6g communication system for supporting higher data rates beyond a 4g communication system such as long term evolution (lte). an apparatus and a method in a wireless communication system are provided. the method includes transmitting a physical signal, and determining resources associated with sensing detection based on the physical signal, where on the determined resources, one or more downlink signals are not received, and/or one or more uplink signals are not transmitted. this disclosure can improve communication efficiency.
Inventor(s): Michal WÓDCZAK of Warszawa (PL) for samsung electronics co., ltd.
IPC Code(s): H04W76/10, H04B7/15, H04L1/06, H04W72/044, H04W72/20
CPC Code(s): H04W76/10
Abstract: an example method performed by a first access and mobility management function (amf) of a wireless communication system may include establishing a control channel connection with at least two enhanced relays (ers) through a first base station managed by the first amf; controlling the at least two ers to establish a communication channel with a second base station distinct from the first base station through the control channel; and controlling the at least two ers to transmit data received through the communication channel to a first user equipment (ue).
Inventor(s): Yue WANG of Staines (GB) for samsung electronics co., ltd., Junhyuk SONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W76/10, H04W76/20, H04W88/12, H04W92/12
CPC Code(s): H04W76/10
Abstract: according to various embodiments, an e2 node comprises at least one transceiver and at least one processor operably coupled to the at least one transceiver. the at least one processor is configured to control the at least one transceiver to transmit, to a near-real time (near-rt) radio access network (ran) intelligent controller (ric) via an e2 interface, a e2 setup request message including e2 retention information. the at least one processor is configured to control the at least one transceiver to receive, from the near-rt ric via the e2 interface, a e2 setup response message in response to the e2 setup request message including e2 retention indication.
Inventor(s): Hyunjeong KANG of Gyeonggi-do (KR) for samsung electronics co., ltd., Anil AGIWAL of Gyeonggi-do (KR) for samsung electronics co., ltd., Sangkyu BAEK of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04W76/14, H04W24/10, H04W72/23, H04W92/18
CPC Code(s): H04W76/14
Abstract: the present disclosure relates to a communication method and system for converging a 5-generation (5g) communication system for supporting higher data rates beyond a 4-generation (4g) system with a technology for internet of things (iot). the present disclosure may be applied to intelligent services based on the 5g communication technology and the iot-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. disclosed is a method performed by a ue in a wireless communication system including receiving, from a base station associated with a first radio access technology (rat), a radio resource control (rrc) message including information related to a channel busy ratio (cbr) for a sidelink associated with a second rat, which is different from the first rat, measuring the cbr for the sidelink based on the information, and transmitting, to the base station, a measurement report message including the cbr for the sidelink associated with the second rat.
Inventor(s): Sangkyu BAEK of Gyeonggi-do (KR) for samsung electronics co., ltd., Beomsik BAE of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04W76/20, H04W72/1268, H04W72/21, H04W72/566
CPC Code(s): H04W76/20
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. a method for user equipment according to an embodiment of the present disclosure comprises the steps of: receiving, from a base station, first information indicating activation or deactivation of at least one uplink cell of a first cell group; transmitting, to the base station, second information indicating that the first information has been received; identifying, on the basis of the first information, whether or not, from among the at least one uplink cell, a first uplink cell has been activated; and if the first uplink cell has been activated, carrying out an uplink transmission via the first uplink cell.
Inventor(s): Anil AGIWAL of Suwon-si (KR) for samsung electronics co., ltd., Soenghun KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W76/27, H04W72/30
CPC Code(s): H04W76/27
Abstract: the present disclosure relates to a communication method and system for converging a 5th-generation (5g) communication system for supporting higher data rates beyond a 4th-generation (4g) system with a technology for internet of things (iot). the present disclosure may be applied to intelligent services based on the 5g communication technology and the iot-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. the present disclosure provides method and apparatus for managing system information in a wireless communication system.
Inventor(s): Jeongseok LEE of Suwon-si (KR) for samsung electronics co., ltd., Hyein PARK of Suwon-si (KR) for samsung electronics co., ltd., Jaedeok LIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H05K1/02
CPC Code(s): H05K1/0218
Abstract: an electronic device according to an embodiment includes a printed circuit board including a ground pad, an optical sensor disposed on the printed circuit board, and a shielding member covering the optical sensor. the shielding member includes a first adhesive layer attached on the optical sensor and the ground pad, a first shielding layer electrically connected to the ground pad and disposed on the first adhesive layer, and a first cover layer disposed on the first shielding layer, the first cover layer including a plurality of first particles configured to reflect or scatter light, a plurality of second particles configured to absorb the light, and a binder covering the plurality of first particles and the plurality of second particles.
Inventor(s): Joongyeon CHO of Suwon-si (KR) for samsung electronics co., ltd., Byounguk YOON of Suwon-si (KR) for samsung electronics co., ltd., Youngmin KANG of Suwon-si (KR) for samsung electronics co., ltd., Moonchul SHIN of Suwon-si (KR) for samsung electronics co., ltd., Yeonggyu YOON of Suwon-si (KR) for samsung electronics co., ltd., Seungjoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Junyoung CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H05K5/02
CPC Code(s): H05K5/0217
Abstract: an electronic device is provided. the electronic device includes a first housing, a second housing slidably coupled to the first housing in a first direction, a flexible display of which at least a part is drawn into or taken out of an accommodation space of the electronic device according to sliding of the second housing, a support member sliding by means of the sliding of the second housing and supports the flexible display, and a link structure connecting the first housing, the second housing, and the support member where sliding of the second housing and sliding of the support member are interlinked. the link structure includes a link member, a first connection part for connecting the link member to the support member, a second connection part connecting the link member to the first housing, and a third connection part slidably or rotatably connecting the link member to the second housing.
Inventor(s): KI-IL KIM of Suwon-si (KR) for samsung electronics co., ltd., Jung-gun YOU of Ansan-si (KR) for samsung electronics co., ltd., Gi-gwan PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B10/00, H01L21/8238, H01L27/092, H01L27/105, H01L29/78
CPC Code(s): H10B10/12
Abstract: a semiconductor device can include a field insulating film on a substrate and a fin-type pattern of a particular material, on the substrate, having a first sidewall and an opposing second sidewall. the fin-type pattern can include a first portion of the fin-type pattern that protrudes from an upper surface of the field insulating film and a second portion of the fin-type pattern disposed on the first portion. a third portion of the fin-type pattern can be disposed on the second portion where the third portion can be capped by a top rounded surface of the fin-type pattern and the first sidewall can have an undulated profile that spans the first, second and third portions.
20240224494. SEMICONDUCTOR MEMORY DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Kyunghwan Lee of Seoul (KR) for samsung electronics co., ltd., Yongseok Kim of Suwon-si (KR) for samsung electronics co., ltd., Ilgweon Kim of Busan (KR) for samsung electronics co., ltd., Huijung Kim of Seongnam-si (KR) for samsung electronics co., ltd., Sungwon Yoo of Hwaseong-si (KR) for samsung electronics co., ltd., Minhee Cho of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/00
Abstract: a semiconductor memory device includes: a first word line extending in a vertical direction; a second word line spaced apart from the first word line in a first horizontal direction and extending in the vertical direction; a first semiconductor pattern of a ring-shaped horizontal cross-section surrounding the first word line and constituting a portion of a first cell transistor; a second semiconductor pattern of a ring-shaped horizontal cross-section surrounding the second word line and constituting a portion of a second cell transistor; a cell capacitor between the first semiconductor pattern and the second semiconductor pattern and including a first electrode, a second electrode, and a capacitor dielectric film; a first bit line opposite the cell capacitor with respect to the first semiconductor pattern and extending in a second horizontal direction; and a second bit line opposite the cell capacitor with respect to the second semiconductor pattern.
Inventor(s): Jooncheol KIM of Suwon-si (KR) for samsung electronics co., ltd., Kang-Uk KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/315
Abstract: a semiconductor memory device including a substrate including a cell area and a peripheral area around the cell area, a cell area isolation film in the substrate and defining the cell area, a bit-line structure in the cell area, a peripheral gate structure in the peripheral area of the substrate, the peripheral gate structure including a peripheral gate conductive film, a peripheral spacer on a sidewall of the peripheral gate structure, an etch stop film on the peripheral spacer and spaced apart from the peripheral gate structure, a first peripheral insulating film around the peripheral gate structure on the substrate, and a peripheral interlayer insulating film covering the peripheral gate structure, the first peripheral insulating film, and the peripheral spacer, the peripheral interlayer insulating film including a material different from a material of the first peripheral insulating film, may be provided.
20240224502. SEMICONDUCTOR MEMORY DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Yangdoo Kim of Suwon-si (KR) for samsung electronics co., ltd., Sangwuk Park of Suwon-si (KR) for samsung electronics co., ltd., Minkyu Suh of Suwon-si (KR) for samsung electronics co., ltd., Geonyeop Lee of Suwon-si (KR) for samsung electronics co., ltd., Dokeun Lee of Suwon-si (KR) for samsung electronics co., ltd., Jungpyo Hong of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/315
Abstract: a semiconductor memory device includes a substrate having a memory cell region and a plurality of capacitor structures in the memory cell region of the substrate, each of the plurality of capacitor structures including a lower electrode, a capacitor dielectric layer, and an upper electrode, wherein the lower electrode includes a first lower electrode, a second lower electrode above the first lower electrode, and a connecting lower electrode connecting a top end of the first lower electrode to a bottom end of the second lower electrode, wherein the upper electrode includes a bent upper electrode overlapping the connecting lower electrode in a horizontal direction, and the bent upper electrode includes a bent portion.
20240224503. SEMICONDUCTOR DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Cheoljin Cho of Suwon-si (KR) for samsung electronics co., ltd., Yukyung Shin of Suwon-si (KR) for samsung electronics co., ltd., Changhwa Jung of Suwon-si (KR) for samsung electronics co., ltd., Jieun Lee of Suwon-si (KR) for samsung electronics co., ltd., Jayun Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/315
Abstract: a semiconductor device includes a substrate, a first electrode disposed above the substrate, a multilayer dielectric structure configured to cover the first electrode, and a second electrode configured to cover the multilayer dielectric structure. the multilayer dielectric structure includes a plurality of dielectric films, a first dielectric film of the plurality of dielectric films includes crystalline tioor crystalline srtio, and a second dielectric film of the plurality of dielectric films is in contact with the first dielectric film and includes a high-k dielectric film having a tetragonal crystal structure.
20240224507. SEMICONDUCTOR DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jongmin Kim of Suwon-si (KR) for samsung electronics co., ltd., Taejin Park of Suwon-si (KR) for samsung electronics co., ltd., Chansic Yoon of Suwon-si (KR) for samsung electronics co., ltd., Kiseok Lee of Suwon-si (KR) for samsung electronics co., ltd., Hongjun Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00, H01L29/417, H01L29/423
CPC Code(s): H10B12/34
Abstract: a semiconductor device includes an active pattern on a substrate, a gate structure, a conductive filling pattern and a bit line structure on the conductive filling pattern. the gate structure extends through an upper portion of the active pattern, and has an upper surface higher than an upper surface of the active pattern. the conductive filling pattern includes a lower portion on the active pattern and an upper portion thereon. the lower portion contacts an upper sidewall of the gate structure, and the upper portion has a width greater than a width of the lower portion.
Inventor(s): Seunghee LEE of Suwon-si (KR) for samsung electronics co., ltd., Jaekyeong JEONG of Seoul (KR) for samsung electronics co., ltd., Seungwan SEO of Seoul (KR) for samsung electronics co., ltd., Yongsuk TAK of Suwon-si (KR) for samsung electronics co., ltd., Yurim KIM of Suwon-si (KR) for samsung electronics co., ltd., Teawon KIM of Suwon-si (KR) for samsung electronics co., ltd., Joohee JEONG of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/485
Abstract: a field-effect transistor includes an insulating barrier layer on a substrate, a gate electrode extending on the insulating barrier layer, a gate insulating layer covering opposite side surfaces and a top surface of the gate electrode, an oxide semiconductor layer on the gate insulating layer and including at least one metal element selected from indium (in) and zinc (zn), and a source structure and a drain structure separated from each other, the source structure and the drain structure electrically connected to the oxide semiconductor layer. each of the source structure and the drain structure includes an indium gallium tin oxide (igto) film on the oxide semiconductor layer, a conductive metal nitride film on the igto film, one of a source electrode and a drain electrode on the conductive metal nitride film, and a top capping layer on a top surface of one of the source electrode and the drain electrode.
Inventor(s): Junhyoung KIM of Suwon-si (KR) for samsung electronics co., ltd., Jimo GU of Suwon-si (KR) for samsung electronics co., ltd., Jiyoung KIM of Suwon-si (KR) for samsung electronics co., ltd., Sukkang SUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B41/27, G11C16/04, H01L25/065, H10B41/10, H10B41/35, H10B43/10, H10B43/27, H10B43/35, H10B80/00
CPC Code(s): H10B41/27
Abstract: an integrated circuit device includes a substrate including a memory cell area and a connection area, a gate stack including a plurality of gate electrodes apart from each other in a vertical direction on the substrate, a plurality of gate connection openings arranged in the connection area to extend inward from an upper surface of the gate stack, one of the plurality of gate electrodes being exposed at a bottom surface of each of the plurality of gate connection openings, a plurality of gate connection structures respectively covering at least inner side surfaces of the plurality of gate connection openings, each of the plurality of gate connection structures being connected with the one gate electrode, and a plurality of gate contacts respectively connected to upper ends of the plurality of gate connection structures.
20240224521. VERTICAL SEMICONDUCTOR DEVICES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Shinhwan KANG of Suwon-si (KR) for samsung electronics co., ltd., Younghwan SON of Suwon-si (KR) for samsung electronics co., ltd., Haemin LEE of Suwon-si (KR) for samsung electronics co., ltd., Kohji KANAMORI of Suwon-si (KR) for samsung electronics co., ltd., Jeehoon HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/27, H10B41/10, H10B41/27, H10B43/10, H10B43/35
CPC Code(s): H10B43/27
Abstract: a vertical semiconductor device may include a stacked structure and a plurality of channel structures. the stacked structure may include insulation layers and gate patterns alternately and repeatedly stacked on a substrate. the stacked structure may extend in a first direction parallel to an upper surface of the substrate. the gate patterns may include at least ones of first gate patterns. the stacked structure may include a sacrificial pattern between the first gate patterns. the channel structures may pass through the stacked structure. each of the channel structures may extend to the upper surface of the substrate, and each of the channel structures may include a charge storage structure and a channel. ones of the channel structures may pass through the sacrificial pattern in the stacked structure to the upper surface of the substrate, and may extend to the upper surface of the substrate.
20240224522. NON-VOLATILE MEMORY DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Homoon SHIN of Suwon-si (KR) for samsung electronics co., ltd., Jonghoon PARK of Suwon-si (KR) for samsung electronics co., ltd., Juyoung YANG of Suwon-si (KR) for samsung electronics co., ltd., Jungseok HWANG of Suwon-si (KR) for samsung electronics co., ltd., Sunghoon KIM of Suwon-si (KR) for samsung electronics co., ltd., Pansuk KWAK of Seoul (KR) for samsung electronics co., ltd., Ahreum KIM of Suwon-si (KR) for samsung electronics co., ltd., Myunghun LEE of Suwon-si (KR) for samsung electronics co., ltd., Changyeon YU of Suwon-si (KR) for samsung electronics co., ltd., Mookyu BAE of Suwon-si (KR) for samsung electronics co., ltd., Sungun LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/27, H10B41/27, H10B41/41, H10B43/40
CPC Code(s): H10B43/27
Abstract: a non-volatile memory device may include a memory cell region and a peripheral circuit region positioned below the memory cell region in the vertical direction. the memory cell region may include a plurality of channel structures extending in a vertical direction, a first metal layer over the plurality of channel structures, a first capping layer over the first metal layer, a first upper insulation layer over the first capping layer, and at least one first dummy contact penetrating through the first capping layer. the first metal layer may include a plurality of bit lines and at least one dummy bit line. the bit lines may be respectively connected to the plurality of channel structures. the at least one first dummy contact may be on the at least one dummy bit line and may provide a migration path for hydrogen ions in the first upper insulation layer.
Inventor(s): Dongsung Choi of Suwon-si (KR) for samsung electronics co., ltd., Byongju Kim of Suwon-si (KR) for samsung electronics co., ltd., Wonjun Park of Suwon-si (KR) for samsung electronics co., ltd., Jaemin Jung of Suwon-si (KR) for samsung electronics co., ltd., Changheon Cheon of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/27, H10B41/27, H10B41/41, H10B43/40
CPC Code(s): H10B43/27
Abstract: a non-volatile memory device includes a substrate, a mold structure including a plurality of gate electrodes and a plurality of mold insulating layers, wherein the plurality of gate electrodes are stacked in a step shape, a channel structure that extends through the mold structure, and a cell contact that extends through the mold structure, the cell contact is connected to a first gate electrode, and the cell contact is not electrically connected to a second gate electrode among the plurality of gate electrodes, wherein the first gate electrode includes: an extension portion; a pad portion having a vertical thickness greater than a vertical thickness of the extension portion; and a connection portion that electrically connects the pad portion to the cell contact, the connection portion has a vertical thickness less than a vertical thickness of the pad portion, and one or more first insulating rings on the connection portion.
Inventor(s): Hyo Joon Ryu of Hwaseong-si (KR) for samsung electronics co., ltd., Young Hwan Son of Hwaseong-si (KR) for samsung electronics co., ltd., Seo-Goo Kang of Seoul (KR) for samsung electronics co., ltd., Jung Hoon Jun of Hwaseong-si (KR) for samsung electronics co., ltd., Kohji Kanamori of Seongnam-si (KR) for samsung electronics co., ltd., Jee Hoon Han of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/27, H01L23/535, H10B41/27, H10B41/41, H10B43/40
CPC Code(s): H10B43/27
Abstract: a semiconductor memory includes metallic lines on a substrate and including an uppermost metallic line, a semiconductor conduction line on the uppermost metallic line, a vertical structure penetrating the semiconductor conduction line and metallic lines, and including a vertical structure that includes an upper channel film, a first lower channel film, and an upper connection channel film connecting the upper channel film and the first lower channel film between a bottom of the semiconductor conduction line and a bottom of the uppermost metallic line, and a first cutting line through the metallic lines and the semiconductor conduction line, and including a first upper cutting line through the semiconductor conduction line, and a first lower cutting line through the plurality of metallic lines, a width of the first upper cutting line being greater than a width of an extension line of a sidewall of the first lower cutting line.
20240224530. VERTICAL NAND FLASH MEMORY DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Seungdam HYUN of Suwon-si (KR) for samsung electronics co., ltd., Kyunghun KIM of Suwon-si (KR) for samsung electronics co., ltd., Sunho KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyungyung KIM of Suwon-si (KR) for samsung electronics co., ltd., Kwangmin PARK of Suwon-si (KR) for samsung electronics co., ltd., Seungyeul YANG of Suwon-si (KR) for samsung electronics co., ltd., Gukhyon YON of Suwon-si (KR) for samsung electronics co., ltd., Minhyun LEE of Suwon-si (KR) for samsung electronics co., ltd., Seokhoon CHOI of Suwon-si (KR) for samsung electronics co., ltd., Hoseok HEO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/35, G11C16/04, H01L29/423, H10B43/10, H10B43/27
CPC Code(s): H10B43/35
Abstract: a vertical nand flash memory device includes a plurality of cell arrays, where each cell array of the plurality of cell arrays includes a channel layer, a charge trap layer provided on the channel layer, the charge trap layer including a matrix comprising a dielectric and a charge trap material in the matrix and including anti-ferroelectric nanocrystals or ferroelectric nanocrystals, and a plurality of gate electrodes provided on the charge trap layer.
Inventor(s): Dooho CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/35, H01L23/00, H01L25/065, H01L25/18, H10B41/27, H10B41/35, H10B43/27, H10B80/00
CPC Code(s): H10B43/35
Abstract: a memory device including a memory block including a plurality of wordlines stacked in a vertical direction and extending in a first horizontal direction; and a pass transistor block including a plurality of pass transistors stacked in the vertical direction, wherein the plurality of pass transistors are configured to transmit a plurality of driving signals respectively to the plurality of wordlines, wherein each pass transistor of the plurality of pass transistors includes: a body region having an upper surface and a lower surface which face in the vertical direction, a first side surface and a second side surface which face in the first horizontal direction, and a front surface and a rear surface which face in a second horizontal direction; a first source-drain electrode on the first side surface, and configured to receive a corresponding driving signal of the plurality of driving signals; a second source-drain electrode on the second side surface, wherein the second source-drain electrode is electrically connected to a side surface of a corresponding wordline of the plurality of wordlines; and a first vertical gate electrode on a first surface from among the front surface and the rear surface.
Inventor(s): Jumi BAK of Suwon-si (KR) for samsung electronics co., ltd., Eun- Young LEE of Suwon-si (KR) for samsung electronics co., ltd., Sunggil KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/40, G11C16/04, H01L25/065, H10B41/10, H10B41/27, H10B41/35, H10B41/41, H10B43/10, H10B43/27, H10B43/35, H10B80/00
CPC Code(s): H10B43/40
Abstract: a semiconductor device includes a semiconductor substrate, a peripheral circuit structure including peripheral circuits integrated on the semiconductor substrate and first bonding pads connected to the peripheral circuits, and a cell array structure including second bonding pads bonded to the first bonding pads. the cell array structure includes separation structures extending in a first direction, a stack disposed between the separation structures, a source conductive pattern disposed on the stack, vertical structures penetrating the stack and connected to the source conductive pattern, and reflection structures, which are vertically spaced apart from the source conductive pattern and are overlapped with the separation structures. the stack includes interlayer insulating layers and gate patterns, which are vertically and alternately stacked on top of one another.
Inventor(s): Changsun Hwang of Suwon-si (KR) for samsung electronics co., ltd., Youngjin Kwon of Suwon-si (KR) for samsung electronics co., ltd., Gihwan Kim of Suwon-si (KR) for samsung electronics co., ltd., Hansol Seok of Suwon-si (KR) for samsung electronics co., ltd., Dongseog Eun of Suwon-si (KR) for samsung electronics co., ltd., Jongheun Lim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/40, H01L23/522, H10B41/27, H10B41/41, H10B43/27
CPC Code(s): H10B43/40
Abstract: an integrated circuit device includes: a substrate having a cell region, a peripheral circuit region, and an interconnection region between the cell region and the peripheral circuit region; a first cell stack structure and a second cell stack structure on the first cell stack structure, each including a plurality of insulating layers and a plurality of word line structures alternately stacked on the substrate; and a dummy stack structure located at a same vertical level as the second cell stack structure, and including a plurality of dummy insulating layers and a plurality of dummy support layers alternately stacked in the peripheral circuit region.
Inventor(s): JUHYUNG KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B51/20, H10B51/30
CPC Code(s): H10B51/20
Abstract: a semiconductor memory device includes a stack disposed on a substrate and vertical structures that penetrate the stack. the stack includes electrodes and cell insulating layers that are alternately stacked on top of each other. each of the vertical structures includes a vertical channel pattern that penetrates the stack and a data storage structure disposed between the electrodes and the vertical channel pattern. the data storage structure includes first ferroelectric patterns that are respectively disposed on side surfaces of the electrodes, and first conductive patterns that are disposed between the first ferroelectric patterns and the vertical channel pattern. the first ferroelectric patterns and the first conductive patterns are spaced apart from each other in a direction perpendicular to a top surface of the substrate with the cell insulating layers interposed therebetween.
Inventor(s): KIHONG JEONG of Suwon-si (KR) for samsung electronics co., ltd., Sangsub SONG of Suwon-si (KR) for samsung electronics co., ltd., Heewoo AN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B80/00, H01L25/065, H01L25/18
CPC Code(s): H10B80/00
Abstract: a processor chip for a semiconductor package includes a substrate having a first surface and a second surface opposite to the first surface and mounted on a package substrate, and a plurality of chip pads disposed on the first surface of the substrate and electrically connected to the package substrate, wherein the first surface is divided into a first area and a second area, the first area includes four sides of the first surface and the second area includes a center of the first surface, and the plurality of chip pads are located on the first area and are arranged on at least a portion of a side of the first surface in a line along the side.
Inventor(s): Seon-Jeong LIM of Suwon-si (KR) for samsung electronics co., ltd., Hui Joon PARK of Seoul (KR) for samsung electronics co., ltd., In KIM of Suwon-si (KR) for samsung electronics co., ltd., Han Sol PARK of Seoul (KR) for samsung electronics co., ltd., Jihyeon HEO of Seoul (KR) for samsung electronics co., ltd., Hyerim HONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K30/10, H10K39/00, H10K39/32, H10K39/38, H10K85/50, H10K85/60
CPC Code(s): H10K30/10
Abstract: a perovskite photodiode includes a first electrode and a second electrode, and a perovskite photoelectric conversion layer between the first electrode and the second electrode and including a pb-free perovskite, and an auxiliary layer between the first electrode and the perovskite photoelectric conversion layer, and including a compound represented by chemical formula 1.
Inventor(s): Seon-Jeong LIM of Suwon-si (KR) for samsung electronics co., ltd., Hui Joon PARK of Seoul (KR) for samsung electronics co., ltd., In KIM of Suwon-si (KR) for samsung electronics co., ltd., Han Sol PARK of Seoul (KR) for samsung electronics co., ltd., Jihyeon HEO of Seoul (KR) for samsung electronics co., ltd., Hyerim HONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K30/10, H10K39/00, H10K39/32, H10K39/38, H10K85/50, H10K85/60
CPC Code(s): H10K30/10
Abstract:
Inventor(s): Seon-Jeong LIM of Suwon-si (KR) for samsung electronics co., ltd., Hui Joon PARK of Seoul (KR) for samsung electronics co., ltd., In KIM of Suwon-si (KR) for samsung electronics co., ltd., Han Sol PARK of Seoul (KR) for samsung electronics co., ltd., Jihyeon HEO of Seoul (KR) for samsung electronics co., ltd., Hyerim HONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K30/10, H10K39/00, H10K39/32, H10K39/38, H10K85/50, H10K85/60
CPC Code(s): H10K30/10
Abstract: in chemical formula 1, x, xand rto rare as defined in the specification.
Inventor(s): Chan Su KIM of Suwon-si (KR) for samsung electronics co., ltd., Sung Woo KIM of Suwon-si (KR) for samsung electronics co., ltd., Ilyoung LEE of Suwon-si (KR) for samsung electronics co., ltd., You Jung CHUNG of Suwon-si (KR) for samsung electronics co., ltd., Moon Gyu HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K50/115, H10K50/16, H10K71/12
CPC Code(s): H10K50/115
Abstract: disclosed are an electroluminescent device including a first electrode and a second electrode spaced apart from each other; a light-emitting layer disposed between the first and second electrodes; and an electron transport layer between the light-emitting layer and the second electrode; a production method thereof; and a display device including the same. the light-emitting layer includes a semiconductor nanoparticle, the electron transport layer includes a zinc oxide nanoparticle having a size of 1 nm or more to 15 nm or less, and the zinc oxide nanoparticle further includes magnesium and aluminum, and an amount of aluminum in the zinc oxide nanoparticle is greater than or equal to about 0.5 mol % and less than or equal to about 30 mol % based on a total amount of zinc, magnesium, and aluminum.
Inventor(s): Won Sik YOON of Suwon-si (KR) for samsung electronics co., ltd., Ju Hyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Ha Il KWON of Suwon-si (KR) for samsung electronics co., ltd., Kwang Hee KIM of Suwon-si (KR) for samsung electronics co., ltd., Taehyung KIM of Suwon-si (KR) for samsung electronics co., ltd., Su Jin PARK of Suwon-si (KR) for samsung electronics co., ltd., Dae Young CHUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K50/115, H10K50/15, H10K50/16
CPC Code(s): H10K50/115
Abstract: a quantum dot device including an anode and a cathode, a light emitting layer disposed between the anode and the cathode, the light emitting layer comprising quantum dots, a first hole auxiliary layer disposed on the anode, the first hole auxiliary layer including poly(3,4-ethylenedioxythiophene)-polystyrenesulfonate or a derivative thereof (pedot:pss), a second hole auxiliary layer disposed on the first hole auxiliary layer and including a hole transport material different from the pedot:pss, wherein the light emitting layer is disposed on the second hole auxiliary layer, wherein the first hole auxiliary layer has a first surface facing the anode and a second surface facing the second hole auxiliary layer, and the second surface includes a surface modification region including a surface modification material having a carboxylic acid group, a phosphonic acid group, a sulfonic acid group, or a salt thereof. an electronic device that includes the quantum dot device.
Inventor(s): Sangah GAM of Suwon-si (KR) for samsung electronics co., ltd., Jiyoung JUNG of Suwon-si (KR) for samsung electronics co., ltd., Youngjun YUN of Suwon-si (KR) for samsung electronics co., ltd., Gae Hwang LEE of Suwon-si (KR) for samsung electronics co., ltd., Bang-Lin LEE of Suwon-si (KR) for samsung electronics co., ltd., Ajeong CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/10, C08G61/12, C08J5/18, H10K10/20, H10K10/46, H10K30/50
CPC Code(s): H10K85/113
Abstract: disclosed are a polymer including a structural unit represented by chemical formula 1, a structural unit represented by chemical formula 2, and a structural unit represented by chemical formula 3, an organic semiconductor material and a thin film including the polymer, and an electronic device including the thin film:
Inventor(s): Sangah GAM of Suwon-si (KR) for samsung electronics co., ltd., Jiyoung JUNG of Suwon-si (KR) for samsung electronics co., ltd., Youngjun YUN of Suwon-si (KR) for samsung electronics co., ltd., Gae Hwang LEE of Suwon-si (KR) for samsung electronics co., ltd., Bang-Lin LEE of Suwon-si (KR) for samsung electronics co., ltd., Ajeong CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/10, C08G61/12, C08J5/18, H10K10/20, H10K10/46, H10K30/50
CPC Code(s): H10K85/113
Abstract:
Inventor(s): Ohyun Kwon of Suwon-si (KR) for samsung electronics co., ltd., Bumwoo Park of Suwon-si (KR) for samsung electronics co., ltd., Hweayoon Kim of Suwon-si (KR) for samsung electronics co., ltd., Yongsuk Cho of Suwon-si (KR) for samsung electronics co., ltd., Byoungki Choi of Suwon-si (KR) for samsung electronics co., ltd., Jongwon Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/30, C07F15/00, C09K11/06, H10K85/40
CPC Code(s): H10K85/342
Abstract: an organometallic compound represented by formula 1:
Inventor(s): Ohyun Kwon of Suwon-si (KR) for samsung electronics co., ltd., Bumwoo Park of Suwon-si (KR) for samsung electronics co., ltd., Hweayoon Kim of Suwon-si (KR) for samsung electronics co., ltd., Yongsuk Cho of Suwon-si (KR) for samsung electronics co., ltd., Byoungki Choi of Suwon-si (KR) for samsung electronics co., ltd., Jongwon Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/30, C07F15/00, C09K11/06, H10K85/40
CPC Code(s): H10K85/342
Abstract:
m(l)(l) formula 1
Inventor(s): Ohyun Kwon of Suwon-si (KR) for samsung electronics co., ltd., Bumwoo Park of Suwon-si (KR) for samsung electronics co., ltd., Hweayoon Kim of Suwon-si (KR) for samsung electronics co., ltd., Yongsuk Cho of Suwon-si (KR) for samsung electronics co., ltd., Byoungki Choi of Suwon-si (KR) for samsung electronics co., ltd., Jongwon Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/30, C07F15/00, C09K11/06, H10K85/40
CPC Code(s): H10K85/342
Abstract: wherein mis a transition metal, lis a ligand represented by formula 1a, lis a ligand represented by formula 1b, and n1 and n2 are each independently 1 or 2,
Inventor(s): Ohyun Kwon of Suwon-si (KR) for samsung electronics co., ltd., Bumwoo Park of Suwon-si (KR) for samsung electronics co., ltd., Hweayoon Kim of Suwon-si (KR) for samsung electronics co., ltd., Yongsuk Cho of Suwon-si (KR) for samsung electronics co., ltd., Byoungki Choi of Suwon-si (KR) for samsung electronics co., ltd., Jongwon Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/30, C07F15/00, C09K11/06, H10K85/40
CPC Code(s): H10K85/342
Abstract:
Inventor(s): Ohyun Kwon of Suwon-si (KR) for samsung electronics co., ltd., Bumwoo Park of Suwon-si (KR) for samsung electronics co., ltd., Hweayoon Kim of Suwon-si (KR) for samsung electronics co., ltd., Yongsuk Cho of Suwon-si (KR) for samsung electronics co., ltd., Byoungki Choi of Suwon-si (KR) for samsung electronics co., ltd., Jongwon Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/30, C07F15/00, C09K11/06, H10K85/40
CPC Code(s): H10K85/342
Abstract: wherein xis c or n, xis c or n, xis c(r) or n, xis c(r) or n, xis c(r) or n, xis c(r) or n, xis c(r) or n, xis c(r) or n, yis c(r)(r), si(r)(r), or ge(r)(r), ring cyis a c-ccarbocyclic group or a c-cheterocyclic group, one of rand r, rand r, or rand rare bonded together to form a substituted or unsubstituted c-ccarbocyclic group or a substituted or unsubstituted c-cheterocyclic group, and the other substituent groups are as defined herein.
Inventor(s): Ohyun Kwon of Suwon-si (KR) for samsung electronics co., ltd., Bumwoo Park of Suwon-si (KR) for samsung electronics co., ltd., Sungmin Kim of Suwon-si (KR) for samsung electronics co., ltd., Yong Joo Lee of Suwon-si (KR) for samsung electronics co., ltd., Byoungki Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/30, C07F15/00, C09K11/06, H10K85/40
CPC Code(s): H10K85/342
Abstract: an organometallic compound represented by formula 1:
Inventor(s): Ohyun Kwon of Suwon-si (KR) for samsung electronics co., ltd., Bumwoo Park of Suwon-si (KR) for samsung electronics co., ltd., Sungmin Kim of Suwon-si (KR) for samsung electronics co., ltd., Yong Joo Lee of Suwon-si (KR) for samsung electronics co., ltd., Byoungki Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/30, C07F15/00, C09K11/06, H10K85/40
CPC Code(s): H10K85/342
Abstract:
m(l)(l) formula 1
Inventor(s): Ohyun Kwon of Suwon-si (KR) for samsung electronics co., ltd., Bumwoo Park of Suwon-si (KR) for samsung electronics co., ltd., Sungmin Kim of Suwon-si (KR) for samsung electronics co., ltd., Yong Joo Lee of Suwon-si (KR) for samsung electronics co., ltd., Byoungki Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/30, C07F15/00, C09K11/06, H10K85/40
CPC Code(s): H10K85/342
Abstract: wherein mis a transition metal, lis a ligand represented by formula 1a, lis a ligand represented by formula 1b, and n1 and n2 are each independently 1 or 2,
Inventor(s): Ohyun Kwon of Suwon-si (KR) for samsung electronics co., ltd., Bumwoo Park of Suwon-si (KR) for samsung electronics co., ltd., Sungmin Kim of Suwon-si (KR) for samsung electronics co., ltd., Yong Joo Lee of Suwon-si (KR) for samsung electronics co., ltd., Byoungki Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/30, C07F15/00, C09K11/06, H10K85/40
CPC Code(s): H10K85/342
Abstract:
Inventor(s): Ohyun Kwon of Suwon-si (KR) for samsung electronics co., ltd., Bumwoo Park of Suwon-si (KR) for samsung electronics co., ltd., Sungmin Kim of Suwon-si (KR) for samsung electronics co., ltd., Yong Joo Lee of Suwon-si (KR) for samsung electronics co., ltd., Byoungki Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/30, C07F15/00, C09K11/06, H10K85/40
CPC Code(s): H10K85/342
Abstract: wherein xis c(r), xis c(r), and rand rare bonded together to form a group represented by formula 2; xis c(r), xis c(r), and rand rare bonded together to form a group represented by formula 2; or xis c(r), xis c(r), and rand rare bonded together to form a group represented by formula 2, ring cyand ring cyare condensed together, and the remaining substituent groups in formulae 1a, 1b, and 2 are as described herein.
Inventor(s): Moon Gyu HAN of Suwon-si (KR) for samsung electronics co., ltd., Dae Young CHUNG of Suwon-si (KR) for samsung electronics co., ltd., Kwanghee KIM of Suwon-si (KR) for samsung electronics co., ltd., Eun Joo JANG of Suwon-si (KR) for samsung electronics co., ltd., Chan Su KIM of Suwon-si (KR) for samsung electronics co., ltd., Kun Su PARK of Suwon-si (KR) for samsung electronics co., ltd., Won Sik YOON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K85/60, H10K50/115, H10K50/15, H10K50/16, H10K50/17, H10K71/00, H10K71/12, H10K102/00
CPC Code(s): H10K85/633
Abstract: an electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode and including a plurality of quantum dots and a first hole transporting material having a substituted or unsubstituted c to c alkyl group attached to a backbone structure; a hole transport layer disposed between the emission layer and the first electrode and including a second hole transporting material; and an electron transport layer disposed between the emission layer and the second electrode.
Samsung Electronics Co., Ltd. patent applications on July 4th, 2024
- Samsung Electronics Co., Ltd.
- A47J36/32
- A23L5/10
- H04L12/28
- CPC A47J36/321
- Samsung electronics co., ltd.
- A47L5/28
- A47L9/00
- A47L9/12
- CPC A47L5/28
- A47L15/42
- H04N9/31
- CPC A47L15/4293
- A61B5/01
- A61B5/00
- G01K13/20
- CPC A61B5/01
- A61B5/0225
- A61B5/024
- CPC A61B5/02255
- A63B21/00
- A63B24/00
- A63B71/06
- CPC A63B21/00069
- B01D53/32
- B01D45/08
- B01D47/06
- B01D50/40
- B03C3/01
- B03C3/08
- B03C3/09
- B03C3/47
- B03C3/49
- CPC B01D53/323
- B23K3/06
- B23K3/08
- H05K3/12
- CPC B23K3/0638
- B24B37/26
- CPC B24B37/26
- B24B37/32
- B24B37/04
- H01L21/306
- CPC B24B37/32
- B25J11/00
- B25J9/16
- CPC B25J11/0005
- C09K11/88
- C01G9/00
- C09K11/56
- B82Y20/00
- B82Y30/00
- B82Y40/00
- CPC C09K11/883
- C11D3/37
- C11D3/20
- C11D3/43
- C11D11/00
- CPC C11D3/3746
- C23C16/455
- C23C16/458
- H01L21/768
- CPC C23C16/45557
- C30B25/16
- C30B25/12
- CPC C30B25/16
- D06F33/42
- B01D29/11
- B01D29/56
- B01D29/60
- B01D29/64
- B01D35/147
- B01D61/14
- B01D61/18
- B01D61/22
- D06F33/43
- D06F33/47
- D06F39/08
- D06F39/10
- D06F103/16
- D06F103/18
- D06F103/42
- D06F103/44
- D06F105/08
- D06F105/58
- CPC D06F33/42
- F16M11/10
- G03B21/14
- CPC F16M11/10
- F24F1/42
- CPC F24F1/42
- F25D17/04
- F25D25/02
- CPC F25D17/045
- F25D17/06
- F25D17/08
- CPC F25D17/065
- F25D23/02
- E05F15/619
- CPC F25D23/028
- A47B96/20
- G01J5/20
- CPC G01J5/20
- G01N15/02
- CPC G01N15/0205
- G01N21/95
- H01L21/66
- CPC G01N21/9501
- G01N21/88
- G01N21/956
- G01S7/4865
- G01S7/484
- G01S7/4861
- G01S17/10
- CPC G01S7/4866
- G01S13/02
- G01S5/02
- G01S13/76
- H04B1/7163
- H04W4/029
- H04W12/104
- H04W12/122
- H04W12/64
- CPC G01S13/0209
- G03F1/24
- G03F1/54
- H01L21/027
- H01L21/311
- CPC G03F1/24
- G03F1/72
- G01Q30/04
- G01Q40/02
- G01Q60/38
- G06T7/00
- CPC G03F1/72
- G03F7/00
- CPC G03F7/70633
- G03F1/42
- CPC G03F7/7085
- G05D1/247
- A47L9/28
- A47L11/40
- G01S17/931
- G05D1/661
- G05D105/10
- CPC G05D1/247
- G06F1/08
- CPC G06F1/08
- G06F1/16
- G06F1/18
- G09G3/3208
- H01Q1/24
- H04M1/72403
- H04W12/72
- CPC G06F1/165
- G06F1/3234
- G01R21/133
- G06F1/26
- G06F1/3206
- G06F1/324
- CPC G06F1/3268
- G06F3/01
- G02B27/01
- G06V40/19
- CPC G06F3/013
- G06F3/06
- CPC G06F3/0604
- CPC G06F3/0611
- CPC G06F3/0631
- CPC G06F3/064
- CPC G06F3/0655
- CPC G06F3/0656
- G06F3/14
- CPC G06F3/1446
- G06T11/00
- G06V20/20
- G06F3/0482
- CPC G06F3/1454
- G06F3/16
- G10L15/22
- G10L15/26
- CPC G06F3/167
- G06F9/30
- G06F9/34
- G06F9/38
- G06F13/16
- CPC G06F9/3004
- CPC G06F9/3836
- G06F9/54
- CPC G06F9/542
- G06F11/14
- CPC G06F11/1479
- G06F12/08
- G06N3/0455
- G06N3/084
- CPC G06F12/08
- G06F12/0891
- CPC G06F12/0891
- G06F21/62
- G06F21/33
- CPC G06F21/6245
- G06F21/79
- G06F21/60
- G06F21/74
- CPC G06F21/79
- G06F30/392
- CPC G06F30/392
- G06N20/00
- G06K19/077
- G06K19/06
- CPC G06K19/07747
- G06N3/0495
- CPC G06N3/0495
- G06N3/063
- G06F7/485
- G06F7/523
- CPC G06N3/063
- G06N3/098
- CPC G06N3/098
- G06Q30/0211
- G06Q30/0207
- CPC G06Q30/0211
- G06T3/40
- CPC G06T3/4046
- G06T5/20
- G06T5/40
- G06T7/90
- G06V10/74
- CPC G06T5/20
- G06T5/00
- G06T3/00
- G06T5/50
- CPC G06T5/002
- G06T5/70
- G06T5/60
- G06T7/13
- G06V10/44
- G06V10/77
- CPC G06T5/70
- CPC G06T5/009
- G06T11/20
- G06T17/00
- CPC G06T7/0002
- G06T7/149
- CPC G06T7/149
- G06T7/246
- H04N23/60
- CPC G06T7/248
- G06T7/73
- CPC G06T7/73
- H04N7/015
- CPC G06T11/001
- G06T11/60
- G06T13/40
- G06T13/80
- CPC G06T11/60
- G06T13/20
- G06T19/20
- G06V40/16
- G06V40/20
- CPC G06T13/40
- G06V10/764
- CPC G06V10/764
- G06T7/11
- G06V10/40
- CPC G06V20/20
- G06V30/24
- G06V30/14
- G06V30/148
- G06V30/19
- G06V30/30
- CPC G06V30/24
- G07C5/08
- G06F1/3231
- CPC G07C5/0866
- G09G3/00
- G01K13/00
- G06F3/04845
- G06F3/0488
- CPC G09G3/035
- G10L15/00
- G10L13/08
- G10L15/04
- CPC G10L15/005
- G10L21/038
- CPC G10L21/038
- G11B27/34
- G06F3/04842
- G11B27/034
- CPC G11B27/34
- G11C7/10
- H03F3/45
- H03K5/24
- H03M1/06
- CPC G11C7/1048
- G11C7/22
- CPC G11C7/22
- G11C11/406
- CPC G11C11/40615
- G11C11/4091
- G11C11/4094
- CPC G11C11/4091
- G11C11/4096
- G11C11/4074
- G11C11/408
- CPC G11C11/4096
- G11C16/04
- H01L29/16
- H01L29/18
- H10B43/10
- H10B43/27
- H10B43/35
- CPC G11C16/0483
- G11C16/08
- G11C16/10
- G11C16/12
- CPC G11C16/08
- G11C16/26
- CPC G11C16/26
- G11C16/34
- G11C16/30
- CPC G11C16/3427
- G11C29/00
- CPC G11C29/76
- G16H40/60
- G16H20/70
- CPC G16H40/60
- H01L21/033
- H01L21/308
- H01L29/423
- H01L29/66
- CPC H01L21/0337
- H01L21/67
- B65B11/58
- B65B51/00
- B65B57/00
- CPC H01L21/67
- G01R31/28
- CPC H01L22/12
- G03F1/70
- H01L21/3213
- CPC H01L22/20
- G01B11/06
- CPC H01L22/26
- H01L23/58
- CPC H01L22/34
- H01L23/31
- H01L23/00
- H01L23/29
- H01L23/498
- H01L25/065
- H01L25/18
- H01L21/56
- CPC H01L23/3192
- H01L23/48
- H01L21/48
- H01L23/538
- CPC H01L23/481
- H01L25/10
- CPC H01L23/49816
- CPC H01L23/49822
- CPC H01L23/49838
- H01L23/522
- H01L23/528
- H10B41/10
- H10B41/27
- H10B41/35
- H10B80/00
- CPC H01L23/5226
- CPC H01L23/528
- H10B41/40
- H10B43/40
- CPC H01L23/5283
- CPC H01L23/5381
- H01L23/10
- CPC H01L23/5386
- CPC H01L24/08
- CPC H01L24/14
- CPC H01L24/29
- CPC H01L25/0652
- CPC H01L25/0657
- H01L25/00
- CPC H01L25/18
- H01L27/02
- H01L29/74
- CPC H01L27/0248
- H02H9/04
- CPC H01L27/0262
- H01L27/092
- H01L21/285
- H01L21/8238
- H01L29/06
- H01L29/08
- H01L29/40
- H01L29/417
- H01L29/775
- CPC H01L27/092
- H01L27/146
- CPC H01L27/14603
- CPC H01L27/14614
- CPC H01L27/14629
- CPC H01L27/1463
- CPC H01L27/14636
- H01G4/30
- CPC H01L28/65
- H01L29/786
- CPC H01L29/0673
- CPC H01L29/41733
- H01L29/45
- CPC H01L29/41766
- H01L21/02
- H01L29/161
- CPC H01L29/66439
- H10B10/00
- CPC H01L29/7869
- H01L29/78
- CPC H01L29/78696
- H01L33/10
- H01L33/30
- H01L33/52
- CPC H01L33/10
- H01M4/62
- H01M4/131
- H01M4/1391
- H01M4/36
- H01M4/525
- H01M10/052
- H01M10/0562
- CPC H01M4/62
- H01M4/75
- H01M10/6551
- H01M10/6555
- H01M50/434
- CPC H01M10/0562
- H01M10/0525
- H01M10/615
- H01M4/66
- H05B3/14
- H05B3/18
- CPC H01M10/615
- H01Q5/321
- H01Q5/335
- H01Q5/50
- H01Q9/42
- CPC H01Q1/243
- H01Q5/328
- H01Q5/385
- H01Q21/28
- H04B1/40
- H04M1/02
- H01Q13/10
- H04B17/318
- CPC H01Q13/103
- CPC H02H9/045
- H02J7/00
- CPC H02J7/007182
- H02J7/06
- H02M3/07
- CPC H02J7/06
- H02J50/60
- H02J50/12
- H02J50/80
- CPC H02J50/60
- H02J50/10
- H02J50/40
- CPC H02J50/80
- H02K1/14
- H02K7/14
- CPC H02K1/14
- H03K19/00
- H03K19/017
- H03K19/17784
- CPC H03K19/0005
- H04B1/00
- CPC H04B1/0064
- H04B1/10
- H04B1/04
- CPC H04B1/1027
- H04B1/16
- H03F3/19
- H03K3/037
- CPC H04B1/16
- H04B7/024
- H04B7/0456
- H04B7/06
- CPC H04B7/024
- H04B17/10
- H04B17/309
- CPC H04B17/102
- H04L5/00
- H04B1/713
- H04L1/00
- H04W72/1273
- CPC H04L5/0048
- CPC H04L5/0057
- H04L27/20
- CPC H04L27/20
- H04L41/12
- H04L41/14
- H04L41/16
- H04L41/5009
- CPC H04L41/12
- H04L43/0864
- H04L25/02
- H04L27/26
- H04L43/0829
- CPC H04L43/0864
- H04L47/62
- H04L47/32
- CPC H04L47/6205
- CPC H04M1/0235
- H04M1/72484
- H04M1/72454
- H04M1/72469
- CPC H04M1/72484
- H04N7/14
- H04L51/224
- H04L65/65
- CPC H04N7/147
- H04N13/128
- G06T19/00
- CPC H04N13/128
- H04N13/344
- H04N13/239
- CPC H04N13/344
- H04N19/174
- H04N19/105
- H04N19/119
- H04N19/172
- H04N19/70
- CPC H04N19/174
- H04N19/176
- H04N19/50
- CPC H04N19/176
- H04N19/59
- CPC H04N19/59
- H04N19/593
- H04N19/11
- H04N19/132
- H04N19/136
- H04N19/82
- CPC H04N19/593
- H04N23/68
- H01F7/08
- H01F7/121
- H04N23/51
- H04N23/54
- CPC H04N23/687
- H04N25/46
- H04N9/78
- H04N23/69
- H04N23/85
- H04N25/10
- CPC H04N25/46
- H04N25/11
- H04N25/704
- H04N25/78
- H04W4/24
- H04W8/20
- H04W48/18
- CPC H04W4/24
- H04W12/069
- H04W12/0431
- H04W12/082
- CPC H04W12/069
- H04W16/22
- H04W24/02
- CPC H04W16/22
- H04W24/10
- CPC H04W24/10
- H04W28/02
- H04W4/40
- H04W72/23
- H04W72/56
- H04W76/27
- H04W88/06
- CPC H04W28/0252
- H04W36/00
- H04W36/30
- CPC H04W36/0061
- H04W8/22
- H04W36/32
- CPC H04W36/0069
- H04W36/14
- CPC H04W36/142
- H04W40/22
- H04W40/12
- H04W76/19
- H04W88/08
- CPC H04W40/22
- H04W60/04
- H04W60/06
- CPC H04W48/18
- H04W48/20
- H04W84/04
- H04W84/06
- CPC H04W60/04
- H04W68/02
- H04W8/24
- H04W68/04
- H04W76/11
- CPC H04W68/025
- H04W72/0446
- H04W72/232
- CPC H04W72/0446
- H04W72/0453
- H04W52/14
- H04W72/12
- CPC H04W72/0453
- CPC H04W72/12
- H04W16/28
- CPC H04W72/232
- H04W72/25
- H04W72/40
- CPC H04W72/25
- H04W72/50
- H04W72/30
- CPC H04W72/50
- H04W72/51
- H04W72/21
- H04W76/30
- CPC H04W72/51
- H04W72/541
- CPC H04W72/541
- H04W74/08
- CPC H04W74/0808
- H04W76/10
- H04B7/15
- H04L1/06
- H04W72/044
- H04W72/20
- CPC H04W76/10
- H04W76/20
- H04W88/12
- H04W92/12
- H04W76/14
- H04W92/18
- CPC H04W76/14
- H04W72/1268
- H04W72/566
- CPC H04W76/20
- CPC H04W76/27
- H05K1/02
- CPC H05K1/0218
- H05K5/02
- CPC H05K5/0217
- H01L27/105
- CPC H10B10/12
- H10B12/00
- CPC H10B12/00
- CPC H10B12/315
- CPC H10B12/34
- CPC H10B12/485
- CPC H10B41/27
- CPC H10B43/27
- H10B41/41
- H01L23/535
- CPC H10B43/35
- CPC H10B43/40
- H10B51/20
- H10B51/30
- CPC H10B51/20
- CPC H10B80/00
- H10K30/10
- H10K39/00
- H10K39/32
- H10K39/38
- H10K85/50
- H10K85/60
- CPC H10K30/10
- H10K50/115
- H10K50/16
- H10K71/12
- CPC H10K50/115
- H10K50/15
- H10K85/10
- C08G61/12
- C08J5/18
- H10K10/20
- H10K10/46
- H10K30/50
- CPC H10K85/113
- H10K85/30
- C07F15/00
- C09K11/06
- H10K85/40
- CPC H10K85/342
- H10K50/17
- H10K71/00
- H10K102/00
- CPC H10K85/633
