Murata manufacturing co., ltd. (20240322788). ACOUSTIC WAVE DEVICE simplified abstract
Contents
ACOUSTIC WAVE DEVICE
Organization Name
murata manufacturing co., ltd.
Inventor(s)
Chihiro Shoda of Nagaokakyo-shi (JP)
Yasuaki Shin of Nagaokakyo-shi (JP)
Yoshihisa Okano of Nagaokakyo-shi (JP)
Junpei Yasuda of Nagaokakyo-shi (JP)
ACOUSTIC WAVE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240322788 titled 'ACOUSTIC WAVE DEVICE
The patent application describes an acoustic wave device with a package substrate and an acoustic wave element chip.
- The device includes a piezoelectric layer with second and third main surfaces and IDT electrodes on the second main surface.
- The first main surface of the package substrate has first and second sides, with a first edge portion closer to the first side.
- The piezoelectric layer is inclined with respect to the thickness direction, defining a crystal axis along the z-axis.
Potential Applications: - This technology can be used in various acoustic wave devices such as sensors, filters, and resonators.
Problems Solved: - Provides improved performance and efficiency in acoustic wave devices. - Enhances the sensitivity and accuracy of acoustic wave sensors.
Benefits: - Increased precision and reliability in acoustic wave applications. - Improved signal processing capabilities in acoustic devices.
Commercial Applications: - This technology has potential commercial uses in telecommunications, medical devices, and industrial sensors.
Questions about the Technology: 1. How does the inclination of the piezoelectric layer impact the performance of the acoustic wave device? 2. What are the specific advantages of having IDT electrodes on the second main surface of the acoustic wave element chip?
Original Abstract Submitted
an acoustic wave device includes a package substrate including a first main surface, and an acoustic wave element chip on the first main surface and including a piezoelectric layer including second and third main surfaces facing each other, and idt electrodes at the second main surface on a side of the first main surface. the first main surface includes first and second sides facing each other. the second main surface a first edge portion closer to the first side than the second side, and a second edge portion facing the first edge portion. a first inter-outer peripheral edge distance between the first side and the first edge portion is longer than a second inter-outer peripheral edge distance between the second side and the second edge portion. the piezoelectric layer has a z-axis defining a crystal axis and inclined with respect to a thickness direction of the piezoelectric layer.
