SAMSUNG ELECTRONICS CO., LTD. patent applications on August 29th, 2024
Patent Applications by SAMSUNG ELECTRONICS CO., LTD. on August 29th, 2024
SAMSUNG ELECTRONICS CO., LTD.: 144 patent applications
SAMSUNG ELECTRONICS CO., LTD. has applied for patents in the areas of H10B12/00 (12), H01L23/00 (11), H01L29/06 (9), H01L29/423 (8), H01L29/786 (7) H10B12/482 (3), H04N19/45 (3), H01L23/481 (3), H04W74/0833 (2), G04G21/025 (2)
With keywords such as: device, based, including, layer, configured, portion, data, surface, memory, and semiconductor in patent application abstracts.
Patent Applications by SAMSUNG ELECTRONICS CO., LTD.
Inventor(s): Taehan JEON of Suwon-si (KR) for samsung electronics co., ltd., Jinhong MIN of Suwon-si (KR) for samsung electronics co., ltd., Youngjae OH of Suwon-si (KR) for samsung electronics co., ltd., Hyoungseon CHOI of Suwon-si (KR) for samsung electronics co., ltd., Joonho KIM of Suwon-si (KR) for samsung electronics co., ltd., Taeseon KIM of Suwon-si (KR) for samsung electronics co., ltd., Seoyoung YOON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): A61B5/0537
CPC Code(s): A61B5/0537
Abstract: disclosed is an electronic device. the electronic device includes a first electrode body configured to be in contact with a body of a user and comprising a first current electrode and a second current electrode symmetrically arranged in a first direction and a first voltage electrode and a second voltage electrode symmetrically arranged in the first direction, a second electrode body configured to be in contact with the body of a user and, and at least one processor configured to: obtain a first bioelectrical impedance through the first electrode body comprising a first current electrode and a second current electrode symmetrically arranged in a first direction and a first voltage electrode and a second voltage electrode symmetrically arranged in the first direction, obtain a second bioelectrical impedance through the second electrode body comprising a third current electrode and a fourth current electrode symmetrically arranged in a second direction and a third voltage electrode and a fourth voltage electrode symmetrically arranged in the second direction, identify one of the first bioelectrical impedance and the second bioelectrical impedance based on phases of each of the first bioelectrical impedance and the second bioelectrical impedance, obtain a total body water amount of the user using the identified bioelectrical impedance, and provide the obtained total body water amount.
Inventor(s): Bokman LIM of Hwaseong-si (KR) for samsung electronics co., ltd., Kyung-Rock KIM of Seoul (KR) for samsung electronics co., ltd., Youngbo SHIM of Seoul (KR) for samsung electronics co., ltd., Jun-Won JANG of Seoul (KR) for samsung electronics co., ltd., Seungyong HYUNG of Yongin-si (KR) for samsung electronics co., ltd.
IPC Code(s): A61F2/70, A61B5/11, A61H3/00, A63B21/00, A63B23/04, A63B24/00
CPC Code(s): A61F2/70
Abstract: a gait assistance apparatus including at least one sensor configured to sense a step motion of a user, and an operator configured to determine assistance forces of a right step and a left step of the user based on step motion information of the user and adjust the assistance force for at least one of the right step or the left step of the user based on a result of proportionally adding together the assistance forces of the right step and the left step based on a variable ratio may be provided.
20240286146. ELECTRONIC DUST COLLECTING DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Myungseob SONG of Suwon-si (KR) for samsung electronics co., ltd., Myungsoo KANG of Suwon-si (KR) for samsung electronics co., ltd., Hyongsoo NOH of Suwon-si (KR) for samsung electronics co., ltd., Kyuho SHIN of Suwon-si (KR) for samsung electronics co., ltd., Joonoh SHIN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): B03C3/08, B03C3/38, B03C3/47, B03C3/82, F24F8/192
CPC Code(s): B03C3/08
Abstract: disclosed herein is an electric dust collecting device including: a semi-conductive structure including at least one of a semi-conductive filter mesh or a semi-conductive grille, a plurality of low-voltage electrodes disposed on a downstream side of an air flow path than the semi-conductive structure, including a first dielectric layer and a first conductive electrode layer in the first dielectric layer, and configured to receive an applied low voltage, and a plurality of high-voltage electrodes arranged alternately with the plurality of low-voltage electrodes, including a second dielectric layer and a second conductive electrode layer in the second dielectric layer, and configured to receive an applied high-voltage, wherein the second conductive electrode layer includes a first discharge portion exposed to the outside of the second dielectric layer in an air flow direction and a second discharge portion adjacent to the first discharge portion, and a distance p between the first discharge portion and the second discharge portion is greater than a distance d between the first discharge portion or second discharge portion and the semi-conductive structure.
Inventor(s): Jungseok HONG of Minneapolis MN (US) for samsung electronics co., ltd., Suveer GARG of New York NY (US) for samsung electronics co., ltd., Jinwook HUH of Millburn NJ (US) for samsung electronics co., ltd., Hyun Soo PARK of Saint Paul MN (US) for samsung electronics co., ltd., Ibrahim Volkan ISLER of Saint Paul MN (US) for samsung electronics co., ltd.
IPC Code(s): B25J9/16, G06T7/70, G06V10/44, G06V10/74
CPC Code(s): B25J9/1664
Abstract: an electronic device for manipulating a target object, including: a camera; a memory; and at least one processor configured to: obtain a first image of the target object, wherein the first image is captured by the camera, provide the first image and a target image to an artificial intelligence (ai) model to obtain relative pose information, based on the obtained relative pose information, generate a similarity value, and generate a control command based on the similarity value, wherein based on the similarity value being greater than a threshold value, the control command includes a movement command for moving a manipulator associated with the electronic device from a first position to a second position, and wherein based on the similarity value being less than or equal to the threshold value, the control command includes a manipulation command for manipulating the target object using the manipulator.
Inventor(s): Minseock Chang of Suwon-si (KR) for samsung electronics co., ltd., Ilwhan Oh of Seoul (KR) for samsung electronics co., ltd., Kibong Roh of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): B65B51/10, B65B5/02, B65B5/04, B65B61/06, B65B67/12
CPC Code(s): B65B51/10
Abstract: a container packaging apparatus according to an embodiment includes a moving table supporting a container, a bag supply unit configured to supply a vinyl bag to cover the container on the moving table, wherein the vinyl bag has a sealed upper part and an opened lower part, a load port including a pair of support blocks that support the bottom surface of the container transferred from the moving table and are spaced apart with a gap through which the vinyl bag passes, and a thermosetting unit configured to form a sealing line on the lower part of the vinyl bag to seal the vinyl bag, the thermosetting unit including a heating block having a heating coil and an elastic pad in contact with the heating block while the vinyl bag is heated by the heating block.
Inventor(s): Jae Hong Park of Suwon-si (KR) for samsung electronics co., ltd., Tae-Geon Kim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): B65D1/36, B65D85/38
CPC Code(s): B65D1/36
Abstract: a tray for transporting a semiconductor device includes a plate, a loading portion on the plate and configured to support the semiconductor device, and a sidewall portion on the plate and surrounding at least a portion of the loading portion, wherein the sidewall portion includes a first sidewall, and the first sidewall includes a first inclined portion extending from the loading portion and defining a first angle with respect to an upper surface of the loading portion, and a first guide portion extending from the first inclined portion and defining a second angle with respect to the upper surface of the loading portion, the second angle being smaller than the first angle, and the first angle and the second angle are acute angles.
Inventor(s): Se Jun PARK of Suwon-si (KR) for samsung electronics co., ltd., Do Hyung KIM of Suwon-si (KR) for samsung electronics co., ltd., Se-Ung MIN of Suwon-si (KR) for samsung electronics co., ltd., Ju Hwan PARK of Suwon-si (KR) for samsung electronics co., ltd., Myung Seok SONG of Suwon-si (KR) for samsung electronics co., ltd., Moon Seok JANG of Suwon-si (KR) for samsung electronics co., ltd., Young Soo JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): C23C14/06, C23C14/34, C23C14/50, C23C16/27, C23C16/44, H01L21/02, H01L21/67, H01L21/683
CPC Code(s): C23C14/0611
Abstract: a dlc film deposition apparatus comprises a chamber in which processes are performed, a substrate in the chamber, the substrate having a first surface facing the top of the chamber, and a second surface opposite to the first surface, a holder in the chamber, the holder configured to support the substrate while being in contact with part of the second surface of the substrate, and a dlc film generator below the substrate, in the chamber, the dlc film generator configured to deposit a dlc film on the second surface of the substrate, wherein the dlc film is formed on the part of the second surface of the substrate that is not in contact with the holder.
Inventor(s): Sungwon KIM of Suwon-si (KR) for samsung electronics co., ltd., Jeeyeon KIM of Suwon-si (KR) for samsung electronics co., ltd., Heejin PARK of Suwon-si (KR) for samsung electronics co., ltd., Joonho KIM of Suwon-si (KR) for samsung electronics co., ltd., Changbae LIM of Suwon-si (KR) for samsung electronics co., ltd., Yongwon JEONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): F24F8/80, F24F3/14, F24F8/108, F24F8/167, F24F8/192, F24F8/22, F24F13/28
CPC Code(s): F24F8/80
Abstract: a purification device is provided. the purification device includes an air filter and/or a light source module. the air filter has a multi-folded form. the air filter includes a first filter layer having electrostatic adsorption capability and/or a second filter layer stacked on one surface of the first filter layer. the second filter layer includes at least one first region including an ultraviolet photocatalytic material and at least one second region including a visible photocatalytic material. the light source module includes at least one ultraviolet light source facing a portion of the first region of the second filter layer and at least one visible light source facing a portion of the second region of the second filter layer.
20240288232. HEAT EXCHANGER_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Wonjoo LEE of Suwon-si (KR) for samsung electronics co., ltd., Kangtae SEO of Suwon-si (KR) for samsung electronics co., ltd., Jaehyo JEONG of Suwon-si (KR) for samsung electronics co., ltd., Yonghwa CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): F28F9/02, F28D7/16
CPC Code(s): F28F9/0246
Abstract: disclosed herein is a heat exchanger including a plurality of tubes configured to enable refrigerant to flow therein, the plurality of tubes arranged along one direction and divided into a first row and a second row, a header coupled to ends of the plurality of tubes and including a first chamber to supply refrigerant to the first row of tubes and a second chamber to be supplied with refrigerant from the second row of tubes, wherein the first chamber includes a first region defined in the one direction between two tubes disposed at opposite ends of the first row of tubes, and the second chamber includes a second region defined in the one direction between two tubes disposed at opposite ends of the second row of tubes, an inlet pipe communicating with the first chamber within the first region to supply refrigerant to the first chamber, and an outlet pipe communicating with the second chamber within the second region to discharge refrigerant of the second chamber.
20240288265. SEMICONDUCTOR MEASUREMENT APPARATUS_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jinyong Kim of Suwon-si (KR) for samsung electronics co., ltd., Yasuhiro Hidaka of Yokohama-shi (JP) for samsung electronics co., ltd., Wookrae Kim of Suwon-si (KR) for samsung electronics co., ltd., Ingi Kim of Suwon-si (KR) for samsung electronics co., ltd., Jinseob Kim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G01B11/02
CPC Code(s): G01B11/02
Abstract: provided is a semiconductor measurement apparatus that includes: a lighting unit comprising a light source, and a light modulator configured to decompose a light output by the light source into a plurality of wavelength bands and generate an output light of at least two selected wavelength bands; a first optical unit comprising an illumination polarizing element disposed in a path of the output light; a second optical unit comprising a beam splitter, an objective lens configured to allow light having passed through the first optical unit to be incident onto a sample, and a self-interference generator disposed on a path of a reflected light; a sensor configured to output an original image representing an interference pattern of light having passed through the self-interference generator; and a controller configured to process the original image and determine a selected critical dimension of a structure included in the sample.
Inventor(s): Jeonggeun YUN of Suwon-si (KR) for samsung electronics co., ltd., Byoungho LEE of Seoul (KR) for samsung electronics co., ltd., Chulsoo CHOI of Seoul (KR) for samsung electronics co., ltd., Kyookeun LEE of Suwon-si (KR) for samsung electronics co., ltd., Taewon CHOI of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): G02B1/00, G02B27/01
CPC Code(s): G02B1/002
Abstract: an atypical metasurface, includes: a 2-dimensional plane; and a plurality of atypical unit structures periodically arranged on the 2-dimensional plane, wherein each of the plurality of atypical unit structures has an atypical pattern that is not periodic.
Inventor(s): Hongkyu PARK of Yongin-si (KR) for samsung electronics co., ltd., Seokho Yun of Seoul (KR) for samsung electronics co., ltd., Minwoo Lim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G02B3/00, G02B1/115, H04N23/60, H04N25/11
CPC Code(s): G02B3/0006
Abstract: provided is an image sensor including a color separating lens array. the image sensor includes: a sensor substrate including a first pixel configured to sense light of a first wavelength and a second pixel configured to sense light of a second wavelength; a transparent spacer layer on the sensor substrate; and a color separating lens array on the spacer layer, wherein the color separating lens array condenses the light of the first wavelength toward the first pixel, and includes a first lens layer on the spacer layer, a second lens layer on the first lens layer, and an etch prevention layer between the first lens layer and the second lens layer.
Inventor(s): Bupmyoung KIM of Suwon-si (KR) for samsung electronics co., ltd., Sungho Kim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G02F1/1345, H01L27/12
CPC Code(s): G02F1/13452
Abstract: a display apparatus includes a substrate including an active area including a plurality of pixels, and an outer lead bonding (olb) area; a first chip on film (cof) coupled to the olb area; a second cof coupled to the olb area and adjacent to the first cof; a first printed circuit board (pcb) coupled to the first cof; and a second pcb coupled to the second cof, wherein the olb area may include a first area to which the first cof is coupled, a second area to which the second cof is coupled, and a dummy area between the first area and the second area, and the dummy area may include a conductive pattern electrically connecting the first cof and the second cof.
Inventor(s): Ji cheol PARK of Suwon-si (KR) for samsung electronics co., ltd., Seonghyeon AHN of Suwon-si (KR) for samsung electronics co., ltd., Honggu IM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F7/039, G03F7/004, G03F7/038, H01L21/027
CPC Code(s): G03F7/039
Abstract: a semiconductor photoresist composition and a method of forming patterns, the composition includes an acid reactive polymer; a resin additive including a block copolymer; a photo acid generator; a photo-decomposable quencher; and a solvent, wherein the block copolymer includes an a-block and a b-block, a water contact angle of a polymer film consisting of the a-block is greater than about 50� and less than or equal to about 100�, and a water contact angle of a polymer film consisting of the b-block is greater than about 0� and less than or equal to about 50�.
Inventor(s): Jungah KIM of Suwon-si (KR) for samsung electronics co., ltd., Jimin CHUN of Iksan-si (KR) for samsung electronics co., ltd., Hyojoong YOON of Iksan-si (KR) for samsung electronics co., ltd., Yonghwan CHO of Iksan-si (KR) for samsung electronics co., ltd., Junyoul CHOI of Suwon-si (KR) for samsung electronics co., ltd., Sangwon BAE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G03F7/00, C11D7/08, C11D7/10, C11D7/26, G03F1/22
CPC Code(s): G03F7/70925
Abstract: described is a cleaning composition including an inorganic acid or salt thereof and an organic acid, wherein the organic acid has a first acid dissociation constant (pka) and a second acid dissociation constant (pka). pkais less than pka, and pkais from about 1 to about 3, and pkais from about 4 to about 7.
Inventor(s): Taegyun KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Junghyun KANG of Gyeonggi-do (KR) for samsung electronics co., ltd., Kijung KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Shinhun MOON of Gyeonggi-do (KR) for samsung electronics co., ltd., Seunghyun CHO of Gyeonggi-do (KR) for samsung electronics co., ltd., Seongho HONG of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): G04G19/00, A61B5/00, A61B5/024, G04G9/00, G04G21/02, H02J7/00, H02J50/00, H02J50/10, H05K1/02, H05K5/00
CPC Code(s): G04G19/00
Abstract: an electronic device is disclosed, including a housing having a front plate, a back plate facing the front plate, and a side frame surrounding a space defined between the front and back plates, a circuit board disposed within the housing, a module assembly disposed between the circuit board and the back plate, and electrically connected with the circuit board, wherein the module assembly includes: an optical sensor module including a flexible printed circuit board (fpcb) including a first surface and a second surface facing away from the first surface, a light emitting part disposed on the first surface of the fpcb, and a light receiving part disposed on the first surface spaced apart from the light emitting part, and a wireless charging module surrounding the fpcb of the optical sensor module, and at least partially coupled to the fpcb so as to be integrated with the fpcb.
Inventor(s): Injo JEONG of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Sanghyun BAEK of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Hyunguk YOO of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Jeahyuck LEE of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Younghyun KIM of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Minho PARK of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd., Seongwook JO of Suwon-si, Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): G04G21/02, G04G17/08, G06F1/16
CPC Code(s): G04G21/025
Abstract: a wearable electronic device is provided. the wearable electronic device includes a housing, a display disposed on a first surface of the housing, a rear plate disposed on a second surface of the housing opposite the first surface, and a sensor module disposed in the housing. the rear plate includes a first rear plate including insert areas, a second rear plate configured to surround at least a part of the first rear plate, and cover members disposed to close the insert areas. the sensor module includes at least one optical sensor and at least one temperature sensor disposed in spaces surrounded by the insert areas and the cover members. a first coating area including at least one of a thermal conductive coating layer or a light-blocking coating layer is formed on at least a part of at least one of side surfaces of the insert areas.
Inventor(s): Minhyun CHO of Suwon-si (KR) for samsung electronics co., ltd., Junyoung Kim of Suwon-si (KR) for samsung electronics co., ltd., Minyoung Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G04G21/02
CPC Code(s): G04G21/025
Abstract: an electronic device including: a housing configured to be worn on a user's body and including a rear surface and a front surface, with the rear surface configured to contact the user's body; at least one sensor module provided in the housing and configured to receive light incident into the housing through the rear surface; and an electrophoretic element provided at least partially between the rear surface and the at least one sensor module, where the electrophoretic element is configured to receive an electrical signal and transmit or block at least a portion of the light incident into the housing.
Inventor(s): Minwoo RYU of Suwon-si (KR) for samsung electronics co., ltd., Seokhyun KANG of Suwon-si (KR) for samsung electronics co., ltd., Jinhee KIM of Suwon-si (KR) for samsung electronics co., ltd., Sangsik YOON of Suwon-si (KR) for samsung electronics co., ltd., Donghun LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G05D1/622, B25J5/00, B25J11/00, G05D1/243
CPC Code(s): G05D1/622
Abstract: a robot includes: a main body, one or more optical sensors provided at a lower portion of the main body, memory storing at least one program, and at least one processor, comprising processing circuitry, electrically connected with the optical sensors and the memory and configured to execute at least one instruction of the program. each optical sensor includes: one or more light emitting elements for emitting light of a first wavelength band, one or more light receiving elements for receiving light of a second wavelength band induced by the light of the first wavelength band, and one or more optical filter layers arranged on the one or more light receiving elements to pass the light of the second wavelength band. the at least on processor is configured to obtain first detection information based on two or more sensing values obtained through the one or more light receiving elements, and, control to avoid a position associated with the first detection information when the first detection information is obtained.
Inventor(s): Chungha KIM of Suwon-si (KR) for samsung electronics co., ltd., Sungkwon KIM of Suwon-si (KR) for samsung electronics co., ltd., Sangmin HYUN of Suwon-si (KR) for samsung electronics co., ltd., Geunyong PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F1/16, G09F9/30, H04M1/02
CPC Code(s): G06F1/1675
Abstract: the disclosure discloses an electronic device including a flexible display having an expandable display area. the disclosed electronic device may include: a housing including a first cover disposed to face a first direction, a second cover disposed to face a second direction opposite to the first direction, and a side member enclosing at least part of a space between the first and second covers; a slider to be inserted or withdrawn by being disposed to at least part of an area of the first cover of the housing; a flexible display disposed in the slider such that at least part thereof is exposed, and disposed to allow a display area to be expanded according to the withdrawing of the slider and allow the expanded display area to be hidden inside the housing; and a support body mounted closely in contact on a bottom face of the flexible display, supporting the expanded display area as a prop when the slider is withdrawn, and disposed to be housed inside the housing together with the expanded display area when the slider is inserted.
Inventor(s): Sompong Paul OLARIG of Pleasanton CA (US) for samsung electronics co., ltd., Matthew BRYSON of Los Gatos CA (US) for samsung electronics co., ltd., Stephen FISCHER of San Jose CA (US) for samsung electronics co., ltd.
IPC Code(s): G06F1/26, G06F1/3215, G06F1/3228, G06F1/3296
CPC Code(s): G06F1/266
Abstract: a method may include coupling a device to a host through a connector, receiving, by a host controller, a request for boost power from the device, determining, by the host controller, an amount of surplus power available from one or more power sources arranged to provide power to the device through the connector, and allocating at least a portion of the surplus power to the device as boost power. the method may further include negotiating an amount of the boost power based on the amount of surplus power available from the one or more power sources. the method may further include monitoring a power consumption of the device, and reducing a total power allocation to the device based on the power consumption of the device.
Inventor(s): Seonghoon KANG of Suwon-si (KR) for samsung electronics co., ltd., Joayoung LEE of Suwon-si (KR) for samsung electronics co., ltd., Jinseon YOO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/01, G06T7/60, G06T7/70, G06V40/20
CPC Code(s): G06F3/011
Abstract: an electronic device includes: a communication circuit; a camera; a display; and a processor configured to: display, while providing virtual service, a first virtual object through the display; identify a distance between the first virtual object and a second virtual object corresponding to a user of the electronic device; based on identifying that the distance is equal to or less than a reference distance, activate the camera; identify a state of the user based on at least one image obtained by using the activated camera; and transmit, to an external electronic device through the communication circuit, data for changing a state of the second virtual object displayed through a display of the external electronic device, based on the identified state of the user.
Inventor(s): Hye-Ran KIM of Suwon-si (KR) for samsung electronics co., ltd., Taeyoung OH of Suwon-s (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06, G06F11/10
CPC Code(s): G06F3/0611
Abstract: a memory device includes: a plurality of command and address (ca) samplers configured to receive, as a plurality of first ca signals, a command comprising a predetermined pattern via a ca bus based on an exit of a sleep mode, wherein each of the plurality of ca samplers further is configured to sample a corresponding first ca signal among the plurality of first ca signals; and a command decoder configured to check a parity error in the plurality of first ca signals sampled by the plurality of ca samplers.
Inventor(s): EOK SOO SHIM of Suwon-si (KR) for samsung electronics co., ltd., DONGJIN LIM of Suwon-si (KR) for samsung electronics co., ltd., JAEGYU CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
CPC Code(s): G06F3/0614
Abstract: embodiments provide a power loss protection (plp) module that is connected to a first storage device to perform a plp operation for the first storage device, including: a volatile memory that stores data according to commands of a host; a non-volatile memory that receives and stores data of the volatile memory when the first storage device becomes inaccessible; a capacitor module that supplies a voltage to the volatile memory and the non-volatile memory when the first storage device becomes inaccessible; and a controller that controls operations of the volatile memory, the non-volatile memory, and the capacitor module.
20240289037. DUAL MODE STORAGE DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jongmin GIM of Milpitas CA (US) for samsung electronics co., ltd., Yang Seok KI of Palo Alto CA (US) for samsung electronics co., ltd.
IPC Code(s): G06F3/06, G06F13/16
CPC Code(s): G06F3/0634
Abstract: a system is disclosed. the system may include a processor and a memory coupled to the processor. a storage device may also be coupled to the processor. the storage device may include a first interface and a second interface. the storage device may be configured to extend the memory. a mode switch may select a selected interface of the first interface and the second interface for a command issued by the processor.
Inventor(s): Sangoak WOO of Suwon-si (KR) for samsung electronics co., ltd., Jaeho SHIN of Suwon-si (KR) for samsung electronics co., ltd., Hyun Jae OH of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
CPC Code(s): G06F3/065
Abstract: an electronic device includes an input handling circuit, a control circuit, and a data transfer circuit. the input handling circuits receives a first request including an address from a first memory device, aligns the address with an access unit of a second memory device, requests a determination for the aligned address, and transmits a second request to the second memory device based on a determination result. the control circuit determines, based on the request, whether a duplicate address with the aligned address is present to generate the determination result and updates a bitmask based on the determination result. the data transfer circuit receives the second request from the second memory device and transfers data based on the bitmask. the bitmask includes one or more bits, each corresponding to the first request and indicating a location corresponding to the first request within an access unit of the second memory device.
Inventor(s): Ki-Heung KIM of Suwon-si (KR) for samsung electronics co., ltd., Taeyoung Oh of Suwon-si (KR) for samsung electronics co., ltd., Taekwoon Kim of Suwon-si (KR) for samsung electronics co., ltd., Jinseong Yun of Suwon-si (KR) for samsung electronics co., ltd., Yoonjae Jeong of Suwon-si (KR) for samsung electronics co., ltd., Hyongryol Hwang of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
CPC Code(s): G06F3/0659
Abstract: a method of operating a memory module that communicates with a memory controller includes: entering a one-time programmable (otp) addressing mode based on an otp command received from the memory controller; determining whether a guard key sequence is satisfied based on a plurality of mode register commands received from the memory controller; and programming, based on a determination that the guard key sequence is satisfied, a unique identifier (id), corresponding to a target memory device, into the target memory device, among a plurality of memory devices included in the memory module.
Inventor(s): Jihwan YOON of Suwon-si (KR) for samsung electronics co., ltd., Sanghee LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F3/06
CPC Code(s): G06F3/0689
Abstract: provided is a redundant array of inexpensive disks (raid) controller including a plurality of channel interfaces configured to receive a data strip for which it is distinguished in which data stripe the data strip is included by using a raid identifier from each of a plurality of channels, split the data strip into a plurality of pieces of split data and store the split data, and assign a split identifier to each of the plurality of pieces of split data, a distributor configured to set, based on the split identifier, a transmission path of the plurality of pieces of split data, and a plurality of raid buffer units configured to receive the split data through the distributor and manage parity data corresponding to the split data.
Inventor(s): Melky Arputharaja SILUVAINATHAN of San Jose CA (US) for samsung electronics co., ltd.
IPC Code(s): G06F11/14, G06F3/06, G06F21/57
CPC Code(s): G06F11/1471
Abstract: a method of operating a storage device may include establishing a connection between a host and the storage device, detecting a crash of the storage device, suspending, based on detecting the crash, processing commands from the host through the connection, recovering from the crash of the storage device, and resuming, based on recovering from the crash, processing commands from the host through the connection. the method may further include notifying the host of the crash based on detecting the crash of the storage device. notifying the host may include sending an asynchronous event notification to the host through the connection. notifying the host may include asserting a controller status indicator. the method may further include receiving a reset from the host, and resetting a storage interface based on receiving the reset from the host. the method may further include maintaining the connection through a communication interface.
Inventor(s): Dohyeon KIM of Suwon-si (KR) for samsung electronics co., ltd., Hong Rak SON of Suwon-si (KR) for samsung electronics co., ltd., Jae Hun JANG of Suwon-si (KR) for samsung electronics co., ltd., Mankeun SEO of Suwon-si (KR) for samsung electronics co., ltd., Yong Ho SONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F12/02
CPC Code(s): G06F12/023
Abstract: the present disclosure provides method and apparatuses for managing memory of storage system. in some embodiments, a controller of a storage system includes a memory storing a program, and a processor configured to execute the program to determine whether a type of data stored in the memory is at least one of a first data type and a second data type, store, in the memory, a header of the data stored in the memory, based on a first determination that the data stored in the memory is of the first data type, compress the data stored in the memory, based on a second determination that data stored in the memory is of the second data type, and power off the memory based on at least one of the header of the data and the compressed data having been stored in the memory.
Inventor(s): Heonsoo LEE of Suwon-si (KR) for samsung electronics co., ltd., Byungchul Hong of Suwon-si (KR) for samsung electronics co., ltd., Junseok Park of Suwon-si (KR) for samsung electronics co., ltd., Jaehun Chung of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F12/0862, G06F9/38, G06F12/02, G06F12/06
CPC Code(s): G06F12/0862
Abstract: in some embodiments, a multi-port queueing cache includes a plurality of first ports, a plurality of second ports, a plurality of request handlers respectively coupled to the plurality of first ports, a cache storage unit coupled to the plurality of second ports, a reserve interface configured to exchange at least one address and at least one reserved cache line number, and a request interface configured to exchange the at least one reserved cache line number and at least one data. the reserve interface and the request interface are disposed between the plurality of request handlers and the cache storage unit. the cache storage unit includes a plurality of cache lines configured to store the plurality of data. the cache storage unit is configured to output a portion of the plurality of addresses, and receive a portion of the plurality of data corresponding to the portion of the plurality of addresses.
Inventor(s): Hanju Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F13/16, G06F11/10, G06F13/42
CPC Code(s): G06F13/1668
Abstract: a storage controller includes a host block circuit formed at a first die and configured to communicate with a host device; and a plurality of media block circuits formed at at least one second die and configured to control a plurality of media devices. the plurality of media devices are configured to constitute a plurality of channels. each of the plurality of media block circuits is connected to a corresponding channel of the plurality of channels. the host block circuit and the plurality of media block circuits are connected with each other through a chiplet interface.
Inventor(s): Insup Kim of Suwon-si (KR) for samsung electronics co., ltd., Ganggyu Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06F21/56, G06N3/04
CPC Code(s): G06F21/566
Abstract: a deep neural network system, comprising, a neural network operation unit configured to perform a convolution operation on input features to generate a classification result, a memory unit configured to store a trained neural network model in a first storage and configured to perform a first parameter to the neural network operation unit based on the trained neural network model, an attack detection circuit configured to generate a trigger signal periodically or when a hostile attack on the memory unit is detected, and a protection logic unit configured to detect whether or not the first parameter provided to the neural network driver in the memory unit has been tampered with in response to the trigger signal, and provide a second parameter to the neural network operation unit using the trained neural network model backed up in a second storage according to the detection result.
Inventor(s): Jisi ZHANG of Staines (GB) for samsung electronics co., ltd., Md Asif JALAL of Staines (GB) for samsung electronics co., ltd., Karthikeyan SARAVANAN of Staines (GB) for samsung electronics co., ltd., Pablo PESO PARADA of Staines (GB) for samsung electronics co., ltd., Mete OZAY of Staines (GB) for samsung electronics co., ltd.
IPC Code(s): G06F21/62, G10L15/02, G10L15/06, G10L15/16, G10L15/22, G10L15/30, G10L21/007, G10L21/0208
CPC Code(s): G06F21/6254
Abstract: broadly speaking, the present disclosure relates to a computer-implemented method for training a machine learning, ml, automatic speech recognition, asr, model. the method comprises injecting a speaker anonymiser, which is configured to cause the ml asr model to generate anonymised acoustic embeddings for the ml asr model, at one or more layers of the ml asr model, and suitably training the ml asr model including the speaker anonymiser on audio data comprising an utterance with one or more words to be recognised. correspondingly, there is also described a computer implemented method for performing automatic speech recognition using the trained ml asr model and system for training/inference thereof.
Inventor(s): Jungbae KIM of Suwon-si (KR) for samsung electronics co., ltd., Mooyoung KIM of Suwon-si (KR) for samsung electronics co., ltd., Seungjin KIM of Suwon-si (KR) for samsung electronics co., ltd., Euntaik LEE of Suwon-si (KR) for samsung electronics co., ltd., Jungeun LEE of Suwon-si (KR) for samsung electronics co., ltd., Hyeonsu LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06N5/04
CPC Code(s): G06N5/04
Abstract: an electronic device is provided. the electronic device includes memory storing artificial intelligence models and one or more programs including instructions, and one or more processor, wherein the one or more programs including instructions, when executed by the one or more processors, cause the electronic device to load the artificial intelligence models stored in memory and execute a runtime engine of a framework, identify whether an operation function is supported on a target processor, identify whether a first node for executing an inference on the artificial intelligence models operate without errors based on supporting the operation function on the target processor, repeat the identification until a last node by adding one more nodes in case that the first node operates without errors, form a first group by creating a partition from the first node to an identified n−1st node based on the identification that an error occurred on an nth node, and form a second group by creating a partition for the nth node on which the error occurred.
Inventor(s): Donghoon SAGONG of Suwon-si (KR) for samsung electronics co., ltd., Haechan LEE of Pohang-si (KR) for samsung electronics co., ltd., Sunghyun CHO of Pohang-si (KR) for samsung electronics co., ltd., Seung-Hwan BAEK of Pohang-si (KR) for samsung electronics co., ltd., Nahyup KANG of Suwon-si (KR) for samsung electronics co., ltd., Jiyeon KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T11/00, G06T7/90, G06T15/20, G06T17/10
CPC Code(s): G06T11/001
Abstract: a processor-implemented method includes: extracting pyramid level color feature maps from two or more images; extracting pyramid level density feature maps based on a cost volume generated based on the color feature maps; generating neural scene representation (nsr) cube information representing a three-dimensional (3d) space based on the color feature maps and the density feature maps; and generating a two-dimensional (2d) scene of a field of view (fov) different from a fov of the two or more images based on the nsr cube information.
Inventor(s): Yoonjung CHOI of Suwon-si (KR) for samsung electronics co., ltd., Kyuwon KIM of Suwon-si (KR) for samsung electronics co., ltd., Jongkyu KIM of Suwon-si (KR) for samsung electronics co., ltd., Yeunwook LIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06T11/60, G06T5/50, G06T7/194, G06T11/40, G06V10/26
CPC Code(s): G06T11/60
Abstract: disclosed are a method of displaying an image (for example, wallpaper) on a display and an electronic device supporting the same. the electronic device may include a display, a memory, and at least one processor comprising processing circuitry. at least one processor, individually and/or collectively, may be configured to: separate a main object from a background object in an image; determine a display size of a display to display an edited image; edit (modify) each of the main object and the background object based on the display size; combine the edited main object and the edited background object and generate the edited image based on the display size; and display the edited image through the display.
Inventor(s): Junhee HAN of Suwon-si (KR) for samsung electronics co., ltd., Hanul MOON of Suwon-si (KR) for samsung electronics co., ltd., Soohwan KIM of Suwon-si (KR) for samsung electronics co., ltd., Seungjae BAE of Suwon-si (KR) for samsung electronics co., ltd., Inho SHIN of Suwon-si (KR) for samsung electronics co., ltd., Jiyoung LIM of Suwon-si (KR) for samsung electronics co., ltd., Yongwon CHO of Suwon-si (KR) for samsung electronics co., ltd., Jiwoo LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G06V40/13, G06F1/16
CPC Code(s): G06V40/13
Abstract: according to various embodiments, an electronic device is provided and includes a housing, a support frame which is arranged in an internal space of the housing and has a first surface, a second surface facing a direction opposite to the first surface, and a through hole, a display supported by the first surface and arranged to be seen from outside through at least a part of the housing, and an optical sensor module arranged in the second surface to face the through hole.
Inventor(s): Yein KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G09G3/00, G06F1/16, G06F40/174
CPC Code(s): G09G3/035
Abstract: an electronic device may include a housing including a first housing part and a second housing part configured to movably engage with the first housing part between a retracted position and an extended position, a flexible display coupled to the first housing part and the second housing part such that a size of an area of the flexible display that is visible from a front side of the housing changes as the second housing part is moved between the retracted position and the extended position, a processor, and a memory storing instructions that, when executed by the processor, cause the electronic device to while the second housing part is in the extended position, display, on a first area of the flexible display visible from the front side, a first message bubble and a second message bubble, while the first message bubble and the second message bubble are displayed on the flexible display, identify that the second housing part is moved from the extended position to the retracted position, and based on the second housing part being moved from the extended position to the retracted position, display, on a second area of the flexible display visible from the front side, a combined message bubble by including a content of the first message bubble and a content of the second message bubble, wherein a size of the second area of the flexible display is smaller than a size of the first area of the flexible display.
Inventor(s): SUGYEUNG KANG of Suwon-si (KR) for samsung electronics co., ltd., SUNGMOK LEE of Suwon-si (KR) for samsung electronics co., ltd., CHANGYEON CHO of Suwon-si (KR) for samsung electronics co., ltd., KANG JOO KIM of Suwon-si (KR) for samsung electronics co., ltd., SUNKWON KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G09G3/34
CPC Code(s): G09G3/3426
Abstract: a backlight module includes a pixel driver integrated circuit (pdic) configured to generate a switch control signal and a pulse control signal, the pulse control signal including timing information and dimming data, a pixel integrated circuit (pic) configured to generate a pulse modulation signal based on the pulse control signal, a switch group configured to transfer a driving voltage based on the switch control signal, and a backlight unit (blu) including a first end connected to the switch group and a second end connected to the pic, the blu configured to emit light on a panel based on the driving voltage and the pulse modulation signal, where the pdic is configured to generate the switch control signal and the pulse control signal such that a light emitting diode emits light at a time point at which a pixel of the panel operates.
Inventor(s): Jaechul YANG of Suwon-si (KR) for samsung electronics co., ltd., Munjo Kim of Suwon-si (KR) for samsung electronics co., ltd., Yeonho Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G10L15/18, G06F16/632
CPC Code(s): G10L15/1815
Abstract: an electronic apparatus includes a microphone; a speaker; a memory storing at least one instruction; and one or more processors operatively coupled to the memory and the speaker, wherein the one or more processors are configured to execute the at least one instruction to: based on identifying that a first voice sensed through the microphone corresponds to a wake-up voice, convert a state of the electronic apparatus from a standby state to a wake-up state, based on a second voice being sensed while the state of the electronic apparatus is the wake-up state, identify a first user query included in first voice data obtained based on the second voice, perform a first operation corresponding to the first user query, identify a predetermined query corresponding to the first user query, obtain a query list including at least one query based on the predetermined query and user context information, identify a second user query included in second voice data obtained based on a third voice sensed through the microphone, and based on a first semantic similarity between the second user query and the at least one query of the query list being greater than or equal to a predetermined value, perform a second operation corresponding to the second user query and maintain the state of the electronic apparatus as the wake-up state.
Inventor(s): Dayoung Kim of Suwon-si (KR) for samsung electronics co., ltd., Younghun Seo of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C11/4074
CPC Code(s): G11C11/4074
Abstract: a memory device according to an embodiment may include: a first cell including a first transistor and a capacitor connected to the first transistor and storing a voltage corresponding to data; a second cell including a second transistor; a voltage generation circuit for applying voltages to the source, gate, and drain of the second transistor and to the gate and back gate of the first transistor; a measuring circuit connected to the second cell, measuring at least one of a current and a voltage output from the second cell, and generating a leakage value based on at least one value of the measured current and voltage; and a monitoring circuit connected to the measuring circuit, calculating a threshold voltage of the second transistor based on the leakage value, and generating a control signal for controlling the voltage generation circuit based on the threshold voltage.
Inventor(s): YOUNGDO UM of Suwon-si (KR) for samsung electronics co., ltd., TAEYOUNG OH of Suwon-si (KR) for samsung electronics co., ltd., HYE-RAN KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C11/4076, G06F1/08, G06F1/12, G06F12/02, H03K5/13, H03K5/156
CPC Code(s): G11C11/4076
Abstract: a memory device includes a divide circuit configured to generate an internal data clock signal based on a data clock signal, wherein the data clock signal has a first voltage level for a first time period and toggles during a second time period consecutive to the first time period, a detect circuit configured to generate a feedback data corresponding to the first voltage level based on the internal data clock signal, and an input/output circuit configured to output the feedback data to an external device.
Inventor(s): Hae Young Chung of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C11/4096, G11C11/4093
CPC Code(s): G11C11/4096
Abstract: disclosed is a memory device, which comprises a memory cell array that includes a plurality of memory cells; an input/output circuit configured to transmit data received from an outside (e.g., an external source) through a data pad to the memory cell array or transmit data read from the memory cell array to the external source; and an impedance calibration circuit configured to generate an impedance calibration code that is applied to the input/output circuit. the impedance calibration circuit is further configured to divide a total impedance calibration section into a plurality of sub-impedance calibration sections, and perform at least one sub-impedance calibration in each of the plurality of sub-impedance calibration sections, the at least one sub-impedance calibration corresponding to at least one of a plurality of impedance modes.
Inventor(s): Byungsoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Jinsu KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyunggon KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C16/34, G11C16/08, G11C16/30
CPC Code(s): G11C16/3427
Abstract: a flash memory comprises a memory cell array having a plurality of memory cells; a read recovery voltage generator configured to provide a read recovery voltage to the plurality of memory cells; and a read recovery voltage controller configured to provide recovery control signals for controlling the read recovery voltage. the read recovery voltage generator includes a plurality of ground pass transistors that during a read recovery operation are configured to control a falling slope of an unselection recovery voltage provided to an unselected word line in response to the recovery control signals.
Inventor(s): Yohan LEE of Suwon-si (KR) for samsung electronics co., ltd., Jaeduk YU of Suwon-si (KR) for samsung electronics co., ltd., Sangsoo PARK of Suwon-si (KR) for samsung electronics co., ltd., Yonghyuk CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C16/34, G11C16/04, G11C16/08
CPC Code(s): G11C16/345
Abstract: a method of controlling a nonvolatile memory device, includes: determining, based on a write address, whether selected memory cells of the nonvolatile memory device corresponding to the write address are included in an over-erased group; based on the selected memory cells being included in the over-erased group, performing a preprogram operation to increase threshold voltages of an over-erased state of the selected memory cells; and after completion of the preprogram operation, performing a data program operation to store write data in the selected memory cells.
Inventor(s): YOUNGJAE PARK of SUWON-SI (KR) for samsung electronics co., ltd., SEUNGKI HONG of SUWON-SI (KR) for samsung electronics co., ltd., DONGHA KIM of SUWON-SI (KR) for samsung electronics co., ltd., HYUNBO KIM of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): G11C29/08
CPC Code(s): G11C29/08
Abstract: disclosed is a self-refresh method of a semiconductor memory device, including generating a temperature code indicative of a temperature of the semiconductor memory device; generating a first error flag indicative of any data errors in a memory area of the semiconductor memory device; performing a first self-refresh operation for the memory area within a first refresh period based on the temperature code and the first error flag; generating a second error flag indicative of any data errors in the memory area during the first self-refresh operation; and performing a second self-refresh operation for the memory area within a second refresh period based on the temperature code and the second error flag, wherein the second refresh period is longer than the first refresh period if the second error flag is indicative of no data errors in the memory area during the first self-refresh operation.
Inventor(s): Taewon Kim of Suwon-si (KR) for samsung electronics co., ltd., Sanghee Kang of Suwon-si (KR) for samsung electronics co., ltd., Kiho Hyun of Suwon-si (KR) for samsung electronics co., ltd., Taeyun Kim of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): G11C29/44, G11C29/12, G11C29/24
CPC Code(s): G11C29/44
Abstract: a method of testing a repair circuit of a memory device. the method may include storing first addresses in a first register of the repair circuit, wherein the first register is configured to store faulty addresses during a normal operation of the memory device, and the repair circuit is configured to perform a repair operation to replace the faulty addresses with redundancy addresses, storing test addresses in a second register of the repair circuit, wherein the test addresses are provided from a test host, outputting hit signals by comparing bit values of the addresses stored in the first register with bit values of the addresses stored in the second register, outputting repair enable signals based on the hit signals, and determining a status of a path where the repair enable signals are generated based on logic levels of the repair enable signals.
Inventor(s): Kyoungchul YOO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01J37/08, H01J37/317
CPC Code(s): H01J37/08
Abstract: a repeller may be mounted inside an arc chamber of an ion implantation apparatus for doping impurities into a surface film of a semiconductor wafer. the repeller may include a body including an outer circumferential surface and a surface area enlargement portion on the body. the surface area enlargement portion may include striped grooves continuously formed on the outer circumferential surface of the body at intervals in a longitudinal direction of the body.
Inventor(s): Heejae Chae of Suwon-si (KR) for samsung electronics co., ltd., Taejin Park of Suwon-si (KR) for samsung electronics co., ltd., Hyunjin Lee of Suwon-si (KR) for samsung electronics co., ltd., Hosang Lee of Suwon-si (KR) for samsung electronics co., ltd., Yun Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/308, H01L21/027, H01L21/311, H10B12/00
CPC Code(s): H01L21/3086
Abstract: a method of manufacturing a semiconductor device includes forming an etch target layer in a surface of a cell region comprising a cell center region and a cell edge region surrounding the cell center region, forming an edge mask pattern on the surface of the cell edge region through a quadruple patterning process on the etch target layer, and forming a plurality of center mask patterns spaced apart from each other on the cell center region, and forming a first etch pattern on the cell edge region by etching the etch target layer by using the edge mask pattern and the plurality of center mask patterns as etch masks and forming a plurality of second etch patterns spaced apart from each other on the cell center region.
Inventor(s): Minseon Kim of Suwon-si (KR) for samsung electronics co., ltd., Donghoon Kwon of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/67, A46B13/00, A46B13/02
CPC Code(s): H01L21/67046
Abstract: a brush assembly includes a first brush including a first body that is cylindrical, and a first vertical gear connected to a surface of the cylindrical first body that faces a third body, the first vertical gear being configured to rotate in a first vertical direction, a second brush including a first horizontal gear configured to rotate in a first horizontal direction and a second body connected to a lower portion of the first horizontal gear and rotatably connected to the first body, and a third brush including a second vertical gear connected to a surface of the third body that faces the first body, the second vertical gear being configured to rotate in a second vertical direction that is opposite to the first vertical direction, where the first horizontal gear is engaged with a lower portion of the first vertical gear.
Inventor(s): Youngchul KWON of SUWON-SI (KR) for samsung electronics co., ltd., Jimin KIM of SUWON-SI (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/78
CPC Code(s): H01L21/78
Abstract: provided is a method of dicing a wafer, the method including preparing a wafer having a plurality of device formation regions and a scribe lane region defining the plurality of device formation regions, forming a plurality of semiconductor devices in the plurality of device formation regions of the wafer, irradiating a first laser beam and a second laser beam of a wavelength different from the first laser beam along the scribe lane region to form a plurality of internal cracks in the wafer, and separating the plurality of semiconductor devices along the plurality of internal cracks, wherein the first laser beam includes a plurality of pulses sequentially emitted from a laser apparatus, and the second laser beam is continuous wave light emitted from the laser apparatus.
Inventor(s): Sunkyoung SEO of Suwon-si (KR) for samsung electronics co., ltd., Dohyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Yeongseon KIM of Suwon-si (KR) for samsung electronics co., ltd., Juhyeon KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyoeun KIM of Suwon-si (KR) for samsung electronics co., ltd., Jeongoh HA of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L21/66, H01L23/00, H01L25/065, H10B80/00
CPC Code(s): H01L22/32
Abstract: a semiconductor structure according to an embodiment may include: an interconnect structure on a substrate; an interlayer dielectric layer on the interconnect structure; a first conductive pad within the interlayer dielectric layer and electrically coupled with the interconnect structure; a second conductive pad within the interlayer dielectric layer and electrically decoupled from the interconnect structure; a first via plug within the interlayer dielectric layer; and a bonding structure on the interlayer dielectric layer and including a first bonding pad, a plurality of second bonding pads, and a bonding dielectric layer, wherein the first bonding pad is electrically coupled to the first via plug, some of the plurality of second bonding pads are spaced apart from the first conductive pad in a vertical direction, and others of the plurality of second bonding pads are spaced apart from the second conductive pad in the vertical direction.
Inventor(s): Gyuseong PARK of Suwon-si (KR) for samsung electronics co., ltd., Joongwon SHIN of Suwon-si (KR) for samsung electronics co., ltd., Jong-Min LEE of Suwon-si (KR) for samsung electronics co., ltd., Jimin CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/31, H01L21/56, H01L21/768, H01L23/00, H01L23/532
CPC Code(s): H01L23/3157
Abstract: a semiconductor device includes an interlayer insulating layer, a first protective insulating layer on the interlayer insulating layer, a second protective insulating layer on the first protective insulating layer, and insulating structures disposed in at least one of the first protective insulating layer or the second protective insulating layer, wherein the insulating structures include a first insulating structure including a first material having a first physical property, and a second insulating structure including a second material having a second physical property, and the first material and the second material include a same material, and the first physical property and the second physical property are different physical properties.
Inventor(s): Seungchan YUN of Waterford NY (US) for samsung electronics co., ltd., Wonhyuk Hong of Clifton Park NY (US) for samsung electronics co., ltd., Keumseok Park of Slingerlands NY (US) for samsung electronics co., ltd., Se Jung Park of Watervliet NY (US) for samsung electronics co., ltd., Kang-ill Seo of Springfield VA (US) for samsung electronics co., ltd.
IPC Code(s): H01L23/48, H01L29/06, H01L29/423, H01L29/66, H01L29/775, H01L29/786
CPC Code(s): H01L23/481
Abstract: provided is a semiconductor device including: a channel structure; source/drain regions connected by the channel structure; and a backside contact structure formed below at least one of the source/drain region, wherein, in a 1-direction cross section view, a width of an upper portion of the backside contact structure close to the source/drain region is smaller than a width of a lower portion of the backside contact structure distant from the source/drain region, wherein, in a 2-direction cross-section view, widths of the upper portion and the lower portion of the backside contact structure are substantially uniform along a vertical downward direction, and wherein the 1direction intersects the 2direction.
Inventor(s): Panjae PARK of Halfmoon NY (US) for samsung electronics co., ltd., Kang-ill SEO of Springfield VA (US) for samsung electronics co., ltd.
IPC Code(s): H01L23/48, H01L29/06, H01L29/417, H01L29/423, H01L29/775, H01L29/786
CPC Code(s): H01L23/481
Abstract: provided is a semiconductor device in which a large-cpp area includes a 1source/drain structure; a 1frontside contact structure, at a front side of the semiconductor device, connected to the 1source/drain structure; a 1via structure, at a lateral side of the 1source/drain structure, connected to the 1frontside contact structure; a 2via structure on the 1frontside via structure; a 1frontside metal line, at the front side of the semiconductor device, connected to the 2via structure; and a 1backside metal line, at a back side of the semiconductor device, connected to the 1via structure.
Inventor(s): Minjae Jeong of Suwon-si (KR) for samsung electronics co., ltd., Jungho Do of Suwon-si (KR) for samsung electronics co., ltd., Jisu Yu of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/48, H01L27/092, H01L29/06, H01L29/423, H01L29/66, H01L29/775, H01L29/78, H01L29/786
CPC Code(s): H01L23/481
Abstract: an integrated circuit includes standard cells on a front surface of a substrate, a front wiring layer extending in a first direction on the front surface of the substrate, and a backside wiring layer disposed on a rear surface of the substrate. a first standard cell of the standard cells includes a first gate line and a second gate line arranged apart from each other in the first direction to each extend in a second direction and power tap cells between the first and second gate lines, the power tap cells include a first power tap cell and a second power tap cell apart from the first power tap cell by a first interval in the first direction, and each of the first and second power tap cells is configured to electrically connect the backside wiring layer with the front wiring layer.
Inventor(s): Dongjoon OH of Suwon-si (KR) for samsung electronics co., ltd., Junyun KWEON of Cheonan-si (KR) for samsung electronics co., ltd., Jumyong PARK of Cheonan-si (KR) for samsung electronics co., ltd., Jin Ho AN of Seoul (KR) for samsung electronics co., ltd., Chungsun LEE of Asan-si (KR) for samsung electronics co., ltd., Hyunsu HWANG of Siheung-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/498, H01L23/00, H01L23/31, H01L23/538, H01L25/10
CPC Code(s): H01L23/49822
Abstract: disclosed are interconnection structures and semiconductor packages. the interconnection structure includes a first dielectric layer and a first hardmask pattern that are sequentially stacked, and a first interconnection pattern that penetrates the first hardmask pattern and the first dielectric layer. the first hardmask pattern includes a dielectric material having an etch selectivity with respect to the first dielectric layer. the first interconnection pattern includes a via part, a first pad part, and a line part that are integrally connected to each other. the first pad part vertically overlaps the via part. the line part extends from the first pad part. a level of a bottom surface of the first pad part is lower than a level of a bottom surface of the line part.
Inventor(s): Jaechoon Kim of Suwon-si (KR) for samsung electronics co., ltd., Seunggeol Ryu of Suwon-si (KR) for samsung electronics co., ltd., Kyungsuk Oh of Seongnam-si (KR) for samsung electronics co., ltd., Keungbeum Kim of Hwaseong-si (KR) for samsung electronics co., ltd., Eonsoo Jang of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/528, H01L23/00, H01L23/36, H01L23/48, H01L23/522
CPC Code(s): H01L23/5286
Abstract: an integrated circuit semiconductor device includes a substrate having a first surface and a second surface opposite the first surface; a rail through via passing between the first surface and the second surface of the substrate; a cell-level portion arranged on the first surface and comprising a buried rail connected to the rail through via, a local conductive interconnect, a cell via connected to the local conductive interconnect, and a transistor connected to the local conductive interconnect; a signal wiring-level portion arranged on the cell-level portion and comprising a plurality of upper multi-layer interconnect layers connected to the local conductive interconnect via the cell via and upper vias connecting the upper multi-layer interconnect layers to each other; a dummy substrate arranged on the signal wiring-level portion; a bonding-level portion arranged between the signal wiring-level portion and the dummy substrate and bonding the signal wiring-level portion to the dummy substrate, and comprising a bonding pad connected to the upper via; a power delivery network-level portion arranged under the second surface of the substrate and comprising a plurality of lower multi-layer interconnect layers connected to the rail through via and lower vias connecting the lower multi-layer interconnect layers to each other; and an external connection terminal arranged under the power delivery network-level portion and connected to the lower multi-layer interconnect layers.
20240290738. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Bongwee Yu of Suwon-si (KR) for samsung electronics co., ltd., Junho Huh of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00, H01L23/48, H01L23/522
CPC Code(s): H01L24/06
Abstract: a semiconductor device includes a first die having a first and second physical layer regions adjacent each other, connecting pads and a connecting wire on a lower surface of the first die, a rear wiring layer having a first rear wire on the first die, and through silicon vias penetrating the first die, the through silicon vias including a first and second through silicon vias. the connecting pads include a first and a second connecting pads electrically connected with the first and second physical layer regions respectively, and a first and a second pads electrically connected with the first and second through silicon vias respectively. the first rear wire is electrically connected with the first and second through silicon vias. the connecting wire is electrically connected with the first connecting pad and the first pad.
Inventor(s): Yonghwan Kwon of Yongin-si (KR) for samsung electronics co., ltd., Yongjin Park of Yongin-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L23/00, H01L23/31, H01L23/498
CPC Code(s): H01L24/08
Abstract: a semiconductor package includes a first redistribution structure, including a first insulating layer and a first redistribution layer disposed below the first insulating layer; a semiconductor chip disposed on the first redistribution structure, including a connection terminal electrically connected to the first redistribution layer and buried in the first insulating layer; an encapsulant disposed on the first redistribution structure that seals a portion of the semiconductor chip; a second redistribution structure, including a second redistribution layer disposed on the encapsulant; and a through via, including a pattern portion buried in the first insulating layer and electrically connected to the first redistribution layer and a via portion penetrating through the encapsulant and electrically connecting the pattern portion and the second redistribution layer. the connection terminal and the pattern portion are located at a first level and are electrically connected to each other at a second level lower than the first level.
20240290750. SEMICONDUCTOR PACKAGES_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Hyoeun LEE of Suwon-si (KR) for samsung electronics co., ltd., Hyunggil BAEK of Suwon-si (KR) for samsung electronics co., ltd., Su-Chang LEE of Suwon-si (KR) for samsung electronics co., ltd., Gyunghwan OH of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L23/00, H01L23/13, H01L23/29, H01L23/31, H01L23/498, H01L25/16, H10B80/00
CPC Code(s): H01L25/0652
Abstract: a semiconductor package includes a substrate including a first region having a recess defined therein and a second region spaced apart from the first region. the second region does not include the recess. a three-dimensional (3d) integrated circuit structure is on the first region. the 3d integrated circuit structure includes a first semiconductor chip die and a second semiconductor chip die disposed on the first semiconductor chip die. a plurality of connecting members electrically connecting the first semiconductor chip die to the substrate. a first side of each connecting member of the plurality of connecting members directly contacts the first semiconductor chip die and a second side that is opposite to the first side directly contacts the first region. a memory structure is disposed in the second region and positioned side by side with the 3d integrated circuit structure.
20240290751. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Bongken YU of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L23/00, H01L25/18
CPC Code(s): H01L25/0652
Abstract: a semiconductor package includes a package substrate, a logic chip on an upper surface of the package substrate and electrically connected to the package substrate, a heat sink contacting an upper surface of the logic chip to dissipate a heat generating from the logic chip, and a memory chip disposed on an upper surface of the heat sink and electrically connected to the package substrate.
Inventor(s): Young Lyong Kim of Anyang-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/065, H01L23/00, H01L23/31, H01L25/00
CPC Code(s): H01L25/0657
Abstract: a semiconductor package includes a first semiconductor chip mounted on a substrate, a first conductive post disposed on the substrate and spaced apart from the first semiconductor chip, a second semiconductor chip disposed on the first semiconductor chip and the first conductive post, and a mold layer on the substrate that covers the first and second semiconductor chips and the first conductive post. the second semiconductor chip is supported on the first semiconductor chip by a first dummy solder terminal provided between the first and second semiconductor chips, and is coupled to the first conductive post by a first signal solder terminal provided between the first conductive post and the second semiconductor chip. the first dummy solder terminal is in direct contact with a top surface of the first semiconductor chip, and is electrically disconnected from the second semiconductor chip.
20240290762. SEMICONDUCTOR PACKAGE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): CHOONGBIN YIM of Suwon-si (KR) for samsung electronics co., ltd., JONGKOOK KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L25/10, H01L23/31, H01L23/538, H01L25/065, H10B80/00
CPC Code(s): H01L25/105
Abstract: a semiconductor package includes a first redistribution substrate, a connection substrate on the first redistribution substrate, wherein the connection substrate includes an opening extending through the connection substrate, a chip structure including a first semiconductor chip in the opening and on the first redistribution substrate, a first interposer substrate including a through electrode extending through the first interposer substrate in the opening and on the first redistribution substrate, wherein the first interposer substrate is spaced apart from the chip structure, a second semiconductor chip on the first interposer substrate and electrically connected to the through electrode, a first molding layer on the chip structure, first interposer substrate, and second semiconductor chip, and a second redistribution substrate on the first molding layer and connection substrate, wherein a lower surface of the chip structure and the first interposer substrate are in electrical contact with an upper surface of the first redistribution substrate.
Inventor(s): Hee JEONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/02, G06F30/392, G06F30/398, H01L21/027, H01L23/544
CPC Code(s): H01L27/0207
Abstract: a layout design method includes: designing a gate layout including a gate pattern in a first region and a gate alignment key pattern in a second region; designing a contact layout including a contact pattern in a first region and a contact alignment key pattern in a second region; and designing a contact cut layout including a contact cut pattern for cutting a portion of the contact pattern and for cutting a portion of the contact alignment key pattern, wherein the contact alignment key pattern includes a gate-contact overlay pattern that overlaps the gate alignment key pattern, and the contact cut pattern includes a gate-contact overlay cut pattern that overlaps the gate-contact overlay pattern.
Inventor(s): Sunki MIN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/118
CPC Code(s): H01L27/11807
Abstract: a semiconductor device may include a substrate including a first dummy region and a second dummy region spaced apart from each other and a trench between the first dummy region and the second region, a device isolation layer filling the trench between the first dummy region and the second dummy region, a dielectric structure on the device isolation layer; an interlayer dielectric layer on the dielectric structure, a power line on the interlayer dielectric layer, a power delivery network layer on a bottom surface of the substrate, and a through via extending from the power delivery network layer through the dielectric structure to the power line. an upper portion of the device isolation layer may include a protrusion and a trough, and the dielectric structure may cover the protrusion and the trough.
Inventor(s): Wonhyeok Kim of Suwon-si (KR) for samsung electronics co., ltd., Seungjoo Nah of Suwon-si (KR) for samsung electronics co., ltd., Heegeun Jeong of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
CPC Code(s): H01L27/1463
Abstract: an image sensor is provided, and the image sensor includes: a substrate having first and second surfaces spaced apart from each other in a vertical direction; a first color unit pixel including a first subpixel to a fourth subpixel arranged in a 2�2 matrix; a second color unit pixel including four subpixels arranged in a 2�2 matrix; a first pixel isolation trench separating the first color unit pixel and the second color unit pixel; a second pixel isolation trench separating the first subpixel and the second subpixel of the first color unit pixel; a third pixel isolation trench on a point of intersection of the first to fourth subpixels of the first color unit pixel. the first color unit pixel detects first color light. the second color unit pixel detects second color light. the image sensor is configured to receive the first color light on the second surface. the second pixel isolation trench extends from the first surface to the second surface. the third pixel isolation trench extends from the second surface to the first surface.
20240290812. IMAGE SENSOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): SEUNGKUK KANG of Suwon-si (KR) for samsung electronics co., ltd., TAEYON LEE of Suwon-si (KR) for samsung electronics co., ltd., HYO EUN KIM of Suwon-si (KR) for samsung electronics co., ltd., Gyuseok LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L27/146
CPC Code(s): H01L27/14636
Abstract: an image sensor comprising a circuit chip and an image sensor chip on the circuit chip. the image sensor chip includes a first substrate extending in a first direction and a second direction, a first interlayer dielectric layer between the first substrate and the circuit chip, and a first bonding pad in the first interlayer dielectric layer and having a first width in a first direction. the circuit chip includes a second substrate, a second interlayer dielectric layer and a third interlayer dielectric layer that are sequentially stacked on the second substrate, and a second bonding pad in the second and third interlayer dielectric layers and having a second width in the first direction. the first and second bonding pads are in contact with each other. a change in the second width along a third direction is greater than a change in the first width along the third direction, the third direction intersects the first and second directions.
Inventor(s): Hyungjun KIM of Suwon-si (KR) for samsung electronics co., ltd., Sang Woon LEE of Suwon-si (KR) for samsung electronics co., ltd., Se Eun KIM of Gunpo-si (KR) for samsung electronics co., ltd., Hye Min LEE of Suwon-si (KR) for samsung electronics co., ltd., Jae Deock JEON of Suwon-si (KR) for samsung electronics co., ltd., Cheheung KIM of Hwaseong-si (KR) for samsung electronics co., ltd., Boeun PARK of Suwon-si (KR) for samsung electronics co., ltd., Jooho LEE of Suwon-si (KR) for samsung electronics co., ltd., Changsoo LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): C23C16/455
CPC Code(s): H01L28/55
Abstract: a method of manufacturing, by atomic layer deposition, an electrode including a perovskite type crystal structure represented by formula 1, includes: forming a vanadium-containing precursor on a substrate; forming a vanadium-containing intermediate phase by reacting the vanadium-containing precursor with oxygen molecules; and forming a first thin film by reacting the vanadium-containing intermediate phase with water.
Inventor(s): Hyungjun KIM of Suwon-si (KR) for samsung electronics co., ltd., Sang Woon LEE of Suwon-si (KR) for samsung electronics co., ltd., Se Eun KIM of Gunpo-si (KR) for samsung electronics co., ltd., Hye Min LEE of Suwon-si (KR) for samsung electronics co., ltd., Jae Deock JEON of Suwon-si (KR) for samsung electronics co., ltd., Cheheung KIM of Hwaseong-si (KR) for samsung electronics co., ltd., Boeun PARK of Suwon-si (KR) for samsung electronics co., ltd., Jooho LEE of Suwon-si (KR) for samsung electronics co., ltd., Changsoo LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): C23C16/455
CPC Code(s): H01L28/55
Abstract:
Inventor(s): Minho CHOI of Suwon-si (KR) for samsung electronics co., ltd., Kiseok LEE of Suwon-si (KR) for samsung electronics co., ltd., Chansic YOON of Suwon-si (KR) for samsung electronics co., ltd., Jaybok CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/06, H01L29/423, H01L29/78, H10B12/00
CPC Code(s): H01L29/0649
Abstract: a semiconductor device includes device isolation layers extending in a first horizontal direction and spaced apart from each other in a second horizontal direction intersecting the first horizontal direction, active regions between the device isolation layers and spaced apart from each other in the first horizontal direction, insulating structures between the active regions, and a gate structure extending in a third horizontal direction between the first horizontal direction and the second horizontal direction and intersecting the active regions, wherein two side surfaces of each active region adjacent to each other define an acute angle, and wherein at least a portion of at least one of the insulating structures is between a corresponding pair of the active regions and between a corresponding pair of the device isolation layers and overlaps the corresponding pair of the active regions in the first horizontal direction.
Inventor(s): Jaehong LEE of Latham NY (US) for samsung electronics co., ltd., Seung Min Song of Clifton Park NY (US) for samsung electronics co., ltd., Kang-ill Seo of Springfield VA (US) for samsung electronics co., ltd.
IPC Code(s): H01L29/06, H01L27/06, H01L29/08, H01L29/423, H01L29/775, H01L29/786, H01L29/861
CPC Code(s): H01L29/0653
Abstract: provided is a semiconductor device including: a 1source/drain region and a 1backside contact structure, vertically below the 1source/drain region, connected to the 1source/drain region; a 2source/drain region and a 1placeholder isolation structure vertically below the 2source/drain region; and a backside isolation structure, on a back side of the semiconductor device, surrounding the 1st backside contact structure and the 1st placeholder isolation structure.
Inventor(s): Carlos C.J ALCANTARA of Suwon-Si (KR) for samsung electronics co., ltd., Chisung BAE of Suwon-si (KR) for samsung electronics co., ltd., Kitae PARK of Suwon-si (KR) for samsung electronics co., ltd., Mikyung KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/41, H01L27/092
CPC Code(s): H01L29/41
Abstract: a nanocavity-based electrode and a complementary metal-oxide-semiconductor-based device including the same are provided. in the nanocavity-based electrode, a single or a plurality of unit layers is stacked, and each unit layer includes a single or a plurality of nanocavities.
Inventor(s): Seung Min SONG of Halfmoon NY (US) for samsung electronics co., ltd., Panjae PARK of Clifton Park NY (US) for samsung electronics co., ltd., Kang-ill SEO of Springfield VA (US) for samsung electronics co., ltd.
IPC Code(s): H01L29/417, H01L29/40
CPC Code(s): H01L29/41766
Abstract: provided is a semiconductor device which includes: a backside contact plug, formed at a back side of the semiconductor device, below a source/drain region connected to the backside contact plug, wherein the backside contact plug includes a 1portion which is not vertically overlapped by the circuit element.
20240290855. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Deok Han BAE of Suwon-si (KR) for samsung electronics co., ltd., Ju Hun PARK of Seoul (KR) for samsung electronics co., ltd., Myung Yoon UM of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/417, H01L27/092, H01L29/06, H01L29/423, H01L29/78, H01L29/786
CPC Code(s): H01L29/41775
Abstract: a semiconductor device including a field insulating layer, a part of which protrudes upwardly in a vertical direction on an element isolation region between a first active region and a second active region may be provided. accordingly, a depth of a source/drain contact to be provided may be reduced, thereby reducing difficulty for providing the source/drain contact may be reduced.
Inventor(s): Wonhyuk HONG of Clifton Park NY (US) for samsung electronics co., ltd., Jongjin LEE of Clifton Park NY (US) for samsung electronics co., ltd., Taesun KIM of Ballston Spa NY (US) for samsung electronics co., ltd., Myunghoon JUNG of Clifton Park NY (US) for samsung electronics co., ltd., Kang-ill SEO of Springfield VA (US) for samsung electronics co., ltd.
IPC Code(s): H01L29/66, H01L21/8234, H01L23/528, H01L27/088, H01L29/06, H01L29/08, H01L29/423, H01L29/775, H01L29/786
CPC Code(s): H01L29/66545
Abstract: a system and a method are disclosed for forming a bottle-neck shaped backside contact structure in a semiconductor device, wherein the bottle-neck shaped backside contact structure has a first side partially within the first source/drain structure, a second side contacting a backside power rail, and a liner extending from the first side to the backside power rail. the liner includes a first region comprised of either a ta silicide liner or a ti silicide liner, a second region comprised of a ti/tin liner and a third region comprised of either a ta silicide liner or a ti silicide liner. the backside contact structure includes a first portion having a positive slope and a second portion, adjacent to the first portion, having no slope.
20240290868. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Taejin PARK of Suwon-si (KR) for samsung electronics co., ltd., Bongsoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Huijung KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/66, H01L29/06, H10B12/00
CPC Code(s): H01L29/6656
Abstract: a semiconductor device includes a first structure including a first impurity region, a second impurity region, and an isolation region, a second structure on the first structure and including a contact opening penetrating through the second structure and exposing the first impurity region, a pattern structure including a contact portion connected to the first impurity region in the contact opening, and a line portion on the contact portion and the second structure, and a spacer structure between a side surface of the contact opening and the contact portion. the spacer structure includes a first spacer layer on the side surface of the contact opening, and a second spacer layer between the first spacer layer and the contact portion. a lower end of the second spacer layer is at a higher level than a lower surface of the contact portion.
20240290888. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jae-Hoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Gi-gwan PARK of Hwaseong-si (KR) for samsung electronics co., ltd., Tae-young KIM of Hwaseong-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/78, H01L29/08, H01L29/15, H01L29/16, H01L29/20, H01L29/22, H01L29/267, H01L29/66
CPC Code(s): H01L29/7851
Abstract: a semiconductor device includes a substrate including a fin-shaped active region that protrudes from the substrate, a gate insulating film covering a top surface and both side walls of the fin-shaped active region, a gate electrode on the top surface and the both side walls of the fin-shaped active region and covering the gate insulating film, one pair of insulating spacers on both side walls of the gate electrode, one pair of source/drain region on the fin-shaped active region and located on both sides of the gate electrode, and a lower buffer layer between the fin-shaped active region the source/drain region. the source/drain regions include a compound semiconductor material including atoms from different groups. the lower buffer layer includes a compound semiconductor material that is amorphous and includes atoms from different groups.
Inventor(s): Ki Joon KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L29/786, H01L27/092, H01L27/12, H01L29/24, H01L29/423, H01L29/49, H01L29/66, H01L29/775
CPC Code(s): H01L29/78696
Abstract: a semiconductor device including a substrate, a first bridge pattern spaced apart from the substrate and extending in a first direction and including a two-dimensional chalcogenide in which a semiconductor element and a chalcogen element are combined, a gate structure extending in a second direction intersecting the first direction and through which the first bridge pattern penetrates, a gate spacer extending along a side surface of the gate structure and through which the first bridge pattern penetrates and a source/drain pattern connected to the first bridge pattern on a side surface of the gate spacer, wherein the first bridge pattern includes a first chalcogenization portion overlapping the gate structure and a second chalcogenization portion overlapping the gate spacer, and a concentration of the chalcogen element in the second chalcogenization portion is lower than a concentration of the chalcogen element in the first chalcogenization portion, may be provided.
20240290915. SEMICONDUCTOR LIGHT-EMITTING DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Juwon Jeong of Suwon-si (KR) for samsung electronics co., ltd., Sanghyun Kim of Suwon-si (KR) for samsung electronics co., ltd., Jiho You of Suwon-si (KR) for samsung electronics co., ltd., Sungwoo Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L33/46, H01L33/50, H01L33/60
CPC Code(s): H01L33/46
Abstract: a semiconductor light-emitting device includes a light emitting structure, a wavelength conversion member arranged on an upper surface of the light emitting structure, the wavelength conversion member including a first surface in contact with the light emitting structure, a second surface opposite to the first surface, and a sidewall, wherein the first surface entirely covers the upper surface of the light emitting structure, and a portion of the sidewall adjacent to the first surface is slanted with respect to the first surface, and a coating layer arranged on the second surface of the wavelength conversion member, the coating layer including a first material layer and a second material layer alternately stacked on the second surface, wherein the first material layer includes an oxide, and the second material layer includes magnesium fluoride (mgf), wherein the second material layer is arranged at an uppermost surface of the coating layer.
Inventor(s): Hyongsik WON of Suwon-si (KR) for samsung electronics co., ltd., Seongmin Kim of Suwon-si (KR) for samsung electronics co., ltd., Jeongeun Yun of Suwon-si (KR) for samsung electronics co., ltd., Jeongrok OH of Suwon-si (KR) for samsung electronics co., ltd., Sungwoo Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01L33/50, H01L25/075, H01L33/10, H01L33/48
CPC Code(s): H01L33/502
Abstract: a light emitting diode is provided and includes a first light emitting chip configured to emit red light having a peak wavelength within a range of 580 nm to 700 nm, and a wavelength converter including an encapsulant and at least one phosphor that is inside the encapsulant. the at least one phosphor is configured to absorb a portion of the red light and emit first-type light having a peak wavelength that is greater than the peak wavelength of the red light.
Inventor(s): Seitaro ITO of Kanagawa (JP) for samsung electronics co., ltd., Tomoyuki TSUJIMURA of Kanagawa (JP) for samsung electronics co., ltd., Yuichi AIHARA of Kanagawa (JP) for samsung electronics co., ltd.
IPC Code(s): H01M10/0562, C01G53/00, H01M4/38, H01M4/505, H01M4/525, H01M10/0585
CPC Code(s): H01M10/0562
Abstract: an all-solid secondary battery includes: a cathode layer including a cathode active material; an anode layer; and a solid electrolyte layer disposed between the cathode layer and the anode layer, wherein at least one of the cathode layer, the anode layer, or the solid electrolyte layer includes a phase-transition solid electrolyte material, wherein upon heating, the phase-transition solid electrolyte material undergoes a phase transition from a first phase to a second phase, and the second phase has an ionic conductivity less than the ionic conductivity of the first phase.
20240291159. ELECTRONIC DEVICE INCLUDING ANTENNA_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Changha YU of Suwon-si (KR) for samsung electronics co., ltd., Mincheol SEO of Suwon-si (KR) for samsung electronics co., ltd., Sangmok LEE of Suwon-si (KR) for samsung electronics co., ltd., Woosuk KANG of Suwon-si (KR) for samsung electronics co., ltd., Hyunsuk KIM of Suwon-si (KR) for samsung electronics co., ltd., Gyubok PARK of Suwon-si (KR) for samsung electronics co., ltd., Wonho LEE of Suwon-si (KR) for samsung electronics co., ltd., Jaebong CHUN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H01Q13/10, H01Q1/24
CPC Code(s): H01Q13/10
Abstract: an electronic device is provided. the electronic device includes a housing comprising a frame having a region configured to function as a slot antenna and a wireless communication circuit configured to perform a communication through the region. the frame includes a conductive portion at least partially formed along a periphery of the frame, a support portion of the frame, and a bridge portion formed between the conductive portion and the support portion. the bridge portion includes a first connection portion disposed between a first region of the conductive portion and the support portion, and includes a second connection portion disposed between a second region of the conductive portion and the support portion. the region includes a first elongated portion having a first longitudinal direction toward an interior of the housing, between the first connection portion of the bridge portion and the second connection portion of the bridge portion. the region includes a second elongated portion having a second longitudinal direction at least partially from a rear side to a front side of the housing, between the first region of the conductive portion and the second region of the conductive portion.
Inventor(s): Shinho KANG of Suwon-si (KR) for samsung electronics co., ltd., Moonyoung KIM of Suwon-si (KR) for samsung electronics co., ltd., Jeongwoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Jeongil KANG of Suwon-si (KR) for samsung electronics co., ltd., Sungyong JOO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H02J7/00, H01M10/42
CPC Code(s): H02J7/0025
Abstract: a battery system includes: a charging circuit comprising a bidirectional charger and a main processor; and a plurality of battery packs, wherein each of the plurality of battery packs comprises a battery cell and a battery processor, wherein the main processor is configured to transmit, by using the bidirectional charger, to the battery processor of each of the plurality of battery packs, a charging signal to charge the battery cell of each of the plurality of battery packs, wherein the battery processor is configured to: based on receiving the charging signal, sequentially perform constant current (cc) charging of each of the plurality of battery packs according to a predefined order, and based on the cc charging of the plurality of battery packs being completed, simultaneously perform constant voltage (cv) charging of each of the plurality of battery packs.
Inventor(s): Ying CHEN of San Jose CA (US) for samsung electronics co., ltd., Che-Chun KUO of San Jose CA (US) for samsung electronics co., ltd., Tienyu CHANG of Sunnyvale CA (US) for samsung electronics co., ltd.
IPC Code(s): H03F3/24, H01L23/66, H03F1/56, H04B1/44
CPC Code(s): H03F3/245
Abstract: a single-pole single-throw (spst) radio frequency (rf) switch is provided that includes one or more switches stacked in series, and a first capacitor disposed at an input side of the spst rf switch, in series, before the one or more switches. the spst rf switch also includes a second capacitor disposed, in parallel, across the one or more switches, and an inductor disposed at an output side of the spst rf switch, in series, after the one or more switches.
Inventor(s): Jaehun Choi of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04B5/00
CPC Code(s): H04B5/72
Abstract: a method of operating a near field communication (nfc) device includes generating a first and a second digital signal based on an analog input signal respectively received from an external device through a first channel and a second channel having a phase difference with the first channel, generating first decoded data by decoding the first digital signal based on a plurality of first convolution result values, generating second decoded data by decoding the second digital signal based on a plurality of second convolution result values, generating first convolution result data based on the plurality of first convolution result values, generating second convolution result data based on the plurality of second convolution result values, selecting a transmission channel from among the first channel and the second channel based on the first and second decoded data, and the first and second convolution result data, and performing communication with the external device based on the transmission channel.
Inventor(s): Nyeongmin KWON of Suwon-si (KR) for samsung electronics co., ltd., Seokyeong KWON of Suwon-si (KR) for samsung electronics co., ltd., Seok-Hyun KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04B5/00, H03H7/38
CPC Code(s): H04B5/77
Abstract: a short-range wireless communication device includes an impedance matching circuit configured to output a radio frequency (rf) signal in a turn-on period, the rf signal being based on a reference clock signal, and output a sensing signal in a turn-off period, and processing circuitry configured to extract a recovered clock signal from the sensing signal, detect a phase difference between the recovered clock signal and the reference clock signal, and detect a resonant frequency of the impedance matching circuit based on the phase difference.
Inventor(s): Xinliang Zhang of Plano TX (US) for samsung electronics co., ltd., Young Han Nam of Plano TX (US) for samsung electronics co., ltd., Jianzhong Zhang of Dallas TX (US) for samsung electronics co., ltd.
IPC Code(s): H04B7/08, H04B7/0413, H04L5/00
CPC Code(s): H04B7/0862
Abstract: a distributed unit (du) includes a processor and a transceiver operatively coupled to the processor. the transceiver is configured to transmit information indicating a plurality of candidate combining methods, and receive a compressed signal. the compressed signal is based on at least one of the candidate combining methods. the transceiver is further configured to receive, from a radio unit (ru), information indicating a combining method supported by the ru, from the plurality of candidate combining methods and transmit information indicating combining weights for the candidate combining method.
Inventor(s): Jaehyun LEE of Gyeonggi-do (KR) for samsung electronics co., ltd., Youngjoon KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Hanjin KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Seungil PARK of Gyeonggi-do (KR) for samsung electronics co., ltd., Yosub PARK of Gyeonggi-do (KR) for samsung electronics co., ltd., Jungsoo JUNG of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04B17/309, H04L25/02, H04W74/0833
CPC Code(s): H04B17/309
Abstract: the present disclosure relates to a 5generation (5g) or 6generation (6g) communication system for supporting higher data rates after a 4generation (4g) communication system such as long term evolution (lte).
Inventor(s): Jaehyun LEE of Gyeonggi-do (KR) for samsung electronics co., ltd., Youngjoon KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Hanjin KIM of Gyeonggi-do (KR) for samsung electronics co., ltd., Seungil PARK of Gyeonggi-do (KR) for samsung electronics co., ltd., Yosub PARK of Gyeonggi-do (KR) for samsung electronics co., ltd., Jungsoo JUNG of Gyeonggi-do (KR) for samsung electronics co., ltd.
IPC Code(s): H04B17/309, H04L25/02, H04W74/0833
CPC Code(s): H04B17/309
Abstract: according to an embodiment of the present disclosure, a method of identifying, by a base station (bs), a line-of-sight (los) channel in a wireless communication system may include: receiving, from a user equipment (ue), a signal for measuring a channel in each of multiple bands; determining, based on the signal, whether the channel is an los channel in each of the multiple bands; in response to a determination that the los channel exists in each of the multiple bands, identifying the channel as the los channel; and transmitting data to the ue, based on the los channel.
Inventor(s): Gilwon Lee of Allen TX (US) for samsung electronics co., ltd., Md. Saifur Rahman of Plano TX (US) for samsung electronics co., ltd., Eko Onggosanusi of Coppell TX (US) for samsung electronics co., ltd.
IPC Code(s): H04L5/00, H04B7/0417, H04B7/06
CPC Code(s): H04L5/0035
Abstract: apparatuses and methods for channel state information (csi) codebook parameters for coherent joint-transmission. a method performed by a user equipment (ue) includes receiving information about a csi report. the information indicates codebook parameters n≥1 combinations of values of {�, . . . , �} from a first table and a value of (m,�) from a second table. {�, . . . , �} is related to a number of a first set of vectors associated with each of ngroups of ports, where �≤1 for r=1, . . . , n, � is a parameter related to a maximum number of coefficients, and m is a parameter related to a second set of vectors. the method further includes determining the csi report based on the information and transmitting the csi report. the codebook parameters are configured based on a third table that links the first and second tables.
Inventor(s): Junho Lee of Hwaseong-si (KR) for samsung electronics co., ltd., Jaein Kim of Seoul (KR) for samsung electronics co., ltd., Huiwon Je of Osan-si (KR) for samsung electronics co., ltd., Jinwon Choi of Seongnam-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L5/00
CPC Code(s): H04L5/006
Abstract: a method of operating a wireless communication device including a plurality of antennas according to an exemplary embodiment of the present disclosure includes determining an antenna subset including at least one of the plurality of antennas, transmitting a sounding reference signal (srs) switching signal to a base station through at least one antenna of the antenna subset, receiving a channel state information-reference signal (csi-rs) transmitted using a first beam from the base station, selecting a precoding matrix indicator (pmi) based on the csi-rs, transmitting the selected pmi to the base station, and receiving a signal transmitted from the base station through a second beam determined based on the srs switching signal and the pmi.
Inventor(s): Jungkon KIM of Suwon-si (KR) for samsung electronics co., ltd., Wonsuk JANG of Suwon-si (KR) for samsung electronics co., ltd., Jinsu KIM of Suwon-si (KR) for samsung electronics co., ltd., Jongmin CHOI of Suwon-si (KR) for samsung electronics co., ltd., Minho KIM of Suwon-si (KR) for samsung electronics co., ltd., Juwoan YOO of Suwon-si (KR) for samsung electronics co., ltd., Moonsoo CHANG of Suwon-si (KR) for samsung electronics co., ltd., Inmyung CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L9/32, G06V40/16
CPC Code(s): H04L9/3231
Abstract: an electronic device encrypting biometric information includes memory for storing instructions and a processor. the instructions may be configured to, when executed by the processor, cause the electronic device to obtain a transformation matrix that maps a first feature value related to first biometric information to a first codeword, generate a third feature value by applying the transformation matrix to a second feature value related to second biometric information, compare a cosine similarity between a second codeword most similar to the third feature value and the third feature value with a threshold, map the second feature value to the second codeword based on the cosine similarity being greater than the threshold, and generate a hashed second codeword based on the second codeword, and transmit or store the hashed second codeword.
Inventor(s): Jaewoo SEO of Suwon-si (KR) for samsung electronics co., ltd., Hyunwoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Seongwon HAN of Suwon-si (KR) for samsung electronics co., ltd., Jeongyoon HEO of Suwon-si (KR) for samsung electronics co., ltd., Choonghoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Jungil CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L9/32, G06F21/16, G06V10/74
CPC Code(s): H04L9/3236
Abstract: according to an embodiment, an electronic device comprises: a communication circuit, at least one processor, and memory storing instructions. the electronic device may convert a first image into a latent vector using an encoder. the electronic device may obtain a first hash value by applying a hashing method to the latent vector for the first image. the electronic device may compare the first hash value for the first image with a second hash value for a second image; and determine whether the first image is plagiarized based on a result of the comparison.
Inventor(s): Jaewoo SEO of Suwon-si (KR) for samsung electronics co., ltd., Hyunwoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Seongwon HAN of Suwon-si (KR) for samsung electronics co., ltd., Jeongyoon HEO of Suwon-si (KR) for samsung electronics co., ltd., Choonghoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Jungil CHO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L9/40, G16Y40/10
CPC Code(s): H04L9/40
Abstract: an electronic device includes memory storing instructions, a communication circuit, and a processor. the instructions that cause the electronic device to: obtain state information collected by at least one first internet of things (iot) device and sound information comprising an amplitude of at least one sound signal collected by at least one second iot device, perform first anomaly monitoring, based on a correlation between the state information and the sound information, and perform second anomaly monitoring, based on the state information.
Inventor(s): Vishal MURGAI of Bangalore (IN) for samsung electronics co., ltd., Swaraj KUMAR of Bangalore (IN) for samsung electronics co., ltd., Srihari Das SUNKADA GOPINATH of Bangalore (IN) for samsung electronics co., ltd., Gihyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Hyunho LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04L41/147, G06N5/022, H04L41/16
CPC Code(s): H04L41/147
Abstract: the disclosure describes a method and system for dynamic frequency scaling of multi-core processor in wireless communication networks. the method comprising: transmitting, by a network node (nn), core-load data and a plurality of key indicators of each core group of a plurality of core groups in the multi-core processor to a central management entity (cme); receiving, by the nn, a core-load prediction model associated for each core group from the cme; determining, by the nn, an estimated core-load data for each core group using the associated core-load prediction model and determining, by the nn, a maximum estimated core-load data among the estimated core-load data of each core group; and determining, by the nn, an optimum multi-core processor frequency for the network node based on the maximum estimated core-load data.
Inventor(s): Hojung NAM of Suwon-si (KR) for samsung electronics co., ltd., Junwoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Chankyu AN of Suwon-si (KR) for samsung electronics co., ltd., Sungkoo PARK of Suwon-si (KR) for samsung electronics co., ltd., Cheolhong SON of Suwon-si (KR) for samsung electronics co., ltd., Soonho HWANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04M1/02, H01Q1/24, H05K1/02, H05K7/14
CPC Code(s): H04M1/0277
Abstract: an electronic device is provided. the electronic device includes a housing including a first plate, a second plate, and a side member, a metal structure of which a part is connected to the side member, and a printed circuit board. the side member includes a first conductive portion, a second conductive portion, a third conductive portion, a first segment formed between the first conductive portion and the second conductive portion, and a second segment formed between the first conductive portion and the third conductive portion. the first conductive portion is connected to a first ground part disposed on the printed circuit board through a first path, and is connected to a second ground part disposed on the metal structure through a second path spaced from the first path by a specific distance.
Inventor(s): Juyeon LEE of Suwon-si (KR) for samsung electronics co., ltd., Hyunjoo KANG of Suwon-si (KR) for samsung electronics co., ltd., Hyojin KIM of Suwon-si (KR) for samsung electronics co., ltd., Yeeun CHOI of Suwon-si (KR) for samsung electronics co., ltd., Hoon HAN of Suwon-si (KR) for samsung electronics co., ltd., Jiwoong HWANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N5/74, G06T7/62, G06V10/141
CPC Code(s): H04N5/74
Abstract: in an electronic device according to an embodiment, the electronic device may include: an actuator configured to move the electronic device, a sensor, a projection assembly including light emitting circuitry, at least one processor, and a memory storing instructions. the instructions, when executed by one or more of the at least one processor, cause the electronic device to, in response to an input for playing a media content stored in the memory, identify an external object included in the media content. the instructions, when executed by one or more of the at least one processor, cause the electronic device to, in a first state in which an external object adjacent to the electronic device is identified, emit a light representing the media content, facing a direction adjacent to the external object, by controlling the projection assembly, based on data of the sensor. the present disclosure relates to a metaverse service for enhancing interconnectivity between a real object and a virtual object. for example, the metaverse service may be provided through a network based on fifth generation (5g) and/or sixth generation (6g).
Inventor(s): Changmo YANG of Suwon-si (KR) for samsung electronics co., ltd., Seungjoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Younju JIN of Suwon-si (KR) for samsung electronics co., ltd., Eunha CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N9/31, G06T7/215
CPC Code(s): H04N9/3188
Abstract: an electronic device is provided. a processor of the electronic device may cause the electronic device to obtain first information for a first video displayable through a display of an external electronic device, from the external electronic device using a communication circuit. the processor may cause the electronic device to execute a scan on the first video using a plurality of images in the first video. may cause the electronic device to identify a time to be spent to obtain second information for displaying a second video expanded from the first video to be displayed through the display of the external electronic device, based on the scan. the disclosure relates to a metaverse service for enhancing interconnectivity between a real object and a virtual object. for example, the metaverse service is provided through a network based on fifth generation (5g) and/or sixth generation (6g).
Inventor(s): Minwoo PARK of Suwon-si (KR) for samsung electronics co., ltd., Minsoo PARK of Suwon-si (KR) for samsung electronics co., ltd., Kiho CHOI of Suwon-si (KR) for samsung electronics co., ltd., Narae CHOI of Suwon-si (KR) for samsung electronics co., ltd., Woongil CHOI of Suwon-si (KR) for samsung electronics co., ltd., Chanyul KIM of Suwon-si (KR) for samsung electronics co., ltd., Seungsoo JEONG of Suwon-si (KR) for samsung electronics co., ltd., Anish TAMSE of Suwon-si (KR) for samsung electronics co., ltd., Yinji PIAO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N19/186, H04N19/119, H04N19/122, H04N19/176, H04N19/70
CPC Code(s): H04N19/186
Abstract: provided is an image decoding method including determining a plurality of coding units in a chroma image by hierarchically splitting the chroma image, based on a split shape mode of blocks in the chroma image of a current image, and decoding the current image, based on the plurality of coding units in the chroma image. in this regard, the determining of the plurality of coding units in the chroma image may include, when a size or an area of a chroma block from among a plurality of chroma blocks to be generated by splitting a current chroma block in the chroma image is equal to or smaller than a preset size or a preset area, not allowing splitting of the current chroma block based on a split shape mode of the current chroma block, and determining at least one coding unit included in the current chroma block.
Inventor(s): Ki-ho CHOI of Seoul (KR) for samsung electronics co., ltd., Min-soo PARK of Seoul (KR) for samsung electronics co., ltd., Elena ALSHINA of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H04N19/44, H04N19/122, H04N19/159, H04N19/176, H04N19/186
CPC Code(s): H04N19/45
Abstract: a method and apparatus for performing transformation and inverse transformation on a current block by using multi-core transform kernels in video encoding and decoding processes. a video decoding method may include obtaining, from a bitstream, multi-core transformation information indicating whether multi-core transformation kernels are to be used according to a size of a current block; obtaining horizontal transform kernel information and vertical transform kernel information from the bitstream when the multi-core transformation kernels are used according to the multi-core transformation information; determining a horizontal transform kernel for the current block according to the horizontal transform kernel information; determining a vertical transform kernel for the current block according to the vertical transform kernel information; and performing inverse transformation on the current block by using the horizontal transform kernel and the vertical transform kernel.
Inventor(s): Ki-ho Choi of Seoul (KR) for samsung electronics co., ltd., Min-soo Park of Seoul (KR) for samsung electronics co., ltd., Elena Alshina of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H04N19/44, H04N19/122, H04N19/159, H04N19/176, H04N19/186
CPC Code(s): H04N19/45
Abstract: a method and apparatus for performing transformation and inverse transformation on a current block by using multi-core transform kernels in video encoding and decoding processes. a video decoding method may include obtaining, from a bitstream, multi-core transformation information indicating whether multi-core transformation kernels are to be used according to a size of a current block; obtaining horizontal transform kernel information and vertical transform kernel information from the bitstream when the multi-core transformation kernels are used according to the multi-core transformation information; determining a horizontal transform kernel for the current block according to the horizontal transform kernel information; determining a vertical transform kernel for the current block according to the vertical transform kernel information; and performing inverse transformation on the current block by using the horizontal transform kernel and the vertical transform kernel.
Inventor(s): Ki-ho CHOI of Seoul (KR) for samsung electronics co., ltd., Min-soo PARK of Seoul (KR) for samsung electronics co., ltd., Elena ALSHINA of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H04N19/44, H04N19/122, H04N19/159, H04N19/176, H04N19/186
CPC Code(s): H04N19/45
Abstract: a method and apparatus for performing transformation and inverse transformation on a current block by using multi-core transform kernels in video encoding and decoding processes. a video decoding method may include obtaining, from a bitstream, multi-core transformation information indicating whether multi-core transformation kernels are to be used according to a size of a current block; obtaining horizontal transform kernel information and vertical transform kernel information from the bitstream when the multi-core transformation kernels are used according to the multi-core transformation information; determining a horizontal transform kernel for the current block according to the horizontal transform kernel information; determining a vertical transform kernel for the current block according to the vertical transform kernel information; and performing inverse transformation on the current block by using the horizontal transform kernel and the vertical transform kernel.
Inventor(s): Alexander ALSHIN of Suwon-si (KR) for samsung electronics co., ltd., Elena ALSHINA of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N19/577, H04N19/105, H04N19/136, H04N19/176, H04N19/182, H04N19/523, H04N19/537
CPC Code(s): H04N19/577
Abstract: a video decoding and video encoding method of performing inter prediction in a bi-directional motion prediction mode, in which a prediction pixel value of a current block may be generated by not only using a pixel value of a first reference block of a first reference picture and a pixel value of a second reference block of a second reference picture, but also using a first gradient value of the first reference block and a second gradient value of the second reference block, in a bi-directional motion prediction mode. accordingly, encoding and decoding efficiency may be increased since a prediction block similar to an original block may be generated.
Inventor(s): Hyehyun CHOI of Suwon-si (KR) for samsung electronics co., ltd., Hyeonung KIM of Suwon-si (KR) for samsung electronics co., ltd., Sehwa JANG of Suwon-si (KR) for samsung electronics co., ltd., Shunghan CHO of Suwon-si (KR) for samsung electronics co., ltd., Jaepil HA of Suwon-si (KR) for samsung electronics co., ltd., Gilseong HEO of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N23/62, G06F9/54
CPC Code(s): H04N23/62
Abstract: an image processing system includes a user interface configured to receive first setting data from a user and transmit a setting change command corresponding to the first setting data, a platform configured to hook a first call command into a second call command in response to receiving the setting change command, and a driver configured to transmit, to an image sensor, one of a first operation setting command corresponding to the first call command or a second operation setting command corresponding to the second call command, the second call command associated with changing a setting value of the image sensor, the second operation setting command associated with setting the setting value of the image sensor based on the first setting data. the driver is further configured to, in response to receiving the second call command, transmit the second operation setting command to the image sensor.
Inventor(s): Hyeyun JUNG of Suwon-si (KR) for samsung electronics co., ltd., Seongwook SONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N23/68, G06T7/11
CPC Code(s): H04N23/683
Abstract: a camera includes a first image sensor, a second image sensor, and processing circuitry configured to, generate target synthetic image data based on a target first frame from the plurality of first frames and a target second frame from the plurality of second frames, the target second frame corresponding to the target first frame, determine whether to perform an image stabilization operation on the target synthetic image data based on distance data related to distances of one or more objects included in the target synthetic image data, and perform the image stabilization operation based on results of the determination.
Inventor(s): Joohyun LEE of Suwon-si (KR) for samsung electronics co., ltd., Dusic YOO of Suwon-si (KR) for samsung electronics co., ltd., Juntaek KONG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N23/81, G06T3/40, G06T5/20, G06T5/70, G06T5/73, G06T7/00, G06T7/13
CPC Code(s): H04N23/81
Abstract: an image signal processor includes a down-scaling circuit that generates a first image signal by down-scaling an input image signal, an image processing engine including a first recomposition circuit that generates a target image signal based on the first image signal, a first up-scaling circuit that generates a third image signal based on a second image signal generated by the image processing engine, a second recomposition circuit that generates an output image signal based on the third image signal, a second up-scaling circuit that generates a fourth image signal by up-scaling the first image signal, and a correction information generation circuit that generates an image information signal by extracting, from the input image signal and the fourth image signal, information about an image quality loss of the first image signal, and transmits the image information signal to the first or the second recomposition circuit depending on a mode.
Inventor(s): Junsang YU of Suwon-si (KR) for samsung electronics co., ltd., Dong Young KIM of Seoul (KR) for samsung electronics co., ltd., Seon Joo KIM of Seoul (KR) for samsung electronics co., ltd., Kinam KWON of Suwon-si (KR) for samsung electronics co., ltd., Hyong Euk LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N23/88, G06T7/90, H04N1/60
CPC Code(s): H04N23/88
Abstract: an electronic device includes a processor configured to perform operations including inputting an image into an encoder to generate a feature map including information about an illumination present in the input image, iteratively updating a plurality of slot vectors using the calculated feature map to calculate a plurality of predicted illumination vectors, calculating, using the calculated plurality of predicted illumination vectors, a plurality of mixture maps representing respective effects of a plurality of virtual illuminations on pixels in the input image and a plurality of illumination color vectors representing respective color values of the plurality of virtual illuminations, and generating an illumination map using the calculated plurality of mixture maps and the calculated plurality of illumination color vectors.
20240292120. IMAGE SENSOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Keunjoo PARK of Suwon-si (KR) for samsung electronics co., ltd., Junseok KIM of Suwon-si (KR) for samsung electronics co., ltd., Bongki SON of Suwon-si (KR) for samsung electronics co., ltd., Jaeha PARK of Suwon-si (KR) for samsung electronics co., ltd., Inchun LIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/47, H04N25/587, H04N25/707
CPC Code(s): H04N25/47
Abstract: provided is an image sensor. the image sensor including a plurality of pixels, and processing circuitry configured to, generate first image data by converting optical signals received by each of the plurality of pixels during a first exposure time into electrical signals, generate event data including information related to a change in intensity of the optical signals received by each of the plurality of pixels during the first exposure time, the event data having a frame rate greater than a frame rate of the first image data, receive the first image data and the event data, and generate output data by sequentially packing the first image data and the event data corresponding to the first exposure time.
20240292128. IMAGE SENSOR_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Yong Suk CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/75, H04N25/709, H04N25/772
CPC Code(s): H04N25/75
Abstract: an image sensor comprises a row driver, a first row line which is connected to the row driver, first to fourth pixels connected to the first row line, first to fourth column lines connected to the first to fourth pixels and configured to receive respective first to fourth output signals from the first to fourth pixels, a boosting circuit connected to the first to fourth column lines, a second row line connected to the boosting circuit, first and second boosting drivers connected, respectively, to first and second terminals of the second row line. the boosting circuit may adjust voltage of the first and second output signals based on a first boosting enable signal received from the first boosting driver and may adjust a voltage of the third and fourth output signals based on a second boosting enable signal received from the second boosting driver.
Inventor(s): Hyeokjong LEE of Suwon-si (KR) for samsung electronics co., ltd., Yunjung KIM of Suwon-si (KR) for samsung electronics co., ltd., Sungwook JUN of Suwon-si (KR) for samsung electronics co., ltd., Yeongseok CHOI of Suwon-si (KR) for samsung electronics co., ltd., Minho KWON of Suwon-si (KR) for samsung electronics co., ltd., Mooyoung KIM of Suwon-si (KR) for samsung electronics co., ltd., Yunhong KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/772, H04N25/60, H04N25/709, H04N25/76, H04N25/79
CPC Code(s): H04N25/772
Abstract: an image sensor includes a first chip including a pixel array including a plurality of pixels, and a second chip including a peripheral circuit configured to drive the pixel array and process a pixel signal output from the pixel array, where the first chip and the second chip are stacked, the peripheral circuit is implemented with a plurality of field effect transistors (fets), and at least one channel structure of each of the plurality of fets all extend in a same direction.
Inventor(s): HYEOKJONG LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04N25/78
CPC Code(s): H04N25/78
Abstract: disclosed is a counter which generates a binary code and a digital signal the counter includes: a reset memory circuit configured to store a sum of n reset binary codes, each of the n reset binary codes corresponding to a result of comparing a reset signal of the pixel signal with the ramp signal, and to calculate one of the n reset binary codes by performing a shifting operation on the sum of the n reset binary codes; and an output memory circuit configured to output the digital signal based on the n reset binary codes, a first image binary code indicating a result of comparing a first image signal of the pixel signal with the ramp signal once, and n sum binary codes, the n sum binary codes respectively indicating n results of comparing a sum signal of the pixel signal with the ramp signal.
Inventor(s): Jeongho YEO of Suwon-si (KR) for samsung electronics co., ltd., Seho MYUNG of Suwon-si (KR) for samsung electronics co., ltd., Youngbum KIM of Suwon-si (KR) for samsung electronics co., ltd., Sungjin PARK of Suwon-si (KR) for samsung electronics co., ltd., Hyunseok RYU of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W4/06, H04L12/18, H04L47/70, H04L47/78, H04W72/0453
CPC Code(s): H04W4/06
Abstract: the disclosure relates to converging a 5th-generation (5g) communication system for supporting higher data rates beyond a 4th-generation (4g) system with a technology for internet of things (iot), and may be applied to intelligent services based on the 5g communication technology and iot-related technology. to do so, a method and apparatus are provided for transmitting groupcast/broadcast/multicast data and control information in the downlink and uplink. the method and apparatus include features for transmitting to a user equipment (ue), configuration information for multicast and broadcast services (mbs), encoding a first bit sequence for the mbs based on a channel coding, identifying a transport block size (tbs) for limited buffer rate matching (lbrm) based on the configuration information, performing the lbrm to the encoded first bit sequence based on the identified tbs, and transmitting to the ue, a second bit sequence identified based on the lbrm.
Inventor(s): Rajavelsamy RAJADURAI of Bangalore (IN) for samsung electronics co., ltd., Nivedya Parambath SASI of Bangalore (IN) for samsung electronics co., ltd., Rohini RAJENDRAN of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04W12/0433, H04L5/00, H04W12/06, H04W12/106
CPC Code(s): H04W12/0433
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. embodiments herein provide a system and method for key refresh in authentication and key management for applications (akma). the proposed method is to support krefresh by requesting the refreshing parameters from the network once the kis about to expire. further, the proposed method is to support krefresh by requesting the refreshing parameters from the network once the kis about to expire. further, the proposed method is used to support a mechanism to address the key synchronisation issue at a user equipment (ue) side, an application function (af) side and at an aanf using a key index included as a part of akma key identifier (a-kid). further the proposed method uses certain mechanisms to provide the refresh parameter to the ausf, the aanf and the ue as a part of akma refresh procedure or as a part of upu procedure. further, the proposed method supports akma key refresh with limited impacts on akma services in 5g system.
Inventor(s): Mahmoud WATFA of Staines (GB) for samsung electronics co., ltd., Ricky Kumar KAURA of Staines (GB) for samsung electronics co., ltd.
IPC Code(s): H04W12/06, H04W84/04
CPC Code(s): H04W12/06
Abstract: there is disclosed a method for a user equipment (ue) in a wireless communication system, receiving pending network slice selection assistance information (nssai) including one or more single nssais (s-nssais), and applying the received pending nssai to at least one second public land mobile network (plmn) in a registration area, wherein the ue is assigned to the registration area comprising two or more tracking areas (tas) including at least a first set of tas belonging to a first public land mobile network (plmn) to which the ue is registered.
Inventor(s): Jajohn Mathew MATTAM of Bangalore (IN) for samsung electronics co., ltd., Vinay Kumar SHRIVASTAVA of Bangalore (IN) for samsung electronics co., ltd., Fasil Abdul LATHEEF of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04W24/02, H04L5/00, H04W72/30, H04W74/0833, H04W76/19, H04W76/25, H04W76/28, H04W76/30
CPC Code(s): H04W24/02
Abstract: the present disclosure relates to a communication method and system for converging a 5th-generation (5g) communication system for supporting higher data rates beyond a 4th-generation (4g) system with a technology for internet of things (iot). the present disclosure may be applied to intelligent services based on the 5g communication technology and the iot-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. the disclosure provides a method for enabling user equipment (ue) actions upon secondary cell group (scg) deactivation is provided.
Inventor(s): Anil AGIWAL of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W24/04, H04W72/232, H04W76/28
CPC Code(s): H04W24/04
Abstract: a method performed by a user equipment (ue) in a wireless communication system is provided. the method includes receiving downlink control information (dci) including information that indicates skipping physical downlink control channel (pdcch) monitoring for a first duration; detecting a beam failure; triggering a beam failure recovery; and monitoring a pdcch associated with the beam failure recovery during a second duration within the first duration.
Inventor(s): Kwonjong LEE of Suwon-si (KR) for samsung electronics co., ltd., Sundo KIM of Suwon-si (KR) for samsung electronics co., ltd., Sangwon JUNG of Suwon-si (KR) for samsung electronics co., ltd., Jungsoo JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W24/10, H04B17/318, H04B17/336
CPC Code(s): H04W24/10
Abstract: the disclosure relates to a 5generation (5g) communication system or a 6generation (6g) communication system for supporting higher data rates beyond a 4generation (4g) communication system such as long term evolution (lte). a method performed by a base station in a wireless communication system is provided. the method includes identifying a first terminal for measuring a cross-link interference (cli)-reference signal (rs) and a plurality of terminals for transmitting cli-rss, determining a plurality of groups including at least one cli-rs resource, transmitting, to the first terminal, information on the determined plurality of groups, transmitting, to a second terminal among the plurality of terminals, configuration information on a group of cli-rs resources corresponding to the second terminal, and receiving, from the first terminal, a cli measurement result which is measured based on the configuration information on the group of the cli-rs resources.
Inventor(s): Hyunkee MIN of Suwon-si (KR) for samsung electronics co., ltd., Ashish GUPTA of Suwon-si (KR) for samsung electronics co., ltd., Taeyong KIM of Suwon-si (KR) for samsung electronics co., ltd., Yeji YOON of Suwon-si (KR) for samsung electronics co., ltd., Junghun LEE of Suwon-si (KR) for samsung electronics co., ltd., Junyeop JUNG of Suwon-si (KR) for samsung electronics co., ltd., Seongsu CHOI of Suwon-si (KR) for samsung electronics co., ltd., Junsu CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W28/08, H04W28/02
CPC Code(s): H04W28/0942
Abstract: an electronic device and a method performed by the electronic device are provided. the method includes receiving a management frame for each of one or more links transmitted by at least one hub device, determining a predicted downlink (dl) throughput and a predicted uplink (ul) throughput for each of the links based on the management frame, determining a target link based on the determined predicted dl throughput and the predicted ul throughput for each of the links, and exchanging data with an external electronic device through the target link.
Inventor(s): Nishant . of Bangalore (IN) for samsung electronics co., ltd., Siddharth SHUKLA of Bangalore (IN) for samsung electronics co., ltd., Amit Anandrao DANGE of Bangalore (IN) for samsung electronics co., ltd., Vivek MURUGAIYAN of Bangalore (IN) for samsung electronics co., ltd., Kailash Kumar JHA of Bangalore (IN) for samsung electronics co., ltd., Mohammad UMAIR of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04W36/08, H04W36/00, H04W36/36
CPC Code(s): H04W36/083
Abstract: a method for selecting a non-terrestrial network (ntn) cell by a user equipment (ue) is provided. the method includes receiving one or more system parameters from a serving ntn cell and a plurality of ntn neighbor cells, determining trajectory information associated with the plurality of ntn neighbor cells based on the one or more received system parameters, and selecting the ntn cell among the plurality of ntn neighbor cells to perform at least one of a cell reselection and a conditional hand over (cho) based on the determined trajectory information associated with the plurality of ntn neighbor cells.
Inventor(s): Lixiang XU of Beijing (CN) for samsung electronics co., ltd., Weiwei WANG of Beijing (CN) for samsung electronics co., ltd., Hong WANG of Beijing (CN) for samsung electronics co., ltd.
IPC Code(s): H04W36/30, H04W36/00, H04W76/20
CPC Code(s): H04W36/305
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. the present disclosure provides a method and an apparatus supporting self-configuration and self-optimization.
Inventor(s): June HWANG of Suwon-si (KR) for samsung electronics co., ltd., Sangyeob JUNG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W36/36, H04W52/02, H04W72/232, H04W76/20
CPC Code(s): H04W36/362
Abstract: the present disclosure relates to 5g or 6g communication systems to support higher data transmission rates. the present disclosure a method and apparatus of a ue. the method of the ue comprises: receiving, from a base station, a radio resource control (rrc) message including configuration information associated with a conditional handover (cho); determining, based on the configuration information, whether an event is satisfied; and performing the cho based on a determination that the event is satisfied.
Inventor(s): Arunprasath RAMAMOORTHY of Bangalore (IN) for samsung electronics co., ltd., Basavaraj Jayawant PATTAN of Bangalore (IN) for samsung electronics co., ltd., Kiran Gurudev KAPALE of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04W64/00, H04L65/1016, H04L65/1033, H04L65/611
CPC Code(s): H04W64/003
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate.
Inventor(s): Arunprasath RAMAMOORTHY of Bangalore (IN) for samsung electronics co., ltd., Basavaraj Jayawant PATTAN of Bangalore (IN) for samsung electronics co., ltd., Kiran Gurudev KAPALE of Bangalore (IN) for samsung electronics co., ltd.
IPC Code(s): H04W64/00, H04L65/1016, H04L65/1033, H04L65/611
CPC Code(s): H04W64/003
Abstract: embodiments herein disclose methods for location management in a wireless network by a mc client. the method includes receiving, by a mc client, at least one of a location reporting configuration request and a location information request from a location management server (lms). further, the method includes sending, by the mc client mc client, at least one of a mc gateway location reporting configuration request to a mc gateway ue based on the location reporting configuration request for an event triggered location reporting and a mc gateway location information request for an on-demand location to request a 3gpp access network related location information based on the location information request. further, the method includes receiving a mc gateway location information report comprising location information requested by the mc client.
Inventor(s): Rubayet Shafin of Allen TX (US) for samsung electronics co., ltd., Boon Loong Ng of Plano TX (US) for samsung electronics co., ltd., Vishnu Vardhan Ratnam of Plano TX (US) for samsung electronics co., ltd., Peshal Nayak of Plano TX (US) for samsung electronics co., ltd., Yue Qi of Plano TX (US) for samsung electronics co., ltd.
IPC Code(s): H04W72/40, H04W72/02
CPC Code(s): H04W72/40
Abstract: a wireless communication network includes an access point (ap) device and a non-ap device. the ap device may advertise a frame indicating a recommended channel for peer-to-peer communication. the non-ap device may perform peer-to-peer communication with one or more other non-ap devices using the recommended channel. the frame may be a beacon frame or a probe response frame.
Inventor(s): Sungryeul RHYU of Suwon-si (KR) for samsung electronics co., ltd., Eric YIP of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W74/0808, H04W74/04, H04W74/08
CPC Code(s): H04W74/0808
Abstract: the disclosure relates to a fifth generation (5g) or sixth generation (6g) communication system for supporting a higher data transmission rate. a method by a first user equipment (ue) managing communication delay in a communication system is provided. the method includes receiving, from a server, scheduling information for generating communication delay information upon transmitting media to a second ue, measuring a communication delay with the first ue and the second ue based on the scheduling information, generating the communication delay information based on the measured communication delay, and transmitting, to the server, the communication delay information.
Inventor(s): Qi XIONG of Beijing (CN) for samsung electronics co., ltd., Feifei SUN of Beijing (CN) for samsung electronics co., ltd., Yi WANG of Beijing (CN) for samsung electronics co., ltd., Bin YU of Beijing (CN) for samsung electronics co., ltd.
IPC Code(s): H04W74/0833, H04L5/00
CPC Code(s): H04W74/0833
Abstract: the present disclosure relates to a communication method and system for converging a 5-generation (5g) communication system for supporting higher data rates beyond a 4-generation (4g) system with a technology for internet of things (iot). the present disclosure may be applied to intelligent services based on the 5g communication technology and the iot-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. a method for 2-step ra (2-step random access) performed by a terminal (ue) is provided. the method comprises receiving, from a base station, first random access channel (rach) configuration for 4-step ra (4-step random access), second rach configuration for the 2-step ra, and physical uplink shared channel (pusch) configuration, the first rach configuration including information on ra occasions for the 4-step ra; in case that an index indicating a subset of the ra occasions is included in the second rach configuration, identifying at least one ra occasion for the 2-step ra based on the subset; identifying at least one pusch resource based on the pusch configuration and the at least one ra occasion; and transmitting, to the base station, a random access preamble in the at least one ra occasion and a pusch in the at least one pusch resource.
Inventor(s): Sangkyu BAEK of Suwon-si (KR) for samsung electronics co., ltd., Soenghun KIM of Suwon-si (KR) for samsung electronics co., ltd., Jaehyuk JANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W74/0833, H04L1/1812, H04W72/1268, H04W72/23
CPC Code(s): H04W74/0833
Abstract: the present disclosure relates to a communication method and system for converging a 5th-generation (5g) communication system for supporting higher data rates beyond a 4th-generation (4g) system with a technology for internet of things (iot). the present disclosure may be applied to intelligent services based on the 5g communication technology and the iot-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. the method includes identifying whether a medium access control (mac) entity of the terminal is configured with a logical channel (lch)-based prioritization, identifying whether a first uplink grant is associated with a random access, determining the first uplink grant to be a prioritized uplink grant, and transmitting an uplink signal based on the prioritized uplink grant.
Inventor(s): Youngkyo BAEK of Suwon-si (KR) for samsung electronics co., ltd., Kyungjoo SUH of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W76/40, H04W76/11
CPC Code(s): H04W76/40
Abstract: the present disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. a method for processing a multicast-broadcast service (mbs) session of a session management function (smf) in a wireless communication system, according to one embodiment of the present disclosure, comprises the steps of: receiving, from an access and mobility management function (amf), a first message requesting the update of a packet data unit (pdu) session related to the mbs session, if a terminal decides to leave the mbs session; and transmitting, to the amf, a second message, which is a response to the update of the pdu session, in response to the first message.
Inventor(s): Hyoungmin Seo of Suwon-si (KR) for samsung electronics co., ltd., Laehoon Kim of Suwon-si (KR) for samsung electronics co., ltd., Sanghwan Park of Suwon-si (KR) for samsung electronics co., ltd., Satish Kumar Reddy Palli of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H04W76/45, H04W4/10, H04W88/04
CPC Code(s): H04W76/45
Abstract: the present disclosure relates to electronic devices that provide walkie-talkie service. one example electronic device includes a communication chip including a bluetooth circuit for supporting bluetooth communication, and a processor including a walkie-talkie circuit for performing a walkie-talkie operation with a walkie-talkie group, including a plurality of bluetooth devices, by using the bluetooth circuit. the walkie-talkie circuit includes a walkie-talkie control circuit configured to generate setting information related to the walkie-talkie operation, and a walkie-talkie processing circuit configured to set values of parameters of a plurality of operations for the walkie-talkie operation based on the setting information, and generate second walkie-talkie data by processing first walkie-talkie data received from the walkie-talkie group through the plurality of operations.
Inventor(s): Myoungkoo CHOI of Suwon-si (KR) for samsung electronics co., ltd., Minhoon LEE of Suwon-si (KR) for samsung electronics co., ltd., Gyonyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Byungkwan KIM of Suwon-si (KR) for samsung electronics co., ltd., Jungjin KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H05B47/185, H01L27/12
CPC Code(s): H05B47/185
Abstract: provided is a display apparatus including a substrate, a plurality of light emitting devices arranged in a two-dimensional (2d) matrix on the substrate, a power supply comprising a plurality of power lines configured to provide power to the plurality of light emitting devices, and a controller configured to control the power supply to turn on and off each power line of the plurality of power lines a plurality of times in one frame.
Inventor(s): Bongkyu MIN of Suwon-si (KR) for samsung electronics co., ltd., Taewoo KIM of Suwon-si (KR) for samsung electronics co., ltd., Jinyong PARK of Suwon-si (KR) for samsung electronics co., ltd., Hyelim YUN of Suwon-si (KR) for samsung electronics co., ltd., Hyeongju LEE of Suwon-si (KR) for samsung electronics co., ltd., Jiseon HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H05K7/20, H05K1/18
CPC Code(s): H05K7/20454
Abstract: an electronic device is provided. the electronic device includes a base plate, a first component disposed on the base plate, a second component which is disposed on the base plate and provided at a position spaced apart from the first component, an interposer which is connected to the base plate and surrounds the first component and the second component, a cover plate including a cover plate body which is connected to the interposer and covers the first component and the second component, and a cover hole which is formed to penetrate the cover plate body, and a heat dissipation plate including a heat dissipation plate body which is disposed on the cover plate body and faces the first component and the second component, a heat dissipation hole which is formed to penetrate the heat dissipation plate body and communicates with the cover hole, and a flow guide which is formed on the heat dissipation plate body and guides the flow of a thermal interface material.
Inventor(s): Hyunjun KIM of Suwon-si (KR) for samsung electronics co., ltd., Jihoon PARK of Suwon-si (KR) for samsung electronics co., ltd., Yonghoon YEO of Suwon-si (KR) for samsung electronics co., ltd., Seulki JEONG of Suwon-si (KR) for samsung electronics co., ltd., Dooyoung KIM of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H05K9/00, H01L25/075, H01L33/62
CPC Code(s): H05K9/0079
Abstract: a display module including a substrate including a plurality of first electrode pads at a rear surface; a plurality of light emitting diode packages including a plurality of second electrode pads on which a plurality of light emitting diodes are provided at a front surface of the substrate, where the plurality of second electrode pads are configured to electrically connect to the plurality of first electrode pads; and a first electrostatic discharge (esd) protection wiring provided discontinuously along a first side of the substrate at the front surface of the substrate.
Inventor(s): SangHyun LEE of Suwon-si (KR) for samsung electronics co., ltd., Kiseok LEE of Suwon-si (KR) for samsung electronics co., ltd., Seokhan PARK of Suwon-si (KR) for samsung electronics co., ltd., Sung-Min PARK of Suwon-si (KR) for samsung electronics co., ltd., Iljae SHIN of Suwon-si (KR) for samsung electronics co., ltd., Dongjun LEE of Suwon-si (KR) for samsung electronics co., ltd., Jinwoo HAN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/30
Abstract: a semiconductor memory device includes a semiconductor substrate; a stack structure that includes word lines and interlayer dielectric patterns that are alternately stacked on the semiconductor substrate; an etch stop layer on the stack structure; semiconductor patterns that penetrate the word lines; a bit line in contact with the semiconductor patterns; capping dielectric patterns between the bit line and the word lines, the capping dielectric patterns covering sidewalls of the word lines; and a data storage element on the semiconductor substrate, wherein a level of a bottom surface of the etch stop layer is the same as a level of a top surface of the data storage element.
Inventor(s): Intak Jeon of Suwon-si (KR) for samsung electronics co., ltd., Jungmin Park of Suwon-si (KR) for samsung electronics co., ltd., Hanjin Lim of Suwon-si (KR) for samsung electronics co., ltd., Hyungsuk Jung of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/315
Abstract: a semiconductor device includes a lower structure, a capacitor on the lower structure, the capacitor including a first bottom electrode, which is extended in a direction perpendicular to a bottom surface of the lower structure, and a second bottom electrode, which is provided on the first bottom electrode, a bottom supporting pattern supporting the first bottom electrode, and a top supporting pattern provided on the bottom supporting pattern to support the first bottom electrode. the first bottom electrode includes a first material, and the second bottom electrode may include a second material. a work function of the second material is greater than a work function of the first material.
Inventor(s): Junghwan HUH of Suwon-si (KR) for samsung electronics co., ltd., Daehyun KIM of Suwon-si (KR) for samsung electronics co., ltd., Yeajin NA of Suwon-si (KR) for samsung electronics co., ltd., Junsik YU of Suwon-si (KR) for samsung electronics co., ltd., Taekyung YOON of Suwon-si (KR) for samsung electronics co., ltd., Yoojin JEONG of Suwon-si (KR) for samsung electronics co., ltd., Yongjun CHOI of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/315
Abstract: described is a semiconductor device comprising an active pattern, an additional active layer on the active pattern, and a gate structure that runs across the active pattern. the additional active layer includes a bottom surface connected to a sidewall of the active pattern and an upper curved surface at a level higher than a level of the bottom surface. a lattice contact of the additional active layer is different from that of the active pattern.
20240292598. SEMICONDUCTOR MEMORY DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Suncheul KIM of Suwon-si (KR) for samsung electronics co., ltd., Taeyeon KWON of Suwon-si (KR) for samsung electronics co., ltd., Younjae CHO of Suwon-si (KR) for samsung electronics co., ltd., Jihoon KIM of Suwon-si (KR) for samsung electronics co., ltd., Hongsung MOON of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/34
Abstract: a semiconductor memory device may include active regions defined on a substrate by a device isolation layer, each of the active regions including a first impurity region and a second impurity region, word lines on the active regions and extended in a first direction, capping insulating patterns covering top surfaces of the word lines, respectively, bit lines on the word lines and extended in a second direction crossing the first direction, contact plugs between the bit lines and connected to the second impurity region, and data storages on the contact plugs, respectively. each of the word lines may include a first metal nitride layer and a second metal nitride layer on the first metal nitride layer. a resistivity of the second metal nitride layer may be smaller than a resistivity of the first metal nitride layer.
20240292600. MEMORY DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Min Tae RYU of Suwon-si (KR) for samsung electronics co., ltd., Byong-Deok CHOI of Seoul (KR) for samsung electronics co., ltd., Sungwon YOO of Suwon-si (KR) for samsung electronics co., ltd., Wonsok LEE of Suwon-si (KR) for samsung electronics co., ltd., Yongsang YOO of Seoul (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00, G11C11/4091, G11C11/4094, G11C11/4097
CPC Code(s): H10B12/482
Abstract: a memory device includes a first memory cell connected to a first bitline and a second memory cell connected to a second bitline, wherein the first memory cell may include a first access transistor including one end connected to the first bitline, and a first capacitor including one electrode connected to another end of the first access transistor and another electrode connected to the second bitline, and the first access transistor may include an oxide semiconductor.
Inventor(s): HONGJUN LEE of Suwon-si (KR) for samsung electronics co., ltd., Keunnam Kim of Suwon-si (KR) for samsung electronics co., ltd., Kiseok Lee of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/482
Abstract: a semiconductor device includes a substrate including an active region, a word line and a bit line that overlap the active region while crossing the active region, a bit line capping layer that is disposed on the bit line, a direct contact that connects the active region and the bit line, and a buried contact that is connected to the active region. opposite sides of the bit line capping layer have asymmetric shapes.
20240292602. SEMICONDUCTOR MEMORY DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Sang Ho Lee of Suwon-si (KR) for samsung electronics co., ltd., Moon Young Jeong of Suwon-si (KR) for samsung electronics co., ltd., Dong Soo Woo of Suwon-si (KR) for samsung electronics co., ltd., Yoon Gi Hong of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/482
Abstract: a semiconductor memory device includes a bit line extended in a first direction on a substrate, a first word line extended in a second direction on the bit line, a second word line extended in the second direction on the bit line and spaced apart from the first word line in the first direction, a back gate electrode between the first word line and the second word line and extended in the second direction, a first active pattern between the first word line and the back gate electrode on the bit line, and a second active pattern between the first word line and the back gate electrode on the bit.
20240292604. SEMICONDUCTOR DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jiseong KIM of Suwon-si (KR) for samsung electronics co., ltd., JUNSOO KIM of Suwon-si (KR) for samsung electronics co., ltd., DAEHYUN MOON of Suwon-si (KR) for samsung electronics co., ltd., SUNGHO JANG of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00
CPC Code(s): H10B12/488
Abstract: a semiconductor device includes a substrate including cell regions, active patterns adjacent to each other in first and second directions that are parallel to a lower surface of the substrate and intersect each other on the cell regions, a shield pattern surrounding side surfaces of the active patterns, a first isolation pattern surrounding the active patterns between the active patterns and the shield pattern, second isolation patterns between adjacent active patterns in the first direction, and word lines crossing the active patterns and the shield pattern in the second direction.
20240292608. SEMICONDUCTOR MEMORY DEVICE_simplified_abstract_(samsung electronics co., ltd.)
Inventor(s): Jae Hong PARK of Hwaseong-si (KR) for samsung electronics co., ltd., Jae-Wha PARK of Yongin-si (KR) for samsung electronics co., ltd., Moon Keun KIM of Hwaseong-si (KR) for samsung electronics co., ltd., Jung Ha HWANG of Gunpo-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B12/00, G11C5/06
CPC Code(s): H10B12/50
Abstract: a semiconductor memory device may include at least one semiconductor pattern including a horizontal portion extending in a second direction parallel to a top surface of a semiconductor substrate and a vertical portion extending in the first direction, at least one gate electrode on the horizontal portion of the at least one semiconductor pattern and extending in a third direction different from the first direction and the second direction, and at least one information storage element connected to the vertical portion of the at least one semiconductor pattern, wherein a thickness of the horizontal portion of the at least one semiconductor pattern in the first direction is smaller than a thickness of the vertical portion of the at least one semiconductor pattern in the first direction.
Inventor(s): Kohji Kanamori of Suwon-Si (KR) for samsung electronics co., ltd., Jeehoon Han of Suwon-Si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B43/20, H01L29/04, H01L29/06
CPC Code(s): H10B43/20
Abstract: a three-dimensional nonvolatile memory device includes: a plurality of insulating layers stacked on a substrate in a vertical direction substantially perpendicular to a surface of the substrate; a plurality of channel layers positioned between the plurality of insulating layers, and elongated in a first horizontal direction that is parallel to the surface of the substrate, wherein the plurality of channel layers includes a first metal element; a diffusion stop layer conformally formed in a trench passing through the plurality of insulating layers and the plurality of channel layers in the vertical direction; and a crystalline semiconductor pattern between each of the plurality of channel layers and the diffusion stop layer, wherein the crystalline semiconductor pattern includes a second metal element, wherein a concentration of the second metal element in the crystalline semiconductor pattern is higher than a concentration of the first metal element in the plurality of channel layers.
Inventor(s): Myunghun LEE of Suwon-si (KR) for samsung electronics co., ltd., Homoon SHIN of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10B80/00, H01L23/00, H01L25/00, H01L25/065, H01L25/18
CPC Code(s): H10B80/00
Abstract: a memory device may include a first structure and a second structure bonded to the first structure. the first structure may have a plurality of planes and a pad part between two planes adjacent to each other among the plurality of planes. each of the plurality of planes may include a memory cell. the second structure may include a peripheral circuit. the plurality of planes may be minimum units in which operations are independently performed and may be in an n�m array (n and m being integers of 2 or larger). the pad part may be between the rows and/or between the columns of the n�m array.
Inventor(s): Yunki LEE of Suwon-si (KR) for samsung electronics co., ltd., Soongju OH of Seoul (KR) for samsung electronics co., ltd., Byungku JUNG of Seoul (KR) for samsung electronics co., ltd., Hyeyeon PARK of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K39/32
CPC Code(s): H10K39/32
Abstract: an image sensor including a semiconductor substrate including a first surface and a second surface opposite to the first surface, an anti-reflection layer on the first surface of the semiconductor substrate, and a photoelectric converter configured to absorb incident light incident through the semiconductor substrate and photoelectrically convert the incident light. the semiconductor substrate includes a refraction pattern on the first surface of the semiconductor substrate and configured to refract the incident light.
Inventor(s): Myeongeon KIM of Suwon-si (KR) for samsung electronics co., ltd., Bumsuk KIM of Suwon-si (KR) for samsung electronics co., ltd., Jungchak AHN of Suwon-si (KR) for samsung electronics co., ltd., Kyungho LEE of Suwon-si (KR) for samsung electronics co., ltd.
IPC Code(s): H10K59/65, H01L23/00, H01L25/18, H10K59/131, H10K59/95
CPC Code(s): H10K59/65
Abstract: provided is a semiconductor device for video transmission display including a display unit including a plurality of light emitting elements constituting a plurality of unit display pixels, an image sensor unit disposed on the display unit so that the plurality of unit image sensor pixels corresponding to the same color and the plurality of unit display pixels overlap each other at least partially in a vertical direction, and a plurality of connection paths each including at least one through electrode and electrically connecting the plurality of unit image sensor pixels corresponding to the same color to the plurality of unit display pixels.
SAMSUNG ELECTRONICS CO., LTD. patent applications on August 29th, 2024
- SAMSUNG ELECTRONICS CO., LTD.
- A61B5/0537
- CPC A61B5/0537
- Samsung electronics co., ltd.
- A61F2/70
- A61B5/11
- A61H3/00
- A63B21/00
- A63B23/04
- A63B24/00
- CPC A61F2/70
- B03C3/08
- B03C3/38
- B03C3/47
- B03C3/82
- F24F8/192
- CPC B03C3/08
- B25J9/16
- G06T7/70
- G06V10/44
- G06V10/74
- CPC B25J9/1664
- B65B51/10
- B65B5/02
- B65B5/04
- B65B61/06
- B65B67/12
- CPC B65B51/10
- B65D1/36
- B65D85/38
- CPC B65D1/36
- C23C14/06
- C23C14/34
- C23C14/50
- C23C16/27
- C23C16/44
- H01L21/02
- H01L21/67
- H01L21/683
- CPC C23C14/0611
- F24F8/80
- F24F3/14
- F24F8/108
- F24F8/167
- F24F8/22
- F24F13/28
- CPC F24F8/80
- F28F9/02
- F28D7/16
- CPC F28F9/0246
- G01B11/02
- CPC G01B11/02
- G02B1/00
- G02B27/01
- CPC G02B1/002
- G02B3/00
- G02B1/115
- H04N23/60
- H04N25/11
- CPC G02B3/0006
- G02F1/1345
- H01L27/12
- CPC G02F1/13452
- G03F7/039
- G03F7/004
- G03F7/038
- H01L21/027
- CPC G03F7/039
- G03F7/00
- C11D7/08
- C11D7/10
- C11D7/26
- G03F1/22
- CPC G03F7/70925
- G04G19/00
- A61B5/00
- A61B5/024
- G04G9/00
- G04G21/02
- H02J7/00
- H02J50/00
- H02J50/10
- H05K1/02
- H05K5/00
- CPC G04G19/00
- G04G17/08
- G06F1/16
- CPC G04G21/025
- G05D1/622
- B25J5/00
- B25J11/00
- G05D1/243
- CPC G05D1/622
- G09F9/30
- H04M1/02
- CPC G06F1/1675
- G06F1/26
- G06F1/3215
- G06F1/3228
- G06F1/3296
- CPC G06F1/266
- G06F3/01
- G06T7/60
- G06V40/20
- CPC G06F3/011
- G06F3/06
- G06F11/10
- CPC G06F3/0611
- CPC G06F3/0614
- G06F13/16
- CPC G06F3/0634
- CPC G06F3/065
- CPC G06F3/0659
- CPC G06F3/0689
- G06F11/14
- G06F21/57
- CPC G06F11/1471
- G06F12/02
- CPC G06F12/023
- G06F12/0862
- G06F9/38
- G06F12/06
- CPC G06F12/0862
- G06F13/42
- CPC G06F13/1668
- G06F21/56
- G06N3/04
- CPC G06F21/566
- G06F21/62
- G10L15/02
- G10L15/06
- G10L15/16
- G10L15/22
- G10L15/30
- G10L21/007
- G10L21/0208
- CPC G06F21/6254
- G06N5/04
- CPC G06N5/04
- G06T11/00
- G06T7/90
- G06T15/20
- G06T17/10
- CPC G06T11/001
- G06T11/60
- G06T5/50
- G06T7/194
- G06T11/40
- G06V10/26
- CPC G06T11/60
- G06V40/13
- CPC G06V40/13
- G09G3/00
- G06F40/174
- CPC G09G3/035
- G09G3/34
- CPC G09G3/3426
- G10L15/18
- G06F16/632
- CPC G10L15/1815
- G11C11/4074
- CPC G11C11/4074
- G11C11/4076
- G06F1/08
- G06F1/12
- H03K5/13
- H03K5/156
- CPC G11C11/4076
- G11C11/4096
- G11C11/4093
- CPC G11C11/4096
- G11C16/34
- G11C16/08
- G11C16/30
- CPC G11C16/3427
- G11C16/04
- CPC G11C16/345
- G11C29/08
- CPC G11C29/08
- G11C29/44
- G11C29/12
- G11C29/24
- CPC G11C29/44
- H01J37/08
- H01J37/317
- CPC H01J37/08
- H01L21/308
- H01L21/311
- H10B12/00
- CPC H01L21/3086
- A46B13/00
- A46B13/02
- CPC H01L21/67046
- H01L21/78
- CPC H01L21/78
- H01L21/66
- H01L23/00
- H01L25/065
- H10B80/00
- CPC H01L22/32
- H01L23/31
- H01L21/56
- H01L21/768
- H01L23/532
- CPC H01L23/3157
- H01L23/48
- H01L29/06
- H01L29/423
- H01L29/66
- H01L29/775
- H01L29/786
- CPC H01L23/481
- H01L29/417
- H01L27/092
- H01L29/78
- H01L23/498
- H01L23/538
- H01L25/10
- CPC H01L23/49822
- H01L23/528
- H01L23/36
- H01L23/522
- CPC H01L23/5286
- CPC H01L24/06
- CPC H01L24/08
- H01L23/13
- H01L23/29
- H01L25/16
- CPC H01L25/0652
- H01L25/18
- H01L25/00
- CPC H01L25/0657
- CPC H01L25/105
- H01L27/02
- G06F30/392
- G06F30/398
- H01L23/544
- CPC H01L27/0207
- H01L27/118
- CPC H01L27/11807
- H01L27/146
- CPC H01L27/1463
- CPC H01L27/14636
- C23C16/455
- CPC H01L28/55
- CPC H01L29/0649
- H01L27/06
- H01L29/08
- H01L29/861
- CPC H01L29/0653
- H01L29/41
- CPC H01L29/41
- H01L29/40
- CPC H01L29/41766
- CPC H01L29/41775
- H01L21/8234
- H01L27/088
- CPC H01L29/66545
- CPC H01L29/6656
- H01L29/15
- H01L29/16
- H01L29/20
- H01L29/22
- H01L29/267
- CPC H01L29/7851
- H01L29/24
- H01L29/49
- CPC H01L29/78696
- H01L33/46
- H01L33/50
- H01L33/60
- CPC H01L33/46
- H01L25/075
- H01L33/10
- H01L33/48
- CPC H01L33/502
- H01M10/0562
- C01G53/00
- H01M4/38
- H01M4/505
- H01M4/525
- H01M10/0585
- CPC H01M10/0562
- H01Q13/10
- H01Q1/24
- CPC H01Q13/10
- H01M10/42
- CPC H02J7/0025
- H03F3/24
- H01L23/66
- H03F1/56
- H04B1/44
- CPC H03F3/245
- H04B5/00
- CPC H04B5/72
- H03H7/38
- CPC H04B5/77
- H04B7/08
- H04B7/0413
- H04L5/00
- CPC H04B7/0862
- H04B17/309
- H04L25/02
- H04W74/0833
- CPC H04B17/309
- H04B7/0417
- H04B7/06
- CPC H04L5/0035
- CPC H04L5/006
- H04L9/32
- G06V40/16
- CPC H04L9/3231
- G06F21/16
- CPC H04L9/3236
- H04L9/40
- G16Y40/10
- CPC H04L9/40
- H04L41/147
- G06N5/022
- H04L41/16
- CPC H04L41/147
- H05K7/14
- CPC H04M1/0277
- H04N5/74
- G06T7/62
- G06V10/141
- CPC H04N5/74
- H04N9/31
- G06T7/215
- CPC H04N9/3188
- H04N19/186
- H04N19/119
- H04N19/122
- H04N19/176
- H04N19/70
- CPC H04N19/186
- H04N19/44
- H04N19/159
- CPC H04N19/45
- H04N19/577
- H04N19/105
- H04N19/136
- H04N19/182
- H04N19/523
- H04N19/537
- CPC H04N19/577
- H04N23/62
- G06F9/54
- CPC H04N23/62
- H04N23/68
- G06T7/11
- CPC H04N23/683
- H04N23/81
- G06T3/40
- G06T5/20
- G06T5/70
- G06T5/73
- G06T7/00
- G06T7/13
- CPC H04N23/81
- H04N23/88
- H04N1/60
- CPC H04N23/88
- H04N25/47
- H04N25/587
- H04N25/707
- CPC H04N25/47
- H04N25/75
- H04N25/709
- H04N25/772
- CPC H04N25/75
- H04N25/60
- H04N25/76
- H04N25/79
- CPC H04N25/772
- H04N25/78
- CPC H04N25/78
- H04W4/06
- H04L12/18
- H04L47/70
- H04L47/78
- H04W72/0453
- CPC H04W4/06
- H04W12/0433
- H04W12/06
- H04W12/106
- CPC H04W12/0433
- H04W84/04
- CPC H04W12/06
- H04W24/02
- H04W72/30
- H04W76/19
- H04W76/25
- H04W76/28
- H04W76/30
- CPC H04W24/02
- H04W24/04
- H04W72/232
- CPC H04W24/04
- H04W24/10
- H04B17/318
- H04B17/336
- CPC H04W24/10
- H04W28/08
- H04W28/02
- CPC H04W28/0942
- H04W36/08
- H04W36/00
- H04W36/36
- CPC H04W36/083
- H04W36/30
- H04W76/20
- CPC H04W36/305
- H04W52/02
- CPC H04W36/362
- H04W64/00
- H04L65/1016
- H04L65/1033
- H04L65/611
- CPC H04W64/003
- H04W72/40
- H04W72/02
- CPC H04W72/40
- H04W74/0808
- H04W74/04
- H04W74/08
- CPC H04W74/0808
- CPC H04W74/0833
- H04L1/1812
- H04W72/1268
- H04W72/23
- H04W76/40
- H04W76/11
- CPC H04W76/40
- H04W76/45
- H04W4/10
- H04W88/04
- CPC H04W76/45
- H05B47/185
- CPC H05B47/185
- H05K7/20
- H05K1/18
- CPC H05K7/20454
- H05K9/00
- H01L33/62
- CPC H05K9/0079
- CPC H10B12/30
- CPC H10B12/315
- CPC H10B12/34
- G11C11/4091
- G11C11/4094
- G11C11/4097
- CPC H10B12/482
- CPC H10B12/488
- G11C5/06
- CPC H10B12/50
- H10B43/20
- H01L29/04
- CPC H10B43/20
- CPC H10B80/00
- H10K39/32
- CPC H10K39/32
- H10K59/65
- H10K59/131
- H10K59/95
- CPC H10K59/65
